SG118387A1 - Method and apparatus for a semiconductor device with a high-k gate - Google Patents

Method and apparatus for a semiconductor device with a high-k gate

Info

Publication number
SG118387A1
SG118387A1 SG200503923A SG200503923A SG118387A1 SG 118387 A1 SG118387 A1 SG 118387A1 SG 200503923 A SG200503923 A SG 200503923A SG 200503923 A SG200503923 A SG 200503923A SG 118387 A1 SG118387 A1 SG 118387A1
Authority
SG
Singapore
Prior art keywords
gate
semiconductor device
semiconductor
Prior art date
Application number
SG200503923A
Other languages
English (en)
Inventor
Chih-Hao Wang
Ching-Wei Tsai
Shang-Chih Chen
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG118387A1 publication Critical patent/SG118387A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823412—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823481—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SG200503923A 2004-06-23 2005-06-14 Method and apparatus for a semiconductor device with a high-k gate SG118387A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58209404P 2004-06-23 2004-06-23
US11/021,269 US7229893B2 (en) 2004-06-23 2004-12-23 Method and apparatus for a semiconductor device with a high-k gate dielectric

Publications (1)

Publication Number Publication Date
SG118387A1 true SG118387A1 (en) 2006-01-27

Family

ID=35924817

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200503923A SG118387A1 (en) 2004-06-23 2005-06-14 Method and apparatus for a semiconductor device with a high-k gate

Country Status (4)

Country Link
US (1) US7229893B2 (zh)
CN (1) CN100438073C (zh)
SG (1) SG118387A1 (zh)
TW (1) TWI283030B (zh)

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US7250351B2 (en) * 2005-04-14 2007-07-31 International Business Machines Corporation Enhanced silicon-on-insulator (SOI) transistors and methods of making enhanced SOI transistors
KR100678632B1 (ko) * 2005-06-23 2007-02-05 삼성전자주식회사 반도체 집적 회로 장치의 제조 방법
FR2890234A1 (fr) * 2005-08-29 2007-03-02 St Microelectronics Crolles 2 Procede de protection de la grille d'un transistor et circuit integre correspondant
JP2007095912A (ja) * 2005-09-28 2007-04-12 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US8501632B2 (en) * 2005-12-20 2013-08-06 Infineon Technologies Ag Methods of fabricating isolation regions of semiconductor devices and structures thereof
US7425497B2 (en) * 2006-01-20 2008-09-16 International Business Machines Corporation Introduction of metal impurity to change workfunction of conductive electrodes
US20070249133A1 (en) * 2006-04-11 2007-10-25 International Business Machines Corporation Conductive spacers for semiconductor devices and methods of forming
US7728387B1 (en) * 2006-06-13 2010-06-01 The Board Of Trustees Of The Leland Stanford Junior University Semiconductor device with high on current and low leakage
US8154051B2 (en) * 2006-08-29 2012-04-10 Taiwan Semiconductor Manufacturing Co., Ltd. MOS transistor with in-channel and laterally positioned stressors
KR100781874B1 (ko) * 2006-12-26 2007-12-05 주식회사 하이닉스반도체 반도체 소자의 제조방법
US7737015B2 (en) * 2007-02-27 2010-06-15 Texas Instruments Incorporated Formation of fully silicided gate with oxide barrier on the source/drain silicide regions
US7898027B2 (en) 2007-07-16 2011-03-01 United Microelectronics Corp. Metal-oxide-semiconductor device
US7588991B2 (en) * 2007-07-18 2009-09-15 United Microelectronics Corp. Method for fabricating embedded static random access memory
US7709331B2 (en) * 2007-09-07 2010-05-04 Freescale Semiconductor, Inc. Dual gate oxide device integration
US7625791B2 (en) * 2007-10-29 2009-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. High-k dielectric metal gate device structure and method for forming the same
JP5190250B2 (ja) * 2007-11-02 2013-04-24 パナソニック株式会社 半導体装置
DE102008011813B4 (de) * 2008-02-29 2010-03-04 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit einem Metallgatestapel mit reduzierter Höhe und Verfahren zur Herstellung des Bauelements
US20100102393A1 (en) * 2008-10-29 2010-04-29 Chartered Semiconductor Manufacturing, Ltd. Metal gate transistors
US8440547B2 (en) * 2009-02-09 2013-05-14 International Business Machines Corporation Method and structure for PMOS devices with high K metal gate integration and SiGe channel engineering
JP5503735B2 (ja) 2010-03-30 2014-05-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8729627B2 (en) 2010-05-14 2014-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Strained channel integrated circuit devices
US8592296B2 (en) * 2010-06-16 2013-11-26 International Business Machines Corporation Gate-last fabrication of quarter-gap MGHK FET
KR101186038B1 (ko) * 2010-11-26 2012-09-26 에스케이하이닉스 주식회사 반도체 소자의 제조 방법
US9269758B2 (en) * 2011-01-13 2016-02-23 Taiwan Semiconductor Manufacturing Company, Ltd. Low TCR high resistance resistor
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Also Published As

Publication number Publication date
CN100438073C (zh) 2008-11-26
TWI283030B (en) 2007-06-21
CN1725507A (zh) 2006-01-25
TW200601463A (en) 2006-01-01
US7229893B2 (en) 2007-06-12
US20050287759A1 (en) 2005-12-29

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