SG11201803619VA - Three-dimensional memory apparatuses and methods of use - Google Patents

Three-dimensional memory apparatuses and methods of use

Info

Publication number
SG11201803619VA
SG11201803619VA SG11201803619VA SG11201803619VA SG11201803619VA SG 11201803619V A SG11201803619V A SG 11201803619VA SG 11201803619V A SG11201803619V A SG 11201803619VA SG 11201803619V A SG11201803619V A SG 11201803619VA SG 11201803619V A SG11201803619V A SG 11201803619VA
Authority
SG
Singapore
Prior art keywords
methods
dimensional memory
memory apparatuses
apparatuses
dimensional
Prior art date
Application number
SG11201803619VA
Other languages
English (en)
Inventor
Fabio Pellizzer
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG11201803619VA publication Critical patent/SG11201803619VA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0026—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0023—Address circuits or decoders
    • G11C13/0028—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H10B63/845—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays the switching components being connected to a common vertical conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H10N70/235—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect between different crystalline phases, e.g. cubic and hexagonal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0073—Write using bi-directional cell biasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
SG11201803619VA 2015-11-04 2016-10-19 Three-dimensional memory apparatuses and methods of use SG11201803619VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/932,707 US9978810B2 (en) 2015-11-04 2015-11-04 Three-dimensional memory apparatuses and methods of use
PCT/US2016/057649 WO2017078932A1 (en) 2015-11-04 2016-10-19 Three-dimensional memory apparatuses and methods of use

Publications (1)

Publication Number Publication Date
SG11201803619VA true SG11201803619VA (en) 2018-05-30

Family

ID=58638305

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201803619VA SG11201803619VA (en) 2015-11-04 2016-10-19 Three-dimensional memory apparatuses and methods of use

Country Status (8)

Country Link
US (4) US9978810B2 (de)
EP (1) EP3371837B1 (de)
JP (1) JP6783306B2 (de)
KR (1) KR102106726B1 (de)
CN (2) CN116153370A (de)
SG (1) SG11201803619VA (de)
TW (1) TWI677087B (de)
WO (1) WO2017078932A1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10134470B2 (en) 2015-11-04 2018-11-20 Micron Technology, Inc. Apparatuses and methods including memory and operation of same
US9978810B2 (en) 2015-11-04 2018-05-22 Micron Technology, Inc. Three-dimensional memory apparatuses and methods of use
US10446226B2 (en) 2016-08-08 2019-10-15 Micron Technology, Inc. Apparatuses including multi-level memory cells and methods of operation of same
US10157670B2 (en) 2016-10-28 2018-12-18 Micron Technology, Inc. Apparatuses including memory cells and methods of operation of same
KR102673120B1 (ko) * 2016-12-05 2024-06-05 삼성전자주식회사 반도체 장치 및 그 제조 방법
US10096655B1 (en) 2017-04-07 2018-10-09 Micron Technology, Inc. Three dimensional memory array
US10263039B2 (en) 2017-06-26 2019-04-16 Micron Technology, Inc. Memory cells having resistors and formation of the same
US10424728B2 (en) 2017-08-25 2019-09-24 Micron Technology, Inc. Self-selecting memory cell with dielectric barrier
US10461125B2 (en) 2017-08-29 2019-10-29 Micron Technology, Inc. Three dimensional memory arrays
US10573362B2 (en) 2017-08-29 2020-02-25 Micron Technology, Inc. Decode circuitry coupled to a memory array
US10490602B2 (en) 2017-09-21 2019-11-26 Micron Technology, Inc. Three dimensional memory arrays
US10686129B2 (en) 2017-11-29 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Resistive random access memory device
US10797107B2 (en) 2018-02-27 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory device including phase change material layers and method for manufacturing thereof
US10593399B2 (en) 2018-03-19 2020-03-17 Micron Technology, Inc. Self-selecting memory array with horizontal bit lines
US10803939B2 (en) * 2018-08-22 2020-10-13 Micron Technology, Inc. Techniques for programming a memory cell
JP2020047339A (ja) * 2018-09-18 2020-03-26 キオクシア株式会社 メモリシステム
US11631717B2 (en) * 2018-09-28 2023-04-18 Intel Corporation 3D memory array with memory cells having a 3D selector and a storage component
US10593730B1 (en) 2018-10-10 2020-03-17 Micron Technology, Inc. Three-dimensional memory array
US11444243B2 (en) 2019-10-28 2022-09-13 Micron Technology, Inc. Electronic devices comprising metal oxide materials and related methods and systems
TWI760924B (zh) 2019-12-03 2022-04-11 美商美光科技公司 用於存取記憶體單元之方法及系統
KR20220095255A (ko) * 2019-12-03 2022-07-06 마이크론 테크놀로지, 인크 메모리 셀에 액세스하기 위한 방법 및 시스템
KR102254032B1 (ko) * 2019-12-26 2021-05-20 한양대학교 산학협력단 정공 주입 소거 방식을 지원하는 3차원 플래시 메모리 및 그 제조 방법
US11538862B2 (en) * 2020-06-18 2022-12-27 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional memory device and manufacturing method thereof
KR102684721B1 (ko) * 2020-07-28 2024-07-12 삼성전자주식회사 저항성 메모리 소자
US11929124B2 (en) 2020-11-11 2024-03-12 Micron Technology, Inc. Method and system for accessing memory cells
US11342382B1 (en) * 2020-12-11 2022-05-24 Micron Technology, Inc. Capacitive pillar architecture for a memory array
KR102526214B1 (ko) * 2021-11-23 2023-04-26 경북대학교 산학협력단 전이금속 산화물 기반 3차원 구조 뉴로모픽 소자 및 그 제조 방법
US11887661B2 (en) * 2021-12-29 2024-01-30 Micron Technology, Inc. Cross-point pillar architecture for memory arrays

