SG131005A1 - Novel tarc material for immersion watermark reduction - Google Patents

Novel tarc material for immersion watermark reduction

Info

Publication number
SG131005A1
SG131005A1 SG200605198-1A SG2006051981A SG131005A1 SG 131005 A1 SG131005 A1 SG 131005A1 SG 2006051981 A SG2006051981 A SG 2006051981A SG 131005 A1 SG131005 A1 SG 131005A1
Authority
SG
Singapore
Prior art keywords
immersion
novel
tarc material
watermark
reduction
Prior art date
Application number
SG200605198-1A
Other languages
English (en)
Inventor
Ching-Yu Chang
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG131005A1 publication Critical patent/SG131005A1/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Optics & Photonics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
SG200605198-1A 2005-09-30 2006-08-02 Novel tarc material for immersion watermark reduction SG131005A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US72231605P 2005-09-30 2005-09-30
US72264605P 2005-09-30 2005-09-30
US11/324,588 US7993808B2 (en) 2005-09-30 2006-01-03 TARC material for immersion watermark reduction

Publications (1)

Publication Number Publication Date
SG131005A1 true SG131005A1 (en) 2007-04-26

Family

ID=37882463

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200605198-1A SG131005A1 (en) 2005-09-30 2006-08-02 Novel tarc material for immersion watermark reduction

Country Status (10)

Country Link
US (3) US7993808B2 (ko)
JP (1) JP2007102220A (ko)
KR (1) KR20070037308A (ko)
CN (2) CN1940722B (ko)
DE (1) DE102006046453B4 (ko)
FR (1) FR2891631B1 (ko)
IL (1) IL178317A (ko)
NL (1) NL1032579C2 (ko)
SG (1) SG131005A1 (ko)
TW (1) TWI341958B (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070002296A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction
US7927779B2 (en) * 2005-06-30 2011-04-19 Taiwan Semiconductor Manufacturing Companym, Ltd. Water mark defect prevention for immersion lithography
US8383322B2 (en) * 2005-08-05 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography watermark reduction
US7972761B2 (en) * 2006-08-04 2011-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist materials and photolithography process
US7993808B2 (en) 2005-09-30 2011-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. TARC material for immersion watermark reduction
US8518628B2 (en) * 2006-09-22 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Surface switchable photoresist
US8841058B2 (en) 2010-08-03 2014-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography material for immersion lithography processes
US10007177B2 (en) 2015-08-21 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method to define multiple layer patterns using double exposures
US9793183B1 (en) 2016-07-29 2017-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for measuring and improving overlay using electronic microscopic imaging and digital processing
US10043650B2 (en) 2016-09-22 2018-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for wet chemical bath process
US11054742B2 (en) 2018-06-15 2021-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. EUV metallic resist performance enhancement via additives
US11069526B2 (en) 2018-06-27 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Using a self-assembly layer to facilitate selective formation of an etching stop layer
US10867805B2 (en) 2018-06-29 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Selective removal of an etching stop layer for improving overlay shift tolerance
US11201051B2 (en) * 2018-11-13 2021-12-14 Tokyo Electron Limited Method for layer by layer growth of conformal films
CN110597021B (zh) * 2019-09-20 2021-04-23 上海华力微电子有限公司 浸没式光刻工艺中晶圆表面残水缺陷的改善方法

