SG143207A1 - Gas baffle and distributor for semiconductor processing chamber - Google Patents

Gas baffle and distributor for semiconductor processing chamber

Info

Publication number
SG143207A1
SG143207A1 SG200718087-0A SG2007180870A SG143207A1 SG 143207 A1 SG143207 A1 SG 143207A1 SG 2007180870 A SG2007180870 A SG 2007180870A SG 143207 A1 SG143207 A1 SG 143207A1
Authority
SG
Singapore
Prior art keywords
gas
distributor
processing chamber
baffle
semiconductor processing
Prior art date
Application number
SG200718087-0A
Other languages
English (en)
Inventor
Soonam Park
Farhan Ahmad
Hemant P Mungekar
Sanjay Kamath
Young S Lee
Siqing Lu
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG143207A1 publication Critical patent/SG143207A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
SG200718087-0A 2006-11-28 2007-11-27 Gas baffle and distributor for semiconductor processing chamber SG143207A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/564,150 US7740706B2 (en) 2006-11-28 2006-11-28 Gas baffle and distributor for semiconductor processing chamber

Publications (1)

Publication Number Publication Date
SG143207A1 true SG143207A1 (en) 2008-06-27

Family

ID=39485103

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200718087-0A SG143207A1 (en) 2006-11-28 2007-11-27 Gas baffle and distributor for semiconductor processing chamber

Country Status (6)

Country Link
US (1) US7740706B2 (ko)
JP (1) JP2008147648A (ko)
KR (1) KR101489632B1 (ko)
CN (1) CN101191200B (ko)
SG (1) SG143207A1 (ko)
TW (1) TWI390652B (ko)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7510624B2 (en) * 2004-12-17 2009-03-31 Applied Materials, Inc. Self-cooling gas delivery apparatus under high vacuum for high density plasma applications
US7722719B2 (en) * 2005-03-07 2010-05-25 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US7758698B2 (en) * 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US20080121177A1 (en) * 2006-11-28 2008-05-29 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US20080124944A1 (en) * 2006-11-28 2008-05-29 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US9157152B2 (en) * 2007-03-29 2015-10-13 Tokyo Electron Limited Vapor deposition system
WO2009049020A2 (en) * 2007-10-11 2009-04-16 Valence Process Equipment, Inc. Chemical vapor deposition reactor
US8110068B2 (en) * 2008-03-20 2012-02-07 Novellus Systems, Inc. Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes
US9591738B2 (en) 2008-04-03 2017-03-07 Novellus Systems, Inc. Plasma generator systems and methods of forming plasma
US9222172B2 (en) 2008-08-20 2015-12-29 Applied Materials, Inc. Surface treated aluminum nitride baffle
WO2010137397A1 (ja) * 2009-05-26 2010-12-02 シャープ株式会社 プラズマ処理装置およびそのクリーニング方法
TW201511122A (zh) 2009-09-25 2015-03-16 Applied Materials Inc 用於感應耦合電漿反應器中的高效率氣體解離之方法及設備
DE112012005741T5 (de) * 2012-01-25 2014-11-06 Cummins Ip, Inc. Vorrichtung für die Ermöglichung der Reduktionsmittelzersetzung und -Mischung
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
TW201443984A (zh) * 2013-02-05 2014-11-16 Hitachi Int Electric Inc 清洗方法、半導體裝置之製造方法、基板處理裝置、以及記錄媒體及清洗結束判定方法
US9399228B2 (en) * 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
CN104798446B (zh) * 2013-03-12 2017-09-08 应用材料公司 具有方位角与径向分布控制的多区域气体注入组件
CN103839841A (zh) * 2014-03-17 2014-06-04 上海华虹宏力半导体制造有限公司 嵌套工具和反应腔室
KR102364760B1 (ko) * 2014-07-03 2022-02-18 어플라이드 머티어리얼스, 인코포레이티드 캐러셀 뱃치 에피택시 시스템
US10465288B2 (en) * 2014-08-15 2019-11-05 Applied Materials, Inc. Nozzle for uniform plasma processing
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
KR102373977B1 (ko) 2015-10-05 2022-03-15 삼성전자주식회사 기판 처리 장치
CN106876299B (zh) * 2015-12-11 2019-08-23 北京北方华创微电子装备有限公司 半导体加工设备
US9758868B1 (en) 2016-03-10 2017-09-12 Lam Research Corporation Plasma suppression behind a showerhead through the use of increased pressure
GB2598500B (en) 2017-06-06 2022-08-17 Cummins Emission Solutions Inc Systems and methods for mixing exhaust gases and reductant in an aftertreatment system
US11944988B2 (en) * 2018-05-18 2024-04-02 Applied Materials, Inc. Multi-zone showerhead
KR102246678B1 (ko) * 2019-08-20 2021-05-04 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
DE112021002674B4 (de) 2020-05-08 2024-07-25 Cummins Emission Solutions Inc. Konfigurierbare Nachbehandlungssysteme, einschliesslich eines Gehäuses
JP2023526591A (ja) 2020-05-20 2023-06-22 ラム リサーチ コーポレーション リモートプラズマ洗浄（ｒｐｃ）方向流装置
TW202212618A (zh) * 2020-09-02 2022-04-01 美商應用材料股份有限公司 控制偶然沉積的噴頭設計
TW202230442A (zh) * 2020-10-09 2022-08-01 美商蘭姆研究公司 無面板噴淋頭

