SG124407A1 - Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus - Google Patents

Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus

Info

Publication number
SG124407A1
SG124407A1 SG200600565A SG200600565A SG124407A1 SG 124407 A1 SG124407 A1 SG 124407A1 SG 200600565 A SG200600565 A SG 200600565A SG 200600565 A SG200600565 A SG 200600565A SG 124407 A1 SG124407 A1 SG 124407A1
Authority
SG
Singapore
Prior art keywords
features
substrate
target image
patterning device
proximate
Prior art date
Application number
SG200600565A
Other languages
English (en)
Inventor
Uwe Mickan
Hendricus Johannes Mari Meijer
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG124407A1 publication Critical patent/SG124407A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24Reflection masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70283Mask effects on the imaging process
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70653Metrology techniques
    • G03F7/70666Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/706843Metrology apparatus
    • G03F7/706845Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073Alignment marks and their environment
    • G03F9/7076Mark details, e.g. phase grating mark, temporary mark
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Multimedia (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG200600565A 2005-02-03 2006-01-26 Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus SG124407A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US64907905P 2005-02-03 2005-02-03

Publications (1)

Publication Number Publication Date
SG124407A1 true SG124407A1 (en) 2006-08-30

Family

ID=36274132

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200600565A SG124407A1 (en) 2005-02-03 2006-01-26 Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus

Country Status (7)

Country Link
US (1) US7960074B2 (de)
EP (1) EP1688794A3 (de)
JP (1) JP4566137B2 (de)
KR (2) KR100795504B1 (de)
CN (1) CN100582947C (de)
SG (1) SG124407A1 (de)
TW (1) TWI348076B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1962138B1 (de) 2007-02-23 2011-12-14 Imec Systeme und Verfahren zur UV-Lithographie
US8230369B2 (en) 2008-02-27 2012-07-24 Kabushiki Kaisha Toshiba Simulation method and simulation program
JP2009204823A (ja) * 2008-02-27 2009-09-10 Toshiba Corp シミュレーション方法及びシミュレーション用のプログラム
US8279401B2 (en) * 2008-04-25 2012-10-02 Asml Netherlands B.V. Position control system, a lithographic apparatus and a method for controlling a position of a movable object
US8139231B2 (en) * 2008-05-01 2012-03-20 Cognex Corporation Machine vision technique for manufacturing semiconductor wafers
US8189194B2 (en) * 2008-09-12 2012-05-29 Cognex Corporation Direct illumination machine vision technique for processing semiconductor wafers
US8570516B2 (en) * 2008-09-12 2013-10-29 Cognex Corporation Infrared direct illumination machine vision technique for semiconductor processing equipment
NL2004735A (en) 2009-07-06 2011-01-10 Asml Netherlands Bv Imprint lithography apparatus and method.
KR101926423B1 (ko) * 2010-02-26 2018-12-07 마이크로닉 아베 패턴 정렬을 수행하기 위한 방법 및 장치
NL2006454A (en) * 2010-05-03 2011-11-07 Asml Netherlands Bv Imprint lithography method and apparatus.
CN102331687B (zh) * 2011-10-21 2013-07-17 苏州大学 一种步进式光学加工系统和加工方法
JP2013115304A (ja) * 2011-11-30 2013-06-10 Nuflare Technology Inc 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
CN102654734B (zh) * 2012-04-06 2014-06-04 北京理工大学 双吸收层交替相移l/s掩模锥形衍射场的计算方法
JP2015518659A (ja) * 2012-04-19 2015-07-02 エーエスエムエル ネザーランズ ビー.ブイ. 基板ホルダ、リソグラフィ装置及びデバイス製造方法
WO2015007511A1 (en) 2013-07-19 2015-01-22 Asml Netherlands B.V. Determination and application of non-monotonic dose sensitivity
CN104749901B (zh) * 2013-12-31 2017-08-29 上海微电子装备有限公司 一种调焦调平装置
KR102246876B1 (ko) * 2014-10-22 2021-04-30 삼성전자 주식회사 극자외선 리소그래피 장치용 반사형 마스크 및 그 제조방법
US9841299B2 (en) 2014-11-28 2017-12-12 Canon Kabushiki Kaisha Position determining device, position determining method, lithographic apparatus, and method for manufacturing object
JP6590599B2 (ja) * 2014-11-28 2019-10-16 キヤノン株式会社 位置決定装置、位置決定方法、リソグラフィ装置、および物品の製造方法
CN113050388A (zh) * 2015-04-10 2021-06-29 Asml荷兰有限公司 用于检测及量测的方法与装置
US10185800B2 (en) * 2016-06-27 2019-01-22 Kla-Tencor Corporation Apparatus and method for the measurement of pattern placement and size of pattern and computer program therefor
US11035980B2 (en) * 2018-07-24 2021-06-15 Faro Technologies, Inc. Laser scanner with projector
JP7320832B2 (ja) 2019-08-08 2023-08-04 株式会社日本アレフ 固定構造