Family Cites Families (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212047A (en) * 1990-04-10 1993-05-18 E. I. Du Pont De Nemours And Company Resist material and process for use
JP2956387B2 (ja) * 1992-05-25 1999-10-04 三菱電機株式会社 レジスト被覆膜材料、その形成方法とそれを用いたパターン形成方法および半導体装置
US5325845A (en) * 1992-06-08 1994-07-05 Adair Edwin Lloyd Steerable sheath for use with selected removable optical catheter
JP3441167B2 (ja) 1993-06-30 2003-08-25 株式会社東芝 感光性組成物及びそれを用いたパターン形成方法
JP3297199B2 (ja) 1993-09-14 2002-07-02 株式会社東芝 レジスト組成物
US5413107A (en) * 1994-02-16 1995-05-09 Tetrad Corporation Ultrasonic probe having articulated structure and rotatable transducer head
US6007531A (en) * 1995-11-21 1999-12-28 Catheter Imaging Systems, Inc. Steerable catheter having disposable module and sterilizable handle and method of connecting same
JP3345869B2 (ja) 1995-12-01 2002-11-18 ジェイエスアール株式会社 感放射線性組成物
JP3743187B2 (ja) * 1998-05-08 2006-02-08 住友化学株式会社 フォトレジスト組成物
TWI250379B (en) 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
US6361219B1 (en) * 1999-07-29 2002-03-26 Lucent Technologies Inc. End finishing of plastic optical fibers using laser ablation
JP4135277B2 (ja) 1999-10-12 2008-08-20 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3821211B2 (ja) 2000-03-21 2006-09-13 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4279559B2 (ja) * 2001-04-27 2009-06-17 シー・アール・バード・インコーポレーテッド マッピング及び／又は切除のための電気生理学的カテーテル
US6936398B2 (en) 2001-05-09 2005-08-30 Massachusetts Institute Of Technology Resist with reduced line edge roughness
US7192681B2 (en) * 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP3894001B2 (ja) 2001-09-06 2007-03-14 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US7461119B2 (en) 2001-09-29 2008-12-02 Siebel Systems, Inc. Method, apparatus, and system for managing status of requests in a client server environment
JP3827556B2 (ja) 2001-10-31 2006-09-27 松下電器産業株式会社 パターン形成方法
JP3810309B2 (ja) 2001-12-03 2006-08-16 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6849378B2 (en) * 2002-04-17 2005-02-01 Samsung Electronics Co., Ltd. Photosensitive polymers, resist compositions comprising the same, and methods for forming photoresistive patterns
US6713236B2 (en) * 2002-07-03 2004-03-30 Infineon Technologies North America Corp. Lithography method for preventing lithographic exposure of peripheral region of semiconductor wafer
JP4084235B2 (ja) 2002-08-22 2008-04-30 株式会社神戸製鋼所 保護膜積層微細構造体および該構造体を用いた微細構造体の乾燥方法
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
JP4525062B2 (ja) 2002-12-10 2010-08-18 株式会社ニコン 露光装置及びデバイス製造方法、露光システム
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
JP2005101498A (ja) 2003-03-04 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法
WO2004081664A2 (en) * 2003-03-11 2004-09-23 Arch Specialty Chemicals, Inc. Novel photosensitive resin compositions
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
JP2005099646A (ja) * 2003-03-28 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法
JP4469561B2 (ja) * 2003-05-09 2010-05-26 富士フイルム株式会社 感光性組成物
TWI347741B (en) 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4346358B2 (ja) * 2003-06-20 2009-10-21 Ｎｅｃエレクトロニクス株式会社 化学増幅型レジスト組成物およびそれを用いた半導体装置の製造方法、パターン形成方法
JP4303044B2 (ja) * 2003-06-23 2009-07-29 Ｎｅｃエレクトロニクス株式会社 化学増幅型レジスト組成物および該化学増幅型レジスト組成物を用いた半導体集積回路装置の製造方法
US7090963B2 (en) * 2003-06-25 2006-08-15 International Business Machines Corporation Process for forming features of 50 nm or less half-pitch with chemically amplified resist imaging
US7186486B2 (en) 2003-08-04 2007-03-06 Micronic Laser Systems Ab Method to pattern a substrate
