JP4554435B2 - 多結晶シリコン洗浄方法 - Google Patents
多結晶シリコン洗浄方法 Download PDFInfo
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- JP4554435B2 JP4554435B2 JP2005149486A JP2005149486A JP4554435B2 JP 4554435 B2 JP4554435 B2 JP 4554435B2 JP 2005149486 A JP2005149486 A JP 2005149486A JP 2005149486 A JP2005149486 A JP 2005149486A JP 4554435 B2 JP4554435 B2 JP 4554435B2
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- polycrystalline silicon
- cleaning
- hydrofluoric acid
- etching
- oxide film
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 75
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 73
- 238000004140 cleaning Methods 0.000 title claims description 48
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 122
- 238000005530 etching Methods 0.000 claims description 56
- 238000006722 reduction reaction Methods 0.000 claims description 26
- 239000000243 solution Substances 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 22
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 18
- 229910017604 nitric acid Inorganic materials 0.000 claims description 18
- 239000002994 raw material Substances 0.000 claims description 18
- 238000002844 melting Methods 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 239000011259 mixed solution Substances 0.000 claims description 7
- 239000010419 fine particle Substances 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 44
- 229910052710 silicon Inorganic materials 0.000 description 44
- 239000010703 silicon Substances 0.000 description 44
- 230000003749 cleanliness Effects 0.000 description 22
- 238000011109 contamination Methods 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000002699 waste material Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- -1 and as a result Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010306 acid treatment Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- ZSROFLZOIXCIIR-UHFFFAOYSA-N [N].F Chemical compound [N].F ZSROFLZOIXCIIR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- HYHCSLBZRBJJCH-UHFFFAOYSA-M sodium hydrosulfide Chemical compound [Na+].[SH-] HYHCSLBZRBJJCH-UHFFFAOYSA-M 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
2 酸化膜
Claims (9)
- 溶解原料用の多結晶シリコンをフッ酸液により洗浄処理した後に、フッ酸と硝酸の混合液によりエッチング処理することを特徴とする多結晶シリコン洗浄方法。
- フッ酸液の濃度が10wt%以上である請求項1に記載の多結晶シリコン洗浄方法。
- シーメンス法で製造された多結晶シリコンに対して洗浄処理及びエッチング処理を行う請求項1又は2に記載の多結晶シリコン洗浄方法。
- エッチング処理におけるエッチング代が5〜15μmである請求項3に記載の多結晶シリコン洗浄方法。
- 還元反応炉を開放する前に清浄な酸化膜を表面に形成し、しかる後に前記還元反応炉から取り出した多結晶シリコンに対して洗浄処理及びエッチング処理を行う請求項3に記載の多結晶シリコン洗浄方法。
- エッチング処理におけるエッチング代が2〜10μmである請求項5に記載の多結晶シリコン洗浄方法。
- 還元反応炉を開放する前に水蒸気を含む清浄なガスを炉内に導入することにより、多結晶シリコンの表面に清浄な酸化膜を形成する請求項5又は6に記載の多結晶シリコン洗浄方法。
- 水蒸気を含む清浄なガスは、水蒸気を含み且つ大気より0.3μm以下の微粒子が少ないガスである請求項7に記載の多結晶シリコン洗浄方法。
- 水蒸気を含み且つ大気より0.3μm以下の微粒子が少ないガスは、HEPAフィルタを通した空気、又は清浄な不活性ガスに水蒸気を混合したガスである請求項8に記載の多結晶シリコン洗浄方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005149486A JP4554435B2 (ja) | 2005-05-23 | 2005-05-23 | 多結晶シリコン洗浄方法 |
PCT/JP2006/308754 WO2006126365A1 (ja) | 2005-05-23 | 2006-04-26 | 多結晶シリコン洗浄方法 |
Applications Claiming Priority (1)
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JP2005149486A JP4554435B2 (ja) | 2005-05-23 | 2005-05-23 | 多結晶シリコン洗浄方法 |
Related Child Applications (1)
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JP2009107670A Division JP5035923B2 (ja) | 2009-04-27 | 2009-04-27 | 多結晶シリコン洗浄方法 |