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4329410A (en) 1979-12-26 1982-05-11 The Perkin-Elmer Corporation Production of X-ray lithograph masks
JP2545905B2 (ja) * 1987-12-29 1996-10-23 キヤノン株式会社 反射型マスクならびにこれを用いた露光方法
JPH06120125A (ja) * 1991-11-12 1994-04-28 Hitachi Ltd 光学素子およびそれを用いた投影露光装置
JPH0766111A (ja) * 1993-08-31 1995-03-10 Canon Inc 露光装置および露光方法
DE69817491T2 (de) * 1997-03-07 2004-06-17 Asml Netherlands B.V. Lithographisches belichtungsgerät mit einer ausserhalb der belichtungsachse liegenden ausrichtungsvorrichtung
NL1008352C2 (nl) 1998-02-19 1999-08-20 Stichting Tech Wetenschapp Inrichting, geschikt voor extreem ultraviolet lithografie, omvattende een stralingsbron en een verwerkingsorgaan voor het verwerken van de van de stralingsbron afkomstige straling, alsmede een filter voor het onderdrukken van ongewenste atomaire en microscopische deeltjes welke door een stralingsbron zijn uitgezonden.
AU2549899A (en) 1998-03-02 1999-09-20 Nikon Corporation Method and apparatus for exposure, method of manufacture of exposure tool, device, and method of manufacture of device
JP3770542B2 (ja) * 1999-07-22 2006-04-26 コーニング インコーポレイテッド 遠紫外軟x線投影リソグラフィー法およびマスク装置
US6387572B1 (en) * 1999-09-13 2002-05-14 Intel Corporation Low CTE substrate for reflective EUV lithography
US6614505B2 (en) 2001-01-10 2003-09-02 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method, and device manufactured thereby
JP4390418B2 (ja) * 2001-02-14 2009-12-24 Hoya株式会社 Euv露光用反射型マスクブランクおよびeuv露光用反射型マスク並びに半導体の製造方法
US6879374B2 (en) * 2001-06-20 2005-04-12 Asml Netherlands B.V. Device manufacturing method, device manufactured thereby and a mask for use in the method
DE10134231B4 (de) 2001-07-13 2006-06-14 Infineon Technologies Ag EUV-Reflektionsmaske
US6607862B2 (en) * 2001-08-24 2003-08-19 Intel Corporation Damascene extreme ultraviolet lithography alternative phase shift photomask and method of making
JP3989367B2 (ja) 2002-02-22 2007-10-10 Hoya株式会社 露光用反射型マスクブランク、その製造方法及び露光用反射型マスク
JP4100038B2 (ja) * 2002-05-10 2008-06-11 ソニー株式会社 露光方法および露光装置
US7129010B2 (en) * 2002-08-02 2006-10-31 Schott Ag Substrates for in particular microlithography
US7042550B2 (en) * 2002-11-28 2006-05-09 Asml Netherlands B.V. Device manufacturing method and computer program
EP1434099B1 (de) * 2002-11-28 2008-07-02 ASML Netherlands B.V. Verfahren zur Herstellung einer Vorrichtung
JP2004186613A (ja) * 2002-12-06 2004-07-02 Nikon Corp Euv露光方法、マスク及び半導体装置の製造方法
DE10302342A1 (de) * 2003-01-17 2004-08-05 Schott Glas Substrat für die EUV-Mikrolithographie und Herstellverfahren hierfür
JP3910546B2 (ja) * 2003-02-21 2007-04-25 株式会社東芝 リソグラフィシミュレーション方法、マスクパターン補正方法及び処理基板形状補正方法
US6806007B1 (en) * 2003-05-02 2004-10-19 Advanced Micro Devices, Inc. EUV mask which facilitates electro-static chucking
JP2005340493A (ja) * 2004-05-27 2005-12-08 Sony Corp マスクパターン補正方法、露光用マスクおよびマスク製造方法
US7094507B2 (en) * 2004-10-29 2006-08-22 Infineon Technologies Ag Method for determining an optimal absorber stack geometry of a lithographic reflection mask

Also Published As

Publication number Publication date
JP4566137B2 (ja) 2010-10-20
KR100795504B1 (ko) 2008-01-16
EP1688794A3 (de) 2007-01-10
KR100886741B1 (ko) 2009-03-04
TWI348076B (en) 2011-09-01
US7960074B2 (en) 2011-06-14
CN1904737A (zh) 2007-01-31
KR20070058411A (ko) 2007-06-08
JP2006259699A (ja) 2006-09-28
KR20060089153A (ko) 2006-08-08
US20060194123A1 (en) 2006-08-31
CN100582947C (zh) 2010-01-20
EP1688794A2 (de) 2006-08-09
TW200632589A (en) 2006-09-16

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