US20050029492A1 (en) 2003-08-05 2005-02-10 Hoshang Subawalla Processing of semiconductor substrates with dense fluids comprising acetylenic diols and/or alcohols
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
JP4265766B2 (ja) 2003-08-25 2009-05-20 東京応化工業株式会社 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
JP2005081302A (ja) 2003-09-10 2005-03-31 Japan Organo Co Ltd 超臨界流体による電子部品部材類の洗浄方法及び洗浄装置
JP2005136374A (ja) 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
TWI286555B (en) * 2003-10-23 2007-09-11 Shinetsu Chemical Co Polymers, resist compositions and patterning process
JP2005128455A (ja) 2003-10-27 2005-05-19 Tokyo Ohka Kogyo Co Ltd ホトレジスト組成物およびレジストパターン形成方法
JP4609878B2 (ja) 2003-10-28 2011-01-12 東京応化工業株式会社 レジスト上層膜形成材料、およびこれを用いたレジストパターン形成方法
JP5301070B2 (ja) 2004-02-16 2013-09-25 東京応化工業株式会社 液浸露光プロセス用レジスト保護膜形成用材料、および該保護膜を用いたレジストパターン形成方法
WO2005081063A1 (ja) * 2004-02-20 2005-09-01 Daikin Industries, Ltd. 液浸リソグラフィーに用いるレジスト積層体
US7473512B2 (en) * 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
US20050202351A1 (en) * 2004-03-09 2005-09-15 Houlihan Francis M. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
JP4220423B2 (ja) 2004-03-24 2009-02-04 株式会社東芝 レジストパターン形成方法
KR100557222B1 (ko) 2004-04-28 2006-03-07 동부아남반도체 주식회사 이머전 리소그라피 공정의 액체 제거 장치 및 방법
EP1598704B1 (en) 2004-05-17 2009-12-02 FUJIFILM Corporation Pattern forming method
KR100599081B1 (ko) * 2004-05-27 2006-07-13 삼성전자주식회사 포토레지스트 조성물 및 이를 사용한 패턴 형성방법
US7122020B2 (en) * 2004-06-25 2006-10-17 Mogul Enterprises, Inc. Linkage steering mechanism for deflectable catheters
JP2006013378A (ja) 2004-06-29 2006-01-12 Tdk Corp サーミスタ素体形成用樹脂組成物及びサーミスタ
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006024692A (ja) * 2004-07-07 2006-01-26 Toshiba Corp レジストパターン形成方法
JP4740666B2 (ja) 2004-07-07 2011-08-03 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
US8003293B2 (en) * 2004-09-30 2011-08-23 Intel Corporation Pixelated photoresists
JP2006124957A (ja) 2004-10-26 2006-05-18 Tenox Corp アンカー施工用掘削ビット及びそれを用いたアンカーの施工方法
KR100574993B1 (ko) * 2004-11-19 2006-05-02 삼성전자주식회사 포토레지스트용 탑 코팅 조성물과 이를 이용한포토레지스트 패턴 형성 방법
JP4152377B2 (ja) 2004-11-26 2008-09-17 Ｎｅｃディスプレイソリューションズ株式会社 画質改善方法および画質改善装置
JP2006198897A (ja) 2005-01-20 2006-08-03 Nidec Copal Corp オーバコート装置
JP4667273B2 (ja) 2005-03-04 2011-04-06 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US20060252993A1 (en) * 2005-03-23 2006-11-09 Freed David I Medical devices and systems
EP1720072B1 (en) 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
US20070002296A1 (en) 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography defect reduction
US7927779B2 (en) 2005-06-30 2011-04-19 Taiwan Semiconductor Manufacturing Companym, Ltd. Water mark defect prevention for immersion lithography
US20070006405A1 (en) * 2005-07-07 2007-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for wafer cleaning
JP4861767B2 (ja) 2005-07-26 2012-01-25 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
US8383322B2 (en) * 2005-08-05 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography watermark reduction
JP4861781B2 (ja) 2005-09-13 2012-01-25 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7993808B2 (en) 2005-09-30 2011-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. TARC material for immersion watermark reduction
JP5114022B2 (ja) 2006-01-23 2013-01-09 富士フイルム株式会社 パターン形成方法
DE102006000399A1 (de) * 2006-08-10 2008-02-14 Novineon Healthcare Technology Partners Gmbh Medizinisches Instrument
US8518628B2 (en) 2006-09-22 2013-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Surface switchable photoresist
US7780648B2 (en) * 2007-12-28 2010-08-24 Boston Scientific Scimed, Inc. Controlling movement of distal portion of medical device

