SG150494A1 - Chemical-mechanical polishing composition and method for using the same - Google Patents

Chemical-mechanical polishing composition and method for using the same

Info

Publication number
SG150494A1
SG150494A1 SG200900786-5A SG2009007865A SG150494A1 SG 150494 A1 SG150494 A1 SG 150494A1 SG 2009007865 A SG2009007865 A SG 2009007865A SG 150494 A1 SG150494 A1 SG 150494A1
Authority
SG
Singapore
Prior art keywords
polishing composition
chemical
mechanical polishing
alumina
mixtures
Prior art date
Application number
SG200900786-5A
Other languages
English (en)
Inventor
Rege Thesauro Francesco De
Kevin Moeggenborg
Vlasta Brusic
Benjamin Bayer
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG150494A1 publication Critical patent/SG150494A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
SG200900786-5A 2004-03-24 2005-03-14 Chemical-mechanical polishing composition and method for using the same SG150494A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/807,944 US20050211950A1 (en) 2004-03-24 2004-03-24 Chemical-mechanical polishing composition and method for using the same

Publications (1)

Publication Number Publication Date
SG150494A1 true SG150494A1 (en) 2009-03-30

Family

ID=34962673

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200900786-5A SG150494A1 (en) 2004-03-24 2005-03-14 Chemical-mechanical polishing composition and method for using the same

Country Status (11)

Country Link
US (2) US20050211950A1 (zh)
EP (1) EP1730246B1 (zh)
JP (2) JP2007531274A (zh)
KR (1) KR101082154B1 (zh)
CN (1) CN1938392B (zh)
AT (1) ATE540093T1 (zh)
IL (2) IL176669A0 (zh)
MY (1) MY146598A (zh)
SG (1) SG150494A1 (zh)
TW (1) TWI299747B (zh)
WO (1) WO2005100496A2 (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7247567B2 (en) * 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US20060108325A1 (en) * 2004-11-19 2006-05-25 Everson William J Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
US7955519B2 (en) * 2005-09-30 2011-06-07 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
WO2008142093A1 (en) 2007-05-24 2008-11-27 Basf Se Chemical-mechanical polishing composition comprising metal-organic framework materials
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
CN102113096A (zh) * 2008-08-06 2011-06-29 日立化成工业株式会社 化学机械研磨用研磨液以及使用了该研磨液的基板的研磨方法
KR101492969B1 (ko) * 2008-11-14 2015-02-16 일진다이아몬드(주) 고경도 피복 분말 및 그 제조 방법
TWI454562B (zh) * 2009-07-16 2014-10-01 Hitachi Chemical Co Ltd 鈀研磨用ｃｍｐ研磨液以及研磨方法
US9799532B2 (en) * 2010-02-15 2017-10-24 Hitachi Chemical Company, Ltd. CMP polishing solution and polishing method
CN102212334B (zh) * 2011-04-19 2013-06-26 浙江露笑光电有限公司 蓝宝石衬底片粗磨研磨液及其配制方法
CN102699811B (zh) * 2012-05-29 2015-07-29 上海瑞钼特金属新材料有限公司 表面高光洁度的难熔金属合金箔片零件及其制备方法
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US8998677B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US9011207B2 (en) 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US8998678B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US8845394B2 (en) 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US9039488B2 (en) 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US8920667B2 (en) * 2013-01-30 2014-12-30 Cabot Microelectronics Corporation Chemical-mechanical polishing composition containing zirconia and metal oxidizer
CN103254799A (zh) * 2013-05-29 2013-08-21 陈玉祥 一种亲水金刚石悬浮研磨抛光液及其制备方法
US9434859B2 (en) * 2013-09-24 2016-09-06 Cabot Microelectronics Corporation Chemical-mechanical planarization of polymer films
SG11201602877RA (en) 2013-10-18 2016-05-30 Cabot Microelectronics Corp Polishing composition and method for nickel-phosphorous coated memory disks
CN104592935B (zh) * 2015-01-04 2016-04-27 江苏中晶科技有限公司 硬质材料研磨用加速剂
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
US11286403B2 (en) 2018-07-20 2022-03-29 Dongjin Semichem Co., Ltd Chemical mechanical polishing composition, chemical mechanical polishing slurry and method for polishing substrate
EP3894497A4 (en) * 2018-12-10 2022-09-14 CMC Materials, Inc. OXIDIZER-FREE SPURRY FOR CHEMICAL-MECHANICAL POLISHING OF RUTHENIUM
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier
CN111421391A (zh) * 2020-03-09 2020-07-17 大连理工大学 一种单晶金刚石晶片的双面化学机械抛光方法
CN115926748A (zh) * 2022-12-21 2023-04-07 广东红日星实业有限公司 一种研磨液及其制备方法和应用

