SG11201906975PA - Structure for rf use - Google Patents
Structure for rf useInfo
- Publication number
- SG11201906975PA SG11201906975PA SG11201906975PA SG11201906975PA SG11201906975PA SG 11201906975P A SG11201906975P A SG 11201906975PA SG 11201906975P A SG11201906975P A SG 11201906975PA SG 11201906975P A SG11201906975P A SG 11201906975PA SG 11201906975P A SG11201906975P A SG 11201906975PA
- Authority
- SG
- Singapore
- Prior art keywords
- layer
- dielectric layer
- front surface
- support substrate
- electrode
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
- Waveguides (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1750870A FR3062517B1 (fr) | 2017-02-02 | 2017-02-02 | Structure pour application radiofrequence |
PCT/FR2018/050196 WO2018142052A1 (fr) | 2017-02-02 | 2018-01-29 | Structure pour application radiofréquence |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201906975PA true SG11201906975PA (en) | 2019-08-27 |
Family
ID=58779151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201906975PA SG11201906975PA (en) | 2017-02-02 | 2018-01-29 | Structure for rf use |
Country Status (9)
Country | Link |
---|---|
US (3) | US11043756B2 (ko) |
EP (1) | EP3577683B1 (ko) |
JP (1) | JP7098851B2 (ko) |
KR (1) | KR102520751B1 (ko) |
CN (1) | CN110235238B (ko) |
FR (1) | FR3062517B1 (ko) |
SG (1) | SG11201906975PA (ko) |
TW (1) | TWI764978B (ko) |
WO (1) | WO2018142052A1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3086096B1 (fr) * | 2018-09-14 | 2021-08-27 | Soitec Silicon On Insulator | Procede de realisation d'un substrat avance pour une integration hybride |
FR3091010B1 (fr) * | 2018-12-24 | 2020-12-04 | Soitec Silicon On Insulator | Structure de type semi-conducteur pour applications digitales et radiofréquences, et procédé de fabrication d’une telle structure |
FR3091004B1 (fr) * | 2018-12-24 | 2020-12-04 | Soitec Silicon On Insulator | Structure de type semi-conducteur pour applications digitales et radiofréquences |
US11271079B2 (en) * | 2020-01-15 | 2022-03-08 | Globalfoundries U.S. Inc. | Wafer with crystalline silicon and trap rich polysilicon layer |
TWI761255B (zh) | 2021-07-08 | 2022-04-11 | 環球晶圓股份有限公司 | 晶圓及晶圓的製造方法 |
FR3136325A1 (fr) * | 2022-06-02 | 2023-12-08 | Soitec | Dispositif a ondes elastiques de surface |
Family Cites Families (38)
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EP0159601A3 (de) * | 1984-04-10 | 1987-08-19 | Hartwig Wolfgang Prof.Dr. Thim | Logik-Schaltungsanordnung mit dazu angepasst ausgebildeten Feldeffekt-Transistoren |
US5841623A (en) * | 1995-12-22 | 1998-11-24 | Lam Research Corporation | Chuck for substrate processing and method for depositing a film in a radio frequency biased plasma chemical depositing system |
JPH1041512A (ja) * | 1996-07-23 | 1998-02-13 | Denso Corp | 半導体装置 |
JP2000058844A (ja) * | 1998-08-10 | 2000-02-25 | Denso Corp | 半導体装置及び半導体装置の製造方法 |
JP2004207271A (ja) * | 2002-12-20 | 2004-07-22 | Nec Electronics Corp | Soi基板及び半導体集積回路装置 |
US6956278B2 (en) * | 2003-06-30 | 2005-10-18 | Matrix Semiconductor, Inc. | Low-density, high-resistivity titanium nitride layer for use as a contact for low-leakage dielectric layers |
JP4773697B2 (ja) * | 2004-06-30 | 2011-09-14 | ルネサスエレクトロニクス株式会社 | Soi基板およびその製造方法ならびに半導体装置 |
US7709313B2 (en) * | 2005-07-19 | 2010-05-04 | International Business Machines Corporation | High performance capacitors in planar back gates CMOS |
US20100027355A1 (en) * | 2007-07-31 | 2010-02-04 | Dao Thuy B | Planar double gate transistor storage cell |
US7993752B2 (en) * | 2008-03-17 | 2011-08-09 | Nano PV Technologies, Inc. | Transparent conductive layer and method |
JP2010114165A (ja) * | 2008-11-04 | 2010-05-20 | Nikon Corp | 半導体装置、積層半導体装置および積層半導体装置の製造方法 |
JP4917085B2 (ja) * | 2008-12-15 | 2012-04-18 | 東京エレクトロン株式会社 | 半導体装置 |
US8133774B2 (en) * | 2009-03-26 | 2012-03-13 | International Business Machines Corporation | SOI radio frequency switch with enhanced electrical isolation |
