SG11202006295PA - Apparatus and method for detecting damage to an integrated circuit - Google Patents
Apparatus and method for detecting damage to an integrated circuitInfo
- Publication number
- SG11202006295PA SG11202006295PA SG11202006295PA SG11202006295PA SG11202006295PA SG 11202006295P A SG11202006295P A SG 11202006295PA SG 11202006295P A SG11202006295P A SG 11202006295PA SG 11202006295P A SG11202006295P A SG 11202006295PA SG 11202006295P A SG11202006295P A SG 11202006295PA
- Authority
- SG
- Singapore
- Prior art keywords
- integrated circuit
- detecting damage
- damage
- detecting
- integrated
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
- G01R31/2858—Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2896—Testing of IC packages; Test features related to IC packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Automation & Control Theory (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/892,739 US20190250208A1 (en) | 2018-02-09 | 2018-02-09 | Apparatus and method for detecting damage to an integrated circuit |
PCT/US2018/064374 WO2019156734A1 (en) | 2018-02-09 | 2018-12-07 | Apparatus and method for detecting damage to an integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202006295PA true SG11202006295PA (en) | 2020-08-28 |
Family
ID=64744987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202006295PA SG11202006295PA (en) | 2018-02-09 | 2018-12-07 | Apparatus and method for detecting damage to an integrated circuit |
Country Status (6)
Country | Link |
---|---|
US (1) | US20190250208A1 (zh) |
EP (1) | EP3749968A1 (zh) |
CN (1) | CN111684290A (zh) |
SG (1) | SG11202006295PA (zh) |
TW (1) | TW201935019A (zh) |
WO (1) | WO2019156734A1 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102475495B1 (ko) * | 2018-01-29 | 2022-12-07 | 삼성전자주식회사 | 반도체 장치 |
JP6862384B2 (ja) * | 2018-03-21 | 2021-04-21 | 株式会社東芝 | 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機 |
CN111223429B (zh) * | 2020-01-21 | 2022-08-30 | 京东方科技集团股份有限公司 | 裂纹检测电路、显示面板及裂纹检测方法 |
CN113451272B (zh) * | 2020-03-25 | 2022-04-29 | 长鑫存储技术有限公司 | 半导体结构 |
US11105846B1 (en) * | 2020-04-02 | 2021-08-31 | Globalfoundries U.S. Inc. | Crack detecting and monitoring system for an integrated circuit |
KR20220014590A (ko) * | 2020-07-29 | 2022-02-07 | 삼성전자주식회사 | 결함 검출 회로를 포함하는 반도체 장치 및 반도체 장치의 결함 검출 방법 |
TWI730895B (zh) * | 2020-09-03 | 2021-06-11 | 華邦電子股份有限公司 | 積體電路、破裂狀態偵測器以及其破裂狀態偵測方法 |
US11300610B1 (en) | 2020-12-30 | 2022-04-12 | Winbond Electronics Corp. | Integrated circuit, crack status detector and crack status detection method |
CN113362742B (zh) * | 2021-06-21 | 2022-09-27 | 武汉华星光电技术有限公司 | 一种显示面板及显示模组 |
US20230296664A1 (en) * | 2022-03-21 | 2023-09-21 | Avago Technologies International Sales Pte. Limited | Semiconductor product with edge integrity detection structure |
CN117681773A (zh) * | 2022-08-30 | 2024-03-12 | 群创光电股份有限公司 | 用于交通运输装置的风险控制系统及风险控制方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5670890A (en) * | 1993-04-22 | 1997-09-23 | Lsi Logic Corporation | Switchable pull-ups and pull-downs for IDDQ testing of integrated circuits |
US5677917A (en) * | 1996-04-29 | 1997-10-14 | Motorola, Inc. | Integrated circuit memory using fusible links in a scan chain |
US6833557B1 (en) * | 2000-06-27 | 2004-12-21 | Agere Systems Inc. | Integrated circuit and a method of manufacturing an integrated circuit |
