SG11201900996VA - Optical near-field metrology - Google Patents
Optical near-field metrologyInfo
- Publication number
- SG11201900996VA SG11201900996VA SG11201900996VA SG11201900996VA SG11201900996VA SG 11201900996V A SG11201900996V A SG 11201900996VA SG 11201900996V A SG11201900996V A SG 11201900996VA SG 11201900996V A SG11201900996V A SG 11201900996VA SG 11201900996V A SG11201900996V A SG 11201900996VA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- wafer
- optical
- metrology
- features
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
- G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/026—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring distance between sensor and object
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
- G01B11/303—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces using photoelectric detection means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
- G01B9/02002—Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies
- G01B9/02004—Interferometers characterised by controlling or generating intrinsic radiation properties using two or more frequencies using frequency scans
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/64—Fluorescence; Phosphorescence
- G01N21/6489—Photoluminescence of semiconductors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
- G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Immunology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Inspection Of Paper Currency And Valuable Securities (AREA)
- Holo Graphy (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662400627P | 2016-09-28 | 2016-09-28 | |
US15/599,881 US11815347B2 (en) | 2016-09-28 | 2017-05-19 | Optical near-field metrology |
PCT/US2017/041404 WO2018063471A2 (en) | 2016-09-28 | 2017-07-10 | Optical near-field metrology |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201900996VA true SG11201900996VA (en) | 2019-04-29 |
Family
ID=61685219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201900996VA SG11201900996VA (en) | 2016-09-28 | 2017-07-10 | Optical near-field metrology |
Country Status (9)
Country | Link |
---|---|
US (1) | US11815347B2 (zh) |
EP (1) | EP3519762A4 (zh) |
JP (1) | JP7113829B2 (zh) |
KR (1) | KR102488219B1 (zh) |
CN (1) | CN109661559B (zh) |
IL (1) | IL264547B2 (zh) |
SG (1) | SG11201900996VA (zh) |
TW (1) | TWI782924B (zh) |
WO (1) | WO2018063471A2 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018026373A1 (en) * | 2016-08-04 | 2018-02-08 | Kla-Tencor Corporation | Method and computer program product for controlling the positioning of patterns on a substrate in a manufacturing process |
US10444161B2 (en) * | 2017-04-05 | 2019-10-15 | Kla-Tencor Corporation | Systems and methods for metrology with layer-specific illumination spectra |
EP3444676A1 (en) * | 2017-08-15 | 2019-02-20 | ASML Netherlands B.V. | Metrology method, apparatus and computer program |
US10677588B2 (en) * | 2018-04-09 | 2020-06-09 | Kla-Tencor Corporation | Localized telecentricity and focus optimization for overlay metrology |
JP2020173207A (ja) * | 2019-04-12 | 2020-10-22 | 株式会社ミツトヨ | 形状測定機 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3071858D1 (en) | 1980-07-31 | 1987-01-22 | Ibm | Method and device for optical distance measurement |
JP2988788B2 (ja) | 1992-09-18 | 1999-12-13 | 科学技術振興事業団 | 走査型近接場光学顕微鏡 |
US5387972A (en) | 1993-03-15 | 1995-02-07 | National Research Council Of Canada | Coherent phase and frequency detection using sum-frequency mixing in non-linear waveguides |
JP3535356B2 (ja) | 1997-09-18 | 2004-06-07 | 片岡 俊彦 | 光共振器を利用した走査型近接場光学顕微鏡 |
