SG11202005911RA - Method of forming resist pattern - Google Patents

Method of forming resist pattern

Info

Publication number
SG11202005911RA
SG11202005911RA SG11202005911RA SG11202005911RA SG11202005911RA SG 11202005911R A SG11202005911R A SG 11202005911RA SG 11202005911R A SG11202005911R A SG 11202005911RA SG 11202005911R A SG11202005911R A SG 11202005911RA SG 11202005911R A SG11202005911R A SG 11202005911RA
Authority
SG
Singapore
Prior art keywords
resist pattern
forming resist
forming
pattern
resist
Prior art date
Application number
SG11202005911RA
Other languages
English (en)
Inventor
Shinichi Kohno
Takeaki Shiroki
Yoshiaki Ohno
Aya Saito
Tomonari SUNAMICHI
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of SG11202005911RA publication Critical patent/SG11202005911RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11202005911RA 2017-12-28 2018-12-20 Method of forming resist pattern SG11202005911RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017254872A JP7080049B2 (ja) 2017-12-28 2017-12-28 レジストパターン形成方法
PCT/JP2018/047024 WO2019131447A1 (ja) 2017-12-28 2018-12-20 レジストパターン形成方法

Publications (1)

Publication Number Publication Date
SG11202005911RA true SG11202005911RA (en) 2020-07-29

Family

ID=67063611

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202005911RA SG11202005911RA (en) 2017-12-28 2018-12-20 Method of forming resist pattern

Country Status (5)

Country Link
JP (1) JP7080049B2 (ko)
KR (1) KR102435078B1 (ko)
CN (1) CN111542782A (ko)
SG (1) SG11202005911RA (ko)
WO (1) WO2019131447A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021192802A1 (ja) * 2020-03-26 2021-09-30 富士フイルム株式会社 感放射線性樹脂組成物の製造方法、パターン形成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001312060A (ja) * 2000-05-01 2001-11-09 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物、感光性膜付基板およびレジストパターンの形成方法
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP2006301289A (ja) * 2005-04-20 2006-11-02 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト組成物およびレジストパターン形成方法
JP4937594B2 (ja) * 2006-02-02 2012-05-23 東京応化工業株式会社 厚膜レジスト膜形成用のポジ型レジスト組成物、厚膜レジスト積層体およびレジストパターン形成方法
JP5250309B2 (ja) * 2008-05-28 2013-07-31 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
US20160306278A1 (en) * 2015-04-20 2016-10-20 Tokyo Ohka Kogyo Co., Ltd. Chemical for photolithography with improved liquid transfer property and resist composition comprising the same
JP6655628B2 (ja) * 2015-11-05 2020-02-26 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、及び、電子デバイスの製造方法
WO2018042892A1 (ja) * 2016-08-30 2018-03-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び、電子デバイスの製造方法
CN110494806B (zh) * 2017-05-19 2024-03-15 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、抗蚀剂膜、图案形成方法及电子器件的制造方法

Also Published As

Publication number Publication date
KR20200088460A (ko) 2020-07-22
JP7080049B2 (ja) 2022-06-03
WO2019131447A1 (ja) 2019-07-04
CN111542782A (zh) 2020-08-14
JP2019120766A (ja) 2019-07-22
KR102435078B1 (ko) 2022-08-22

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