SG11201806511XA - Device and method for bonding substrates - Google Patents
Device and method for bonding substratesInfo
- Publication number
- SG11201806511XA SG11201806511XA SG11201806511XA SG11201806511XA SG11201806511XA SG 11201806511X A SG11201806511X A SG 11201806511XA SG 11201806511X A SG11201806511X A SG 11201806511XA SG 11201806511X A SG11201806511X A SG 11201806511XA SG 11201806511X A SG11201806511X A SG 11201806511XA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- holding
- bonding
- curvature
- substrates
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 9
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2016/056249 WO2017162272A1 (de) | 2016-03-22 | 2016-03-22 | Vorrichtung und verfahren zum bonden von substraten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201806511XA true SG11201806511XA (en) | 2018-08-30 |
Family
ID=55589859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201806511XA SG11201806511XA (en) | 2016-03-22 | 2016-03-22 | Device and method for bonding substrates |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US20190019678A1 (zh) |
| EP (2) | EP3433875B1 (zh) |
| JP (1) | JP6856659B2 (zh) |
| KR (4) | KR20230167447A (zh) |
| CN (5) | CN118099068A (zh) |
| SG (1) | SG11201806511XA (zh) |
| TW (5) | TWI672733B (zh) |
| WO (1) | WO2017162272A1 (zh) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3433875B1 (de) * | 2016-03-22 | 2022-05-04 | EV Group E. Thallner GmbH | Verfahren zum bonden von substraten |
| JP6727069B2 (ja) * | 2016-08-09 | 2020-07-22 | 東京エレクトロン株式会社 | 接合装置および接合システム |
| CN109496345B (zh) | 2016-08-12 | 2023-07-18 | Ev 集团 E·索尔纳有限责任公司 | 用于经控制地接合衬底的方法和样本支架 |
| JP6843232B2 (ja) | 2016-09-29 | 2021-03-17 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | ２つの基板をボンディングするための装置および方法 |
| EP3590130A1 (de) | 2017-03-02 | 2020-01-08 | EV Group E. Thallner GmbH | Verfahren und vorrichtung zum bonden von chips |
| KR102396022B1 (ko) | 2017-03-16 | 2022-05-09 | 에베 그룹 에. 탈너 게엠베하 | 적어도 세 개의 기판들을 결합하기 위한 방법 |
| TWI828760B (zh) * | 2018-10-25 | 2024-01-11 | 日商尼康股份有限公司 | 基板貼合裝置、參數計算裝置、基板貼合方法及參數計算方法 |
| AT525156B1 (de) * | 2019-05-13 | 2023-02-15 | Suss Microtec Lithography Gmbh | Bondvorrichtung sowie Verfahren zum Bonden von Substraten |
| AT525844A1 (de) * | 2019-05-13 | 2023-07-15 | Suss Microtec Lithography Gmbh | Bondvorrichtung sowie Verfahren zum Bonden von Substraten |
| US11094575B2 (en) * | 2019-06-03 | 2021-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Simultaneous bonding approach for high quality wafer stacking applications |
| KR102566141B1 (ko) * | 2019-07-02 | 2023-08-11 | 삼성전자주식회사 | 웨이퍼 본딩 방법 및 웨이퍼 본딩 장치 |
| JP2022552053A (ja) | 2019-08-23 | 2022-12-15 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 基板をアライメントする方法および装置 |
| JP7286493B2 (ja) * | 2019-09-13 | 2023-06-05 | キオクシア株式会社 | 基板貼合装置 |
| EP4055624B1 (de) | 2019-11-08 | 2023-09-27 | EV Group E. Thallner GmbH | Vorrichtung und verfahren zum verbinden von substraten |
| JP2021086989A (ja) * | 2019-11-29 | 2021-06-03 | 東京エレクトロン株式会社 | 真空チャック、及び接合装置 |
| JP7471862B2 (ja) * | 2020-02-27 | 2024-04-22 | キオクシア株式会社 | 貼合装置および貼合方法 |
| CN115605987A (zh) | 2020-06-29 | 2023-01-13 | Ev 集团 E·索尔纳有限责任公司（At） | 基底保持器以及用于固定和键合基底的方法 |
| KR20220167376A (ko) | 2020-06-29 | 2022-12-20 | 에베 그룹 에. 탈너 게엠베하 | 기판 접합 방법 및 장치 |
