SG125109A1 - Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography - Google Patents

Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography

Info

Publication number
SG125109A1
SG125109A1 SG200401175A SG200401175A SG125109A1 SG 125109 A1 SG125109 A1 SG 125109A1 SG 200401175 A SG200401175 A SG 200401175A SG 200401175 A SG200401175 A SG 200401175A SG 125109 A1 SG125109 A1 SG 125109A1
Authority
SG
Singapore
Prior art keywords
features
interference
areas
reticle pattern
deep sub
Prior art date
Application number
SG200401175A
Other languages
English (en)
Inventor
Van Den Douglas Broeke
Jang Fung Chen
Thomas Laidig
Kurt E Wampler
Duan-Fu Stephen Hsu
Original Assignee
Asml Masktools Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Masktools Bv filed Critical Asml Masktools Bv
Publication of SG125109A1 publication Critical patent/SG125109A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG200401175A 2003-01-14 2004-01-14 Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography SG125109A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US43980703P 2003-01-14 2003-01-14

Publications (1)

Publication Number Publication Date
SG125109A1 true SG125109A1 (en) 2006-09-29

Family

ID=32595350

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200401175A SG125109A1 (en) 2003-01-14 2004-01-14 Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography

Country Status (8)

Country Link
US (2) US7247574B2 (de)
EP (1) EP1439419B1 (de)
JP (1) JP4101770B2 (de)
KR (1) KR100792808B1 (de)
CN (1) CN100468196C (de)
DE (1) DE602004002598T2 (de)
SG (1) SG125109A1 (de)
TW (1) TWI290262B (de)

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Also Published As

Publication number Publication date
TW200500791A (en) 2005-01-01
DE602004002598D1 (de) 2006-11-16
EP1439419A3 (de) 2005-01-05
US20070162889A1 (en) 2007-07-12
KR100792808B1 (ko) 2008-01-14
US7247574B2 (en) 2007-07-24
EP1439419B1 (de) 2006-10-04
EP1439419A2 (de) 2004-07-21
TWI290262B (en) 2007-11-21
JP2004220034A (ja) 2004-08-05
KR20040065188A (ko) 2004-07-21
JP4101770B2 (ja) 2008-06-18
DE602004002598T2 (de) 2007-10-18
CN1550900A (zh) 2004-12-01
US20040209170A1 (en) 2004-10-21
CN100468196C (zh) 2009-03-11
US7774736B2 (en) 2010-08-10

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