Family Cites Families (59)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2608417C3 (de) * 1976-03-01 1981-02-12 Degussa Ag, 6000 Frankfurt Verfahren und vorrichtung zur herstellung von russ
JPS5841658B2 (ja) 1979-06-15 1983-09-13 パイオニア株式会社 ドライエッチング装置
GB2125937B (en) * 1982-08-26 1986-06-25 Metal Box Plc Dispensing volatile liquids
US5188672A (en) * 1990-06-28 1993-02-23 Applied Materials, Inc. Reduction of particulate contaminants in chemical-vapor-deposition apparatus
US5865896A (en) * 1993-08-27 1999-02-02 Applied Materials, Inc. High density plasma CVD reactor with combined inductive and capacitive coupling
KR950020993A (ko) * 1993-12-22 1995-07-26 김광호 반도체 제조장치
US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
US5643394A (en) 1994-09-16 1997-07-01 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
TW356554B (en) * 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
US5772771A (en) 1995-12-13 1998-06-30 Applied Materials, Inc. Deposition chamber for improved deposition thickness uniformity
US6070551A (en) * 1996-05-13 2000-06-06 Applied Materials, Inc. Deposition chamber and method for depositing low dielectric constant films
US6013155A (en) * 1996-06-28 2000-01-11 Lam Research Corporation Gas injection system for plasma processing
US6170428B1 (en) 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US5804259A (en) * 1996-11-07 1998-09-08 Applied Materials, Inc. Method and apparatus for depositing a multilayered low dielectric constant film
US5994662A (en) 1997-05-29 1999-11-30 Applied Materials, Inc. Unique baffle to deflect remote plasma clean gases
US6083344A (en) * 1997-05-29 2000-07-04 Applied Materials, Inc. Multi-zone RF inductively coupled source configuration
US5937323A (en) * 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
US6143078A (en) 1998-11-13 2000-11-07 Applied Materials, Inc. Gas distribution system for a CVD processing chamber
US6383964B1 (en) * 1998-11-27 2002-05-07 Kyocera Corporation Ceramic member resistant to halogen-plasma corrosion
KR100302609B1 (ko) * 1999-05-10 2001-09-13 김영환 온도가변 가스 분사 장치
US6413871B2 (en) * 1999-06-22 2002-07-02 Applied Materials, Inc. Nitrogen treatment of polished halogen-doped silicon glass
JP4487338B2 (ja) * 1999-08-31 2010-06-23 東京エレクトロン株式会社 成膜処理装置及び成膜処理方法
US6287643B1 (en) * 1999-09-30 2001-09-11 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US6444039B1 (en) * 2000-03-07 2002-09-03 Simplus Systems Corporation Three-dimensional showerhead apparatus
US6821910B2 (en) * 2000-07-24 2004-11-23 University Of Maryland, College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
US6450117B1 (en) 2000-08-07 2002-09-17 Applied Materials, Inc. Directing a flow of gas in a substrate processing chamber
US6302965B1 (en) * 2000-08-15 2001-10-16 Applied Materials, Inc. Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces
US6335288B1 (en) * 2000-08-24 2002-01-01 Applied Materials, Inc. Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
AU2001283944A1 (en) * 2000-09-22 2002-04-02 Aixtron Ag Gas inlet mechanism for cvd-method and device
DE10064944A1 (de) * 2000-09-22 2002-04-11 Aixtron Ag Verfahren zum Abscheiden von insbesondere kristallinen Schichten, Gaseinlassorgan sowie Vorrichtung zur Durchführung des Verfahrens
US6740601B2 (en) * 2001-05-11 2004-05-25 Applied Materials Inc. HDP-CVD deposition process for filling high aspect ratio gaps
US6596653B2 (en) * 2001-05-11 2003-07-22 Applied Materials, Inc. Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
US6676760B2 (en) * 2001-08-16 2004-01-13 Appiled Materials, Inc. Process chamber having multiple gas distributors and method
JP2003100717A (ja) * 2001-09-21 2003-04-04 Tokyo Electron Ltd プラズマ処理装置
DE10153463A1 (de) * 2001-10-30 2003-05-15 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden insbesondere kristalliner Schichten auf insbesondere kristallinen Substraten
US20040060514A1 (en) * 2002-01-25 2004-04-01 Applied Materials, Inc. A Delaware Corporation Gas distribution showerhead
JP4074461B2 (ja) * 2002-02-06 2008-04-09 東京エレクトロン株式会社 成膜方法および成膜装置、半導体装置の製造方法
JP4292777B2 (ja) * 2002-06-17 2009-07-08 ソニー株式会社 薄膜形成装置
US6884296B2 (en) * 2002-08-23 2005-04-26 Micron Technology, Inc. Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
US7141138B2 (en) * 2002-09-13 2006-11-28 Applied Materials, Inc. Gas delivery system for semiconductor processing
US20040231798A1 (en) * 2002-09-13 2004-11-25 Applied Materials, Inc. Gas delivery system for semiconductor processing
US7316761B2 (en) * 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
US6989061B2 (en) * 2003-08-22 2006-01-24 Kastalon, Inc. Nozzle for use in rotational casting apparatus
CN1591800A (zh) * 2003-09-01 2005-03-09 上海宏力半导体制造有限公司 改善高压元件结构的制造方法
US20050218115A1 (en) * 2004-02-06 2005-10-06 Applied Materials, Inc. Anti-clogging nozzle for semiconductor processing
US20060048707A1 (en) 2004-09-03 2006-03-09 Applied Materials, Inc. Anti-clogging nozzle for semiconductor processing
US7183227B1 (en) * 2004-07-01 2007-02-27 Applied Materials, Inc. Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas
US20060075967A1 (en) * 2004-10-12 2006-04-13 Applied Materials, Inc. Magnetic-field concentration in inductively coupled plasma reactors
US7510624B2 (en) * 2004-12-17 2009-03-31 Applied Materials, Inc. Self-cooling gas delivery apparatus under high vacuum for high density plasma applications
JP2007182360A (ja) * 2005-02-16 2007-07-19 Nissan Motor Co Ltd ウィスカー形成体及びこれを用いた電気化学キャパシタ
KR100854995B1 (ko) * 2005-03-02 2008-08-28 삼성전자주식회사 고밀도 플라즈마 화학 기상 증착 장치
US7722719B2 (en) 2005-03-07 2010-05-25 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
JP2006310481A (ja) 2005-04-27 2006-11-09 Elpida Memory Inc Ｃｖｄ装置
JP2007305890A (ja) 2006-05-15 2007-11-22 Elpida Memory Inc 半導体製造装置
US7758698B2 (en) * 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US20080121177A1 (en) * 2006-11-28 2008-05-29 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US20080124944A1 (en) * 2006-11-28 2008-05-29 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber
US7572647B2 (en) * 2007-02-02 2009-08-11 Applied Materials, Inc. Internal balanced coil for inductively coupled high density plasma processing chamber
US20080188090A1 (en) * 2007-02-02 2008-08-07 Applied Materials, Inc. Internal balanced coil for inductively coupled high density plasma processing chamber

