SG11202108439YA - Mask blank, phase shift mask, method of manufacturing phase shift mask, and method of manufacturing semiconductor device - Google Patents
Mask blank, phase shift mask, method of manufacturing phase shift mask, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11202108439YA SG11202108439YA SG11202108439YA SG11202108439YA SG11202108439YA SG 11202108439Y A SG11202108439Y A SG 11202108439YA SG 11202108439Y A SG11202108439Y A SG 11202108439YA SG 11202108439Y A SG11202108439Y A SG 11202108439YA SG 11202108439Y A SG11202108439Y A SG 11202108439YA
- Authority
- SG
- Singapore
- Prior art keywords
- phase shift
- shift mask
- manufacturing
- mask
- semiconductor device
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019023891 | 2019-02-13 | ||
PCT/JP2020/004507 WO2020166475A1 (en) | 2019-02-13 | 2020-02-06 | Mask blank, phase shift mask, method of manufacturing phase shift mask, and method of manufacturing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202108439YA true SG11202108439YA (en) | 2021-09-29 |
Family
ID=72045419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202108439YA SG11202108439YA (en) | 2019-02-13 | 2020-02-06 | Mask blank, phase shift mask, method of manufacturing phase shift mask, and method of manufacturing semiconductor device |
Country Status (7)
Country | Link |
---|---|
US (1) | US11720014B2 (en) |
JP (1) | JP7066881B2 (en) |
KR (1) | KR20210121067A (en) |
CN (1) | CN113383271B (en) |
SG (1) | SG11202108439YA (en) |
TW (1) | TW202036153A (en) |
WO (1) | WO2020166475A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102444967B1 (en) * | 2021-04-29 | 2022-09-16 | 에스케이씨솔믹스 주식회사 | Blank mask and photomask using the same |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6058757B2 (en) | 1977-11-01 | 1985-12-21 | ライオン株式会社 | 5-isopropyl-1-oxaspiro[2.4]hept-4-ene |
US5595844A (en) | 1990-11-29 | 1997-01-21 | Kabushiki Kaisha Toshiba | Method of exposing light in a method of fabricating a reticle |
JP3345447B2 (en) | 1991-11-13 | 2002-11-18 | 株式会社東芝 | Manufacturing method of exposure mask |
JP2966369B2 (en) | 1996-03-30 | 1999-10-25 | ホーヤ株式会社 | Phase shift mask and phase shift mask blank |
US5942356A (en) | 1996-03-30 | 1999-08-24 | Hoya Corporation | Phase shift mask and phase shift mask blank |
JP2001201842A (en) | 1999-11-09 | 2001-07-27 | Ulvac Seimaku Kk | Phase shift photomask blank, phase shift photomask, and manufacturing method of semiconductor device |
JP4707922B2 (en) * | 2002-04-26 | 2011-06-22 | Hoya株式会社 | Halftone phase shift mask blank and halftone phase shift mask |
US7011910B2 (en) | 2002-04-26 | 2006-03-14 | Hoya Corporation | Halftone-type phase-shift mask blank, and halftone-type phase-shift mask |
WO2005024518A2 (en) | 2003-09-05 | 2005-03-17 | Schott Ag | Phase shift mask blank with increased uniformity |
DE112014003849T5 (en) * | 2013-08-21 | 2016-05-12 | Dai Nippon Printing Co., Ltd. | A mask blank, a negative resist film mask blank, a phase shift mask, and a method of manufacturing a pattern-formed body using the same |
JP6430155B2 (en) * | 2014-06-19 | 2018-11-28 | Hoya株式会社 | Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
JP6058757B1 (en) | 2015-07-15 | 2017-01-11 | Hoya株式会社 | Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
TWI684822B (en) * | 2015-09-30 | 2020-02-11 | 日商Hoya股份有限公司 | Blank mask, phase shift mask and method for manufacturing semiconductor element |
-
2020
- 2020-02-06 CN CN202080012522.7A patent/CN113383271B/en active Active
- 2020-02-06 KR KR1020217024573A patent/KR20210121067A/en unknown
- 2020-02-06 WO PCT/JP2020/004507 patent/WO2020166475A1/en active Application Filing
- 2020-02-06 US US17/428,821 patent/US11720014B2/en active Active
- 2020-02-06 SG SG11202108439YA patent/SG11202108439YA/en unknown
- 2020-02-06 JP JP2020572202A patent/JP7066881B2/en active Active
- 2020-02-12 TW TW109104304A patent/TW202036153A/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN113383271B (en) | 2024-01-30 |
US11720014B2 (en) | 2023-08-08 |
KR20210121067A (en) | 2021-10-07 |
JP7066881B2 (en) | 2022-05-13 |
WO2020166475A1 (en) | 2020-08-20 |
US20220128898A1 (en) | 2022-04-28 |
CN113383271A (en) | 2021-09-10 |
JPWO2020166475A1 (en) | 2021-09-30 |
TW202036153A (en) | 2020-10-01 |
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