ATE540093T1 - Zusammensetzung für das chemisch-mechanische polieren und verwendung - Google Patents

Zusammensetzung für das chemisch-mechanische polieren und verwendung

Info

Publication number
ATE540093T1
ATE540093T1 AT05725517T AT05725517T ATE540093T1 AT E540093 T1 ATE540093 T1 AT E540093T1 AT 05725517 T AT05725517 T AT 05725517T AT 05725517 T AT05725517 T AT 05725517T AT E540093 T1 ATE540093 T1 AT E540093T1
Authority
AT
Austria
Prior art keywords
alumina
chemical
mechanical polishing
mixtures
composition
Prior art date
Application number
AT05725517T
Other languages
English (en)
Inventor
Rege Thesauro F De
K Moeggenborg
V Brusic
B Bayer
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of ATE540093T1 publication Critical patent/ATE540093T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
AT05725517T 2004-03-24 2005-03-14 Zusammensetzung für das chemisch-mechanische polieren und verwendung ATE540093T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/807,944 US20050211950A1 (en) 2004-03-24 2004-03-24 Chemical-mechanical polishing composition and method for using the same
PCT/US2005/008411 WO2005100496A2 (en) 2004-03-24 2005-03-14 Chemical-mechanical polishing composition and method for using the same

Publications (1)

Publication Number Publication Date
ATE540093T1 true ATE540093T1 (de) 2012-01-15

Family

ID=34962673

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05725517T ATE540093T1 (de) 2004-03-24 2005-03-14 Zusammensetzung für das chemisch-mechanische polieren und verwendung

Country Status (11)

Country Link
US (2) US20050211950A1 (de)
EP (1) EP1730246B1 (de)
JP (2) JP2007531274A (de)
KR (1) KR101082154B1 (de)
CN (1) CN1938392B (de)
AT (1) ATE540093T1 (de)
IL (2) IL176669A0 (de)
MY (1) MY146598A (de)
SG (1) SG150494A1 (de)
TW (1) TWI299747B (de)
WO (1) WO2005100496A2 (de)

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US7955519B2 (en) * 2005-09-30 2011-06-07 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
US8372305B2 (en) 2007-05-24 2013-02-12 Basf Se Chemical-mechanical polishing composition comprising metal-organic framework materials
US8425797B2 (en) * 2008-03-21 2013-04-23 Cabot Microelectronics Corporation Compositions for polishing aluminum/copper and titanium in damascene structures
JP5429169B2 (ja) * 2008-08-06 2014-02-26 日立化成株式会社 Ｃｍｐ研磨液及びこのｃｍｐ研磨液を用いた基板の研磨方法
KR101492969B1 (ko) * 2008-11-14 2015-02-16 일진다이아몬드(주) 고경도 피복 분말 및 그 제조 방법
WO2011007588A1 (ja) * 2009-07-16 2011-01-20 日立化成工業株式会社 パラジウム研磨用ｃｍｐ研磨液及び研磨方法
US9799532B2 (en) * 2010-02-15 2017-10-24 Hitachi Chemical Company, Ltd. CMP polishing solution and polishing method
CN102212334B (zh) * 2011-04-19 2013-06-26 浙江露笑光电有限公司 蓝宝石衬底片粗磨研磨液及其配制方法
CN102699811B (zh) * 2012-05-29 2015-07-29 上海瑞钼特金属新材料有限公司 表面高光洁度的难熔金属合金箔片零件及其制备方法
US9011207B2 (en) 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US8845394B2 (en) 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US8998677B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US8998678B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US9039488B2 (en) 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US8920667B2 (en) * 2013-01-30 2014-12-30 Cabot Microelectronics Corporation Chemical-mechanical polishing composition containing zirconia and metal oxidizer
CN103254799A (zh) * 2013-05-29 2013-08-21 陈玉祥 一种亲水金刚石悬浮研磨抛光液及其制备方法
US9434859B2 (en) * 2013-09-24 2016-09-06 Cabot Microelectronics Corporation Chemical-mechanical planarization of polymer films
WO2015057433A1 (en) * 2013-10-18 2015-04-23 Cabot Microelectronics Corporation Polishing composition and method for nickel-phosphorous coated memory disks
CN104592935B (zh) * 2015-01-04 2016-04-27 江苏中晶科技有限公司 硬质材料研磨用加速剂
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
US11286403B2 (en) 2018-07-20 2022-03-29 Dongjin Semichem Co., Ltd Chemical mechanical polishing composition, chemical mechanical polishing slurry and method for polishing substrate
EP3894497A4 (de) * 2018-12-10 2022-09-14 CMC Materials, Inc. Oxidationsmittelfreie aufschlämmung für ruthenium-cmp
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier
CN111421391A (zh) * 2020-03-09 2020-07-17 大连理工大学 一种单晶金刚石晶片的双面化学机械抛光方法
CN115926748B (zh) * 2022-12-21 2024-07-12 广东红日星实业有限公司 一种研磨液及其制备方法和应用

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Also Published As

Publication number Publication date
MY146598A (en) 2012-08-30
IL219496A (en) 2013-04-30
TWI299747B (en) 2008-08-11
EP1730246B1 (de) 2012-01-04
SG150494A1 (en) 2009-03-30
CN1938392A (zh) 2007-03-28
EP1730246A2 (de) 2006-12-13
JP2012049570A (ja) 2012-03-08
US20050211950A1 (en) 2005-09-29
JP2007531274A (ja) 2007-11-01
IL176669A0 (en) 2006-10-31
WO2005100496A3 (en) 2005-12-29
IL219496A0 (en) 2012-06-28
US20090152240A1 (en) 2009-06-18
KR20060134996A (ko) 2006-12-28
TW200540240A (en) 2005-12-16
US8101093B2 (en) 2012-01-24
CN1938392B (zh) 2010-09-01
KR101082154B1 (ko) 2011-11-09
WO2005100496A2 (en) 2005-10-27
JP5781906B2 (ja) 2015-09-24

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