JP2007531274A - 化学機械研磨組成物及びその使用方法 - Google Patents
化学機械研磨組成物及びその使用方法 Download PDFInfo
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- JP2007531274A JP2007531274A JP2007505001A JP2007505001A JP2007531274A JP 2007531274 A JP2007531274 A JP 2007531274A JP 2007505001 A JP2007505001 A JP 2007505001A JP 2007505001 A JP2007505001 A JP 2007505001A JP 2007531274 A JP2007531274 A JP 2007531274A
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- Prior art keywords
- polishing composition
- alumina
- chemical mechanical
- substrate
- abrasive
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Abstract
Description
Claims (36)
- (a)α−アルミナを含む研磨材、
(b)研磨組成物の総質量に対して、カルシウム、ストロンチウム、バリウム及びこれらの混合物からなる群から選択される少なくとも1種の金属のイオン0.05〜50mmol/kg、及び
(c)水を含む液体キャリア
を含んでなる化学機械研磨組成物。 - 存在する前記金属の前記イオンの量が0.05〜10mmol/kgである、請求項1に記載の化学機械研磨組成物。
- 存在する前記金属の前記イオンの量が0.05〜5mmol/kgである、請求項2に記載の化学機械研磨組成物。
- 前記研磨材がヒュームドアルミナをさらに含む、請求項1に記載の化学機械研磨組成物。
- 前記研磨材がα−アルミナを10質量%以上含む、請求項4に記載の化学機械研磨組成物。
- 前記研磨組成物中に存在する前記研磨材の量が、前記研磨組成物の総質量に対して0.1〜10質量%である、請求項1に記載の化学機械研磨組成物。
- 前記研磨組成物中に存在する前記研磨材の量が、前記研磨組成物の総質量に対して1〜5質量%である、請求項6に記載の化学機械研磨組成物。
- 前記研磨組成物のpHが1〜7である、請求項1に記載の化学機械研磨組成物。
- 前記研磨組成物のpHが2〜5である、請求項8に記載の化学機械研磨組成物。
- (a)α−アルミナ、γ−アルミナ、δ−アルミナ、θ−アルミナ、ダイヤモンド、ボロンカーバイド、シリコンカーバイド、タングステンカーバイド、窒化チタン及びこれらの混合物からなる群から選択される研磨材、
(b)研磨組成物の総質量に対して、カルシウム、ストロンチウム、バリウム、マグネシウム、亜鉛及びこれらの混合物からなる群から選択される少なくとも1種の金属のイオン0.05〜3.5mmol/kg、及び
(c)水を含む液体キャリア
を含んでなる化学機械研磨組成物。 - 前記研磨材がヒュームドアルミナをさらに含む、請求項10に記載の化学機械研磨組成物。
- 前記研磨材がα−アルミナを10質量%以上含む、請求項11に記載の化学機械研磨組成物。
- 前記研磨組成物中に存在する前記研磨材の量が、前記研磨組成物の総質量に対して0.1〜10質量%である、請求項10に記載の化学機械研磨組成物。
- 前記研磨組成物中に存在する前記研磨材の量が、前記研磨組成物の総質量に対して1〜5質量%である、請求項13に記載の化学機械研磨組成物。
- 前記研磨組成物のpHが1〜7である、請求項10に記載の化学機械研磨組成物。
- 前記研磨組成物のpHが2〜5である、請求項15に記載の化学機械研磨組成物。
- (a)基板を用意し、
(b)化学機械研磨組成物を用意し、該化学機械研磨組成物は、
(i)α−アルミナを含む研磨材、
(ii)該研磨組成物の総質量に対して、カルシウム、ストロンチウム、バリウム及びこれらの混合物からなる群から選択される少なくとも1種の金属のイオン0.05〜50mmol/kg、及び
(iii)水を含む液体キャリア
を含んでなり、
(c)該化学機械研磨組成物を該基板の少なくとも一部に適用し、並びに
(d)該研磨組成物を用いて該基板の少なくとも一部を薄く削り、該基板を研磨する
段階を含む、基板の研磨方法。 - 前記化学機械研磨組成物中に存在する前記金属の前記イオンの量が0.05〜10mmol/kgである、請求項17に記載の方法。
- 前記化学機械研磨組成物中に存在する前記金属の前記イオンの量が0.05〜5mmol/kgである、請求項18に記載の方法。
- 前記基板が、白金、イリジウム、ルテニウム、ロジウム、パラジウム、銀、オスミウム、金及びこれらの組み合わせからなる群から選択される貴金属を含み、該貴金属の少なくとも一部を前記研磨組成物を用いて薄く削り、前記基板を研磨する、請求項17に記載の方法。
- 前記基板が白金を含み、該白金の少なくとも一部を前記研磨組成物を用いて薄く削り、前記基板を研磨する、請求項20に記載の方法。
