PL1801269T3 - Sposób wytwarzania wolno stojącej warstwy III-N i wolno stojące podłoże III-N - Google Patents
Sposób wytwarzania wolno stojącej warstwy III-N i wolno stojące podłoże III-NInfo
- Publication number
- PL1801269T3 PL1801269T3 PL06024629T PL06024629T PL1801269T3 PL 1801269 T3 PL1801269 T3 PL 1801269T3 PL 06024629 T PL06024629 T PL 06024629T PL 06024629 T PL06024629 T PL 06024629T PL 1801269 T3 PL1801269 T3 PL 1801269T3
- Authority
- PL
- Poland
- Prior art keywords
- free
- standing iii
- producing
- substrate
- layer
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02634—Homoepitaxy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75204905P | 2005-12-21 | 2005-12-21 | |
EP06024629A EP1801269B1 (en) | 2005-12-21 | 2006-11-28 | Process for producing a free-standing III-N layer, and free-standing III-N substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
PL1801269T3 true PL1801269T3 (pl) | 2012-03-30 |
Family
ID=37735107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL06024629T PL1801269T3 (pl) | 2005-12-21 | 2006-11-28 | Sposób wytwarzania wolno stojącej warstwy III-N i wolno stojące podłoże III-N |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070141814A1 (pl) |
EP (1) | EP1801269B1 (pl) |
JP (1) | JP2007204359A (pl) |
CN (1) | CN1988109B (pl) |
PL (1) | PL1801269T3 (pl) |
TW (1) | TW200801254A (pl) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4756418B2 (ja) * | 2006-02-28 | 2011-08-24 | 公立大学法人大阪府立大学 | 単結晶窒化ガリウム基板の製造方法 |
KR100714629B1 (ko) * | 2006-03-17 | 2007-05-07 | 삼성전기주식회사 | 질화물 반도체 단결정 기판, 그 제조방법 및 이를 이용한수직구조 질화물 발광소자 제조방법 |
US9224817B2 (en) * | 2006-04-07 | 2015-12-29 | Sixpoint Materials, Inc. | Composite substrate of gallium nitride and metal oxide |
WO2007145873A2 (en) * | 2006-06-05 | 2007-12-21 | Cohen Philip I | Growth of low dislocation density group-iii nitrides and related thin-film structures |
TWI411125B (zh) * | 2008-03-05 | 2013-10-01 | Advanced Optoelectronic Tech | 三族氮化合物半導體發光元件之製造方法及其結構 |
TW201003981A (en) * | 2008-07-14 | 2010-01-16 | Advanced Optoelectronic Tech | Substrate structure and method of removing the substrate structure |
EP2815421B1 (de) | 2012-03-21 | 2018-01-31 | Freiberger Compound Materials GmbH | Verfahren zur herstellung von iii-n-templaten und deren weiterverarbeitung, und iii-n-template |
DE102012204551A1 (de) * | 2012-03-21 | 2013-09-26 | Freiberger Compound Materials Gmbh | Verfahren zur Herstellung von III-N-Einkristallen, und III-N-Einkristall |
US8796054B2 (en) | 2012-05-31 | 2014-08-05 | Corning Incorporated | Gallium nitride to silicon direct wafer bonding |
CN102817074B (zh) * | 2012-07-23 | 2015-09-30 | 北京燕园中镓半导体工程研发中心有限公司 | 基于原位应力控制的iii族氮化物厚膜自分离方法 |
CN104952972B (zh) * | 2015-04-14 | 2017-01-25 | 上海大学 | 自支撑CdZnTe薄膜的制备方法 |
US10364510B2 (en) * | 2015-11-25 | 2019-07-30 | Sciocs Company Limited | Substrate for crystal growth having a plurality of group III nitride seed crystals arranged in a disc shape |
CN112967948B (zh) * | 2020-08-05 | 2022-05-20 | 重庆康佳光电技术研究院有限公司 | 金属镓去除装置及金属镓去除方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW428331B (en) * | 1998-05-28 | 2001-04-01 | Sumitomo Electric Industries | Gallium nitride single crystal substrate and method of producing the same |
WO1999066565A1 (en) * | 1998-06-18 | 1999-12-23 | University Of Florida | Method and apparatus for producing group-iii nitrides |
DE10042947A1 (de) * | 2000-08-31 | 2002-03-21 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis |
US6498113B1 (en) * | 2001-06-04 | 2002-12-24 | Cbl Technologies, Inc. | Free standing substrates by laser-induced decoherency and regrowth |
US6648966B2 (en) * | 2001-08-01 | 2003-11-18 | Crystal Photonics, Incorporated | Wafer produced thereby, and associated methods and devices using the wafer |
JP4035971B2 (ja) * | 2001-09-03 | 2008-01-23 | 豊田合成株式会社 | 半導体結晶の製造方法 |
JP2006521984A (ja) * | 2003-03-18 | 2006-09-28 | クリスタル フォトニクス,インコーポレイテッド | Iii族の窒化物装置を製作する方法およびそのように製作された装置 |
JP4727169B2 (ja) * | 2003-08-04 | 2011-07-20 | 日本碍子株式会社 | エピタキシャル基板、当該エピタキシャル基板の製造方法、当該エピタキシャル基板の反り抑制方法、および当該エピタキシャル基板を用いた半導体積層構造 |
US7112495B2 (en) * | 2003-08-15 | 2006-09-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit |
FR2860248B1 (fr) * | 2003-09-26 | 2006-02-17 | Centre Nat Rech Scient | Procede de realisation de substrats autosupportes de nitrures d'elements iii par hetero-epitaxie sur une couche sacrificielle |
US7115955B2 (en) * | 2004-07-30 | 2006-10-03 | International Business Machines Corporation | Semiconductor device having a strained raised source/drain |
US7169659B2 (en) * | 2004-08-31 | 2007-01-30 | Texas Instruments Incorporated | Method to selectively recess ETCH regions on a wafer surface using capoly as a mask |
US20060289891A1 (en) * | 2005-06-28 | 2006-12-28 | Hutchins Edward L | Electronic and/or optoelectronic devices grown on free-standing GaN substrates with GaN spacer structures |
-
2006
- 2006-11-24 CN CN2006101628418A patent/CN1988109B/zh active Active
- 2006-11-28 EP EP06024629A patent/EP1801269B1/en active Active
- 2006-11-28 PL PL06024629T patent/PL1801269T3/pl unknown
- 2006-12-15 TW TW095146966A patent/TW200801254A/zh unknown
- 2006-12-20 US US11/613,609 patent/US20070141814A1/en not_active Abandoned
- 2006-12-21 JP JP2006344892A patent/JP2007204359A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
CN1988109A (zh) | 2007-06-27 |
EP1801269A1 (en) | 2007-06-27 |
EP1801269B1 (en) | 2011-10-05 |
US20070141814A1 (en) | 2007-06-21 |
TW200801254A (en) | 2008-01-01 |
JP2007204359A (ja) | 2007-08-16 |
CN1988109B (zh) | 2012-03-21 |
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