Publications (2)
Publication Number | Publication Date |
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JP2006327838A JP2006327838A (ja) | 2006-12-07 |
JP4554435B2 true JP4554435B2 (ja) | 2010-09-29 |
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JP2005149486A Active JP4554435B2 (ja) | 2005-05-23 | 2005-05-23 | 多結晶シリコン洗浄方法 |
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JP (1) | JP4554435B2 (ja) |
WO (1) | WO2006126365A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018198947A1 (ja) | 2017-04-24 | 2018-11-01 | 株式会社トクヤマ | 多結晶シリコン破砕物の製造方法、及び、多結晶シリコン破砕物の表面金属濃度を管理する方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102006040830A1 (de) * | 2006-08-31 | 2008-03-06 | Wacker Chemie Ag | Verfahren zur Aufarbeitung einer Ätzmischung, die bei der Herstellung von hochreinem Silicium anfällt |
JP5100291B2 (ja) * | 2007-10-04 | 2012-12-19 | 明弘 楠見 | 蛍光性ナノ粒子、及び、それを用いて生体物質を観察する方法 |
DE102010039752A1 (de) * | 2010-08-25 | 2012-03-01 | Wacker Chemie Ag | Polykristallines Silicium und Verfahren zu dessen Herstellung |
CN102267698B (zh) * | 2011-07-07 | 2013-01-02 | 天津大学 | 一种18对棒的多晶硅还原炉的排布方式和连接方法 |
CN102502652A (zh) * | 2011-11-07 | 2012-06-20 | 江西旭阳雷迪高科技股份有限公司 | 一种多晶硅料的清洗工艺 |
DE102014201893A1 (de) * | 2014-02-03 | 2015-08-06 | Wacker Chemie Ag | Verfahren zur Herstellung von polykristallinem Silicium |
JP6433674B2 (ja) * | 2014-04-07 | 2018-12-05 | 株式会社トクヤマ | 多結晶シリコンの洗浄方法 |
JP5820917B2 (ja) * | 2014-10-03 | 2015-11-24 | 信越化学工業株式会社 | 多結晶シリコンの製造方法 |
JP6630027B1 (ja) | 2018-03-27 | 2020-01-15 | 株式会社トクヤマ | 多結晶シリコンの洗浄方法、製造方法および洗浄装置 |
KR102643428B1 (ko) | 2020-08-27 | 2024-03-06 | 가부시키가이샤 도쿠야마 | 다결정 실리콘 파쇄괴의 제조방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06227888A (ja) * | 1993-02-03 | 1994-08-16 | Fujitsu Ltd | シリコン単結晶の製造方法 |
JPH0867511A (ja) * | 1994-08-31 | 1996-03-12 | Tokuyama Corp | 多結晶シリコンの製造方法 |
JP2000128692A (ja) * | 1998-10-20 | 2000-05-09 | Mitsubishi Materials Silicon Corp | ポリシリコンの洗浄方法 |
JP2000302594A (ja) * | 1999-02-18 | 2000-10-31 | Mitsubishi Materials Polycrystalline Silicon Corp | 多結晶シリコンの洗浄方法 |
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2005
- 2005-05-23 JP JP2005149486A patent/JP4554435B2/ja active Active
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2006
- 2006-04-26 WO PCT/JP2006/308754 patent/WO2006126365A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06227888A (ja) * | 1993-02-03 | 1994-08-16 | Fujitsu Ltd | シリコン単結晶の製造方法 |
JPH0867511A (ja) * | 1994-08-31 | 1996-03-12 | Tokuyama Corp | 多結晶シリコンの製造方法 |
JP2000128692A (ja) * | 1998-10-20 | 2000-05-09 | Mitsubishi Materials Silicon Corp | ポリシリコンの洗浄方法 |
JP2000302594A (ja) * | 1999-02-18 | 2000-10-31 | Mitsubishi Materials Polycrystalline Silicon Corp | 多結晶シリコンの洗浄方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018198947A1 (ja) | 2017-04-24 | 2018-11-01 | 株式会社トクヤマ | 多結晶シリコン破砕物の製造方法、及び、多結晶シリコン破砕物の表面金属濃度を管理する方法 |
KR20190141151A (ko) | 2017-04-24 | 2019-12-23 | 가부시키가이샤 도쿠야마 | 다결정 실리콘 파쇄물의 제조 방법 및 다결정 실리콘 파쇄물의 표면 금속 농도를 관리하는 방법 |
KR102415059B1 (ko) * | 2017-04-24 | 2022-06-30 | 가부시키가이샤 도쿠야마 | 다결정 실리콘 파쇄물의 제조 방법 및 다결정 실리콘 파쇄물의 표면 금속 농도를 관리하는 방법 |
Also Published As
Publication number | Publication date |
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JP2006327838A (ja) | 2006-12-07 |
WO2006126365A1 (ja) | 2006-11-30 |
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