US8742459B2 (en) * | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
US8466036B2 (en) * | 2010-12-24 | 2013-06-18 | Io Semiconductor, Inc. | Trap rich layer for semiconductor devices |
US8481405B2 (en) * | 2010-12-24 | 2013-07-09 | Io Semiconductor, Inc. | Trap rich layer with through-silicon-vias in semiconductor devices |
US8536021B2 (en) | 2010-12-24 | 2013-09-17 | Io Semiconductor, Inc. | Trap rich layer formation techniques for semiconductor devices |
FR2973158B1 (fr) * | 2011-03-22 | 2014-02-28 | Soitec Silicon On Insulator | Procédé de fabrication d'un substrat de type semi-conducteur sur isolant pour applications radiofréquences |
CN103199110B (zh) * | 2012-01-09 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | 一种nldmos器件及其制造方法 |
KR102360695B1 (ko) * | 2014-01-23 | 2022-02-08 | 글로벌웨이퍼스 씨오., 엘티디. | 고 비저항 soi 웨이퍼 및 그 제조 방법 |
US20150228714A1 (en) * | 2014-02-13 | 2015-08-13 | Rfaxis, Inc. | Isolation methods for leakage, loss and non-linearity mitigation in radio-frequency integrated circuits on high-resistivity silicon-on-insulator substrates |
US9269591B2 (en) * | 2014-03-24 | 2016-02-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Handle wafer for high resistivity trap-rich SOI |
US9209198B2 (en) * | 2014-05-12 | 2015-12-08 | Macronix International Co., Ltd. | Memory cell and manufacturing method thereof |
US9917571B2 (en) * | 2014-06-13 | 2018-03-13 | Georgia Tech Research Corporation | Resonant gyroscopes and methods of making and using the same |
FR3024587B1 (fr) * | 2014-08-01 | 2018-01-26 | Soitec | Procede de fabrication d'une structure hautement resistive |
JP6650463B2 (ja) * | 2014-11-18 | 2020-02-19 | グローバルウェーハズ カンパニー リミテッドGlobalWafers Co.,Ltd. | 電荷トラップ層を備えた高抵抗率の半導体・オン・インシュレーターウェハーの製造方法 |
FR3029682B1 (fr) | 2014-12-04 | 2017-12-29 | Soitec Silicon On Insulator | Substrat semi-conducteur haute resistivite et son procede de fabrication |
JP6344271B2 (ja) * | 2015-03-06 | 2018-06-20 | 信越半導体株式会社 | 貼り合わせ半導体ウェーハ及び貼り合わせ半導体ウェーハの製造方法 |
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FR3052592B1 (fr) * | 2016-06-08 | 2018-05-18 | Soitec | Structure pour applications radiofrequences |
FR3062238A1 (fr) * | 2017-01-26 | 2018-07-27 | Soitec | Support pour une structure semi-conductrice |
EP3496281A1 (en) * | 2017-12-07 | 2019-06-12 | Infineon Technologies AG | System and method for a radio frequency filter |
DE102018215018A1 (de) * | 2018-09-04 | 2020-03-05 | Infineon Technologies Ag | Feuchtigkeitssensor |
-
2017
- 2017-02-02 FR FR1750870A patent/FR3062517B1/fr active Active
-
2018
- 2018-01-29 KR KR1020197024060A patent/KR102520751B1/ko active IP Right Grant
- 2018-01-29 CN CN201880009739.5A patent/CN110235238B/zh active Active
- 2018-01-29 US US16/480,249 patent/US11043756B2/en active Active
- 2018-01-29 EP EP18705431.7A patent/EP3577683B1/fr active Active
- 2018-01-29 WO PCT/FR2018/050196 patent/WO2018142052A1/fr unknown
- 2018-01-29 TW TW107103106A patent/TWI764978B/zh active
- 2018-01-29 SG SG11201906975PA patent/SG11201906975PA/en unknown
- 2018-01-29 JP JP2019538653A patent/JP7098851B2/ja active Active
-
2021
- 2021-05-25 US US17/330,237 patent/US11502428B2/en active Active
-
2022
- 2022-08-01 US US17/816,599 patent/US20220368036A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
KR102520751B1 (ko) | 2023-04-12 |
TW201830660A (zh) | 2018-08-16 |
CN110235238B (zh) | 2023-08-29 |
KR20190112738A (ko) | 2019-10-07 |
US20220368036A1 (en) | 2022-11-17 |
EP3577683A1 (fr) | 2019-12-11 |
US20210280990A1 (en) | 2021-09-09 |
WO2018142052A1 (fr) | 2018-08-09 |
US20190372243A1 (en) | 2019-12-05 |
TWI764978B (zh) | 2022-05-21 |
EP3577683B1 (fr) | 2022-09-21 |
CN110235238A (zh) | 2019-09-13 |
JP2020509576A (ja) | 2020-03-26 |
FR3062517A1 (fr) | 2018-08-03 |
US11043756B2 (en) | 2021-06-22 |
US11502428B2 (en) | 2022-11-15 |
FR3062517B1 (fr) | 2019-03-15 |
JP7098851B2 (ja) | 2022-07-12 |
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