SG11201807712YA - Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device - Google Patents
Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor deviceInfo
- Publication number
- SG11201807712YA SG11201807712YA SG11201807712YA SG11201807712YA SG11201807712YA SG 11201807712Y A SG11201807712Y A SG 11201807712YA SG 11201807712Y A SG11201807712Y A SG 11201807712YA SG 11201807712Y A SG11201807712Y A SG 11201807712YA SG 11201807712Y A SG11201807712Y A SG 11201807712YA
- Authority
- SG
- Singapore
- Prior art keywords
- reflective mask
- manufacturing
- mask blank
- multilayer reflective
- reflective film
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title 3
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 230000007547 defect Effects 0.000 abstract 3
- 239000006096 absorbing agent Substances 0.000 abstract 2
- 238000007689 inspection Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000007261 regionalization Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016072287 | 2016-03-31 | ||
| JP2016190721 | 2016-09-29 | ||
| PCT/JP2017/011180 WO2017169973A1 (ja) | 2016-03-31 | 2017-03-21 | 反射型マスクブランクの製造方法、反射型マスクブランク、反射型マスクの製造方法、反射型マスク、及び半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201807712YA true SG11201807712YA (en) | 2018-10-30 |
Family
ID=59964408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201807712YA SG11201807712YA (en) | 2016-03-31 | 2017-03-21 | Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11048159B2 (zh) |
| JP (2) | JP6792901B2 (zh) |
| KR (2) | KR102393311B1 (zh) |
| SG (1) | SG11201807712YA (zh) |
| TW (2) | TWI802031B (zh) |
| WO (1) | WO2017169973A1 (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI684225B (zh) * | 2015-08-28 | 2020-02-01 | 美商克萊譚克公司 | 自定向計量和圖樣分類 |
| WO2019078205A1 (ja) * | 2017-10-17 | 2019-04-25 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| DE102017219217B4 (de) * | 2017-10-26 | 2021-03-25 | Carl Zeiss Smt Gmbh | Masken für die Mikrolithographie, Verfahren zur Bestimmung von Kantenpositionen der Bilder der Strukturen einer derartigen Maske und System zur Durchführung eines derartigen Verfahrens |
| JP7310472B2 (ja) * | 2019-09-13 | 2023-07-19 | 信越化学工業株式会社 | 反射型マスクブランクの製造方法 |
| TWI739376B (zh) * | 2019-12-13 | 2021-09-11 | 南臺學校財團法人南臺科技大學 | 光罩之保護膜的檢測方法及檢測系統 |
| US20220308438A1 (en) | 2021-03-24 | 2022-09-29 | Hoya Corporation | Method for manufacturing multilayered-reflective-film-provided substrate, reflective mask blank and method for manufacturing the same, and method for manufacturing reflective mask |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004170948A (ja) * | 2002-10-30 | 2004-06-17 | Nikon Corp | パターン転写用マスク、マスク作製方法及び露光方法 |
| US7495307B2 (en) | 2003-11-20 | 2009-02-24 | Ideal Star Inc. | Columnar electric device |
| JP5327046B2 (ja) | 2007-04-17 | 2013-10-30 | 旭硝子株式会社 | Ｅｕｖマスクブランク |
| JP2009251412A (ja) * | 2008-04-09 | 2009-10-29 | Renesas Technology Corp | マスクブランク検査装置および方法、反射型露光マスクの製造方法ならびに半導体集積回路の製造方法 |
