SG11201810964UA - Sputtering target and production method therefor - Google Patents

Sputtering target and production method therefor

Info

Publication number
SG11201810964UA
SG11201810964UA SG11201810964UA SG11201810964UA SG11201810964UA SG 11201810964U A SG11201810964U A SG 11201810964UA SG 11201810964U A SG11201810964U A SG 11201810964UA SG 11201810964U A SG11201810964U A SG 11201810964UA SG 11201810964U A SG11201810964U A SG 11201810964UA
Authority
SG
Singapore
Prior art keywords
sputtering target
production method
method therefor
less
ppm
Prior art date
Application number
SG11201810964UA
Other languages
English (en)
Inventor
Yasushi Morii
Yoshimasa Koido
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=60579039&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG11201810964U(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201810964UA publication Critical patent/SG11201810964UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
SG11201810964UA 2016-06-07 2017-06-07 Sputtering target and production method therefor SG11201810964UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016113945 2016-06-07
PCT/JP2017/021180 WO2017213185A1 (ja) 2016-06-07 2017-06-07 スパッタリングターゲット及び、その製造方法

Publications (1)

Publication Number Publication Date
SG11201810964UA true SG11201810964UA (en) 2019-01-30

Family

ID=60579039

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201810964UA SG11201810964UA (en) 2016-06-07 2017-06-07 Sputtering target and production method therefor

Country Status (6)

