DE602004002598D1 - Methode und Gerät zur Erstellung von optischen Näherungseffekt-Korrekturelementen für ein Maskenmuster in der Optischen Lithographie - Google Patents

Methode und Gerät zur Erstellung von optischen Näherungseffekt-Korrekturelementen für ein Maskenmuster in der Optischen Lithographie

Info

Publication number
DE602004002598D1
DE602004002598D1 DE602004002598T DE602004002598T DE602004002598D1 DE 602004002598 D1 DE602004002598 D1 DE 602004002598D1 DE 602004002598 T DE602004002598 T DE 602004002598T DE 602004002598 T DE602004002598 T DE 602004002598T DE 602004002598 D1 DE602004002598 D1 DE 602004002598D1
Authority
DE
Germany
Prior art keywords
mask pattern
proximity effect
effect correction
correction elements
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602004002598T
Other languages
English (en)
Other versions
DE602004002598T2 (de
Inventor
Den Broeke Douglas Van
Jang Fung Chen
Thomas Laidig
Kurt E Wampler
Duan-Fu Stephen Hsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML MaskTools Netherlands BV
Original Assignee
ASML MaskTools Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML MaskTools Netherlands BV filed Critical ASML MaskTools Netherlands BV
Publication of DE602004002598D1 publication Critical patent/DE602004002598D1/de
Application granted granted Critical
Publication of DE602004002598T2 publication Critical patent/DE602004002598T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE602004002598T 2003-01-14 2004-01-14 Methode und Gerät zur Erstellung von optischen Näherungseffekt-Korrekturelementen für ein Maskenmuster in der optischen Lithographie Expired - Fee Related DE602004002598T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43980703P 2003-01-14 2003-01-14
US439807P 2003-01-14

Publications (2)

Publication Number Publication Date
DE602004002598D1 true DE602004002598D1 (de) 2006-11-16
DE602004002598T2 DE602004002598T2 (de) 2007-10-18

Family

ID=32595350

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004002598T Expired - Fee Related DE602004002598T2 (de) 2003-01-14 2004-01-14 Methode und Gerät zur Erstellung von optischen Näherungseffekt-Korrekturelementen für ein Maskenmuster in der optischen Lithographie

Country Status (8)

Country Link
US (2) US7247574B2 (de)
EP (1) EP1439419B1 (de)
JP (1) JP4101770B2 (de)
KR (1) KR100792808B1 (de)
CN (1) CN100468196C (de)
DE (1) DE602004002598T2 (de)
SG (1) SG125109A1 (de)
TW (1) TWI290262B (de)

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Also Published As

Publication number Publication date
US20070162889A1 (en) 2007-07-12
EP1439419A3 (de) 2005-01-05
US7247574B2 (en) 2007-07-24
US7774736B2 (en) 2010-08-10
CN100468196C (zh) 2009-03-11
JP4101770B2 (ja) 2008-06-18
TWI290262B (en) 2007-11-21
EP1439419B1 (de) 2006-10-04
KR20040065188A (ko) 2004-07-21
JP2004220034A (ja) 2004-08-05
DE602004002598T2 (de) 2007-10-18
SG125109A1 (en) 2006-09-29
US20040209170A1 (en) 2004-10-21
KR100792808B1 (ko) 2008-01-14
CN1550900A (zh) 2004-12-01
EP1439419A2 (de) 2004-07-21
TW200500791A (en) 2005-01-01

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