JP7080049B2 - レジストパターン形成方法 - Google Patents

レジストパターン形成方法 Download PDF

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Publication number
JP7080049B2
JP7080049B2 JP2017254872A JP2017254872A JP7080049B2 JP 7080049 B2 JP7080049 B2 JP 7080049B2 JP 2017254872 A JP2017254872 A JP 2017254872A JP 2017254872 A JP2017254872 A JP 2017254872A JP 7080049 B2 JP7080049 B2 JP 7080049B2
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Japan
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carbon atoms
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JP2017254872A
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English (en)
Japanese (ja)
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JP2019120766A (ja
Inventor
紳一 河野
雄哲 白木
慶晃 大野
彩 齊藤
智成 砂道
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Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2017254872A priority Critical patent/JP7080049B2/ja
Priority to PCT/JP2018/047024 priority patent/WO2019131447A1/ja
Priority to CN201880083529.0A priority patent/CN111542782A/zh
Priority to KR1020207018311A priority patent/KR102435078B1/ko
Priority to SG11202005911RA priority patent/SG11202005911RA/en
Publication of JP2019120766A publication Critical patent/JP2019120766A/ja
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Publication of JP7080049B2 publication Critical patent/JP7080049B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2017254872A 2017-12-28 2017-12-28 レジストパターン形成方法 Active JP7080049B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017254872A JP7080049B2 (ja) 2017-12-28 2017-12-28 レジストパターン形成方法
PCT/JP2018/047024 WO2019131447A1 (ja) 2017-12-28 2018-12-20 レジストパターン形成方法
CN201880083529.0A CN111542782A (zh) 2017-12-28 2018-12-20 抗蚀剂图案形成方法
KR1020207018311A KR102435078B1 (ko) 2017-12-28 2018-12-20 레지스트 패턴 형성 방법
SG11202005911RA SG11202005911RA (en) 2017-12-28 2018-12-20 Method of forming resist pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017254872A JP7080049B2 (ja) 2017-12-28 2017-12-28 レジストパターン形成方法

Publications (2)

Publication Number Publication Date
JP2019120766A JP2019120766A (ja) 2019-07-22
JP7080049B2 true JP7080049B2 (ja) 2022-06-03

Family

ID=67063611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017254872A Active JP7080049B2 (ja) 2017-12-28 2017-12-28 レジストパターン形成方法

Country Status (5)

Country Link
JP (1) JP7080049B2 (ko)
KR (1) KR102435078B1 (ko)
CN (1) CN111542782A (ko)
SG (1) SG11202005911RA (ko)
WO (1) WO2019131447A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7336024B2 (ja) * 2020-03-26 2023-08-30 富士フイルム株式会社 感放射線性樹脂組成物の製造方法、パターン形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007088884A1 (ja) 2006-02-02 2007-08-09 Tokyo Ohka Kogyo Co., Ltd. 厚膜レジスト膜形成用のポジ型レジスト組成物、厚膜レジスト積層体およびレジストパターン形成方法
WO2017078031A1 (ja) 2015-11-05 2017-05-11 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、及び、電子デバイスの製造方法
WO2018042892A1 (ja) 2016-08-30 2018-03-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び、電子デバイスの製造方法
WO2018212079A1 (ja) 2017-05-19 2018-11-22 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001312060A (ja) * 2000-05-01 2001-11-09 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物、感光性膜付基板およびレジストパターンの形成方法
JP3895224B2 (ja) 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP2006301289A (ja) * 2005-04-20 2006-11-02 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト組成物およびレジストパターン形成方法
JP5250309B2 (ja) * 2008-05-28 2013-07-31 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
US20160306278A1 (en) * 2015-04-20 2016-10-20 Tokyo Ohka Kogyo Co., Ltd. Chemical for photolithography with improved liquid transfer property and resist composition comprising the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007088884A1 (ja) 2006-02-02 2007-08-09 Tokyo Ohka Kogyo Co., Ltd. 厚膜レジスト膜形成用のポジ型レジスト組成物、厚膜レジスト積層体およびレジストパターン形成方法
WO2017078031A1 (ja) 2015-11-05 2017-05-11 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、及び、電子デバイスの製造方法
WO2018042892A1 (ja) 2016-08-30 2018-03-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び、電子デバイスの製造方法
WO2018212079A1 (ja) 2017-05-19 2018-11-22 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法

Also Published As

Publication number Publication date
KR102435078B1 (ko) 2022-08-22
KR20200088460A (ko) 2020-07-22
JP2019120766A (ja) 2019-07-22
CN111542782A (zh) 2020-08-14
WO2019131447A1 (ja) 2019-07-04
SG11202005911RA (en) 2020-07-29

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