CN110447100B - 用于形成光电器件的生长基板、制造该基板的方法以及该基板特别是在微显示器领域的使用 - Google Patents

用于形成光电器件的生长基板、制造该基板的方法以及该基板特别是在微显示器领域的使用 Download PDF

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Publication number
CN110447100B
CN110447100B CN201880018523.5A CN201880018523A CN110447100B CN 110447100 B CN110447100 B CN 110447100B CN 201880018523 A CN201880018523 A CN 201880018523A CN 110447100 B CN110447100 B CN 110447100B
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China
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islands
layer
substrate
manufacturing
different
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CN201880018523.5A
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Chinese (zh)
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CN110447100A (zh
Inventor
D·索塔
奥利弗·勒杜
O·邦宁
J-M·贝斯奥谢
莫尔加纳·洛吉奥
R·考尔米隆
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Soitec SA
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Soitec SA
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Priority claimed from FR1752230A external-priority patent/FR3064108B1/fr
Priority claimed from FR1852156A external-priority patent/FR3079071B1/fr
Priority claimed from FR1852155A external-priority patent/FR3079070B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Publication of CN110447100A publication Critical patent/CN110447100A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials

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  • Recrystallisation Techniques (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201880018523.5A 2017-03-17 2018-03-14 用于形成光电器件的生长基板、制造该基板的方法以及该基板特别是在微显示器领域的使用 Active CN110447100B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
FR1752230 2017-03-17
FR1752230A FR3064108B1 (fr) 2017-03-17 2017-03-17 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel susbstrat, et utilisation du susbtrat notamment dans le domaine des micro-ecrans d'affichage
FR1852155 2018-03-13
FR1852156A FR3079071B1 (fr) 2018-03-13 2018-03-13 Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins prensentant une variete de parametres de maille
FR1852155A FR3079070B1 (fr) 2018-03-13 2018-03-13 Procede de fabrication d'une pluralite d'ilots semi-conducteurs cristallins presentant une variete de parametres de maille
FR1852156 2018-03-13
PCT/FR2018/050606 WO2018167426A2 (fr) 2017-03-17 2018-03-14 Substrat de croissance pour la formation de dispositifs optoelectroniques, procede de fabrication d'un tel substrat, et utilisation du substrat notamment dans le domaine des micro-ecrans d'affichage

Publications (2)

Publication Number Publication Date
CN110447100A CN110447100A (zh) 2019-11-12
CN110447100B true CN110447100B (zh) 2023-07-18

Family

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Family Applications (1)

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CN201880018523.5A Active CN110447100B (zh) 2017-03-17 2018-03-14 用于形成光电器件的生长基板、制造该基板的方法以及该基板特别是在微显示器领域的使用

Country Status (8)

Country Link
US (1) US20210210653A1 (https=)
EP (2) EP4033531B1 (https=)
JP (2) JP7053055B2 (https=)
KR (1) KR102456048B1 (https=)
CN (1) CN110447100B (https=)
SG (1) SG11201908017RA (https=)
TW (1) TWI740015B (https=)
WO (1) WO2018167426A2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3103627B1 (fr) * 2019-11-25 2023-03-24 Soitec Silicon On Insulator Procede de production d'un substrat comprenant une etape de traitement thermique de relaxation
TWI905261B (zh) * 2021-09-09 2025-11-21 晶元光電股份有限公司 光電元件

Citations (2)

* Cited by examiner, † Cited by third party
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JP2006049673A (ja) * 2004-08-06 2006-02-16 Seiko Epson Corp 半導体基板、半導体装置、半導体基板の製造方法および半導体装置の製造方法
CN101221901A (zh) * 2007-01-11 2008-07-16 国际商业机器公司 应力绝缘体上硅场效应晶体管及其制作方法

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JP2751963B2 (ja) * 1992-06-10 1998-05-18 日亜化学工業株式会社 窒化インジウムガリウム半導体の成長方法
DE69425383T2 (de) * 1994-10-11 2001-02-15 International Business Machines Corp., Armonk Monoelektrische anordnung von lichtemittierenden dioden zur lichterzeugung mehrerer wellenlängen und deren anwendung für mehrfarben-anzeigevorrichtungen
US20020136932A1 (en) * 2001-03-21 2002-09-26 Seikoh Yoshida GaN-based light emitting device
JP2004022969A (ja) 2002-06-19 2004-01-22 Nippon Telegr & Teleph Corp <Ntt> 半導体発光素子
GB2451884A (en) * 2007-08-16 2009-02-18 Sharp Kk A Semiconductor Device and a Method of Manufacture Thereof
CN101540357B (zh) * 2008-03-19 2010-09-01 中国科学院半导体研究所 控制自组织铟镓砷量子点成核的生长方法
EP2151852B1 (en) 2008-08-06 2020-01-15 Soitec Relaxation and transfer of strained layers
TWI457984B (zh) * 2008-08-06 2014-10-21 Ｓ Ｏ Ｉ Ｔｅｃ絕緣層上矽科技公司 應變層的鬆弛方法
EP2151856A1 (en) 2008-08-06 2010-02-10 S.O.I. TEC Silicon Relaxation of strained layers
FR2936903B1 (fr) 2008-10-07 2011-01-14 Soitec Silicon On Insulator Relaxation d'une couche de materiau contraint avec application d'un raidisseur
KR101408475B1 (ko) * 2008-10-30 2014-06-19 소이텍 감소된 격자 변형을 갖는 반도체 재료층들, 반도체 구조들, 디바이스들 및 이를 포함하는 가공된 기판을 형성하는 방법들
KR101081169B1 (ko) * 2010-04-05 2011-11-07 엘지이노텍 주식회사 발광 소자 및 그 제조방법, 발광 소자 패키지, 조명 시스템
WO2011145283A1 (ja) 2010-05-20 2011-11-24 パナソニック株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
FR2992466A1 (fr) 2012-06-22 2013-12-27 Soitec Silicon On Insulator Procede de realisation de contact pour led et structure resultante
FR2992465B1 (fr) 2012-06-22 2015-03-20 Soitec Silicon On Insulator Procede de fabrication collective de leds et structure pour la fabrication collective de leds
WO2014140370A1 (en) 2013-03-15 2014-09-18 Soitec Semiconductor light emitting structure having active region comprising ingan and method of its fabrication

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049673A (ja) * 2004-08-06 2006-02-16 Seiko Epson Corp 半導体基板、半導体装置、半導体基板の製造方法および半導体装置の製造方法
CN101221901A (zh) * 2007-01-11 2008-07-16 国际商业机器公司 应力绝缘体上硅场效应晶体管及其制作方法

Also Published As

Publication number Publication date
JP2020512684A (ja) 2020-04-23
KR20190123347A (ko) 2019-10-31
EP3596756B1 (fr) 2023-02-15
WO2018167426A3 (fr) 2018-11-22
SG11201908017RA (en) 2019-10-30
EP3596756A2 (fr) 2020-01-22
JP7322329B2 (ja) 2023-08-08
TW201903830A (zh) 2019-01-16
WO2018167426A2 (fr) 2018-09-20
TWI740015B (zh) 2021-09-21
JP7053055B2 (ja) 2022-04-12
US20210210653A1 (en) 2021-07-08
KR102456048B1 (ko) 2022-10-19
EP4033531A1 (fr) 2022-07-27
EP4033531B1 (fr) 2023-08-02
CN110447100A (zh) 2019-11-12
JP2022087136A (ja) 2022-06-09

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