SG11202009169UA - Washing method, manufacturing method, and washing device for polycrystalline silicon - Google Patents

Washing method, manufacturing method, and washing device for polycrystalline silicon

Info

Publication number
SG11202009169UA
SG11202009169UA SG11202009169UA SG11202009169UA SG11202009169UA SG 11202009169U A SG11202009169U A SG 11202009169UA SG 11202009169U A SG11202009169U A SG 11202009169UA SG 11202009169U A SG11202009169U A SG 11202009169UA SG 11202009169U A SG11202009169U A SG 11202009169UA
Authority
SG
Singapore
Prior art keywords
washing
manufacturing
polycrystalline silicon
washing device
washing method
Prior art date
Application number
SG11202009169UA
Other languages
English (en)
Inventor
Hiroyuki Tasaki
Kazuhiro Kawaguchi
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of SG11202009169UA publication Critical patent/SG11202009169UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/89—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by mass-spectroscopy
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG11202009169UA 2018-03-27 2019-03-25 Washing method, manufacturing method, and washing device for polycrystalline silicon SG11202009169UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018060772 2018-03-27
PCT/JP2019/012379 WO2019188912A1 (ja) 2018-03-27 2019-03-25 多結晶シリコンの洗浄方法、製造方法および洗浄装置

Publications (1)

Publication Number Publication Date
SG11202009169UA true SG11202009169UA (en) 2020-10-29

Family

ID=68059215

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009169UA SG11202009169UA (en) 2018-03-27 2019-03-25 Washing method, manufacturing method, and washing device for polycrystalline silicon

Country Status (9)

Country Link
US (1) US12091645B2 (zh)
EP (1) EP3778480A4 (zh)
JP (1) JP6630027B1 (zh)
KR (1) KR102208311B1 (zh)
CN (1) CN111989291B (zh)
MY (1) MY194513A (zh)
SG (1) SG11202009169UA (zh)
TW (1) TWI776035B (zh)
WO (1) WO2019188912A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7471963B2 (ja) 2020-08-27 2024-04-22 株式会社トクヤマ 多結晶シリコンの清浄化方法、清浄化多結晶シリコンの製造方法および多結晶シリコンの清浄化装置
KR20240034859A (ko) * 2020-08-27 2024-03-14 가부시키가이샤 도쿠야마 다결정 실리콘 파쇄괴

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06144822A (ja) * 1992-10-30 1994-05-24 Tonen Chem Corp 高純度微細シリコン粒子の製造方法及び高純度微細シリコン粒子を用いた高純度多結晶シリコンの製造方法
JP3781571B2 (ja) * 1999-02-18 2006-05-31 三菱マテリアルポリシリコン株式会社 シリコン原料の洗浄装置及びこれに用いる循環ポンプ防護用フィルタ
US8529695B2 (en) * 2000-11-22 2013-09-10 Sumco Corporation Method for manufacturing a silicon wafer
JP4554435B2 (ja) 2005-05-23 2010-09-29 株式会社大阪チタニウムテクノロジーズ 多結晶シリコン洗浄方法
DE102006035081A1 (de) * 2006-07-28 2008-01-31 Wacker Chemie Ag Verfahren und Vorrichtung zur Herstellung von klassiertem polykristallinen Siliciumbruch in hoher Reinheit
DE102006040830A1 (de) * 2006-08-31 2008-03-06 Wacker Chemie Ag Verfahren zur Aufarbeitung einer Ätzmischung, die bei der Herstellung von hochreinem Silicium anfällt
DE102007040851A1 (de) * 2007-08-29 2009-03-05 Wacker Chemie Ag Verfahren zum Reinigen von polykristallinem Silicium
US7905963B2 (en) * 2008-11-28 2011-03-15 Mitsubishi Materials Corporation Apparatus and method for washing polycrystalline silicon
JP5494360B2 (ja) * 2009-08-31 2014-05-14 三菱マテリアル株式会社 多結晶シリコン塊の洗浄装置
JP5751748B2 (ja) * 2009-09-16 2015-07-22 信越化学工業株式会社 多結晶シリコン塊群および多結晶シリコン塊群の製造方法
CN101974785A (zh) * 2010-11-03 2011-02-16 天津市环欧半导体材料技术有限公司 一种硅多晶原料的清洗方法
CN102251242A (zh) * 2011-07-05 2011-11-23 国电宁夏太阳能有限公司 多晶硅清洗方法
DE102012200992A1 (de) * 2012-01-24 2013-07-25 Wacker Chemie Ag Dotierstoffarmes polykristallines Siliciumstück
US20130344641A1 (en) * 2012-06-26 2013-12-26 Corning Incorporated. Mechanical and chemical texturization of a silicon sheet for photovoltaic light trapping
CN103806107A (zh) * 2012-11-02 2014-05-21 无锡尚德太阳能电力有限公司 一种多晶硅片制绒方法及制绒液
CN103151423B (zh) * 2013-02-28 2015-09-16 常州捷佳创精密机械有限公司 一种多晶硅片制绒清洗工艺方法
CN203900007U (zh) * 2014-06-12 2014-10-29 陕西天宏硅材料有限责任公司 一种太阳能硅片清洗设备
JP5820917B2 (ja) * 2014-10-03 2015-11-24 信越化学工業株式会社 多結晶シリコンの製造方法
CN104393114A (zh) * 2014-11-17 2015-03-04 中国电子科技集团公司第四十八研究所 一种微纳复合绒面结构的多晶黑硅制备方法
CN104752166A (zh) * 2015-02-26 2015-07-01 南昌大学 一种用于多晶硅片扩散前清洗的方法
CN107059136A (zh) * 2017-06-26 2017-08-18 张兆民 多晶硅片的制绒工艺

Also Published As

Publication number Publication date
JP6630027B1 (ja) 2020-01-15
CN111989291A (zh) 2020-11-24
US20210024858A1 (en) 2021-01-28
KR20200123843A (ko) 2020-10-30
MY194513A (en) 2022-11-30
JPWO2019188912A1 (ja) 2020-04-30
US12091645B2 (en) 2024-09-17
WO2019188912A1 (ja) 2019-10-03
KR102208311B1 (ko) 2021-01-27
TWI776035B (zh) 2022-09-01
CN111989291B (zh) 2021-11-09
EP3778480A1 (en) 2021-02-17
TW201942058A (zh) 2019-11-01
EP3778480A4 (en) 2022-01-05

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