SG11202006295PA - Apparatus and method for detecting damage to an integrated circuit - Google Patents
Apparatus and method for detecting damage to an integrated circuitInfo
- Publication number
- SG11202006295PA SG11202006295PA SG11202006295PA SG11202006295PA SG11202006295PA SG 11202006295P A SG11202006295P A SG 11202006295PA SG 11202006295P A SG11202006295P A SG 11202006295PA SG 11202006295P A SG11202006295P A SG 11202006295PA SG 11202006295P A SG11202006295P A SG 11202006295PA
- Authority
- SG
- Singapore
- Prior art keywords
- integrated circuit
- detecting damage
- damage
- detecting
- integrated
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2855—Environmental, reliability or burn-in testing
- G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
- G01R31/2858—Measuring of material aspects, e.g. electro-migration [EM], hot carrier injection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2896—Testing of IC packages; Test features related to IC packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Automation & Control Theory (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/892,739 US20190250208A1 (en) | 2018-02-09 | 2018-02-09 | Apparatus and method for detecting damage to an integrated circuit |
PCT/US2018/064374 WO2019156734A1 (en) | 2018-02-09 | 2018-12-07 | Apparatus and method for detecting damage to an integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202006295PA true SG11202006295PA (en) | 2020-08-28 |
Family
ID=64744987
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202006295PA SG11202006295PA (en) | 2018-02-09 | 2018-12-07 | Apparatus and method for detecting damage to an integrated circuit |
Country Status (6)
Country | Link |
---|---|
US (1) | US20190250208A1 (en) |
EP (1) | EP3749968A1 (en) |
CN (1) | CN111684290A (en) |
SG (1) | SG11202006295PA (en) |
TW (1) | TW201935019A (en) |
WO (1) | WO2019156734A1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102475495B1 (en) * | 2018-01-29 | 2022-12-07 | 삼성전자주식회사 | A semiconductor device |
JP6862384B2 (en) * | 2018-03-21 | 2021-04-21 | 株式会社東芝 | Semiconductor devices, semiconductor device manufacturing methods, inverter circuits, drives, vehicles, and elevators |
CN111223429B (en) * | 2020-01-21 | 2022-08-30 | 京东方科技集团股份有限公司 | Crack detection circuit, display panel and crack detection method |
CN113451272B (en) * | 2020-03-25 | 2022-04-29 | 长鑫存储技术有限公司 | Semiconductor structure |
US11105846B1 (en) * | 2020-04-02 | 2021-08-31 | Globalfoundries U.S. Inc. | Crack detecting and monitoring system for an integrated circuit |
KR20220014590A (en) | 2020-07-29 | 2022-02-07 | 삼성전자주식회사 | Semiconductor device including defect detection circuit and method of detecting defects in the same |
TWI730895B (en) * | 2020-09-03 | 2021-06-11 | 華邦電子股份有限公司 | Integrated circuit, crack status detector and crack status detection method |
US11300610B1 (en) | 2020-12-30 | 2022-04-12 | Winbond Electronics Corp. | Integrated circuit, crack status detector and crack status detection method |
CN113362742B (en) * | 2021-06-21 | 2022-09-27 | 武汉华星光电技术有限公司 | Display panel and display module |
US20230296664A1 (en) * | 2022-03-21 | 2023-09-21 | Avago Technologies International Sales Pte. Limited | Semiconductor product with edge integrity detection structure |
CN117681773A (en) * | 2022-08-30 | 2024-03-12 | 群创光电股份有限公司 | Risk control system and risk control method for transportation device |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5670890A (en) * | 1993-04-22 | 1997-09-23 | Lsi Logic Corporation | Switchable pull-ups and pull-downs for IDDQ testing of integrated circuits |
US5677917A (en) * | 1996-04-29 | 1997-10-14 | Motorola, Inc. | Integrated circuit memory using fusible links in a scan chain |
US6833557B1 (en) * | 2000-06-27 | 2004-12-21 | Agere Systems Inc. | Integrated circuit and a method of manufacturing an integrated circuit |
