SG11201805327PA - Heating and cooling apparatus for bonding machine and manufacturing method thereof - Google Patents
Heating and cooling apparatus for bonding machine and manufacturing method thereofInfo
- Publication number
- SG11201805327PA SG11201805327PA SG11201805327PA SG11201805327PA SG11201805327PA SG 11201805327P A SG11201805327P A SG 11201805327PA SG 11201805327P A SG11201805327P A SG 11201805327PA SG 11201805327P A SG11201805327P A SG 11201805327PA SG 11201805327P A SG11201805327P A SG 11201805327PA
- Authority
- SG
- Singapore
- Prior art keywords
- heating
- heating wire
- cooling
- cooling pipe
- bonding machine
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K9/00—Arc welding or cutting
- B23K9/16—Arc welding or cutting making use of shielding gas
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3033—Ni as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K9/00—Arc welding or cutting
- B23K9/007—Spot arc welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Die Bonding (AREA)
- Wire Bonding (AREA)
- Arc Welding In General (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201511025791.4A CN106925867B (zh) | 2015-12-30 | 2015-12-30 | 一种键合机加热冷却装置及其制作方法 |
PCT/CN2016/111778 WO2017114315A1 (zh) | 2015-12-30 | 2016-12-23 | 一种键合机加热冷却装置及其制作方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201805327PA true SG11201805327PA (en) | 2018-07-30 |
Family
ID=59224482
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201805327PA SG11201805327PA (en) | 2015-12-30 | 2016-12-23 | Heating and cooling apparatus for bonding machine and manufacturing method thereof |
Country Status (7)
Country | Link |
---|---|
US (1) | US20190022788A1 (zh) |
JP (1) | JP6791969B2 (zh) |
KR (1) | KR20180095664A (zh) |
CN (1) | CN106925867B (zh) |
SG (1) | SG11201805327PA (zh) |
TW (1) | TWI614079B (zh) |
WO (1) | WO2017114315A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111613544B (zh) * | 2020-06-04 | 2023-03-10 | 山东晶升电子科技有限公司 | 真空晶圆键合机 |
CN115394689B (zh) * | 2022-09-05 | 2023-09-01 | 江苏富乐华功率半导体研究院有限公司 | 一种功率半导体器件热压烧结装置 |
CN117995698B (zh) * | 2024-01-18 | 2024-07-09 | 芯笙半导体科技(上海)有限公司 | 一种真空用热压板及半导体产品真空热压装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100532322B1 (ko) * | 2003-06-04 | 2005-11-29 | 삼성전자주식회사 | 웨이퍼 베이킹 플레이트의 냉각 장치 |
JP4133958B2 (ja) * | 2004-08-04 | 2008-08-13 | 日本発条株式会社 | ワークを加熱または冷却するための装置と、その製造方法 |
JP4448749B2 (ja) * | 2004-09-16 | 2010-04-14 | 神港精機株式会社 | 加熱及び冷却装置 |
JP2007035886A (ja) * | 2005-07-26 | 2007-02-08 | Ngk Insulators Ltd | 給電部材及びそれを用いた半導体製造装置 |
CN101090082A (zh) * | 2006-06-15 | 2007-12-19 | 中国科学院半导体研究所 | 多功能半导体晶片键合装置 |
CN100570815C (zh) * | 2007-01-23 | 2009-12-16 | 中芯国际集成电路制造(上海)有限公司 | 一种芯片键合机台及其加热板 |
JP2010114208A (ja) * | 2008-11-05 | 2010-05-20 | Nikon Corp | 冷却装置および接合システム |
CN101695785A (zh) * | 2009-09-29 | 2010-04-21 | 陈亚 | 一种钛合金与不锈钢的真空焊接方法 |
JP5892685B2 (ja) * | 2011-06-28 | 2016-03-23 | アピックヤマダ株式会社 | 圧着装置および圧着方法 |
CN102502481B (zh) * | 2011-11-03 | 2014-09-03 | 中国科学院半导体研究所 | 基于局域加热技术的圆片级低温键合系统及装置 |
CN103426793B (zh) * | 2012-05-24 | 2016-02-03 | 沈阳芯源微电子设备有限公司 | 基板冷热处理装置 |
US10199350B2 (en) * | 2012-05-25 | 2019-02-05 | Asm Technology Singapore Pte Ltd | Apparatus for heating a substrate during die bonding |
US20140069989A1 (en) * | 2012-09-13 | 2014-03-13 | Texas Instruments Incorporated | Thin Semiconductor Chip Mounting |
CN103855039A (zh) * | 2012-11-28 | 2014-06-11 | 西安晶捷电子技术有限公司 | 一种bga加热炉结构 |
JP5980147B2 (ja) * | 2013-03-08 | 2016-08-31 | 日本発條株式会社 | 基板支持装置 |
CN104217976A (zh) * | 2013-05-31 | 2014-12-17 | 无锡华润安盛科技有限公司 | 一种键合加热装置及加热方法 |
JP5590206B2 (ja) * | 2013-09-20 | 2014-09-17 | 日本軽金属株式会社 | 伝熱板の製造方法 |
DE102013113052A1 (de) * | 2013-11-26 | 2015-05-28 | Aixtron Se | Heizeinrichtung für einen CVD-Reaktor |
CN204789075U (zh) * | 2015-04-22 | 2015-11-18 | 郑州工匠机械设备有限公司 | 一种高聚物真空压片设备 |
CN104878370A (zh) * | 2015-05-29 | 2015-09-02 | 沈阳拓荆科技有限公司 | 一种分体式可控温加热盘结构 |
CN105081590B (zh) * | 2015-07-31 | 2017-06-09 | 湘潭电机股份有限公司 | 一种钎焊结构的冷板及制造方法 |
-
2015
- 2015-12-30 CN CN201511025791.4A patent/CN106925867B/zh active Active
-
2016
- 2016-12-23 KR KR1020187020545A patent/KR20180095664A/ko not_active Application Discontinuation
- 2016-12-23 US US16/067,254 patent/US20190022788A1/en not_active Abandoned
- 2016-12-23 JP JP2018534560A patent/JP6791969B2/ja active Active
- 2016-12-23 SG SG11201805327PA patent/SG11201805327PA/en unknown
- 2016-12-23 WO PCT/CN2016/111778 patent/WO2017114315A1/zh active Application Filing
- 2016-12-27 TW TW105143410A patent/TWI614079B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN106925867A (zh) | 2017-07-07 |
CN106925867B (zh) | 2019-09-17 |
WO2017114315A1 (zh) | 2017-07-06 |
JP6791969B2 (ja) | 2020-11-25 |
TW201722596A (zh) | 2017-07-01 |
JP2019507494A (ja) | 2019-03-14 |
KR20180095664A (ko) | 2018-08-27 |
US20190022788A1 (en) | 2019-01-24 |
TWI614079B (zh) | 2018-02-11 |
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