Family Cites Families (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2514582C2 (de) 1975-04-03 1977-05-26 Siemens Ag Schaltung zur erzeugung von leseimpulsen
JP3647736B2 (ja) * 2000-09-29 2005-05-18 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置
US6873538B2 (en) 2001-12-20 2005-03-29 Micron Technology, Inc. Programmable conductor random access memory and a method for writing thereto
US6867996B2 (en) 2002-08-29 2005-03-15 Micron Technology, Inc. Single-polarity programmable resistance-variable memory element
US6856534B2 (en) 2002-09-30 2005-02-15 Texas Instruments Incorporated Ferroelectric memory with wide operating voltage and multi-bit storage per cell
US7606059B2 (en) 2003-03-18 2009-10-20 Kabushiki Kaisha Toshiba Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
US7394680B2 (en) 2003-03-18 2008-07-01 Kabushiki Kaisha Toshiba Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode
JP4377816B2 (ja) 2003-03-18 2009-12-02 株式会社東芝 相変化メモリ装置
US7499315B2 (en) 2003-06-11 2009-03-03 Ovonyx, Inc. Programmable matrix array with chalcogenide material
US7180767B2 (en) 2003-06-18 2007-02-20 Macronix International Co., Ltd. Multi-level memory device and methods for programming and reading the same
US7106625B2 (en) 2004-07-06 2006-09-12 Macronix International Co, Td Charge trapping non-volatile memory with two trapping locations per gate, and method for operating same
CN1770494B (zh) * 2004-09-24 2010-05-05 旺宏电子股份有限公司 硫族化合物储存器
US7324377B2 (en) 2004-10-29 2008-01-29 Macronix International Co., Ltd. Apparatus and method for programming and erasing virtual ground EEPROM without disturbing adjacent cells
US7200045B2 (en) 2004-12-30 2007-04-03 Macronix International Company, Ltd. Method for programming a charge-trapping nonvolatile memory cell by raised-Vs channel initialed secondary electron injection (CHISEL)
US7280390B2 (en) 2005-04-14 2007-10-09 Ovonyx, Inc. Reading phase change memories without triggering reset cell threshold devices
JP5049483B2 (ja) 2005-04-22 2012-10-17 パナソニック株式会社 電気素子，メモリ装置，および半導体集積回路
KR100729357B1 (ko) 2005-08-25 2007-06-15 삼성전자주식회사 읽기 속도를 향상시킬 수 있는 플래시 메모리 장치
US7289359B2 (en) 2005-09-09 2007-10-30 Macronix International Co., Ltd. Systems and methods for using a single reference cell in a dual bit flash memory
US7626859B2 (en) 2006-02-16 2009-12-01 Samsung Electronics Co., Ltd. Phase-change random access memory and programming method
US7414883B2 (en) 2006-04-20 2008-08-19 Intel Corporation Programming a normally single phase chalcogenide material for use as a memory or FPLA
KR101446581B1 (ko) 2006-07-31 2014-10-06 쌘디스크 3디 엘엘씨 멀티-레벨 수동 소자 메모리 셀 어레이를 판독하는 방법과 장치
US7542338B2 (en) 2006-07-31 2009-06-02 Sandisk 3D Llc Method for reading a multi-level passive element memory cell array
US7697316B2 (en) 2006-12-07 2010-04-13 Macronix International Co., Ltd. Multi-level cell resistance random access memory with metal oxides
US7515461B2 (en) 2007-01-05 2009-04-07 Macronix International Co., Ltd. Current compliant sensing architecture for multilevel phase change memory
US7609559B2 (en) 2007-01-12 2009-10-27 Micron Technology, Inc. Word line drivers having a low pass filter circuit in non-volatile memory device
ITRM20070107A1 (it) 2007-02-27 2008-08-28 Micron Technology Inc Sistema di inibizione di autoboost locale con linea di parole schermata
JP5539610B2 (ja) 2007-03-02 2014-07-02 ピーエスフォー ルクスコ エスエイアールエル 相変化メモリのプログラム方法と読み出し方法
US7960224B2 (en) 2007-04-03 2011-06-14 Macronix International Co., Ltd. Operation method for multi-level switching of metal-oxide based RRAM
