SG11202006295PA - Apparatus and method for detecting damage to an integrated circuit - Google Patents

Apparatus and method for detecting damage to an integrated circuit

Info

Publication number
SG11202006295PA
SG11202006295PA SG11202006295PA SG11202006295PA SG11202006295PA SG 11202006295P A SG11202006295P A SG 11202006295PA SG 11202006295P A SG11202006295P A SG 11202006295PA SG 11202006295P A SG11202006295P A SG 11202006295PA SG 11202006295P A SG11202006295P A SG 11202006295PA
Authority
SG
Singapore
Prior art keywords
integrated circuit
detecting damage
damage
detecting
integrated
Prior art date
Application number
SG11202006295PA
Other languages
English (en)
Inventor
Vijayakumar Dhanasekaran
Qubo Zhou
Lennart Karl-Axel Mathe
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of SG11202006295PA publication Critical patent/SG11202006295PA/en

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2884Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2856Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/2856Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G01R31/2858Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2896Testing of IC packages; Test features related to IC packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/32Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20Resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors having potential barriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
SG11202006295PA 2018-02-09 2018-12-07 Apparatus and method for detecting damage to an integrated circuit SG11202006295PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/892,739 US20190250208A1 (en) 2018-02-09 2018-02-09 Apparatus and method for detecting damage to an integrated circuit
PCT/US2018/064374 WO2019156734A1 (en) 2018-02-09 2018-12-07 Apparatus and method for detecting damage to an integrated circuit

Publications (1)

Publication Number Publication Date
SG11202006295PA true SG11202006295PA (en) 2020-08-28

Family

ID=64744987

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202006295PA SG11202006295PA (en) 2018-02-09 2018-12-07 Apparatus and method for detecting damage to an integrated circuit

Country Status (6)

Country Link
US (1) US20190250208A1 (zh)
EP (1) EP3749968A1 (zh)
CN (1) CN111684290A (zh)
SG (1) SG11202006295PA (zh)
TW (1) TW201935019A (zh)
WO (1) WO2019156734A1 (zh)

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KR102475495B1 (ko) * 2018-01-29 2022-12-07 삼성전자주식회사 반도체 장치
JP6862384B2 (ja) * 2018-03-21 2021-04-21 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
CN111223429B (zh) * 2020-01-21 2022-08-30 京东方科技集团股份有限公司 裂纹检测电路、显示面板及裂纹检测方法
CN113451272B (zh) * 2020-03-25 2022-04-29 长鑫存储技术有限公司 半导体结构
US11105846B1 (en) * 2020-04-02 2021-08-31 Globalfoundries U.S. Inc. Crack detecting and monitoring system for an integrated circuit
KR20220014590A (ko) * 2020-07-29 2022-02-07 삼성전자주식회사 결함 검출 회로를 포함하는 반도체 장치 및 반도체 장치의 결함 검출 방법
TWI730895B (zh) * 2020-09-03 2021-06-11 華邦電子股份有限公司 積體電路、破裂狀態偵測器以及其破裂狀態偵測方法
US11300610B1 (en) 2020-12-30 2022-04-12 Winbond Electronics Corp. Integrated circuit, crack status detector and crack status detection method
CN113362742B (zh) * 2021-06-21 2022-09-27 武汉华星光电技术有限公司 一种显示面板及显示模组
US20230296664A1 (en) * 2022-03-21 2023-09-21 Avago Technologies International Sales Pte. Limited Semiconductor product with edge integrity detection structure
CN117681773A (zh) * 2022-08-30 2024-03-12 群创光电股份有限公司 用于交通运输装置的风险控制系统及风险控制方法

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US5677917A (en) * 1996-04-29 1997-10-14 Motorola, Inc. Integrated circuit memory using fusible links in a scan chain
US6833557B1 (en) * 2000-06-27 2004-12-21 Agere Systems Inc. Integrated circuit and a method of manufacturing an integrated circuit
JP2002141474A (ja) * 2000-11-06 2002-05-17 Sharp Corp プレーナ型半導体チップとそのテスト方法並びに半導体ウエハ
JP4202970B2 (ja) * 2004-06-10 2008-12-24 株式会社東芝 半導体装置及びその製造方法、半導体装置の欠陥検出方法
DE102004028695B3 (de) * 2004-06-14 2005-12-22 Infineon Technologies Ag Halbleiterbauelement mit einem Bruchsensor
US7453258B2 (en) * 2004-09-09 2008-11-18 Formfactor, Inc. Method and apparatus for remotely buffering test channels
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JP4949733B2 (ja) * 2006-05-11 2012-06-13 ルネサスエレクトロニクス株式会社 半導体装置
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US9818655B2 (en) * 2015-12-08 2017-11-14 International Business Machines Corporation Method and structure for flip-chip package reliability monitoring using capacitive sensors groups

Also Published As

Publication number Publication date
TW201935019A (zh) 2019-09-01
CN111684290A (zh) 2020-09-18
WO2019156734A1 (en) 2019-08-15
EP3749968A1 (en) 2020-12-16
US20190250208A1 (en) 2019-08-15

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