SG139650A1 - Lithographic apparatus, aberration correction device and device manufacturing method - Google Patents
Lithographic apparatus, aberration correction device and device manufacturing methodInfo
- Publication number
- SG139650A1 SG139650A1 SG200705084-2A SG2007050842A SG139650A1 SG 139650 A1 SG139650 A1 SG 139650A1 SG 2007050842 A SG2007050842 A SG 2007050842A SG 139650 A1 SG139650 A1 SG 139650A1
- Authority
- SG
- Singapore
- Prior art keywords
- aberration correction
- correction device
- lithographic apparatus
- describable
- elements
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/488,172 US7372633B2 (en) | 2006-07-18 | 2006-07-18 | Lithographic apparatus, aberration correction device and device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG139650A1 true SG139650A1 (en) | 2008-02-29 |
Family
ID=38510377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200705084-2A SG139650A1 (en) | 2006-07-18 | 2007-07-06 | Lithographic apparatus, aberration correction device and device manufacturing method |
Country Status (7)
Country | Link |
---|---|
US (2) | US7372633B2 (ko) |
EP (1) | EP1881373A1 (ko) |
JP (1) | JP4536088B2 (ko) |
KR (1) | KR100873972B1 (ko) |
CN (1) | CN101109909B (ko) |
SG (1) | SG139650A1 (ko) |
TW (1) | TWI361958B (ko) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010506388A (ja) * | 2006-10-02 | 2010-02-25 | カール・ツァイス・エスエムティー・アーゲー | 光学システムの結像特性を改善する方法及びその光学システム |
DE102007062265A1 (de) * | 2006-12-29 | 2008-07-03 | Carl Zeiss Smt Ag | Projektionsobjektiv für die Lithographie |
US8237913B2 (en) * | 2007-05-08 | 2012-08-07 | Asml Netherlands B.V. | Lithographic apparatus and method |
DE102008011501A1 (de) * | 2008-02-25 | 2009-08-27 | Carl Zeiss Smt Ag | Verfahren zum Betreiben eines Beleuchtungssystems einer mikrolithographischen Projektionsbelichtungsanlage |
DE102008001892A1 (de) * | 2008-05-21 | 2009-11-26 | Carl Zeiss Smt Ag | Optisches System für die Mikrolithographie |
NL1036905A1 (nl) * | 2008-06-03 | 2009-12-04 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
CN101609261B (zh) * | 2008-06-16 | 2011-07-06 | 南亚科技股份有限公司 | 一种曝光的方法 |
DE102008043243A1 (de) * | 2008-10-28 | 2009-10-29 | Carl Zeiss Smt Ag | Projektionsobjektiv für die Mikrolithographie sowie Verfahren zum Verbessern der Abbildungseigenschaften eines Projektionsobjektivs |
NL2003806A (en) * | 2008-12-15 | 2010-06-16 | Asml Netherlands Bv | Method for a lithographic apparatus. |
JP5312058B2 (ja) * | 2009-01-19 | 2013-10-09 | キヤノン株式会社 | 投影光学系、露光装置及びデバイス製造方法 |
KR101675380B1 (ko) | 2010-02-19 | 2016-11-14 | 삼성전자주식회사 | 오버레이 보정방법 및 그를 이용한 반도체 제조방법 |
CN102236260B (zh) * | 2010-04-27 | 2013-05-22 | 上海微电子装备有限公司 | 一种波像差校正系统与方法 |
JP6012628B2 (ja) | 2011-01-20 | 2016-10-25 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィのための投影露光ツールを作動させる方法 |
NL2008285A (en) * | 2011-03-11 | 2012-09-12 | Asml Netherlands Bv | Method of controlling a lithographic apparatus, device manufacturing method, lithographic apparatus, computer program product and method of improving a mathematical model of a lithographic process. |
US8625078B2 (en) * | 2011-04-06 | 2014-01-07 | Nanya Technology Corp. | Illumination design for lens heating mitigation |
US8736814B2 (en) * | 2011-06-13 | 2014-05-27 | Micron Technology, Inc. | Lithography wave-front control system and method |
CN102368114A (zh) * | 2011-11-15 | 2012-03-07 | 中国科学院西安光学精密机械研究所 | 基于波像差检测的光学系统面形补偿装调方法 |
US9940427B2 (en) * | 2012-02-09 | 2018-04-10 | Asml Netherlands B.V. | Lens heating aware source mask optimization for advanced lithography |
US10133184B2 (en) | 2012-04-25 | 2018-11-20 | Nikon Corporation | Using customized lens pupil optimization to enhance lithographic imaging in a source-mask optimization scheme |
JP6410406B2 (ja) * | 2012-11-16 | 2018-10-24 | キヤノン株式会社 | 投影光学系、露光装置および物品の製造方法 |
JP2014120682A (ja) * | 2012-12-18 | 2014-06-30 | Canon Inc | 露光装置、露光方法及びデバイス製造方法 |
DE102013204572A1 (de) * | 2013-03-15 | 2014-09-18 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage mit hochflexiblem Manipulator |
WO2014203961A1 (ja) | 2013-06-21 | 2014-12-24 | Hoya株式会社 | マスクブランク用基板、マスクブランク、転写用マスク及びこれらの製造方法並びに半導体デバイスの製造方法 |