KR101219774B1 (ko) 2007-07-20 2013-01-18 삼성전자주식회사 전이금속 산화막을 갖는 반도체소자의 제조방법 및 관련된소자
KR20090016199A (ko) 2007-08-10 2009-02-13 주식회사 하이닉스반도체 상 변화 메모리 장치 및 그 동작방법
US8098517B2 (en) 2007-10-31 2012-01-17 Ovonyx, Inc. Method of restoring variable resistance memory device
DE102008003637B4 (de) 2008-01-09 2010-05-12 Qimonda Ag Integrierter Schaltkreis, Verfahren zum Programmieren einer Speicherzellen-Anordnung eines Integrierten Schaltkreises, und Speichermodul
US8077505B2 (en) 2008-05-07 2011-12-13 Macronix International Co., Ltd. Bipolar switching of phase change device
JP5227133B2 (ja) 2008-10-06 2013-07-03 株式会社日立製作所 半導体記憶装置
US8009455B2 (en) 2009-01-20 2011-08-30 Ovonyx, Inc. Programmable resistance memory
KR101519363B1 (ko) 2009-02-16 2015-05-13 삼성전자 주식회사 저항체를 이용한 멀티 레벨 비휘발성 메모리 장치
JP4956598B2 (ja) * 2009-02-27 2012-06-20 シャープ株式会社 不揮発性半導体記憶装置及びその製造方法
US20100226163A1 (en) 2009-03-04 2010-09-09 Savransky Semyon D Method of resistive memory programming and associated devices and materials
JP2010244607A (ja) 2009-04-03 2010-10-28 Elpida Memory Inc 半導体記憶装置
US8829646B2 (en) * 2009-04-27 2014-09-09 Macronix International Co., Ltd. Integrated circuit 3D memory array and manufacturing method
US20100284211A1 (en) 2009-05-05 2010-11-11 Michael Hennessey Multilevel Nonvolatile Memory via Dual Polarity Programming
US8248836B2 (en) 2009-07-13 2012-08-21 Seagate Technology Llc Non-volatile memory cell stack with dual resistive elements
JP5558090B2 (ja) 2009-12-16 2014-07-23 株式会社東芝 抵抗変化型メモリセルアレイ
JP5756760B2 (ja) 2010-01-13 2015-07-29 株式会社日立製作所 磁気メモリ、磁気メモリの製造方法、及び、磁気メモリの駆動方法
KR20110088906A (ko) 2010-01-29 2011-08-04 삼성전자주식회사 가변 저항 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템
WO2011121970A1 (ja) 2010-03-30 2011-10-06 パナソニック株式会社 抵抗変化型不揮発性記憶素子のフォーミング方法及び抵抗変化型不揮発性記憶装置
KR101623546B1 (ko) 2010-05-28 2016-05-23 삼성전자주식회사 3차원 반도체 메모리 장치 및 그 제조 방법
US20110297912A1 (en) 2010-06-08 2011-12-08 George Samachisa Non-Volatile Memory Having 3d Array of Read/Write Elements with Vertical Bit Lines and Laterally Aligned Active Elements and Methods Thereof
TW201212319A (en) 2010-06-18 2012-03-16 Sandisk 3D Llc Composition of memory cell with resistance-switching layers
US8803214B2 (en) 2010-06-28 2014-08-12 Micron Technology, Inc. Three dimensional memory and methods of forming the same
US9227456B2 (en) 2010-12-14 2016-01-05 Sandisk 3D Llc Memories with cylindrical read/write stacks
KR20120073086A (ko) 2010-12-24 2012-07-04 삼성전자주식회사 가변 저항 소자, 상기 가변 저항 소자를 포함하는 반도체 장치 및 상기 반도체 장치의 동작 방법
US8487293B2 (en) 2010-12-30 2013-07-16 Micron Technology, Inc. Bipolar switching memory cell with built-in “on ”state rectifying current-voltage characteristics
JP2012174766A (ja) 2011-02-18 2012-09-10 Toshiba Corp 不揮発性抵抗変化素子
US8891293B2 (en) 2011-06-23 2014-11-18 Macronix International Co., Ltd. High-endurance phase change memory devices and methods for operating the same
US9305644B2 (en) 2011-06-24 2016-04-05 Rambus Inc. Resistance memory cell
US8866121B2 (en) 2011-07-29 2014-10-21 Sandisk 3D Llc Current-limiting layer and a current-reducing layer in a memory device
KR101807247B1 (ko) 2011-09-23 2017-12-11 삼성전자주식회사 3차원 반도체 장치의 제조 방법
US8958233B2 (en) 2011-10-18 2015-02-17 Micron Technology, Inc. Stabilization of resistive memory
JP2013114737A (ja) 2011-11-28 2013-06-10 Internatl Business Mach Corp <Ibm> 相変化メモリ・セルをプログラミングするための方法、コンピュータ・プログラム、および装置、ならびに相変化メモリ・デバイス（相変化メモリ・セルのプログラミング）
JP5915121B2 (ja) 2011-11-30 2016-05-11 凸版印刷株式会社 抵抗変化型不揮発性メモリ
KR20130091146A (ko) * 2012-02-07 2013-08-16 삼성전자주식회사 비휘발성 메모리 셀 및 이를 포함하는 비휘발성 메모리 장치
