SG115497A1 - Domain controlled piezoelectric single crystal and fabrication method therefor - Google Patents

Domain controlled piezoelectric single crystal and fabrication method therefor

Info

Publication number
SG115497A1
SG115497A1 SG200205771A SG200205771A SG115497A1 SG 115497 A1 SG115497 A1 SG 115497A1 SG 200205771 A SG200205771 A SG 200205771A SG 200205771 A SG200205771 A SG 200205771A SG 115497 A1 SG115497 A1 SG 115497A1
Authority
SG
Singapore
Prior art keywords
single crystal
piezoelectric single
equal
crystal
cooling
Prior art date
Application number
SG200205771A
Other languages
English (en)
Inventor
Ogawa Toshio
Matsushita Mitsuyoshi
Tachi Yoshihito
Original Assignee
Ogawa Toshio
Kawatetsu Mining
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ogawa Toshio, Kawatetsu Mining filed Critical Ogawa Toshio
Publication of SG115497A1 publication Critical patent/SG115497A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead based oxides
SG200205771A 2002-03-25 2002-09-24 Domain controlled piezoelectric single crystal and fabrication method therefor SG115497A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002083702A JP3987744B2 (ja) 2002-03-25 2002-03-25 ドメイン制御圧電単結晶素子

Publications (1)

Publication Number Publication Date
SG115497A1 true SG115497A1 (en) 2005-10-28

Family

ID=27800407

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200205771A SG115497A1 (en) 2002-03-25 2002-09-24 Domain controlled piezoelectric single crystal and fabrication method therefor

Country Status (7)

Country Link
US (1) US6756238B2 (ja)
EP (2) EP1655789B1 (ja)
JP (1) JP3987744B2 (ja)
KR (2) KR100921301B1 (ja)
CN (1) CN100385701C (ja)
DE (2) DE60216039T2 (ja)
SG (1) SG115497A1 (ja)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE308119T1 (de) * 2002-02-01 2005-11-15 Siemens Ag Verfahren zum vorbehandeln einer piezoelektrischen keramik und verfahren zum justieren eines einspritzventils
JP4508725B2 (ja) * 2003-05-21 2010-07-21 Ｊｆｅミネラル株式会社 圧電単結晶素子とその製造方法
KR100628812B1 (ko) * 2003-05-21 2006-09-26 제이에프이 미네랄 가부시키가이샤 압전단결정 소자와 그 제조방법
JP4373777B2 (ja) * 2003-12-26 2009-11-25 敏夫 小川 圧電デバイス
JP4568529B2 (ja) * 2004-04-30 2010-10-27 Ｊｆｅミネラル株式会社 圧電単結晶素子
JP4613032B2 (ja) * 2004-05-06 2011-01-12 Ｊｆｅミネラル株式会社 圧電単結晶素子およびその製造方法
US7402938B2 (en) * 2004-10-29 2008-07-22 Jfe Mineral Co., Ltd. Piezoelectric single crystal device
JP5168439B2 (ja) * 2005-07-29 2013-03-21 セイコーエプソン株式会社 圧電素子、圧電アクチュエーター、インクジェット式記録ヘッド、およびインクジェットプリンター
WO2007023985A1 (ja) 2005-08-23 2007-03-01 Canon Kabushiki Kaisha 圧電体素子、それを用いた液体吐出ヘッド、および液体吐出装置
DE102005043037B4 (de) * 2005-09-09 2009-04-09 Siemens Ag Vorrichtung mit piezoakustischem Resonatorelement, Verfahren zu dessen Herstellung und Verfahren zur Ausgabe eines Signals in Abhängigkeit einer Resonanzfrequenz
JP5307986B2 (ja) * 2007-05-07 2013-10-02 富士フイルム株式会社 圧電素子とその製造方法、及び液体吐出装置
JP5065763B2 (ja) * 2007-05-18 2012-11-07 Ｊｆｅミネラル株式会社 圧電単結晶素子
US8818193B2 (en) * 2009-09-29 2014-08-26 Finisar Corporation Multichannel tunable optical dispersion compensator
WO2012021608A2 (en) 2010-08-10 2012-02-16 Trs Technologies, Inc. Temperature and field stable relaxor-pt piezoelectric single crystals
US8987976B2 (en) * 2011-09-23 2015-03-24 Qualcomm Incorporated Piezoelectric resonator having combined thickness and width vibrational modes
KR101305271B1 (ko) * 2012-03-22 2013-09-06 한국기계연구원 자기전기 복합체
JP6073600B2 (ja) * 2012-08-28 2017-02-01 東芝メディカルシステムズ株式会社 超音波プローブおよび圧電振動子
JP6091951B2 (ja) * 2013-03-25 2017-03-08 東芝メディカルシステムズ株式会社 圧電振動子、超音波プローブ、圧電振動子製造方法および超音波プローブ製造方法
CN103346253B (zh) * 2013-06-08 2015-01-21 西安交通大学 铁电单晶/环氧2-2结构及应力板加固的2-2结构复合材料
JP6398060B2 (ja) * 2013-12-27 2018-10-03 アドバンストマテリアルテクノロジーズ株式会社 熱ポーリング方法、圧電体膜の製造方法、及び圧電特性の検査方法
CN105256376B (zh) * 2015-11-18 2017-12-22 中国科学技术大学 一种控制铁电单晶电致形变取向的方法
CN107512910B (zh) * 2016-06-16 2019-11-26 中国科学院福建物质结构研究所 一种三元弛豫铁电压电材料铌镥酸铅-铌镍酸铅-钛酸铅及其制备方法和应用
US11039814B2 (en) 2016-12-04 2021-06-22 Exo Imaging, Inc. Imaging devices having piezoelectric transducers
CN109037432B (zh) * 2018-07-24 2022-05-13 歌尔微电子股份有限公司 压电元件变温极化装置及方法
US11971477B2 (en) 2018-09-25 2024-04-30 Exo Imaging, Inc. Imaging devices with selectively alterable characteristics
JP7406876B2 (ja) * 2018-10-17 2023-12-28 キヤノン株式会社 圧電トランス、および電子機器
JP7369504B2 (ja) * 2019-09-27 2023-10-26 テイカ株式会社 圧電単結晶素子の製造方法、超音波送受信素子の製造方法および超音波プローブの製造方法
EP3931636A4 (en) 2020-03-05 2023-02-22 Exo Imaging Inc. ULTRASOUND IMAGING DEVICE WITH PROGRAMMABLE ANATOMY AND FLOW IMAGING
CN111740005B (zh) * 2020-06-17 2022-05-24 上海新硅聚合半导体有限公司 一种压电薄膜高温极化方法
US11545615B2 (en) * 2020-09-09 2023-01-03 Baker Hughes Oilfield Operations Llc Method for manufacturing piezoelectric instrumentation devices with 3D structures using additive manufacturing