AT410845B (de) | 2000-06-09 | 2003-08-25 | Kranz Christine Dr | Vorrichtung für die gleichzeitige durchführung einer elektrochemischen und einer topographischen nahfeld-mikroskopie |
AU2001281192A1 (en) * | 2000-08-08 | 2002-02-18 | California Institute Of Technology | Optical sensing based on whispering-gallery-mode microcavity |
WO2002044672A2 (en) | 2000-11-28 | 2002-06-06 | Rosemount Inc. | Arrangement for measuring physical parameters with an optical sensor |
US7498564B2 (en) * | 2001-02-06 | 2009-03-03 | University Of Bristol Of Senate House | Resonant scanning near-field optical microscope |
WO2005019798A2 (en) | 2003-08-13 | 2005-03-03 | The Regents Of The University Of Michigan | Biochemical sensors with micro-resonators |
US7218803B1 (en) * | 2006-03-24 | 2007-05-15 | Fitel Usa Corp. | Microsphere probe for optical surface microscopy and method of using the same |
US9041938B2 (en) | 2006-05-02 | 2015-05-26 | California Institute Of Technology | Surface wave assisted structures and systems |
US8116624B1 (en) * | 2007-01-29 | 2012-02-14 | Cirrex Systems Llc | Method and system for evaluating an optical device |
JP5406729B2 (ja) | 2007-02-05 | 2014-02-05 | ブラウン ユニバーシティ | 改良型高解像度超音波顕微鏡 |
US7639351B2 (en) | 2007-03-20 | 2009-12-29 | Tokyo Electron Limited | Automated process control using optical metrology with a photonic nanojet |
WO2008141301A1 (en) * | 2007-05-10 | 2008-11-20 | Veeco Instruments Inc. | Non-destructive wafer-scale sub-surface ultrasonic microscopy employing near field afm detection |
US8402819B2 (en) | 2007-05-15 | 2013-03-26 | Anasys Instruments, Inc. | High frequency deflection measurement of IR absorption |
DE202007010784U1 (de) * | 2007-08-03 | 2007-10-04 | Rosenberger Hochfrequenztechnik Gmbh & Co. Kg | Kontaktloses Messsystem |
US20090281452A1 (en) * | 2008-05-02 | 2009-11-12 | Marcus Pfister | System and method for a medical procedure using computed tomography |
US8593638B2 (en) | 2008-10-02 | 2013-11-26 | California Institute Of Technology | Split frequency sensing methods and systems |
SG163442A1 (en) | 2009-01-13 | 2010-08-30 | Semiconductor Technologies & Instruments | System and method for inspecting a wafer |
US8619260B2 (en) | 2009-11-02 | 2013-12-31 | Corning Incorporated | Multi-grating biosensor for label-independent optical readers |
WO2012144903A2 (en) | 2011-04-22 | 2012-10-26 | Mapper Lithography Ip B.V. | Lithography system for processing a target, such as a wafer, a method for operating a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system |
US20140110606A1 (en) * | 2011-05-27 | 2014-04-24 | Hitachi, Ltd. | Near-field optical defect inspection apparatus |
US9400246B2 (en) | 2011-10-11 | 2016-07-26 | Kla-Tencor Corporation | Optical metrology tool equipped with modulated illumination sources |
DE102012201393A1 (de) | 2012-02-01 | 2013-08-01 | Dr. Johannes Heidenhain Gmbh | Positionsmesseinrichtung und Anordnung mit mehreren Positionsmesseinrichtungen |
JP5743958B2 (ja) * | 2012-05-30 | 2015-07-01 | キヤノン株式会社 | 計測方法、露光方法および装置 |
FR2994734B1 (fr) | 2012-08-21 | 2017-08-25 | Fogale Nanotech | Dispositif et procede pour faire des mesures dimensionnelles sur des objets multi-couches tels que des wafers. |
TWI688760B (zh) | 2013-03-11 | 2020-03-21 | 美商克萊譚克公司 | 使用表面增強電場之缺陷偵測 |
US9442391B2 (en) | 2013-03-12 | 2016-09-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Overlay sampling methodology |
CN103226296B (zh) | 2013-04-27 | 2015-04-15 | 清华大学 | 一种带激光干涉仪测量的粗精动叠层工作台 |
JP2014228323A (ja) | 2013-05-20 | 2014-12-08 | ウシオ電機株式会社 | 検査方法、センサ |
