SG11201808386RA - Light intensity modulation method - Google Patents

Light intensity modulation method

Info

Publication number
SG11201808386RA
SG11201808386RA SG11201808386RA SG11201808386RA SG11201808386RA SG 11201808386R A SG11201808386R A SG 11201808386RA SG 11201808386R A SG11201808386R A SG 11201808386RA SG 11201808386R A SG11201808386R A SG 11201808386RA SG 11201808386R A SG11201808386R A SG 11201808386RA
Authority
SG
Singapore
Prior art keywords
light intensity
distribution
mask
modulation method
intensity distribution
Prior art date
Application number
SG11201808386RA
Other languages
English (en)
Inventor
Pengchuan Ma
Yiqiang Tian
Original Assignee
Shanghai Micro Electronics Equipment Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Micro Electronics Equipment Group Co Ltd filed Critical Shanghai Micro Electronics Equipment Group Co Ltd
Publication of SG11201808386RA publication Critical patent/SG11201808386RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG11201808386RA 2016-03-31 2017-03-30 Light intensity modulation method SG11201808386RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610200470.1A CN107290935B (zh) 2016-03-31 2016-03-31 一种光强调制方法
PCT/CN2017/078717 WO2017167211A1 (zh) 2016-03-31 2017-03-30 一种光强调制方法

Publications (1)

Publication Number Publication Date
SG11201808386RA true SG11201808386RA (en) 2018-10-30

Family

ID=59963522

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201808386RA SG11201808386RA (en) 2016-03-31 2017-03-30 Light intensity modulation method

Country Status (7)

Country Link
US (1) US10416568B2 (zh)
JP (1) JP6843151B2 (zh)
KR (1) KR102110567B1 (zh)
CN (1) CN107290935B (zh)
SG (1) SG11201808386RA (zh)
TW (1) TWI633386B (zh)
WO (1) WO2017167211A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109657402B (zh) * 2019-01-07 2021-02-26 中国科学院光电技术研究所 一种光强分布的建模方法、装置、电子设备及存储介质
CN110095491B (zh) * 2019-05-09 2021-08-20 上海华力微电子有限公司 一种缺陷检测系统、检测方法及电子束扫描机台
WO2021099408A1 (en) * 2019-11-19 2021-05-27 Asml Holding N.V. Optimization using a non-uniform illumination intensity profile
CN115542679B (zh) * 2022-09-05 2024-04-26 上海镭望光学科技有限公司 调制板透过率分布生成方法、调制板及光刻机照明系统

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JP2000021750A (ja) * 1998-06-30 2000-01-21 Nikon Corp マスクフィルタの設計方法、マスクフィルタ、及び露光装置
JP2001296649A (ja) * 2000-02-07 2001-10-26 Ricoh Opt Ind Co Ltd 濃度分布マスクとその製造方法及び表面形状の形成方法
JP2002100561A (ja) * 2000-07-19 2002-04-05 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2002305137A (ja) * 2001-04-05 2002-10-18 Nikon Corp ドットパターン作成方法、照明装置、露光装置
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CN100576087C (zh) * 2007-05-25 2009-12-30 上海华虹Nec电子有限公司 光刻机照明均匀性补偿片的制造方法
JP2010182703A (ja) * 2009-02-03 2010-08-19 Nikon Corp 補正ユニット、照明光学系、露光装置、およびデバイス製造方法
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CN102109676B (zh) * 2011-02-25 2012-05-23 中国科学院上海光学精密机械研究所 用于光刻照明的多分区光学位相板的设计方法
CN102169295A (zh) * 2011-06-02 2011-08-31 清华大学 确定光刻工艺的光源光照强度分布和掩膜版图形的方法
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CN103926802B (zh) * 2014-04-21 2015-09-16 中国科学院上海光学精密机械研究所 光刻机光源与掩模的联合优化方法
CN105425411B (zh) * 2015-12-31 2017-11-07 中国科学院光电技术研究所 一种应用于超分辨的光束复振幅复合调制装置和方法

Also Published As

Publication number Publication date
TW201736946A (zh) 2017-10-16
US20190113850A1 (en) 2019-04-18
WO2017167211A1 (zh) 2017-10-05
TWI633386B (zh) 2018-08-21
KR102110567B1 (ko) 2020-05-13
JP6843151B2 (ja) 2021-03-17
KR20180132103A (ko) 2018-12-11
CN107290935B (zh) 2019-01-29
JP2019511748A (ja) 2019-04-25
US10416568B2 (en) 2019-09-17
CN107290935A (zh) 2017-10-24

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