SA518400185B1 - حز غير متماثل - Google Patents

حز غير متماثل

Info

Publication number
SA518400185B1
SA518400185B1 SA518400185A SA518400185A SA518400185B1 SA 518400185 B1 SA518400185 B1 SA 518400185B1 SA 518400185 A SA518400185 A SA 518400185A SA 518400185 A SA518400185 A SA 518400185A SA 518400185 B1 SA518400185 B1 SA 518400185B1
Authority
SA
Saudi Arabia
Prior art keywords
groove
face
asymmetric groove
semiconductor material
coated
Prior art date
Application number
SA518400185A
Other languages
English (en)
Inventor
جون توبينج إلكسندر
Original Assignee
باور رول ليمتد
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by باور رول ليمتد filed Critical باور رول ليمتد
Publication of SA518400185B1 publication Critical patent/SA518400185B1/ar

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Led Devices (AREA)
  • Magnetic Heads (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

يتعلق الاختراع الحالي بجهاز إلكتروني ضوئي (110، 210) يشتمل على ركيزة (112، 212) تشتمل على حز (114، 214أ، 214ب) له وجه أول (113أ، 213أأ، 213ب أ) ووجه ثان (113ب، 216أأ، 216ب أ). الوجه الأول (113أ، 213أأ، 213ب أ) للحز (114، 214أ، 214ب) مغطى بمادة شبه موصلة (120، 220) والوجه الثاني (113ب، 216أأ، 216ب أ) للحز (114، 214أ، 214ب) مغطى بمادة موصلة (118، 218). المادة الموصلة (118، 218) والمادة شبه الموصلة (120، 220) يتلامسان مع مادة شبه موصلة أخرى (122، 222) في الحز (114، 214أ، 214ب). يكون الوجه الأول (113أ، 213أأ، 213ب أ) للحز (114، 214أ، 214ب) أطول من الوجه الثاني (113ب، 216أأ، 216ب أ) للحز (114، 214أ، 214ب) أو يكون الوجه الثاني (113ب، 216أأ، 216ب أ) للحز(114، 214أ، 214ب) أطول من الوجه الأول (113أ، 213أأ، 213ب أ) للحز (114، 214أ، 214ب). شكل 1.
SA518400185A 2016-04-07 2018-10-06 حز غير متماثل SA518400185B1 (ar)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB1605918.0A GB2549134B (en) 2016-04-07 2016-04-07 Asymmetric groove
PCT/GB2017/050974 WO2017174997A1 (en) 2016-04-07 2017-04-06 Asymmetric groove

Publications (1)

Publication Number Publication Date
SA518400185B1 true SA518400185B1 (ar) 2022-05-09

Family

ID=58548756

Family Applications (1)

Application Number Title Priority Date Filing Date
SA518400185A SA518400185B1 (ar) 2016-04-07 2018-10-06 حز غير متماثل

Country Status (6)

Country Link
US (1) US10797190B2 (ar)
EP (1) EP3440710B1 (ar)
ES (1) ES2920489T3 (ar)
GB (1) GB2549134B (ar)
SA (1) SA518400185B1 (ar)
WO (1) WO2017174997A1 (ar)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201301683D0 (en) 2013-01-30 2013-03-13 Big Solar Ltd Method of creating non-conductive delineations with a selective coating technology on a structured surface
GB2549133B (en) 2016-04-07 2020-02-19 Power Roll Ltd Gap between semiconductors
GB2549132A (en) 2016-04-07 2017-10-11 Big Solar Ltd Aperture in a semiconductor
GB201617276D0 (en) 2016-10-11 2016-11-23 Big Solar Limited Energy storage
GB202004534D0 (en) * 2020-03-27 2020-05-13 Power Roll Ltd Substrate for a two-terminal device
GB202004533D0 (en) * 2020-03-27 2020-05-13 Power Roll Ltd A two-terminal device

