SG11202105495VA - Ruthenium etching composition and method - Google Patents

Ruthenium etching composition and method

Info

Publication number
SG11202105495VA
SG11202105495VA SG11202105495VA SG11202105495VA SG11202105495VA SG 11202105495V A SG11202105495V A SG 11202105495VA SG 11202105495V A SG11202105495V A SG 11202105495VA SG 11202105495V A SG11202105495V A SG 11202105495VA SG 11202105495V A SG11202105495V A SG 11202105495VA
Authority
SG
Singapore
Prior art keywords
etching composition
ruthenium etching
ruthenium
composition
etching
Prior art date
Application number
SG11202105495VA
Other languages
English (en)
Inventor
Steven Lippy
Emanuel I Cooper
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG11202105495VA publication Critical patent/SG11202105495VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/34—Alkaline compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
SG11202105495VA 2018-12-14 2019-11-22 Ruthenium etching composition and method SG11202105495VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862779643P 2018-12-14 2018-12-14
PCT/US2019/062835 WO2020123126A1 (fr) 2018-12-14 2019-11-22 Composition et procédé de gravure de ruthénium

Publications (1)

Publication Number Publication Date
SG11202105495VA true SG11202105495VA (en) 2021-06-29

Family

ID=71071328

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202105495VA SG11202105495VA (en) 2018-12-14 2019-11-22 Ruthenium etching composition and method

Country Status (8)

Country Link
US (1) US11346008B2 (fr)
EP (1) EP3894512A4 (fr)
JP (1) JP7269348B2 (fr)
KR (1) KR102646575B1 (fr)
CN (1) CN113195681A (fr)
SG (1) SG11202105495VA (fr)
TW (1) TWI727543B (fr)
WO (1) WO2020123126A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210127920A (ko) 2019-02-13 2021-10-25 가부시끼가이샤 도꾸야마 오늄염을 포함하는 반도체 웨이퍼의 처리액
WO2020166676A1 (fr) * 2019-02-13 2020-08-20 株式会社トクヤマ Liquide de traitement de tranche de semi-conducteur contenant des ions hypochlorite et tampon de ph
US11508585B2 (en) * 2020-06-15 2022-11-22 Taiwan Semiconductor Manufacturing Company Ltd. Methods for chemical mechanical polishing and forming interconnect structure
JP7375032B2 (ja) * 2020-08-07 2023-11-07 株式会社トクヤマ 半導体ウエハ用処理液
JPWO2022049973A1 (fr) * 2020-09-03 2022-03-10
CN117580975A (zh) * 2021-06-30 2024-02-20 恩特格里斯公司 过渡金属的抛光
JPWO2023054233A1 (fr) * 2021-09-30 2023-04-06
US20240059968A1 (en) * 2022-08-18 2024-02-22 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
KR20240044088A (ko) 2022-09-28 2024-04-04 동우 화인켐 주식회사 루테늄 금속막 식각액 조성물, 이를 이용한 패턴의 형성 방법, 어레이 기판의 제조방법, 및 이에 따라 제조된 어레이 기판

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3619745B2 (ja) * 1999-12-20 2005-02-16 株式会社日立製作所 固体表面の処理方法及び処理液並びにこれらを用いた電子デバイスの製造方法
JP2002016053A (ja) * 2000-06-28 2002-01-18 Hitachi Ltd 半導体装置の製造方法
JP4661206B2 (ja) * 2004-12-17 2011-03-30 東ソー株式会社 半導体基板洗浄液
US20060226122A1 (en) 2005-04-08 2006-10-12 Wojtczak William A Selective wet etching of metal nitrides
KR100980607B1 (ko) * 2007-11-08 2010-09-07 주식회사 하이닉스반도체 루테늄 연마용 슬러리 및 그를 이용한 연마 방법
JP2009231354A (ja) * 2008-03-19 2009-10-08 Fujifilm Corp 半導体デバイス用洗浄液、および洗浄方法
JP4848402B2 (ja) * 2008-08-20 2011-12-28 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
SG181763A1 (en) * 2009-12-17 2012-07-30 Showa Denko Kk Composition for etching ruthenium-based metal and method for preparing same
JP2014022657A (ja) 2012-07-20 2014-02-03 Fujifilm Corp エッチング方法、これを用いた半導体基板製品および半導体素子の製造方法、ならびにエッチング液調製用キット
KR20140018746A (ko) * 2012-08-03 2014-02-13 삼성전자주식회사 기판 처리방법 및 그 처리장치
KR102338550B1 (ko) * 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
JP6486957B2 (ja) * 2014-10-31 2019-03-20 富士フイルム株式会社 Ｍｒａｍドライエッチング残渣除去組成物、磁気抵抗メモリの製造方法、及び、コバルト除去組成物
WO2016068183A1 (fr) * 2014-10-31 2016-05-06 富士フイルム株式会社 Composition d'élimination de ruthénium et procédé de production de mémoire vive magnétique
WO2019138814A1 (fr) * 2018-01-12 2019-07-18 富士フイルム株式会社 Solution chimique et procédé pour traiter un substrat
JP6552676B2 (ja) * 2018-05-10 2019-07-31 富士フイルム株式会社 ルテニウム含有膜が形成された基板におけるルテニウム付着物除去用除去液
JP7219061B2 (ja) * 2018-11-14 2023-02-07 関東化学株式会社 ルテニウム除去用組成物
US11898081B2 (en) * 2019-11-21 2024-02-13 Tokyo Ohka Kogyo Co., Ltd. Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring

Also Published As

Publication number Publication date
WO2020123126A1 (fr) 2020-06-18
US20200190673A1 (en) 2020-06-18
TW202030368A (zh) 2020-08-16
JP7269348B2 (ja) 2023-05-08
KR102646575B1 (ko) 2024-03-13
TWI727543B (zh) 2021-05-11
JP2022512386A (ja) 2022-02-03
EP3894512A4 (fr) 2022-08-24
US11346008B2 (en) 2022-05-31
CN113195681A (zh) 2021-07-30
KR20210092311A (ko) 2021-07-23
EP3894512A1 (fr) 2021-10-20

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