JP2002141474A (en) * | 2000-11-06 | 2002-05-17 | Sharp Corp | Planar semiconductor chip, testing method therefor and semiconductor wafer |
JP4202970B2 (en) * | 2004-06-10 | 2008-12-24 | 株式会社東芝 | Semiconductor device and manufacturing method thereof, and defect detection method of semiconductor device |
DE102004028695B3 (en) * | 2004-06-14 | 2005-12-22 | Infineon Technologies Ag | Breakage sensor for installation near edge of semiconductor substrate has isolation layer and several electrode layers with terminals connected to sensor circuit |
US7453258B2 (en) * | 2004-09-09 | 2008-11-18 | Formfactor, Inc. | Method and apparatus for remotely buffering test channels |
US20080275076A1 (en) * | 2005-03-08 | 2008-11-06 | Per Holm | Pharmaceutical Compositions Comprising Sirolimus and/or an Analogue Thereof |
DE102005021586B3 (en) * | 2005-05-10 | 2007-02-01 | Infineon Technologies Ag | Semiconductor chip tested for intact flanks and edges, includes electronic test circuit integrated into semiconductor chip |
JP4949733B2 (en) * | 2006-05-11 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | Semiconductor device |
JP2008021864A (en) * | 2006-07-13 | 2008-01-31 | Nec Electronics Corp | Semiconductor device |
DE102006037633B4 (en) * | 2006-08-10 | 2008-06-19 | Infineon Technologies Ag | Semiconductor chip with damage detection circuit and a method of manufacturing a semiconductor chip |
US8116106B2 (en) * | 2008-09-19 | 2012-02-14 | Power Integrations, Inc. | Method and apparatus to select a parameter/mode based on a measurement during an initialization period |
US20130009663A1 (en) * | 2011-07-07 | 2013-01-10 | Infineon Technologies Ag | Crack detection line device and method |
US8901989B2 (en) * | 2012-07-26 | 2014-12-02 | Qualcomm Incorporated | Adaptive gate drive circuit with temperature compensation |
US9159646B2 (en) * | 2012-12-13 | 2015-10-13 | Intel Corporation | Apparatus and method to monitor die edge defects |
US9070683B2 (en) * | 2013-06-20 | 2015-06-30 | Freescale Semiconductor, Inc. | Die fracture detection and humidity protection with double guard ring arrangement |
TW201513242A (en) * | 2013-09-02 | 2015-04-01 | Biotronik Se & Co Kg | Die and manufacturing method for a die |
US9589914B2 (en) * | 2014-11-28 | 2017-03-07 | Infineon Technologies Ag | Semiconductor chip |
DE102014117723B4 (en) * | 2014-12-02 | 2019-01-24 | Infineon Technologies Ag | Semiconductor device and method of manufacturing a semiconductor device |
US9741667B2 (en) * | 2015-04-10 | 2017-08-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Integrated circuit with die edge assurance structure |
US10431507B2 (en) * | 2015-05-11 | 2019-10-01 | Robert Bosch Gmbh | Contact-via chain as corrosion detector |
KR20170051085A (en) * | 2015-11-02 | 2017-05-11 | 삼성전자주식회사 | Embedded refresh controller and memory device including the same |
US9818655B2 (en) * | 2015-12-08 | 2017-11-14 | International Business Machines Corporation | Method and structure for flip-chip package reliability monitoring using capacitive sensors groups |
-
2018
- 2018-02-09 US US15/892,739 patent/US20190250208A1/en not_active Abandoned
- 2018-12-07 SG SG11202006295PA patent/SG11202006295PA/en unknown
- 2018-12-07 EP EP18822238.4A patent/EP3749968A1/en not_active Withdrawn
- 2018-12-07 WO PCT/US2018/064374 patent/WO2019156734A1/en unknown
- 2018-12-07 CN CN201880088789.7A patent/CN111684290A/en active Pending
- 2018-12-12 TW TW107144792A patent/TW201935019A/en unknown
Also Published As
Publication number | Publication date |
---|---|
TW201935019A (en) | 2019-09-01 |
CN111684290A (en) | 2020-09-18 |
WO2019156734A1 (en) | 2019-08-15 |
EP3749968A1 (en) | 2020-12-16 |
US20190250208A1 (en) | 2019-08-15 |
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