- 前記研磨材がヒュームドアルミナをさらに含む、請求項17に記載の方法。
- 前記研磨材がα−アルミナを10質量%以上含む、請求項22に記載の方法。
- 前記研磨組成物中に存在する前記研磨材の量が、前記研磨組成物の総質量に対して0.1〜10質量%である、請求項17に記載の方法。
- 前記研磨組成物中に存在する前記研磨材の量が、前記研磨組成物の総質量に対して1〜5質量%である、請求項24に記載の方法。
- 前記研磨組成物のpHが1〜7である、請求項17に記載の方法。
- 前記研磨組成物のpHが2〜5である、請求項26に記載の方法。
- (a)基板を用意し、
(b)化学機械研磨組成物を用意し、該化学機械研磨組成物は、
(i)α−アルミナ、γ−アルミナ、δ−アルミナ、θ−アルミナ、ダイヤモンド、ボロンカーバイド、シリコンカーバイド、タングステンカーバイド、窒化チタン及びこれらの混合物からなる群から選択される研磨材、
(ii)該研磨組成物の総質量に対して、カルシウム、ストロンチウム、バリウム、マグネシウム、亜鉛及びこれらの混合物からなる群から選択される少なくとも1種の金属のイオン0.05〜3.5mmol/kg、及び
(iii)水を含む液体キャリア
を含んでなり、
(c)該化学機械研磨組成物を該基板の少なくとも一部に適用し、並びに
(d)該研磨組成物を用いて該基板の少なくとも一部を薄く削り、該基板を研磨する
段階を含む、基板の研磨方法。 - 前記基板が、白金、イリジウム、ルテニウム、ロジウム、パラジウム、銀、オスミウム、金及びこれらの組み合わせからなる群から選択される貴金属を含み、該貴金属の少なくとも一部を前記研磨組成物を用いて薄く削り、前記基板を研磨する、請求項28に記載の方法。
- 前記基板が白金を含み、該白金の少なくとも一部を前記研磨組成物を用いて薄く削り、前記基板を研磨する、請求項29に記載の方法。
- 前記研磨材がヒュームドアルミナをさらに含む、請求項28に記載の方法。
- 前記研磨材がα−アルミナを10質量%以上含む、請求項31に記載の方法。
- 前記研磨組成物中に存在する前記研磨材の量が、前記研磨組成物の総質量に対して0.1〜10質量%である、請求項28に記載の方法。
- 前記研磨組成物中に存在する前記研磨材の量が、前記研磨組成物の総質量に対して1〜5質量%である、請求項33に記載の方法。
- 前記研磨組成物のpHが1〜7である、請求項28に記載の方法。
- 前記研磨組成物のpHが2〜5である、請求項35に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/807,944 US20050211950A1 (en) | 2004-03-24 | 2004-03-24 | Chemical-mechanical polishing composition and method for using the same |
PCT/US2005/008411 WO2005100496A2 (en) | 2004-03-24 | 2005-03-14 | Chemical-mechanical polishing composition and method for using the same |
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JP2011264253A Division JP5781906B2 (ja) | 2004-03-24 | 2011-12-02 | 化学機械研磨組成物及びその使用方法 |
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JP2007531274A5 JP2007531274A5 (ja) | 2008-03-27 |
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JP2011264253A Expired - Fee Related JP5781906B2 (ja) | 2004-03-24 | 2011-12-02 | 化学機械研磨組成物及びその使用方法 |
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Country Status (11)
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US (2) | US20050211950A1 (ja) |
EP (1) | EP1730246B1 (ja) |
JP (2) | JP2007531274A (ja) |
KR (1) | KR101082154B1 (ja) |
CN (1) | CN1938392B (ja) |
AT (1) | ATE540093T1 (ja) |
IL (2) | IL176669A0 (ja) |
MY (1) | MY146598A (ja) |
SG (1) | SG150494A1 (ja) |
TW (1) | TWI299747B (ja) |
WO (1) | WO2005100496A2 (ja) |
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- 2005-03-14 CN CN2005800096376A patent/CN1938392B/zh not_active Expired - Fee Related
