SG129398A1 - Semiconductor wafer and process for producing a semiconductor wafer - Google Patents

Semiconductor wafer and process for producing a semiconductor wafer

Info

Publication number
SG129398A1
SG129398A1 SG200604779A SG200604779A SG129398A1 SG 129398 A1 SG129398 A1 SG 129398A1 SG 200604779 A SG200604779 A SG 200604779A SG 200604779 A SG200604779 A SG 200604779A SG 129398 A1 SG129398 A1 SG 129398A1
Authority
SG
Singapore
Prior art keywords
semiconductor wafer
producing
wafer
semiconductor
Prior art date
Application number
SG200604779A
Other languages
English (en)
Inventor
Rudolf Rupp
Werner Aigner
Friedrich Dr Passek
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG129398A1 publication Critical patent/SG129398A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
SG200604779A 2005-07-21 2006-07-17 Semiconductor wafer and process for producing a semiconductor wafer SG129398A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005034120A DE102005034120B4 (de) 2005-07-21 2005-07-21 Verfahren zur Herstellung einer Halbleiterscheibe

Publications (1)

Publication Number Publication Date
SG129398A1 true SG129398A1 (en) 2007-02-26

Family

ID=37650122

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200604779A SG129398A1 (en) 2005-07-21 2006-07-17 Semiconductor wafer and process for producing a semiconductor wafer

Country Status (7)

Country Link
US (1) US7387963B2 (ko)
JP (1) JP4996888B2 (ko)
KR (1) KR100861101B1 (ko)
CN (1) CN100490126C (ko)
DE (1) DE102005034120B4 (ko)
SG (1) SG129398A1 (ko)
TW (1) TWI332238B (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006037267B4 (de) * 2006-08-09 2010-12-09 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben mit hochpräzisem Kantenprofil
JP5569392B2 (ja) * 2008-09-29 2014-08-13 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
DE102009011622B4 (de) * 2009-03-04 2018-10-25 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung einer epitaxierten Siliciumscheibe
DE102009038941B4 (de) * 2009-08-26 2013-03-21 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
DE102010014874A1 (de) * 2010-04-14 2011-10-20 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
CN102172861A (zh) * 2010-12-31 2011-09-07 苏州普锐晶科技有限公司 一种小型频率片的高速倒边加工方法
KR101233216B1 (ko) * 2011-09-27 2013-02-15 엘지전자 주식회사 태양전지용 웨이퍼 및 이의 제조방법
US20150017745A1 (en) * 2013-07-08 2015-01-15 Ebara Corporation Polishing method and polishing apparatus
CN103560105A (zh) * 2013-11-22 2014-02-05 上海新傲科技股份有限公司 边缘光滑的半导体衬底的制备方法
CN103847032B (zh) * 2014-03-20 2016-01-06 德清晶辉光电科技有限公司 一种大直径超薄石英晶片的生产工艺
TW201838765A (zh) * 2017-04-19 2018-11-01 頂瑞機械股份有限公司 具自動檢測之機械加工裝置
CN108818161B (zh) * 2018-07-24 2020-08-04 上海新昇半导体科技有限公司 硅片的返工系统及方法
CN109623554A (zh) * 2019-01-08 2019-04-16 天津中环领先材料技术有限公司 一种降低硅片边缘粗糙度的边抛工艺
CN110712071A (zh) * 2019-08-27 2020-01-21 浙江博蓝特半导体科技股份有限公司 一种蓝宝石单面抛光厚度不良返抛方法及返抛装置
CN111037370B (zh) * 2019-11-29 2021-04-27 上海磐盟电子材料有限公司 一种圆晶倒角工艺
CN111430223B (zh) * 2020-05-15 2023-06-23 中国科学院微电子研究所 一种预清洗装置
CN114800222B (zh) * 2022-05-13 2023-09-26 中锗科技有限公司 一种锗晶片双面抛光的方法

