SG11202000957SA - Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer - Google Patents

Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer

Info

Publication number
SG11202000957SA
SG11202000957SA SG11202000957SA SG11202000957SA SG11202000957SA SG 11202000957S A SG11202000957S A SG 11202000957SA SG 11202000957S A SG11202000957S A SG 11202000957SA SG 11202000957S A SG11202000957S A SG 11202000957SA SG 11202000957S A SG11202000957S A SG 11202000957SA
Authority
SG
Singapore
Prior art keywords
semiconductor wafer
producing
monocrystalline silicon
wafer
semiconductor
Prior art date
Application number
SG11202000957SA
Other languages
English (en)
Inventor
Andreas Sattler
Alexander Vollkopf
Karl Mangelberger
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11202000957SA publication Critical patent/SG11202000957SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
    • H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
SG11202000957SA 2017-08-04 2018-07-19 Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer SG11202000957SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017213587.5A DE102017213587A1 (de) 2017-08-04 2017-08-04 Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung der Halbleiterscheibe
PCT/EP2018/069584 WO2019025197A1 (de) 2017-08-04 2018-07-19 Halbleiterscheibe aus einkristallinem silizium und verfahren zur herstellung der halbleiterscheibe

Publications (1)

Publication Number Publication Date
SG11202000957SA true SG11202000957SA (en) 2020-03-30

Family

ID=62976069

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202000957SA SG11202000957SA (en) 2017-08-04 2018-07-19 Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer

Country Status (10)

Country Link
US (2) US11417733B2 (ja)
EP (1) EP3662504A1 (ja)
JP (1) JP7098717B2 (ja)
KR (1) KR102318313B1 (ja)
CN (1) CN110998789B (ja)
DE (1) DE102017213587A1 (ja)
IL (1) IL271983B2 (ja)
SG (1) SG11202000957SA (ja)
TW (1) TWI665342B (ja)
WO (1) WO2019025197A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017213587A1 (de) * 2017-08-04 2019-02-07 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung der Halbleiterscheibe

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW331017B (en) 1996-02-15 1998-05-01 Toshiba Co Ltd Manufacturing and checking method of semiconductor substrate
TW505709B (en) * 1998-05-22 2002-10-11 Shinetsu Handotai Kk A method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer
JP3601340B2 (ja) 1999-02-01 2004-12-15 信越半導体株式会社 エピタキシャルシリコンウエーハおよびその製造方法並びにエピタキシャルシリコンウエーハ用基板
JP2003124219A (ja) * 2001-10-10 2003-04-25 Sumitomo Mitsubishi Silicon Corp シリコンウエーハおよびエピタキシャルシリコンウエーハ
KR20070032336A (ko) * 2004-07-22 2007-03-21 신에쯔 한도타이 가부시키가이샤 실리콘 에피택셜 웨이퍼 및 그 제조방법
JP4711167B2 (ja) * 2004-08-25 2011-06-29 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
DE102005013831B4 (de) * 2005-03-24 2008-10-16 Siltronic Ag Siliciumscheibe und Verfahren zur thermischen Behandlung einer Siliciumscheibe
SG142208A1 (en) * 2006-10-18 2008-05-28 Siltronic Ag Process for producing p»-doped and epitaxially coated semiconductor wafers from silicon
JP4853237B2 (ja) * 2006-11-06 2012-01-11 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
JP5276863B2 (ja) * 2008-03-21 2013-08-28 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハ
KR101184380B1 (ko) * 2008-08-28 2012-09-20 매그나칩 반도체 유한회사 에피택셜 웨이퍼 제조 방법, 이를 적용한 에피택셜 웨이퍼,및 반도체 소자
DE102008046617B4 (de) * 2008-09-10 2016-02-04 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren für deren Herstellung
JP2011253978A (ja) 2010-06-03 2011-12-15 Sumco Corp エピタキシャル基板およびその製造方法
TWI614808B (zh) * 2012-11-19 2018-02-11 太陽愛迪生公司 藉由活化非活性氧沉澱核製造高沉澱密度晶圓之方法
JP6020342B2 (ja) * 2013-05-10 2016-11-02 信越半導体株式会社 シリコンエピタキシャルウェーハ及びシリコンエピタキシャルウェーハの製造方法
DE102014221421B3 (de) 2014-10-22 2015-12-24 Siltronic Ag Verfahren zur Herstellung einer epitaktischen Halbleiterscheibe aus einkristallinem Silizium
DE102015200890A1 (de) * 2015-01-21 2016-07-21 Siltronic Ag Epitaktisch beschichtete Halbleiterscheibe und Verfahren zur Herstellung einer epitaktisch beschichteten Halbleiterscheibe
DE102015226399A1 (de) * 2015-12-22 2017-06-22 Siltronic Ag Siliciumscheibe mit homogener radialer Sauerstoffvariation
DE102017213587A1 (de) * 2017-08-04 2019-02-07 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zur Herstellung der Halbleiterscheibe

Also Published As

Publication number Publication date
IL271983B2 (en) 2023-04-01
KR102318313B1 (ko) 2021-10-29
DE102017213587A1 (de) 2019-02-07
JP7098717B2 (ja) 2022-07-11
EP3662504A1 (de) 2020-06-10
US11621330B2 (en) 2023-04-04
TW201910567A (zh) 2019-03-16
US20220328636A1 (en) 2022-10-13
CN110998789A (zh) 2020-04-10
CN110998789B (zh) 2023-07-07
JP2020529958A (ja) 2020-10-15
TWI665342B (zh) 2019-07-11
US20200168712A1 (en) 2020-05-28
US11417733B2 (en) 2022-08-16
WO2019025197A1 (de) 2019-02-07
IL271983A (en) 2020-02-27
KR20200028439A (ko) 2020-03-16
IL271983B (en) 2022-12-01

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