- 2005-03-14 JP JP2007505001A patent/JP2007531274A/ja not_active Withdrawn
- 2005-03-14 AT AT05725517T patent/ATE540093T1/de active
- 2005-03-14 SG SG200900786-5A patent/SG150494A1/en unknown
- 2005-03-14 WO PCT/US2005/008411 patent/WO2005100496A2/en active Application Filing
- 2005-03-14 EP EP05725517A patent/EP1730246B1/en not_active Not-in-force
- 2005-03-22 MY MYPI20051241A patent/MY146598A/en unknown
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2006
- 2006-07-02 IL IL176669A patent/IL176669A0/en not_active IP Right Cessation
- 2006-09-22 KR KR1020067019562A patent/KR101082154B1/ko active IP Right Grant
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2009
- 2009-02-26 US US12/393,489 patent/US8101093B2/en not_active Expired - Fee Related
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2011
- 2011-12-02 JP JP2011264253A patent/JP5781906B2/ja not_active Expired - Fee Related
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10796921B2 (en) | 2009-07-16 | 2020-10-06 | Hitachi Chemical Company, Ltd. | CMP fluid and method for polishing palladium |
WO2011099313A1 (ja) * | 2010-02-15 | 2011-08-18 | 日立化成工業株式会社 | Cmp研磨液及び研磨方法 |
JP5533889B2 (ja) * | 2010-02-15 | 2014-06-25 | 日立化成株式会社 | Cmp研磨液及び研磨方法 |
US9799532B2 (en) | 2010-02-15 | 2017-10-24 | Hitachi Chemical Company, Ltd. | CMP polishing solution and polishing method |
CN115926748A (zh) * | 2022-12-21 | 2023-04-07 | 广东红日星实业有限公司 | 一种研磨液及其制备方法和应用 |
Also Published As
Publication number | Publication date |
---|---|
TWI299747B (en) | 2008-08-11 |
KR20060134996A (ko) | 2006-12-28 |
TW200540240A (en) | 2005-12-16 |
US8101093B2 (en) | 2012-01-24 |
WO2005100496A3 (en) | 2005-12-29 |
IL219496A (en) | 2013-04-30 |
KR101082154B1 (ko) | 2011-11-09 |
EP1730246B1 (en) | 2012-01-04 |
IL219496A0 (en) | 2012-06-28 |
ATE540093T1 (de) | 2012-01-15 |
JP5781906B2 (ja) | 2015-09-24 |
SG150494A1 (en) | 2009-03-30 |
MY146598A (en) | 2012-08-30 |
US20090152240A1 (en) | 2009-06-18 |
CN1938392A (zh) | 2007-03-28 |
IL176669A0 (en) | 2006-10-31 |
CN1938392B (zh) | 2010-09-01 |
JP2012049570A (ja) | 2012-03-08 |
EP1730246A2 (en) | 2006-12-13 |
WO2005100496A2 (en) | 2005-10-27 |
US20050211950A1 (en) | 2005-09-29 |
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