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05291222A (ja) * 1992-04-10 1993-11-05 Nippon Steel Corp リンス方法および装置
JP2513426B2 (ja) * 1993-09-20 1996-07-03 日本電気株式会社 ウェ―ハ研磨装置
JPH1050640A (ja) * 1996-05-10 1998-02-20 Canon Inc 精密研磨装置およびこれを用いた半導体デバイスの製造方法
DE19732433A1 (de) 1996-07-29 1998-02-12 Mitsubishi Material Silicon Verfahren und Gerät zum Polieren von Schrägkanten von Halbleiterwafern
JP3055471B2 (ja) * 1996-10-03 2000-06-26 日本電気株式会社 半導体基板の製造方法及びその製造装置
JP3994523B2 (ja) * 1998-05-18 2007-10-24 信越半導体株式会社 シリコンウエーハ鏡面面取り部の検査方法
JP2000084811A (ja) * 1998-09-16 2000-03-28 Tokyo Seimitsu Co Ltd ウェーハ面取り装置
JP2000114329A (ja) * 1998-09-29 2000-04-21 Yuhi Denshi Kk 基板端部の研削面の検査方法とその装置
JP3041785B1 (ja) * 1998-12-28 2000-05-15 東亞合成株式会社 ガス拡散電極の排電方法
EP1001460B1 (en) * 1998-10-15 2001-05-02 Wacker Siltronic Gesellschaft für Halbleitermaterialien Aktiengesellschaft Method and apparatus for detecting, monitoring and characterizing edge defects on semiconductor wafers
DE19905737C2 (de) * 1999-02-11 2000-12-14 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit verbesserter Ebenheit
JP4778130B2 (ja) 1999-06-17 2011-09-21 スピードファム株式会社 エッジポリッシング装置及びエッジポリッシング方法
DE19949578C2 (de) * 1999-10-14 2003-04-30 Wacker Siltronic Halbleitermat Verfahren zur Kontrolle einer Oberflächenbearbeitung
DE19956250C1 (de) * 1999-11-23 2001-05-17 Wacker Siltronic Halbleitermat Kostengünstiges Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben
DE10004578C1 (de) * 2000-02-03 2001-07-26 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante
DE10012840C2 (de) * 2000-03-16 2001-08-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Vielzahl von polierten Halbleiterscheiben
WO2001082353A1 (fr) * 2000-04-24 2001-11-01 Shin-Etsu Handotai Co., Ltd. Dispositif et procede de polissage du chanfrein peripherique d'une tranche de silicium
US6962521B2 (en) * 2000-07-10 2005-11-08 Shin-Etsu Handotai Co., Ltd. Edge polished wafer, polishing cloth for edge polishing, and apparatus and method for edge polishing
JP2002076082A (ja) * 2000-08-31 2002-03-15 Shin Etsu Handotai Co Ltd シリコンウエーハの検査方法及び製造方法、半導体デバイスの製造方法及びシリコンウエーハ
JP2003177100A (ja) * 2001-12-12 2003-06-27 Sumitomo Mitsubishi Silicon Corp 鏡面面取りウェーハの品質評価方法
DE10212657A1 (de) * 2002-03-21 2002-10-17 Wacker Siltronic Halbleitermat Verfahren zur Reinigung einer Siliciumscheibe nach der Politur
JP3936220B2 (ja) 2002-03-28 2007-06-27 株式会社レイテックス 端部傷検査装置
JP2004079587A (ja) * 2002-08-09 2004-03-11 Reitetsukusu:Kk ウエハ回転装置とこれを有する端部傷検査装置
JP2004153053A (ja) * 2002-10-31 2004-05-27 Trecenti Technologies Inc 半導体集積回路装置の製造方法
JP3534115B1 (ja) * 2003-04-02 2004-06-07 住友電気工業株式会社 エッジ研磨した窒化物半導体基板とエッジ研磨したＧａＮ自立基板及び窒化物半導体基板のエッジ加工方法
JP2007501942A (ja) 2003-05-19 2007-02-01 マイクロ−エプシロン・メステヒニク・ゲーエムベーハー・ウント・コンパニー・カー・ゲー 好適に円形エッジを有する物体の品質を光学的に制御する光学的試験方法及び光学的試験装置
DE10352936A1 (de) * 2003-05-19 2004-12-30 Micro-Epsilon Messtechnik Gmbh & Co Kg Verfahren und Vorrichtung zur optischen Qualitätsprüfung von Objekten mit vorzugsweise kreisförmig umlaufendem Rand
JP4507157B2 (ja) * 2003-06-17 2010-07-21 信越半導体株式会社 ウエーハ製造工程の管理方法
JP2005135936A (ja) * 2003-10-28 2005-05-26 Mimasu Semiconductor Industry Co Ltd ウエーハの面取り加工方法及びウエーハ

Also Published As

Publication number Publication date
KR20070012229A (ko) 2007-01-25
KR100861101B1 (ko) 2008-09-30
CN1901172A (zh) 2007-01-24
US7387963B2 (en) 2008-06-17
DE102005034120B4 (de) 2013-02-07
CN100490126C (zh) 2009-05-20
JP4996888B2 (ja) 2012-08-08
JP2007036231A (ja) 2007-02-08
US20070017900A1 (en) 2007-01-25
TWI332238B (en) 2010-10-21
TW200705563A (en) 2007-02-01
DE102005034120A1 (de) 2007-02-01

Similar Documents

Publication Publication Date Title
SG129398A1 (en) Semiconductor wafer and process for producing a semiconductor wafer
TWI346356B (en) Process for producing silicon wafer
TWI318439B (en) Method for manufacturing semiconductor device
EP1909315A4 (en) SILICON PLATE AND METHOD FOR PRODUCING SAME
EP1780781A4 (en) PROCESS FOR PRODUCING SILICON DISK AND SILICON DISC PRODUCED THEREBY
TWI366218B (en) Method for manufacturing semiconductor device
EP1811548A4 (en) SEMICONDUCTOR WAFER MANUFACTURING METHOD
TWI316284B (en) Semiconductor device, fabrication methods thereof and methods for forming a tungsten-containing layer
TWI371778B (en) Process for forming resist pattern, semiconductor device and manufacturing method for the same
EP1921674A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP1930486A4 (en) METHOD FOR PRODUCING A SEMICONDUCTOR SUBSTRATE
EP1788620A4 (en) PROCESS FOR PRODUCING SILICON PLATE
EP2068355A4 (en) VERBUND SEMICONDUCTOR ARRANGEMENT AND PROCESS FOR THEIR MANUFACTURE
EP1983559A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME
EP1981063A4 (en) PROCESS FOR PRODUCTION OF SOI SLICES AND SLICES SO PRODUCED
EP1887624A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
HK1101220A1 (en) Method for manufacturing nitride semiconductor substrate
TWI318008B (en) Method of manufacturing semiconductor device
HK1095207A1 (en) Process for fabricating semiconductor device
EP1953808A4 (en) PROCESS FOR PRODUCING EPITAXIAL WAFER AND EPITAXIAL WAFER
EP1955813A4 (en) PROCESS FOR PRODUCING SILICON WAFER
EP1801854A4 (en) METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER
PL1801269T3 (pl) Sposób wytwarzania wolno stojącej warstwy III-N i wolno stojące podłoże III-N
EP1922749A4 (en) METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
TWI347379B (en) Silicon wafer and method for producing same