| US8372564B2 (en) * | 2008-05-09 | 2013-02-12 | Hoya Corporation | Reflective mask, reflective mask blank and method of manufacturing reflective mask |
| JP2013131728A (ja) | 2011-12-22 | 2013-07-04 | Dainippon Printing Co Ltd | 反射型マスク用基板、反射型マスクブランクス、反射型マスク、および、それらの製造方法 |
| JP6460617B2 (ja) * | 2012-02-10 | 2019-01-30 | Hoya株式会社 | 反射型マスクブランク、反射型マスクの製造方法、及び反射型マスクブランクの製造方法 |
| JP6460619B2 (ja) * | 2012-03-12 | 2019-01-30 | Hoya株式会社 | 反射型マスクブランク及び反射型マスクの製造方法 |
| JP2013222811A (ja) | 2012-04-16 | 2013-10-28 | Lasertec Corp | Ｅｕｖマスクブランクス、マスクの製造方法、及びアライメント方法 |
| JP6106413B2 (ja) * | 2012-11-13 | 2017-03-29 | Hoya株式会社 | 反射型マスクブランク及び反射型マスクの製造方法 |
| TWI625592B (zh) * | 2012-12-28 | 2018-06-01 | Hoya Corp | Substrate for substrate material, substrate with multilayer reflective film, reflective mask material, reflective mask, method for manufacturing substrate for mask material, method for manufacturing substrate with multilayer reflective film, and method for manufacturing semiconductor device |
| KR102219307B1 (ko) | 2013-02-22 | 2021-02-23 | 호야 가부시키가이샤 | 반사형 마스크블랭크의 제조방법, 및 반사형 마스크의 제조방법 |
| WO2015046095A1 (ja) | 2013-09-27 | 2015-04-02 | Hoya株式会社 | 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法 |
| JP6282844B2 (ja) * | 2013-11-06 | 2018-02-21 | Hoya株式会社 | 薄膜付き基板及び転写用マスクの製造方法 |
| WO2015141230A1 (ja) | 2014-03-20 | 2015-09-24 | 凸版印刷株式会社 | 反射型フォトマスクブランク、反射型フォトマスク、反射型フォトマスクの製造方法、露光方法及び露光装置 |
| WO2015146140A1 (ja) | 2014-03-24 | 2015-10-01 | 凸版印刷株式会社 | Ｅｕｖマスクの位相欠陥評価方法、ｅｕｖマスクの製造方法、ｅｕｖマスクブランク及びｅｕｖマスク |
| JP6815995B2 (ja) * | 2015-06-17 | 2021-01-20 | Hoya株式会社 | 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
-
2017
- 2017-03-21 KR KR1020187026596A patent/KR102393311B1/ko active IP Right Grant
- 2017-03-21 SG SG11201807712YA patent/SG11201807712YA/en unknown
- 2017-03-21 JP JP2018509085A patent/JP6792901B2/ja active Active
- 2017-03-21 WO PCT/JP2017/011180 patent/WO2017169973A1/ja active Application Filing
- 2017-03-21 KR KR1020227014297A patent/KR102646681B1/ko active IP Right Grant
- 2017-03-21 US US16/084,332 patent/US11048159B2/en active Active
- 2017-03-28 TW TW110136941A patent/TWI802031B/zh active
- 2017-03-28 TW TW106110262A patent/TWI743100B/zh active
-
2020
- 2020-11-03 JP JP2020184028A patent/JP7286604B2/ja active Active
-
2021
- 2021-05-20 US US17/325,627 patent/US11852964B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP7286604B2 (ja) | 2023-06-05 |
| TW202205005A (zh) | 2022-02-01 |
| US11048159B2 (en) | 2021-06-29 |
| TWI802031B (zh) | 2023-05-11 |
| JP2021012399A (ja) | 2021-02-04 |
| KR20180130495A (ko) | 2018-12-07 |
| JPWO2017169973A1 (ja) | 2019-03-14 |
| KR102393311B1 (ko) | 2022-05-02 |
| US20210294202A1 (en) | 2021-09-23 |
| KR20220065071A (ko) | 2022-05-19 |
| US11852964B2 (en) | 2023-12-26 |
| JP6792901B2 (ja) | 2020-12-02 |
| TW201802571A (zh) | 2018-01-16 |
| WO2017169973A1 (ja) | 2017-10-05 |
| KR102646681B1 (ko) | 2024-03-12 |
| US20190079382A1 (en) | 2019-03-14 |
| TWI743100B (zh) | 2021-10-21 |
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