US8997258B2 (en) | 2013-05-23 | 2015-03-31 | National Institute Of Standards And Technology | Microscope probe and method for use of same |
US9646896B2 (en) * | 2013-07-12 | 2017-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithographic overlay sampling |
CN104390596B (zh) | 2014-11-12 | 2017-01-25 | 广东工业大学 | 一种便携式光栅尺主尺刻画器及其刻画方法 |
-
2017
- 2017-05-19 US US15/599,881 patent/US11815347B2/en active Active
- 2017-07-10 EP EP17856951.3A patent/EP3519762A4/en not_active Withdrawn
- 2017-07-10 CN CN201780054088.7A patent/CN109661559B/zh active Active
- 2017-07-10 SG SG11201900996VA patent/SG11201900996VA/en unknown
- 2017-07-10 JP JP2019537744A patent/JP7113829B2/ja active Active
- 2017-07-10 WO PCT/US2017/041404 patent/WO2018063471A2/en unknown
- 2017-07-10 KR KR1020197012199A patent/KR102488219B1/ko active IP Right Grant
- 2017-09-28 TW TW106133381A patent/TWI782924B/zh active
-
2019
- 2019-01-30 IL IL264547A patent/IL264547B2/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN109661559A (zh) | 2019-04-19 |
JP2019535023A (ja) | 2019-12-05 |
WO2018063471A3 (en) | 2018-07-26 |
WO2018063471A2 (en) | 2018-04-05 |
IL264547A (en) | 2019-02-28 |
CN109661559B (zh) | 2021-07-30 |
IL264547B2 (en) | 2023-05-01 |
US20180087900A1 (en) | 2018-03-29 |
TWI782924B (zh) | 2022-11-11 |
EP3519762A4 (en) | 2020-05-27 |
US11815347B2 (en) | 2023-11-14 |
IL264547B1 (en) | 2023-01-01 |
EP3519762A2 (en) | 2019-08-07 |
KR102488219B1 (ko) | 2023-01-12 |
TW201819936A (zh) | 2018-06-01 |
JP7113829B2 (ja) | 2022-08-05 |
KR20190050856A (ko) | 2019-05-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11201900996VA (en) | Optical near-field metrology | |
SG11201809913PA (en) | Methods for detecting target nucleic acids in a sample | |
SG11201803666WA (en) | Single image detection | |
SG11201900509YA (en) | Simultaneous capturing of overlay signals from multiple targets | |
SG11201807249YA (en) | Planar-beam, light detection and ranging system | |
SG11201807030TA (en) | Radar mounting estimation with unstructured data | |
SG11201903488UA (en) | System and method for obstacle detection | |
SG11201906413XA (en) | Exposure apparatus | |
SG11201803667RA (en) | Systems and methods for region-adaptive defect detection | |
SG11201909262SA (en) | Sensor for controlling an automatic door | |
SG11201805965WA (en) | Core-shell plasmonic nanogapped nanostructured material | |
SG11201907074RA (en) | Determining the impacts of stochastic behavior on overlay metrology data | |
SG11201900804WA (en) | System and method for generating multi-channel tunable illumination from a broadband source | |
SG11201902925PA (en) | Phenotype/disease specific gene ranking using curated, gene library and network based data structures | |
SG11201903682WA (en) | Nondestructive inspection method for coatings and ceramic matrix composites | |
SG11201903958SA (en) | Intuitive occluded object indicator | |
SG11201811333RA (en) | Solid inspection apparatus and method of use | |
SG11201901168UA (en) | Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory | |
SG11201901668RA (en) | Detection of anomalies in multivariate data | |
SG11201806647VA (en) | Systems and methods for allergen detection | |
SG11201810682PA (en) | Dark field wafer nano-defect inspection system with a singular beam | |
SG11201906425RA (en) | System and method for measuring substrate and film thickness distribution | |
SG11201407668XA (en) | Method and device for detecting an analyte in a body fluid | |
SG11201907208XA (en) | Radiolabeled anti-lag3 antibodies for immuno-pet imaging | |
SG11201908423RA (en) | Optical probe, raman spectroscopy system, and method of using the same |