KR101929530B1 (ko) 2012-02-21 2019-03-15 삼성전자주식회사 가변 저항 메모리 장치 및 그것의 구동 방법
GB2502569A (en) 2012-05-31 2013-12-04 Ibm Programming of gated phase-change memory cells
US9183929B2 (en) 2012-08-29 2015-11-10 Micron Technology, Inc. Systems, methods and devices for programming a multilevel resistive memory cell
US8841649B2 (en) * 2012-08-31 2014-09-23 Micron Technology, Inc. Three dimensional memory array architecture
US8729523B2 (en) 2012-08-31 2014-05-20 Micron Technology, Inc. Three dimensional memory array architecture
JP2014049745A (ja) 2012-08-31 2014-03-17 Toshiba Corp 半導体記憶装置、及びその製造方法
KR101956794B1 (ko) 2012-09-20 2019-03-13 에스케이하이닉스 주식회사 가변 저항 메모리 장치 및 그 제조 방법
US8913422B2 (en) 2012-09-28 2014-12-16 Intel Corporation Decreased switching current in spin-transfer torque memory
US9437266B2 (en) 2012-11-13 2016-09-06 Macronix International Co., Ltd. Unipolar programmable metallization cell
KR102166506B1 (ko) * 2012-12-26 2020-10-15 소니 세미컨덕터 솔루션즈 가부시키가이샤 기억 장치 및 그 제조 방법
US9001554B2 (en) 2013-01-10 2015-04-07 Intermolecular, Inc. Resistive random access memory cell having three or more resistive states
US8964442B2 (en) 2013-01-14 2015-02-24 Macronix International Co., Ltd. Integrated circuit 3D phase change memory array and manufacturing method
US10546998B2 (en) 2013-02-05 2020-01-28 Micron Technology, Inc. Methods of forming memory and methods of forming vertically-stacked structures
US9118007B2 (en) 2013-03-14 2015-08-25 Crossbar, Inc. RRAM with dual mode operation
US9047944B2 (en) 2013-04-24 2015-06-02 Micron Technology, Inc. Resistance variable memory sensing
US9728584B2 (en) 2013-06-11 2017-08-08 Micron Technology, Inc. Three dimensional memory array with select device
US9105468B2 (en) 2013-09-06 2015-08-11 Sandisk 3D Llc Vertical bit line wide band gap TFT decoder
US9312005B2 (en) * 2013-09-10 2016-04-12 Micron Technology, Inc. Accessing memory cells in parallel in a cross-point array
US9019754B1 (en) 2013-12-17 2015-04-28 Micron Technology, Inc. State determination in resistance variable memory
KR102159258B1 (ko) 2014-04-04 2020-09-23 삼성전자 주식회사 메모리 장치 및 상기 메모리 장치의 동작 방법
EP2937888B1 (de) 2014-04-25 2019-02-20 IMS Nanofabrication GmbH Mehrstrahliges werkzeug zum schneiden von mustern
KR101646365B1 (ko) * 2014-10-27 2016-08-08 한양대학교 산학협력단 3차원 크로스바-포인트 수직 다층 구조의 상보적 저항 스위칭 메모리 소자
US9620712B2 (en) * 2014-10-31 2017-04-11 Sandisk Technologies Llc Concave word line and convex interlayer dielectric for protecting a read/write layer
US9990990B2 (en) 2014-11-06 2018-06-05 Micron Technology, Inc. Apparatuses and methods for accessing variable resistance memory device
US20160225459A1 (en) 2015-01-30 2016-08-04 Micron Technology, Inc. Apparatuses operable in multiple power modes and methods of operating the same
US9514815B1 (en) 2015-05-13 2016-12-06 Macronix International Co., Ltd. Verify scheme for ReRAM
US9805794B1 (en) 2015-05-19 2017-10-31 Crossbar, Inc. Enhanced erasing of two-terminal memory
US10134470B2 (en) 2015-11-04 2018-11-20 Micron Technology, Inc. Apparatuses and methods including memory and operation of same
US9978810B2 (en) 2015-11-04 2018-05-22 Micron Technology, Inc. Three-dimensional memory apparatuses and methods of use
US10446226B2 (en) 2016-08-08 2019-10-15 Micron Technology, Inc. Apparatuses including multi-level memory cells and methods of operation of same
US9799381B1 (en) 2016-09-28 2017-10-24 Intel Corporation Double-polarity memory read
US10157670B2 (en) 2016-10-28 2018-12-18 Micron Technology, Inc. Apparatuses including memory cells and methods of operation of same