| CN115398133A (zh) | 2020-06-30 | 2022-11-25 | Ev 集团 E·索尔纳有限责任公司 | 用于对准基板的装置和方法 |
| JP7203918B2 (ja) * | 2020-09-18 | 2023-01-13 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法及びコンピュータ記憶媒体 |
| CN116457916A (zh) | 2021-02-01 | 2023-07-18 | Ev 集团 E·索尔纳有限责任公司 | 基底支架以及制造用于接合的基底支架的方法 |
| CN114975077B (zh) * | 2021-08-04 | 2023-09-19 | 江苏汉印机电科技股份有限公司 | SiC外延片的加工设备及其方法 |
| TWI802956B (zh) * | 2021-08-11 | 2023-05-21 | 日商雅馬哈智能機器控股股份有限公司 | 部材間接合裝置以及接合部材製造方法 |
| WO2024046577A1 (de) | 2022-09-02 | 2024-03-07 | Ev Group E. Thallner Gmbh | Verfahren und vorrichtung zum beeinflussen einer bondwelle beim bonden |
| WO2024046578A1 (de) | 2022-09-02 | 2024-03-07 | Ev Group E. Thallner Gmbh | Vakuumsubstrathalter mit optimierter vakuumdichtung |
| DE102022127274B4 (de) | 2022-10-18 | 2024-05-16 | Tesa Se | Applikationselement und Verfahren zur zerstörungsfreien Setzkontrolle beim Applizieren von Klebeelementen |
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| JP2015119088A (ja) | 2013-12-19 | 2015-06-25 | 東京エレクトロン株式会社 | 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム |
| JP6282861B2 (ja) | 2013-12-20 | 2018-02-21 | 住友ゴム工業株式会社 | トラック・バスタイヤ |
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| JP6407803B2 (ja) * | 2015-06-16 | 2018-10-17 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
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| JP6616181B2 (ja) * | 2015-12-25 | 2019-12-04 | 東京エレクトロン株式会社 | 接合装置 |
| EP3227907B1 (de) | 2016-02-16 | 2018-05-23 | Ev Group E. Thallner GmbH | Verfahren zum bonden von substraten |
| WO2017155002A1 (ja) * | 2016-03-11 | 2017-09-14 | ボンドテック株式会社 | 基板接合方法 |
| EP3433875B1 (de) * | 2016-03-22 | 2022-05-04 | EV Group E. Thallner GmbH | Verfahren zum bonden von substraten |
-
2016
- 2016-03-22 EP EP16711614.4A patent/EP3433875B1/de active Active
- 2016-03-22 CN CN202410270903.5A patent/CN118099068A/zh active Pending
- 2016-03-22 CN CN202410270904.XA patent/CN118098939A/zh active Pending
- 2016-03-22 CN CN201680083320.5A patent/CN108701592B/zh active Active
- 2016-03-22 US US16/080,156 patent/US20190019678A1/en active Pending
- 2016-03-22 KR KR1020237041133A patent/KR20230167447A/ko active Application Filing
- 2016-03-22 CN CN202410270907.3A patent/CN118099069A/zh active Pending
- 2016-03-22 SG SG11201806511XA patent/SG11201806511XA/en unknown
- 2016-03-22 KR KR1020227004322A patent/KR102609698B1/ko active IP Right Grant
- 2016-03-22 KR KR1020237012034A patent/KR20230052997A/ko not_active Application Discontinuation
- 2016-03-22 JP JP2018546605A patent/JP6856659B2/ja active Active
- 2016-03-22 WO PCT/EP2016/056249 patent/WO2017162272A1/de active Application Filing
- 2016-03-22 KR KR1020187024947A patent/KR102378167B1/ko active IP Right Review Request
- 2016-03-22 CN CN202410270900.1A patent/CN118098938A/zh active Pending
- 2016-03-22 EP EP22163709.3A patent/EP4036956A1/de active Pending
-
2017
- 2017-03-22 TW TW106109484A patent/TWI672733B/zh active
- 2017-03-22 TW TW108113656A patent/TWI714059B/zh active
- 2017-03-22 TW TW108113659A patent/TWI714062B/zh active
- 2017-03-22 TW TW108113657A patent/TWI714060B/zh active
- 2017-03-22 TW TW108113658A patent/TWI714061B/zh active
-
2019
- 2019-04-17 US US16/386,580 patent/US11282706B2/en active Active
-
2021
- 2021-12-14 US US17/550,008 patent/US11955339B2/en active Active
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