Country Link
US (1) US11236416B2 (de)
EP (1) EP3467142B1 (de)
JP (1) JP6869237B2 (de)
CN (1) CN109312449B (de)
SG (1) SG11201810964UA (de)
WO (1) WO2017213185A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11638943B2 (en) * 2019-04-09 2023-05-02 Jin Yuncheng Enterprise Co., Ltd. Method for manufacturing cold-forged, extruded aluminum alloy tube
WO2021013660A1 (en) * 2019-07-19 2021-01-28 Evatec Ag Piezoelectric coating and deposition process
WO2021019991A1 (ja) 2019-07-31 2021-02-04 株式会社フルヤ金属 スパッタリングターゲット
CN111455223B (zh) * 2019-08-08 2021-10-01 湖南稀土金属材料研究院 铝钪合金靶材及其制备方法
US11872616B2 (en) * 2019-08-21 2024-01-16 Jin Yuncheng Enterprise Co., Ltd. Method for manufacturing cold-forged, extruded aluminum alloy tube
CN113373414B (zh) * 2020-02-25 2023-10-27 湖南东方钪业股份有限公司 一种铝钪合金溅射靶的制备方法及应用
EP4162088A1 (de) * 2020-06-05 2023-04-12 Materion Corporation Aluminium-scandium-verbundstoff, aluminium-scandium-verbundstoff-sputtertarget und verfahren zur herstellung
CN111485207A (zh) * 2020-06-08 2020-08-04 福建阿石创新材料股份有限公司 一种细晶粒均相高钪含量的铝钪合金烧结靶材及其制备方法和应用
TWI744154B (zh) * 2020-12-29 2021-10-21 金允成企業股份有限公司 鋁合金棒材鍛抽成型方法
CN113584333B (zh) * 2021-07-14 2022-05-13 先导薄膜材料有限公司 一种提高铝钪合金靶材均匀性的方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02115364A (ja) * 1988-10-22 1990-04-27 Dowa Mining Co Ltd テルルターゲット及びその製法
JP3560393B2 (ja) * 1995-07-06 2004-09-02 株式会社日鉱マテリアルズ アルミニウム合金スパッタリングターゲットの製造方法
EP0855451A4 (de) 1995-10-12 1999-10-06 Toshiba Kk Drahtfilm, sputtertarget zur herstellung des drahtfilms und elektronische teile, die diesen verwenden
JP3365954B2 (ja) * 1997-04-14 2003-01-14 株式会社神戸製鋼所 半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜および半導体電極用Ａｌ−Ｎｉ−Ｙ 合金薄膜形成用スパッタリングターゲット
US6736947B1 (en) 1997-12-24 2004-05-18 Kabushiki Kaisha Toshiba Sputtering target, A1 interconnection film, and electronic component
US6250362B1 (en) * 1998-03-02 2001-06-26 Alcoa Inc. Method and apparatus for producing a porous metal via spray casting
US6135198A (en) * 1998-03-05 2000-10-24 Aluminum Company Of America Substrate system for spray forming
JP2001230116A (ja) * 1999-12-09 2001-08-24 Sumitomo Electric Ind Ltd 電磁アクチュエータ
JP5038553B2 (ja) * 2000-04-27 2012-10-03 株式会社東芝 スパッタリングターゲットの製造方法
TW541350B (en) 2000-12-29 2003-07-11 Solar Applied Material Technol Method for producing metal target for sputtering
JP2003046250A (ja) 2001-02-28 2003-02-14 Furukawa Electric Co Ltd:The ビア付きビルドアップ用多層基板及びその製造方法
US20040245099A1 (en) 2001-11-26 2004-12-09 Atsushi Hukushima Sputtering target and production method therefor
JP3898043B2 (ja) * 2001-11-30 2007-03-28 株式会社東芝 スパッタリングターゲットとそれを用いた半導体デバイスおよびスパッタリング装置
JP4237479B2 (ja) * 2002-12-25 2009-03-11 株式会社東芝 スパッタリングターゲット、Ａｌ合金膜および電子部品
US20080173543A1 (en) 2007-01-19 2008-07-24 Heraeus Inc. Low oxygen content, crack-free heusler and heusler-like alloys & deposition sources & methods of making same
JP4997448B2 (ja) 2007-12-21 2012-08-08 独立行政法人産業技術総合研究所 窒化物半導体の製造方法および窒化物半導体デバイス
WO2010101160A1 (ja) 2009-03-02 2010-09-10 株式会社神戸製鋼所 Ａｌ合金反射膜、及び、自動車用灯具、照明具、装飾部品、ならびに、Ａｌ合金スパッタリングターゲット
TW201040050A (en) * 2009-05-11 2010-11-16 Univ Nat Central Aluminum scandium alloy film for use in vehicle lamp and production method thereof
CN101924023A (zh) 2009-06-09 2010-12-22 日本派欧尼株式会社 Iii族氮化物半导体的气相生长装置
JP5598948B2 (ja) 2009-07-01 2014-10-01 独立行政法人産業技術総合研究所 圧電体薄膜の製造方法および当該製造方法により製造される圧電体薄膜
DE112010003274T5 (de) 2009-08-12 2012-12-27 Ulvac, Inc. Verfahren zur Herstellung eines Sputtertargets sowie Sputtertarget
JP5681368B2 (ja) * 2010-02-26 2015-03-04 株式会社神戸製鋼所 Ａｌ基合金スパッタリングターゲット
JP5888689B2 (ja) * 2010-07-01 2016-03-22 国立研究開発法人産業技術総合研究所 スカンジウムアルミニウム窒化物膜の製造方法
US20140174908A1 (en) 2011-03-29 2014-06-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Scandium-aluminum alloy sputtering targets
JP5817673B2 (ja) 2011-11-18 2015-11-18 株式会社村田製作所 圧電薄膜共振子及び圧電薄膜の製造方法
CA2773197A1 (en) * 2012-03-27 2013-09-27 Yundong Li Electroplated super abrasive tools with the abrasive particles chemically bonded and deliberately placed, and methods for making the same
AU2013201572B2 (en) * 2013-03-15 2014-12-11 Commonwealth Scientific And Industrial Research Organisation Production of Aluminium-Scandium Alloys
JP5966199B2 (ja) * 2013-05-31 2016-08-10 株式会社デンソー 圧電体薄膜及びその製造方法
JP6461543B2 (ja) 2013-10-08 2019-01-30 株式会社フルヤ金属 アルミニウムと希土類元素との合金ターゲット及びその製造方法
CN104805406B (zh) 2015-04-17 2017-06-06 无锡舒玛天科新能源技术有限公司 铝钪旋转靶材及其制备方法

Also Published As

Publication number Publication date
JPWO2017213185A1 (ja) 2019-04-04
EP3467142A4 (de) 2019-12-11
JP6869237B2 (ja) 2021-05-12
US11236416B2 (en) 2022-02-01
EP3467142B1 (de) 2022-08-03
WO2017213185A1 (ja) 2017-12-14
CN109312449A (zh) 2019-02-05
EP3467142A1 (de) 2019-04-10
CN109312449B (zh) 2022-04-12
US20190161851A1 (en) 2019-05-30

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