Also Published As

Publication number Publication date
EP3371837A4 (de) 2019-06-26
US11018190B2 (en) 2021-05-25
US20180138241A1 (en) 2018-05-17
JP6783306B2 (ja) 2020-11-11
TWI677087B (zh) 2019-11-11
KR102106726B1 (ko) 2020-05-06
CN108369989A (zh) 2018-08-03
EP3371837B1 (de) 2024-06-05
US20170125484A1 (en) 2017-05-04
US9978810B2 (en) 2018-05-22
US20180138240A1 (en) 2018-05-17
WO2017078932A1 (en) 2017-05-11
JP2018536989A (ja) 2018-12-13
US20200365659A1 (en) 2020-11-19
EP3371837A1 (de) 2018-09-12
US10629651B2 (en) 2020-04-21
TW201727888A (zh) 2017-08-01
US10734446B2 (en) 2020-08-04
KR20180063357A (ko) 2018-06-11
CN116153370A (zh) 2023-05-23

Similar Documents

Publication Publication Date Title
SG11201803619VA (en) Three-dimensional memory apparatuses and methods of use
IL286316A (en) New micro-dystrophins and related method of use
SG11201803583TA (en) Apparatuses and methods including memory and operation of same
IL250415B (en) Antibodies against pd-l and methods of using them
IL282572B (en) Tetrahydropyranylamino-pyrrolopyrimidinone and methods of using it
HK1253049A1 (zh) 糖基相互作用化合物及其使用方法
PT3548033T (pt) Compostos e respectivos métodos de utilização
IL251988A0 (en) Compounds acting on glycans and methods of using them
EP3268211C0 (de) Vorrichtung und verfahren zur formung dreidimensionaler objekte
SG11201607629UA (en) Memory arrays and methods of forming memory arrays
IL282482A (en) Variants of protoxin-II and methods of use
PL3089971T3 (pl) Związki i sposoby ich zastosowania
IL282508A (en) Variants of protoxin-II and methods of use
HK1250360A1 (zh) 袋和製作袋的方法
SG11201605915WA (en) Furo-3-carboxamide derivatives and methods of use
ZA201606450B (en) Compounds and their methods of use
SG10201609225QA (en) Memory Devices And Methods
GB201403697D0 (en) Compounds and methods of use
SG10201406029SA (en) Adjustable compartments and method of making same
SG10201912615PA (en) Tetrahydropyranyl amino-pyrrolopyrimidinone and methods of use thereof
GB201416797D0 (en) Contianer and method of use thereof