JP2002141474A (ja) * | 2000-11-06 | 2002-05-17 | Sharp Corp | プレーナ型半導体チップとそのテスト方法並びに半導体ウエハ |
JP4202970B2 (ja) * | 2004-06-10 | 2008-12-24 | 株式会社東芝 | 半導体装置及びその製造方法、半導体装置の欠陥検出方法 |
DE102004028695B3 (de) * | 2004-06-14 | 2005-12-22 | Infineon Technologies Ag | Halbleiterbauelement mit einem Bruchsensor |
US7453258B2 (en) * | 2004-09-09 | 2008-11-18 | Formfactor, Inc. | Method and apparatus for remotely buffering test channels |
CA2599758A1 (en) * | 2005-03-08 | 2006-09-14 | Lifecycle Pharma A/S | Pharmaceutical compositions comprising sirolimus and/or an analogue thereof |
DE102005021586B3 (de) * | 2005-05-10 | 2007-02-01 | Infineon Technologies Ag | Halbleiterchip und Verfahren zur Überprüfung der Unversehrtheit von Halbleiterchips |
JP4949733B2 (ja) * | 2006-05-11 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2008021864A (ja) * | 2006-07-13 | 2008-01-31 | Nec Electronics Corp | 半導体装置 |
DE102006037633B4 (de) * | 2006-08-10 | 2008-06-19 | Infineon Technologies Ag | Halbleiterchip mit Beschädigungs-Detektierschaltung und ein Verfahren zum Herstellen eines Halbleiterchips |
US8116106B2 (en) * | 2008-09-19 | 2012-02-14 | Power Integrations, Inc. | Method and apparatus to select a parameter/mode based on a measurement during an initialization period |
US20130009663A1 (en) * | 2011-07-07 | 2013-01-10 | Infineon Technologies Ag | Crack detection line device and method |
US8901989B2 (en) * | 2012-07-26 | 2014-12-02 | Qualcomm Incorporated | Adaptive gate drive circuit with temperature compensation |
US9159646B2 (en) * | 2012-12-13 | 2015-10-13 | Intel Corporation | Apparatus and method to monitor die edge defects |
US9070683B2 (en) * | 2013-06-20 | 2015-06-30 | Freescale Semiconductor, Inc. | Die fracture detection and humidity protection with double guard ring arrangement |
TW201513242A (zh) * | 2013-09-02 | 2015-04-01 | Biotronik Se & Co Kg | 晶片及晶片製造方法 |
US9589914B2 (en) * | 2014-11-28 | 2017-03-07 | Infineon Technologies Ag | Semiconductor chip |
DE102014117723B4 (de) * | 2014-12-02 | 2019-01-24 | Infineon Technologies Ag | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
US9741667B2 (en) * | 2015-04-10 | 2017-08-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Integrated circuit with die edge assurance structure |
US10431507B2 (en) * | 2015-05-11 | 2019-10-01 | Robert Bosch Gmbh | Contact-via chain as corrosion detector |
KR20170051085A (ko) * | 2015-11-02 | 2017-05-11 | 삼성전자주식회사 | 3차원 크랙 검출 구조물을 포함하는 반도체 장치 및 크랙 검출 방법 |
US9818655B2 (en) * | 2015-12-08 | 2017-11-14 | International Business Machines Corporation | Method and structure for flip-chip package reliability monitoring using capacitive sensors groups |
-
2018
- 2018-02-09 US US15/892,739 patent/US20190250208A1/en not_active Abandoned
- 2018-12-07 CN CN201880088789.7A patent/CN111684290A/zh active Pending
- 2018-12-07 EP EP18822238.4A patent/EP3749968A1/en not_active Withdrawn
- 2018-12-07 SG SG11202006295PA patent/SG11202006295PA/en unknown
- 2018-12-07 WO PCT/US2018/064374 patent/WO2019156734A1/en unknown
- 2018-12-12 TW TW107144792A patent/TW201935019A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TW201935019A (zh) | 2019-09-01 |
CN111684290A (zh) | 2020-09-18 |
WO2019156734A1 (en) | 2019-08-15 |
EP3749968A1 (en) | 2020-12-16 |
US20190250208A1 (en) | 2019-08-15 |
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