Also Published As

Publication number Publication date
KR101489632B1 (ko) 2015-02-04
TW200834783A (en) 2008-08-16
KR20080048430A (ko) 2008-06-02
JP2008147648A (ja) 2008-06-26
CN101191200A (zh) 2008-06-04
US7740706B2 (en) 2010-06-22
CN101191200B (zh) 2011-12-07
US20080121179A1 (en) 2008-05-29
TWI390652B (zh) 2013-03-21

Similar Documents

Publication Publication Date Title
SG143207A1 (en) Gas baffle and distributor for semiconductor processing chamber
TW200636809A (en) Gas baffle and distributor for semiconductor processing chamber
WO2008061628A3 (en) Ion transfer arrangement
TW200738904A (en) Methods and arrangement for a highly efficient gas distribution arrangement
GB2419896A (en) Chemical vapor deposition reactor
TWI369414B (en) Splashguard and inlet diffuser for high vacuum, high flow bubbler vessel
TW200629399A (en) Self-cooling gas delivery apparatus under high vacuum for high density plasma applications
TW200737298A (en) Substrate holding device, exposure device, exposure method, and device fabrication method
SG146566A1 (en) Gas flow diffuser
TW200728497A (en) CVD reactor with a gas inlet member
WO2004059033A3 (en) Blocker plate bypass arrangement to improve clean rate at the edge of a processing chamber
TW200615405A (en) Systems and methods for manufacturing granular material, and for measuring and reducing dust in granular material
TW200721269A (en) Deposition apparatus for semiconductor processing
SG158097A1 (en) Method and apparatus to help promote contact of gas with vaporized material
WO2005052998A9 (en) Gas distribution showerhead featuring exhaust apertures
TW200717685A (en) Fitting structure of mounting stand device, treatment device, and method for preventing discharge between feeder in mounting stand device
TW200802549A (en) Vertical plasma processing apparatus for semiconductor process
WO2011059891A3 (en) Chamber with uniform flow and plasma distribution
TW200501242A (en) Semiconductor manufacturing device and heating unit thereof
EP1777590A3 (en) Gas shower, lithographic apparatus and use of a gas shower
UA94098C2 (ru) Технологическая печь и подобное оборудование
TW200644122A (en) Substrate processing method and recording medium
FR2885825B1 (fr) Dispositif pour le centrage et le serrage de pieces tubulaires
TW200723429A (en) Wafer holder
RO201800019U3 (ro) Hotă de aspiraţie de laborator