SG11202101338UA - Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device - Google Patents

Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device

Info

Publication number
SG11202101338UA
SG11202101338UA SG11202101338UA SG11202101338UA SG11202101338UA SG 11202101338U A SG11202101338U A SG 11202101338UA SG 11202101338U A SG11202101338U A SG 11202101338UA SG 11202101338U A SG11202101338U A SG 11202101338UA SG 11202101338U A SG11202101338U A SG 11202101338UA
Authority
SG
Singapore
Prior art keywords
reflective mask
manufacturing
semiconductor device
same
mask blank
Prior art date
Application number
SG11202101338UA
Other languages
English (en)
Inventor
Mizuki KATAOKA
Yohei IKEBE
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202101338UA publication Critical patent/SG11202101338UA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG11202101338UA 2018-08-29 2019-08-08 Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device SG11202101338UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018159970A JP2020034666A (ja) 2018-08-29 2018-08-29 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
PCT/JP2019/031361 WO2020045029A1 (ja) 2018-08-29 2019-08-08 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

Publications (1)

Publication Number Publication Date
SG11202101338UA true SG11202101338UA (en) 2021-03-30

Family

ID=69644897

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202101338UA SG11202101338UA (en) 2018-08-29 2019-08-08 Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device

Country Status (6)

Country Link
US (1) US11892768B2 (ja)
JP (1) JP2020034666A (ja)
KR (1) KR20210043563A (ja)
SG (1) SG11202101338UA (ja)
TW (1) TW202027130A (ja)
WO (1) WO2020045029A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102285099B1 (ko) * 2020-01-08 2021-08-04 주식회사 에스앤에스텍 극자외선용 반사형 블랭크 마스크 및 포토마스크
JP2023000073A (ja) * 2021-06-17 2023-01-04 株式会社トッパンフォトマスク 反射型フォトマスク及び反射型フォトマスクの製造方法
CN118302719A (zh) * 2021-11-24 2024-07-05 凸版光掩模有限公司 反射型光掩模坯以及反射型光掩模
JP7346527B2 (ja) * 2021-11-25 2023-09-19 Hoya株式会社 マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法
US20230280644A1 (en) * 2022-03-03 2023-09-07 International Business Machines Corporation Method of making euv mask with an absorber layer

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2909317B2 (ja) * 1992-08-20 1999-06-23 三菱電機株式会社 フォトマスク
US6656643B2 (en) * 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering
JP2002299227A (ja) * 2001-04-03 2002-10-11 Nikon Corp 反射マスクとその製造方法及び露光装置
EP2189842B1 (en) * 2002-04-11 2017-08-23 Hoya Corporation Reflective mask blank, reflective mask and methods of producing the mask blank and the mask
JP4212025B2 (ja) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP2004207593A (ja) 2002-12-26 2004-07-22 Toppan Printing Co Ltd 極限紫外線露光用マスク及びブランク並びにパターン転写方法
US7049035B2 (en) * 2003-11-17 2006-05-23 International Business Machines Corporation Method for controlling linewidth in advanced lithography masks using electrochemistry
US20060222961A1 (en) 2005-03-31 2006-10-05 Pei-Yang Yan Leaky absorber for extreme ultraviolet mask
JP4465405B2 (ja) * 2008-02-27 2010-05-19 Ｈｏｙａ株式会社 フォトマスクブランクおよびフォトマスク並びにこれらの製造方法
JP5282507B2 (ja) 2008-09-25 2013-09-04 凸版印刷株式会社 ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクの製造方法、ハーフトーン型ｅｕｖマスクブランク及びパターン転写方法
US8765331B2 (en) * 2012-08-17 2014-07-01 International Business Machines Corporation Reducing edge die reflectivity in extreme ultraviolet lithography
JP6661262B2 (ja) * 2014-05-29 2020-03-11 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
US9436078B2 (en) * 2015-01-30 2016-09-06 Globalfoundries Inc. Method for a low profile etchable EUV absorber layer with embedded particles in a photolithography mask
KR101772943B1 (ko) * 2015-08-17 2017-09-12 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
TWI763686B (zh) * 2016-07-27 2022-05-11 美商應用材料股份有限公司 具有合金吸收劑的極紫外線遮罩坯料、製造極紫外線遮罩坯料的方法以及極紫外線遮罩坯料生產系統
WO2018074512A1 (ja) * 2016-10-21 2018-04-26 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
WO2018135468A1 (ja) * 2017-01-17 2018-07-26 Hoya株式会社 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
WO2018159785A1 (ja) * 2017-03-02 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

Also Published As

Publication number Publication date
US20210311382A1 (en) 2021-10-07
TW202027130A (zh) 2020-07-16
US11892768B2 (en) 2024-02-06
KR20210043563A (ko) 2021-04-21
JP2020034666A (ja) 2020-03-05
WO2020045029A1 (ja) 2020-03-05

Similar Documents

Publication Publication Date Title
SG11202011370VA (en) Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
SG11202011373SA (en) Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
SG11201807251SA (en) Reflective mask blank, reflective mask and method of manufacturing semiconductor device
SG11202106508PA (en) Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
SG10201907920TA (en) Semiconductor Package And Method Of Manufacturing The Same
SG10201907458SA (en) Semiconductor device and method of manufacturing the same
SG10202006561WA (en) Semiconductor device and method of fabricating the same
SG11202101338UA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
SG11202004856XA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
SG11202107980SA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
SG10201907737SA (en) Semiconductor package and method of fabricating the same
SG11202109240PA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
SG10202009397WA (en) Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
SG10202007863UA (en) Mask blank, transfer mask, and method of manufacturing semiconductor device
SG10201911903XA (en) Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
SG10201905833RA (en) Semiconductor device and manufacturing method of the semiconductor device
SG10202004731SA (en) Semiconductor die, semiconductor wafer, semiconductor device including the semiconductor die and method of manufacturing the semiconductor device
SG10201907013YA (en) Semiconductor Device And Method Of Manufacturing The Same
TWI799628B (zh) 遮罩佈局, 半導體裝置及使用遮罩佈局的製造方法
EP3940791A4 (en) SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, METHOD FOR FABRICATING SEMICONDUCTOR ELEMENT, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
EP3848957A4 (en) SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING DEVICE
SG11202010535YA (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
SG11202007994YA (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
SG11202007542WA (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
SG11202002544SA (en) Mask blank, transfer mask, and method for manufacturing semiconductor device