CN103322942A (zh) * | 2013-07-15 | 2013-09-25 | 中国科学院光电技术研究所 | 基于波像差的光学系统各光学件面形的检测方法 |
JP6381210B2 (ja) * | 2013-12-27 | 2018-08-29 | キヤノン株式会社 | 光学素子ユニット、回転方向の相対位置の調整方法、露光装置、物品の製造方法 |
US10248027B2 (en) * | 2014-01-12 | 2019-04-02 | Asml Netherlands B.V. | Projection system |
JP6422307B2 (ja) | 2014-11-05 | 2018-11-14 | キヤノン株式会社 | 露光方法、露光装置、および物品の製造方法 |
US10078272B2 (en) * | 2014-12-02 | 2018-09-18 | Asml Netherlands B.V. | Lithographic method and apparatus |
US20170363952A1 (en) | 2014-12-19 | 2017-12-21 | Hoya Corporation | Mask blank substrate, mask blank, and methods for manufacturing them, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
JP6730850B2 (ja) * | 2016-06-01 | 2020-07-29 | キヤノン株式会社 | 露光条件の決定方法、プログラム、情報処理装置、露光装置、および物品製造方法 |
JP6971637B2 (ja) * | 2016-06-29 | 2021-11-24 | キヤノン株式会社 | アタッチメント光学系、撮像光学系、および、撮像装置 |
JP6744984B2 (ja) * | 2016-08-11 | 2020-08-19 | エーエスエムエル ホールディング エヌ.ブイ. | 波面の可変コレクタ |
JP6445501B2 (ja) * | 2016-09-20 | 2018-12-26 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィのための投影露光ツールを作動させる方法 |
CN106405869B (zh) * | 2016-12-14 | 2019-06-14 | 北京耐德佳显示技术有限公司 | 可调节焦距的透镜组 |
NL2021608A (en) * | 2017-09-20 | 2019-03-26 | Asml Netherlands Bv | Control system for a lithographic apparatus |
US10809624B2 (en) | 2018-10-18 | 2020-10-20 | Samsung Electronics Co., Ltd. | Extreme ultraviolet exposure apparatus and method, and method of manufacturing semiconductor device by using the exposure method |
JP2019070812A (ja) * | 2018-11-29 | 2019-05-09 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィのための投影露光ツールを作動させる方法 |
JP7178932B2 (ja) * | 2019-03-12 | 2022-11-28 | キヤノン株式会社 | 露光装置、および物品製造方法 |
KR20240055798A (ko) * | 2021-09-01 | 2024-04-29 | 코닝 인코포레이티드 | 변형 가능 렌즈 플레이트를 사용한 배율 조정 가능 투사 시스템 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7656504B1 (en) * | 1990-08-21 | 2010-02-02 | Nikon Corporation | Projection exposure apparatus with luminous flux distribution |
JP3341269B2 (ja) | 1993-12-22 | 2002-11-05 | 株式会社ニコン | 投影露光装置、露光方法、半導体の製造方法及び投影光学系の調整方法 |
JPH10142555A (ja) * | 1996-11-06 | 1998-05-29 | Nikon Corp | 投影露光装置 |
JP3303758B2 (ja) * | 1996-12-28 | 2002-07-22 | キヤノン株式会社 | 投影露光装置及びデバイスの製造方法 |
US6235438B1 (en) * | 1997-10-07 | 2001-05-22 | Nikon Corporation | Projection exposure method and apparatus |
JP3306772B2 (ja) * | 1998-07-01 | 2002-07-24 | キヤノン株式会社 | 投影露光装置及びデバイスの製造方法 |
JP2002175964A (ja) | 2000-12-06 | 2002-06-21 | Nikon Corp | 観察装置およびその製造方法、露光装置、並びにマイクロデバイスの製造方法 |
EP1347501A4 (en) * | 2000-12-22 | 2006-06-21 | Nikon Corp | WAVE FRONT ABERRATION MEASURING INSTRUMENT, WAVE FRONT ABERRATION MEASUREMENT METHOD, EXPOSURE APPARATUS, AND METHOD FOR MANUFACTURING MICRODISPOSITIVE DEVICE |
DE10140608A1 (de) * | 2001-08-18 | 2003-03-06 | Zeiss Carl | Vorrichtung zur Justage eines optischen Elements |
JP2004281697A (ja) * | 2003-03-14 | 2004-10-07 | Canon Inc | 露光装置及び収差補正方法 |
US7262831B2 (en) * | 2004-12-01 | 2007-08-28 | Asml Netherlands B.V. | Lithographic projection apparatus and device manufacturing method using such lithographic projection apparatus |
-
2006
- 2006-07-18 US US11/488,172 patent/US7372633B2/en active Active
-
2007
- 2007-07-06 SG SG200705084-2A patent/SG139650A1/en unknown
- 2007-07-09 EP EP07252737A patent/EP1881373A1/en not_active Ceased
- 2007-07-10 TW TW096125121A patent/TWI361958B/zh not_active IP Right Cessation
- 2007-07-11 JP JP2007181687A patent/JP4536088B2/ja not_active Expired - Fee Related
- 2007-07-16 KR KR1020070070963A patent/KR100873972B1/ko active IP Right Grant
- 2007-07-18 CN CN2007101366547A patent/CN101109909B/zh active Active
-
2008
- 2008-04-07 US US12/078,847 patent/US7538952B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101109909B (zh) | 2011-05-11 |
KR20080008248A (ko) | 2008-01-23 |
EP1881373A1 (en) | 2008-01-23 |
JP4536088B2 (ja) | 2010-09-01 |
US7538952B2 (en) | 2009-05-26 |
JP2008028388A (ja) | 2008-02-07 |
US7372633B2 (en) | 2008-05-13 |
TW200811608A (en) | 2008-03-01 |
KR100873972B1 (ko) | 2008-12-17 |
TWI361958B (en) | 2012-04-11 |
CN101109909A (zh) | 2008-01-23 |
US20080024874A1 (en) | 2008-01-31 |
US20080212183A1 (en) | 2008-09-04 |
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