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3948682A (en) 1974-10-31 1976-04-06 Ninel Mineevna Bordina Semiconductor photoelectric generator
US4110122A (en) 1976-05-26 1978-08-29 Massachusetts Institute Of Technology High-intensity, solid-state-solar cell device
US4283589A (en) 1978-05-01 1981-08-11 Massachusetts Institute Of Technology High-intensity, solid-state solar cell
US4295002A (en) 1980-06-23 1981-10-13 International Business Machines Corporation Heterojunction V-groove multijunction solar cell
US4335503A (en) 1980-12-24 1982-06-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of making a high voltage V-groove solar cell
US4376872A (en) * 1980-12-24 1983-03-15 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration High voltage V-groove solar cell
US4379944A (en) * 1981-02-05 1983-04-12 Varian Associates, Inc. Grooved solar cell for deployment at set angle
JPS6135573A (ja) 1984-07-27 1986-02-20 Matsushita Electric Ind Co Ltd 光起電力素子の製造法
JPS6486053A (en) 1987-09-29 1989-03-30 Toshiba Corp Sensitive element
US5067985A (en) 1990-06-08 1991-11-26 The United States Of America As Represented By The Secretary Of The Air Force Back-contact vertical-junction solar cell and method
JP2804839B2 (ja) 1990-10-17 1998-09-30 三菱電機株式会社 半導体装置の製造方法
US5585957A (en) 1993-03-25 1996-12-17 Nippon Telegraph And Telephone Corporation Method for producing various semiconductor optical devices of differing optical characteristics
US6084175A (en) * 1993-05-20 2000-07-04 Amoco/Enron Solar Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts
US6090661A (en) 1998-03-19 2000-07-18 Lsi Logic Corporation Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls
DE19937724C1 (de) 1999-08-10 2000-12-07 Bosch Gmbh Robert Lichtemittierende Matrixanzeige sowie Verfahren zur Herstellung einer lichtemittierenden Matrixanzeige
DE19943720A1 (de) 1999-09-02 2000-05-25 Wagemann Hans Guenther Seriell verschaltete Solarzelle
US6762359B2 (en) 2001-01-15 2004-07-13 Fuji Machine Mfg. Co., Ltd. Photovoltaic panel and method of producing same
DE10103114A1 (de) 2001-01-24 2002-10-31 Univ Stuttgart Herstellen elektrischer Verbindungen in Substratöffnungen von Schaltungseinheiten mittels gerichteter Abscheidung leitfähiger Schichten
CA2456671C (en) 2001-08-13 2009-09-22 Josuke Nakata Light emitting or light receiving semiconductor module and making method thereof
AU2003256235A1 (en) 2003-08-01 2005-02-15 Grenzone Pte Ltd An improved thin-film photovoltaic module
US20050115602A1 (en) * 2003-11-28 2005-06-02 Kyocera Corporation Photo-electric conversion cell and array, and photo-electric generation system
US7902453B2 (en) 2005-07-27 2011-03-08 Rensselaer Polytechnic Institute Edge illumination photovoltaic devices and methods of making same
DE102006019534A1 (de) 2006-04-27 2007-11-08 CiS Institut für Mikrosensorik gGmbH Mikrosensor
WO2008143721A2 (en) 2007-02-12 2008-11-27 Solasta, Inc. Photovoltaic cell with reduced hot-carrier cooling
CN101715592B (zh) 2007-05-31 2013-10-30 无限科技全球公司 可寻址或静态、发光、发电或其它电子装置
US8013238B2 (en) 2007-07-09 2011-09-06 Energy Related Devices, Inc. Micro concentrators elastically coupled with spherical photovoltaic cells
JP2009088203A (ja) 2007-09-28 2009-04-23 Sanyo Electric Co Ltd 太陽電池、太陽電池モジュール及び太陽電池の製造方法
US8981226B2 (en) 2007-10-24 2015-03-17 Sekisui Chemical Co., Ltd. Electrically conductive microparticle, anisotropic electrically conductive material, connection structure, and method for production of electrically conductive microparticle
US20100285631A1 (en) * 2008-01-02 2010-11-11 Blue Himmel Solar Pty Ltd Method of selectively doping a semiconductor material for fabricating a solar cell
US20100089443A1 (en) 2008-09-24 2010-04-15 Massachusetts Institute Of Technology Photon processing with nanopatterned materials
AU2010235273A1 (en) 2009-04-06 2011-11-10 Ensol As Photovoltaic cell
JP2010272466A (ja) 2009-05-25 2010-12-02 Fujifilm Corp 透明導電体及びその製造方法
EP2256820A3 (en) 2009-05-25 2011-04-20 Nxp B.V. Photo-electronic device comprising a vertical p-n or p-i-n junction and manufacturing method thereof
US9581870B2 (en) 2009-08-13 2017-02-28 3M Innovative Properties Company Conducting film or electrode with improved optical and electrical performance for display and lighting devices and solar cells
TWI539631B (zh) 2009-09-15 2016-06-21 無限科技全球公司 製造發光、光伏或其它電子裝置及系統的方法
NL2004065C2 (en) 2010-01-06 2011-07-07 Stichting Energie Solar panel module and method for manufacturing such a solar panel module.
US8952519B2 (en) 2010-01-13 2015-02-10 Chia-Sheng Lin Chip package and fabrication method thereof
KR101060239B1 (ko) 2010-08-26 2011-08-29 한국과학기술원 집적형 박막 광기전력 소자 및 그의 제조 방법
KR101699310B1 (ko) 2010-12-17 2017-02-13 엘지전자 주식회사 태양 전지 및 그 제조 방법
PL2724380T3 (pl) 2011-06-23 2017-03-31 Big Solar Limited Sposób wykonywania struktury obejmujący etapy powlekania i odpowiednie urządzenie
CN103178137B (zh) * 2011-12-22 2016-04-13 清华大学 太阳能电池组
US9876129B2 (en) 2012-05-10 2018-01-23 International Business Machines Corporation Cone-shaped holes for high efficiency thin film solar cells
CN103579407A (zh) 2012-07-26 2014-02-12 聚日（苏州）科技有限公司 一种太阳能电池及其制造方法
GB201301683D0 (en) * 2013-01-30 2013-03-13 Big Solar Ltd Method of creating non-conductive delineations with a selective coating technology on a structured surface
US20140261648A1 (en) * 2013-03-14 2014-09-18 Q1 Nanosystems Corporation Methods for manufacturing three-dimensional metamaterial devices with photovoltaic bristles
GB201405662D0 (en) * 2014-03-28 2014-05-14 Big Solar Ltd Apparatus and method
GB2549132A (en) 2016-04-07 2017-10-11 Big Solar Ltd Aperture in a semiconductor
GB2549133B (en) 2016-04-07 2020-02-19 Power Roll Ltd Gap between semiconductors

Also Published As

Publication number Publication date
US10797190B2 (en) 2020-10-06
ES2920489T3 (es) 2022-08-04
WO2017174997A1 (en) 2017-10-12
EP3440710A1 (en) 2019-02-13
US20190088807A1 (en) 2019-03-21
GB2549134A (en) 2017-10-11
EP3440710B1 (en) 2022-05-11
GB2549134B (en) 2020-02-12

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