Also Published As

Publication number Publication date
JP2007102220A (ja) 2007-04-19
US8597870B2 (en) 2013-12-03
US8202680B2 (en) 2012-06-19
FR2891631A1 (fr) 2007-04-06
DE102006046453A1 (de) 2007-04-12
US20110262871A1 (en) 2011-10-27
IL178317A0 (en) 2008-01-20
TW200712782A (en) 2007-04-01
IL178317A (en) 2013-03-24
FR2891631B1 (fr) 2013-11-22
NL1032579A1 (nl) 2007-04-02
CN1940721B (zh) 2011-05-25
CN1940722B (zh) 2011-09-14
US20070077517A1 (en) 2007-04-05
CN1940722A (zh) 2007-04-04
CN1940721A (zh) 2007-04-04
KR20070037308A (ko) 2007-04-04
US7993808B2 (en) 2011-08-09
US20120258400A1 (en) 2012-10-11
TWI341958B (en) 2011-05-11
DE102006046453B4 (de) 2022-03-10
NL1032579C2 (nl) 2008-03-28

Similar Documents

Publication Publication Date Title
SG131005A1 (en) Novel tarc material for immersion watermark reduction
TW200705113A (en) Exposure method, exposure apparatus, method for manufacturing device, and film evaluation method
TW200745769A (en) Photo apparatus and method
EP2413194A3 (en) Pattern forming method
TW200707125A (en) Immersion lithography and treatment method thereof
WO2012048108A3 (en) Radiation patternable cvd film
TW200641085A (en) Adhesive sheet for dicing and processing method of workpiece using the adhesive sheet
EP1918778A3 (en) Compositions and processes for immersion lithography
TW200732839A (en) Resist protective film material and pattern formation method
TW200710580A (en) Resist underlayer coating forming composition for forming photocrosslinking curable resist underlayer coating
TW200704739A (en) Photosensitive adhesive composition, and obtained using the same, adhesive film, adhesive sheet, semiconductor wafer with adhesive layer, semiconductor device and electronic part
TW201612645A (en) Chemically amplified positive resist material and pattern forming method
TW200511388A (en) Exposure method, substrate stage, exposure apparatus and method for manufacturing device
TW200616042A (en) Reticle maintaining device, reticle moving device, exposure device, and moving method for reticle
MY143937A (en) A process of imaging a photoresist with multiple antireflective coatings
WO2008111287A1 (ja) アクリル系粘着テープ又はシート、およびその製造方法
EP1975719A3 (en) Method of forming resist pattern and semiconductor device manufactured with the same
TW200606179A (en) Material for forming resist protection film for liquid immersion lithography and method for forming resist pattern by using the protection film
TW200735700A (en) Process for producing organic el, color filter and diaphragm
ATE496977T1 (de) Deckschichtzusammensetzung, alkali- entwicklerlösliche deckschichtfolie mit der zusammensetzung und musterbildungsverfahren mit hilfe damit
WO2007121456A3 (en) Wet developable bottom antireflective coating composition and method for use thereof
WO2008028968A3 (en) Compounds regulating calreticulin, kdel receptor and/or erp-57 cell surface exposure and uses thereof to evaluate the efficiency of a cancer treatment
TW200728910A (en) Radiation sensitive resin composition, interlayer-insulated film, microlens, and the method for forming them
EP2319892A4 (en) PHOTOSENSITIVE ADHESIVE COMPOSITION, PHOTOSENSITIVE FILM ADHESIVE, ADHESIVE PATTERN, SEMICONDUCTOR WAFER WITH ADHESIVE, SEMICONDUCTOR DEVICE, AND ELECTRONIC COMPONENT
WO2006028507A3 (en) Adaptive metal films for detection of biomolecules