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3258111B2 (ja) 1992-02-12 2002-02-18 株式会社東芝 超音波送受信素子、超音波プローブおよび超音波治療装置用送波器
US5295487A (en) * 1992-02-12 1994-03-22 Kabushiki Kaisha Toshiba Ultrasonic probe
JPH07240546A (ja) * 1994-02-28 1995-09-12 Toyota Central Res & Dev Lab Inc 大変位用圧電セラミックスおよび圧電セラミックスの分極処理方法
JP2001106569A (ja) * 1995-10-09 2001-04-17 Ngk Insulators Ltd 電界誘起歪み材料
JP2001509312A (ja) * 1997-01-28 2001-07-10 ザ ペンステート リサーチファウンデーション 超音波変換器のためのリラクサー強誘電体単結晶
US6231779B1 (en) * 1997-10-20 2001-05-15 Massachusetts Institute Of Technology Piezoelectric actuators and method of making same
JP3345580B2 (ja) * 1998-03-05 2002-11-18 株式会社東芝 超音波プローブの製造方法
US6491889B2 (en) * 2000-04-03 2002-12-10 Ibule Photonics Co., Ltd. Ferroelectric single crystal wafer and process for the preparation thereof
KR100384442B1 (ko) * 2000-04-03 2003-05-22 (주)아이블포토닉스 신규의 복합 금속 화합물 및 이의 제조방법

Also Published As

Publication number Publication date
JP2003282986A (ja) 2003-10-03
EP1349220A3 (en) 2005-04-13
JP3987744B2 (ja) 2007-10-10
EP1349220B1 (en) 2006-11-15
US20030178914A1 (en) 2003-09-25
KR20030077924A (ko) 2003-10-04
EP1349220A2 (en) 2003-10-01
EP1655789B1 (en) 2008-08-20
DE60216039T2 (de) 2007-05-24
DE60228508D1 (de) 2008-10-02
KR100921301B1 (ko) 2009-10-09
KR20090081354A (ko) 2009-07-28
US6756238B2 (en) 2004-06-29
DE60216039D1 (de) 2006-12-28
KR100947156B1 (ko) 2010-03-12
CN100385701C (zh) 2008-04-30
CN1447455A (zh) 2003-10-08
EP1655789A1 (en) 2006-05-10

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