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01257563A (ja) * 1988-04-08 1989-10-13 Showa Denko Kk アルミニウム磁気ディスク研磨用組成物
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5693239A (en) * 1995-10-10 1997-12-02 Rodel, Inc. Polishing slurries comprising two abrasive components and methods for their use
US6110396A (en) * 1996-11-27 2000-08-29 International Business Machines Corporation Dual-valent rare earth additives to polishing slurries
US20030077221A1 (en) * 2001-10-01 2003-04-24 Shivkumar Chiruvolu Aluminum oxide powders
US6099604A (en) * 1997-08-21 2000-08-08 Micron Technology, Inc. Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto
JPH1180708A (ja) * 1997-09-09 1999-03-26 Fujimi Inkooporeetetsudo:Kk 研磨用組成物
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5972124A (en) 1998-08-31 1999-10-26 Advanced Micro Devices, Inc. Method for cleaning a surface of a dielectric material
JP2000212776A (ja) * 1999-01-18 2000-08-02 Jsr Corp 化学機械研磨用水系分散体
US6443812B1 (en) * 1999-08-24 2002-09-03 Rodel Holdings Inc. Compositions for insulator and metal CMP and methods relating thereto
US20030006396A1 (en) * 1999-12-14 2003-01-09 Hongyu Wang Polishing composition for CMP having abrasive particles
US20020039839A1 (en) * 1999-12-14 2002-04-04 Thomas Terence M. Polishing compositions for noble metals
KR20020070319A (ko) * 1999-12-14 2002-09-05 로델 홀딩스 인코포레이티드 반도체 기판용 연마 조성물
JP2001187876A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
JP2001210640A (ja) 2000-01-27 2001-08-03 Inst Of Physical & Chemical Res 半導体の保護膜の形成方法
JP2001308042A (ja) * 2000-04-26 2001-11-02 Okamoto Machine Tool Works Ltd 基板用研磨剤スラリ−
US6468913B1 (en) * 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
DE10048477B4 (de) 2000-09-29 2008-07-03 Qimonda Ag Verfahren zum chemisch-mechanischen Polieren von Schichten aus Metallen der Platingruppe
US6649523B2 (en) * 2000-09-29 2003-11-18 Nutool, Inc. Method and system to provide material removal and planarization employing a reactive pad
JP4153657B2 (ja) * 2000-11-21 2008-09-24 富士フイルム株式会社 磁気記録媒体
EP1211024A3 (en) * 2000-11-30 2004-01-02 JSR Corporation Polishing method
JP2004526308A (ja) * 2001-01-16 2004-08-26 キャボット マイクロエレクトロニクス コーポレイション シュウ酸アンモニウムを含有する研磨系及び方法
JP2002231666A (ja) * 2001-01-31 2002-08-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6812193B2 (en) * 2001-08-31 2004-11-02 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6884723B2 (en) * 2001-12-21 2005-04-26 Micron Technology, Inc. Methods for planarization of group VIII metal-containing surfaces using complexing agents
US6730592B2 (en) * 2001-12-21 2004-05-04 Micron Technology, Inc. Methods for planarization of metal-containing surfaces using halogens and halide salts
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
KR20040000009A (ko) * 2002-06-19 2004-01-03 주식회사 하이닉스반도체 플라티늄-ｃｍｐ용 용액
US20040029494A1 (en) * 2002-08-09 2004-02-12 Souvik Banerjee Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
WO2005019364A1 (en) * 2003-08-14 2005-03-03 Ekc Technology, Inc. Periodic acid compositions for polishing ruthenium/high k substrates

Also Published As

Publication number Publication date
TWI299747B (en) 2008-08-11
KR20060134996A (ko) 2006-12-28
TW200540240A (en) 2005-12-16
JP2007531274A (ja) 2007-11-01
US8101093B2 (en) 2012-01-24
WO2005100496A3 (en) 2005-12-29
IL219496A (en) 2013-04-30
KR101082154B1 (ko) 2011-11-09
EP1730246B1 (en) 2012-01-04
IL219496A0 (en) 2012-06-28
ATE540093T1 (de) 2012-01-15
JP5781906B2 (ja) 2015-09-24
MY146598A (en) 2012-08-30
US20090152240A1 (en) 2009-06-18
CN1938392A (zh) 2007-03-28
IL176669A0 (en) 2006-10-31
CN1938392B (zh) 2010-09-01
JP2012049570A (ja) 2012-03-08
EP1730246A2 (en) 2006-12-13
WO2005100496A2 (en) 2005-10-27
US20050211950A1 (en) 2005-09-29

Similar Documents

Publication Publication Date Title
SG150494A1 (en) Chemical-mechanical polishing composition and method for using the same
JP2007531274A5 (zh)
TW200513524A (en) Chemical-mechanical polishing composition and method for using the same
TW200714696A (en) High throughput chemical mechanical polishing composition for metal film planarization
FR2874527A1 (fr) Outil abrasif agglomere et procede de rectification utilisant un tel outil
WO2004072199A3 (en) Mixed-abrasive polishing composition and method for using the same
EP1151825A3 (en) A diamond grid cmp pad dresser
ATE242085T1 (de) Niedrige temperaturbindung für schleifwerkzeuge
TW200732460A (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
WO2004076574A3 (en) Cmp composition comprising a sulfonic acid and a method for polishing noble metals
MX2009009844A (es) Articulo abrasivo ligado y metodo de fabricacion.
DE602004027901D1 (de) Belegte metalloxidteilchen für cmp
SG157354A1 (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
MY144187A (en) A cmp composition with a polymer additive for polishing noble metals
SG108491A1 (en) Method for chemical mechanical polishing (cmp) of low-k dielectric materials
MY126250A (en) Rare earth salt/oxidizer-based cmp method
TW200705376A (en) Diamond conditioning of soft chemical mechanical planarization/polishing (CMP) polishing pads
WO2006056698A3 (fr) Bloc refractaire fritte a base de carbure de silicium a liaison nitrure de silicium
MY156687A (en) Cmp compositions and method for suppressing polysilicon removal rates
TW200634137A (en) Metal ion-containing CMP composition and method for using the same
MY150410A (en) Iodate-containing chemical-mechanical polishing compositions and methods
TW200605211A (en) CMP composition for improved oxide removal rate
EP1178179A3 (en) Carbide components for drilling tools
AU2003296130A8 (en) Slurry composition for chemical mechanical polishing, method for planarization of surface of semiconductor element using the same, and method for controlling selection ratio of slurry composition
EP1517972A4 (en) METAL POLISHING COMPOSITION, POLISHING METHOD USING THE SAME, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER USING THE POLISHING METHOD