WO2018008891A3 - 반투명막 제조방법, 가시광영역의 흡수성 특성을 갖는 산화물반도체 및 그 제조방법 - Google Patents
반투명막 제조방법, 가시광영역의 흡수성 특성을 갖는 산화물반도체 및 그 제조방법 Download PDFInfo
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- WO2018008891A3 WO2018008891A3 PCT/KR2017/006862 KR2017006862W WO2018008891A3 WO 2018008891 A3 WO2018008891 A3 WO 2018008891A3 KR 2017006862 W KR2017006862 W KR 2017006862W WO 2018008891 A3 WO2018008891 A3 WO 2018008891A3
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- Prior art keywords
- translucent film
- manufacturing
- oxide semiconductor
- visible light
- light region
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- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000010521 absorption reaction Methods 0.000 title abstract 2
- 238000004070 electrodeposition Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H01L31/02—Details
- H01L31/0224—Electrodes
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1067—Oxide
- H01L2924/10672—Copper(I)oxide [Cu2O]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
본 발명은 기판 위에 비진공 상태의 전기증착을 이용하여 반투명막층이 형성되는 S1 단계; 및 반투명막층 위에 비진공 상태의 전기증착을 이용하여 활성층이 형성되는 S2 단계를 포함하며, 반투명막층에서 특정방향의 우선배향성이 정해지고, 활성층은 반투명막층에서 정해진 특정방향으로 성장하는 것을 특징으로 하는 가시광영역의 흡수성 특성을 갖는 산화물반도체 제조방법에 관한 것이다. 저온 전기증착 공정으로 성장된 p형 산화물 반도체의 단점인 높은 비저항 문제를, 금속 계면활성제를 통해 전기화학적 성장 거동을 제어하여 해결하는 효과가 있다.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR10-2016-0085989 | 2016-07-07 | ||
KR1020160085989A KR101862072B1 (ko) | 2016-07-07 | 2016-07-07 | 반투명막 제조방법, 가시광영역의 흡수성 특성을 갖는 산화물반도체 및 그 제조방법 |
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Publication Number | Publication Date |
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WO2018008891A2 WO2018008891A2 (ko) | 2018-01-11 |
WO2018008891A3 true WO2018008891A3 (ko) | 2018-08-09 |
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PCT/KR2017/006862 WO2018008891A2 (ko) | 2016-07-07 | 2017-06-29 | 반투명막 제조방법, 가시광영역의 흡수성 특성을 갖는 산화물반도체 및 그 제조방법 |
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KR (1) | KR101862072B1 (ko) |
WO (1) | WO2018008891A2 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102220381B1 (ko) | 2019-07-31 | 2021-02-24 | 성균관대학교산학협력단 | 산화물 반도체의 제조 방법 |
KR102640703B1 (ko) | 2021-11-01 | 2024-02-23 | 연세대학교 산학협력단 | 유기물 도핑을 이용한 유연 및 투명 산화물 기반 가시광 반도체의 제작 방법 및 가시광 반도체 |
KR102639310B1 (ko) * | 2021-11-25 | 2024-02-21 | 한림대학교 산학협력단 | 요오드 도핑된 CuO 필름을 포함하는 반도체 소자 및 이의 제조 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000040564A (ko) * | 1998-12-18 | 2000-07-05 | 조장연 | 질화물 청색 발광소자의 도전성 투명 산화막 전극 제작 방법 |
KR20080077103A (ko) * | 2005-11-02 | 2008-08-21 | 솔로파워, 인코포레이티드 | 태양전지 및 모듈 제작용 반도체의 층들을 증착하는 장치및 기술 |
KR101182155B1 (ko) * | 2011-05-20 | 2012-09-12 | 인천대학교 산학협력단 | 반도체 장치 및 금속박막 형성방법 |
WO2013157715A1 (ko) * | 2012-04-16 | 2013-10-24 | 전자부품연구원 | 저온 공정을 이용한 산화물 박막 제조방법, 산화물 박막 및 그 전자소자 |
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JP2006041336A (ja) | 2004-07-29 | 2006-02-09 | Sharp Corp | 半導体装置およびその製造方法 |
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2016
- 2016-07-07 KR KR1020160085989A patent/KR101862072B1/ko active IP Right Grant
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- 2017-06-29 WO PCT/KR2017/006862 patent/WO2018008891A2/ko active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20000040564A (ko) * | 1998-12-18 | 2000-07-05 | 조장연 | 질화물 청색 발광소자의 도전성 투명 산화막 전극 제작 방법 |
KR20080077103A (ko) * | 2005-11-02 | 2008-08-21 | 솔로파워, 인코포레이티드 | 태양전지 및 모듈 제작용 반도체의 층들을 증착하는 장치및 기술 |
KR101182155B1 (ko) * | 2011-05-20 | 2012-09-12 | 인천대학교 산학협력단 | 반도체 장치 및 금속박막 형성방법 |
WO2013157715A1 (ko) * | 2012-04-16 | 2013-10-24 | 전자부품연구원 | 저온 공정을 이용한 산화물 박막 제조방법, 산화물 박막 및 그 전자소자 |
Non-Patent Citations (1)
Title |
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BAEK, SEUNG KI ET AL.: "Low-Temperature Processable High-performance Electtocliemically Deposited p-Type Cuprous Oxides Achieved by Incorporating a Small Amount of Antimony", ADVANCED FUNCTIONAL MATERIALS, 14 July 2015 (2015-07-14), pages 5214 - 5221, XP055535497 * |
Also Published As
Publication number | Publication date |
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KR20180005835A (ko) | 2018-01-17 |
KR101862072B1 (ko) | 2018-05-29 |
WO2018008891A2 (ko) | 2018-01-11 |
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