SG11201908017RA - Growth substrate for forming optoelectronic devices, method for manufacturing such a substrate, and use of the substrate, in particular in the field of micro-display screens - Google Patents
Growth substrate for forming optoelectronic devices, method for manufacturing such a substrate, and use of the substrate, in particular in the field of micro-display screensInfo
- Publication number
- SG11201908017RA SG11201908017RA SG11201908017RA SG11201908017RA SG 11201908017R A SG11201908017R A SG 11201908017RA SG 11201908017R A SG11201908017R A SG 11201908017RA SG 11201908017R A SG11201908017R A SG 11201908017RA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- micro
- manufacturing
- growth
- optoelectronic devices
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/01—Manufacture or treatment
- H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
Landscapes
- Recrystallisation Techniques (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1752230A FR3064108B1 (fr) | 2017-03-17 | 2017-03-17 | Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage |
| FR1852155A FR3079070B1 (fr) | 2018-03-13 | 2018-03-13 | Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins presentant une variete de parametres de maille |
| FR1852156A FR3079071B1 (fr) | 2018-03-13 | 2018-03-13 | Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins prensentant une variete de parametres de maille |
| PCT/FR2018/050606 WO2018167426A2 (fr) | 2017-03-17 | 2018-03-14 | Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201908017RA true SG11201908017RA (en) | 2019-10-30 |
Family
ID=61827769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201908017R SG11201908017RA (en) | 2017-03-17 | 2018-03-14 | Growth substrate for forming optoelectronic devices, method for manufacturing such a substrate, and use of the substrate, in particular in the field of micro-display screens |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20210210653A1 (https=) |
| EP (2) | EP4033531B1 (https=) |
| JP (2) | JP7053055B2 (https=) |
| KR (1) | KR102456048B1 (https=) |
| CN (1) | CN110447100B (https=) |
| SG (1) | SG11201908017RA (https=) |
| TW (1) | TWI740015B (https=) |
| WO (1) | WO2018167426A2 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3103627B1 (fr) * | 2019-11-25 | 2023-03-24 | Soitec Silicon On Insulator | Procede de production d'un substrat comprenant une etape de traitement thermique de relaxation |
| TWI905261B (zh) * | 2021-09-09 | 2025-11-21 | 晶元光電股份有限公司 | 光電元件 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2751963B2 (ja) * | 1992-06-10 | 1998-05-18 | 日亜化学工業株式会社 | 窒化インジウムガリウム半導体の成長方法 |
| EP0786149B1 (en) * | 1994-10-11 | 2000-07-26 | International Business Machines Corporation | Monolithic array of light emitting diodes for the generation of light at multiple wavelengths and its use for multicolor display applications |
| US20020136932A1 (en) * | 2001-03-21 | 2002-09-26 | Seikoh Yoshida | GaN-based light emitting device |
| JP2004022969A (ja) | 2002-06-19 | 2004-01-22 | Nippon Telegr & Teleph Corp <Ntt> | 半導体発光素子 |
| JP4706204B2 (ja) * | 2004-08-06 | 2011-06-22 | セイコーエプソン株式会社 | 半導体基板の製造方法および半導体装置の製造方法 |
| US7888197B2 (en) * | 2007-01-11 | 2011-02-15 | International Business Machines Corporation | Method of forming stressed SOI FET having doped glass box layer using sacrificial stressed layer |
| GB2451884A (en) * | 2007-08-16 | 2009-02-18 | Sharp Kk | A Semiconductor Device and a Method of Manufacture Thereof |
| CN101540357B (zh) * | 2008-03-19 | 2010-09-01 | 中国科学院半导体研究所 | 控制自组织铟镓砷量子点成核的生长方法 |
| TWI457984B (zh) * | 2008-08-06 | 2014-10-21 | Ｓ Ｏ Ｉ Ｔｅｃ絕緣層上矽科技公司 | 應變層的鬆弛方法 |
| EP2151852B1 (en) * | 2008-08-06 | 2020-01-15 | Soitec | Relaxation and transfer of strained layers |
| EP2151856A1 (en) * | 2008-08-06 | 2010-02-10 | S.O.I. TEC Silicon | Relaxation of strained layers |
| FR2936903B1 (fr) | 2008-10-07 | 2011-01-14 | Soitec Silicon On Insulator | Relaxation d'une couche de materiau contraint avec application d'un raidisseur |
| CN102203904B (zh) * | 2008-10-30 | 2013-11-20 | S.O.I.探测硅绝缘技术公司 | 形成具有减小的晶格应变的半导体材料层、半导体结构、装置的方法及包含具有减小的晶格应变的半导体材料层、半导体结构、装置的工程衬底 |
| KR101081169B1 (ko) * | 2010-04-05 | 2011-11-07 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법, 발광 소자 패키지, 조명 시스템 |
| WO2011145283A1 (ja) | 2010-05-20 | 2011-11-24 | パナソニック株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
| FR2992465B1 (fr) | 2012-06-22 | 2015-03-20 | Soitec Silicon On Insulator | Procede de fabrication collective de leds et structure pour la fabrication collective de leds |
| FR2992466A1 (fr) | 2012-06-22 | 2013-12-27 | Soitec Silicon On Insulator | Procede de realisation de contact pour led et structure resultante |
| DE112014001385T5 (de) | 2013-03-15 | 2015-12-17 | Soitec | Halbleiterlichtemitterstruktur mit einem aktiven Gebiet, das InGaN enthält, und Verfahren für seine Herstellung |
-
2018
- 2018-03-14 JP JP2019541084A patent/JP7053055B2/ja active Active
- 2018-03-14 KR KR1020197030303A patent/KR102456048B1/ko active Active
- 2018-03-14 EP EP22161925.7A patent/EP4033531B1/fr active Active
- 2018-03-14 SG SG11201908017R patent/SG11201908017RA/en unknown
- 2018-03-14 EP EP18714309.4A patent/EP3596756B1/fr active Active
- 2018-03-14 US US16/069,469 patent/US20210210653A1/en not_active Abandoned
- 2018-03-14 WO PCT/FR2018/050606 patent/WO2018167426A2/fr not_active Ceased
- 2018-03-14 CN CN201880018523.5A patent/CN110447100B/zh active Active
- 2018-03-15 TW TW107108791A patent/TWI740015B/zh active
-
2022
- 2022-03-24 JP JP2022048947A patent/JP7322329B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP4033531A1 (fr) | 2022-07-27 |
| EP4033531B1 (fr) | 2023-08-02 |
| KR102456048B1 (ko) | 2022-10-19 |
| US20210210653A1 (en) | 2021-07-08 |
| JP7322329B2 (ja) | 2023-08-08 |
| CN110447100B (zh) | 2023-07-18 |
| EP3596756B1 (fr) | 2023-02-15 |
| JP2022087136A (ja) | 2022-06-09 |
| TW201903830A (zh) | 2019-01-16 |
| JP7053055B2 (ja) | 2022-04-12 |
| JP2020512684A (ja) | 2020-04-23 |
| TWI740015B (zh) | 2021-09-21 |
| KR20190123347A (ko) | 2019-10-31 |
| WO2018167426A2 (fr) | 2018-09-20 |
| WO2018167426A3 (fr) | 2018-11-22 |
| CN110447100A (zh) | 2019-11-12 |
| EP3596756A2 (fr) | 2020-01-22 |
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