JP2018536989A - 3次元メモリ装置および使用方法 - Google Patents
3次元メモリ装置および使用方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 67
- 239000003989 dielectric material Substances 0.000 claims description 17
- 150000004770 chalcogenides Chemical class 0.000 claims description 8
- 230000004044 response Effects 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 10
- 239000011669 selenium Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000012782 phase change material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
【選択図】図1
Description
Claims (37)
- 電極面と、
前記電極面を通って配置され、かつ、前記電極面に結合されたメモリ材料と、
前記電極面と同一平面に整列した、前記メモリ材料に含まれるメモリセルであって、第1の論理状態を表す第1のしきい電圧および第2の論理状態を表す第2のしきい電圧を示すように構成され、セレクタデバイスおよびメモリ素子の役割を果たすように更に構成されたメモリセルと、
前記メモリセルを通って配置され、かつ、前記メモリセルに結合された導電性ピラーと
を備える装置であって、
前記導電性ピラーおよび前記電極面は、前記メモリセルに電圧を与えて前記メモリセルに論理状態を書き込むように構成される、装置。 - 前記導電性ピラーと前記メモリ材料との間に配置された電極円筒部を更に備える、請求項1に記載の装置。
- 前記メモリ材料および前記導電性ピラーは、同心円柱として形成される、請求項1に記載の装置。
- 前記電極面に平行である第2の電極面を更に含み、前記メモリ材料および前記導電性ピラーは、前記第2の電極面を通って延在し、かつ、前記第2の電極面に結合される、請求項1に記載の装置。
- 前記メモリ材料は、前記第2の電極面と連結された第2のメモリセルを含む、請求項4に記載の装置。
- 前記電極面と前記第2の電極面との間に配置された誘電体材料を更に備える、請求項4に記載の装置。
- 前記電極面を通って配置された複数の導電性ピラーおよび対応するメモリ材料であって、アレイを形成する複数の導電性ピラーおよび対応するメモリ材料を更に含む、請求項1に記載の装置。
- 前記電極面は第1のメモリアクセス線に接続され、前記導電性ピラーは第2のメモリアクセス線に接続される、請求項1に記載の装置。
- 前記導電性ピラーおよび前記電極面は、前記メモリセルに第2の電圧を与えて前記第1の論理状態および前記第2の論理状態を読み出すように、更に構成される、請求項1に記載の装置。
- セレクタデバイスおよびメモリ素子の役割を果たすように構成されたリング形状のメモリセル、導電性ピラー、及び前記リング形状のメモリセルと前記導電性ピラーとの間に配置された電極材料を含むメモリ柱状部と、
複数の電極面と複数の誘電体材料が互い違いになった積層であって、前記リング形状のメモリセルは前記複数の電極面のうちの1つの電極面に整列する、複数の電極面と複数の誘電体材料が互い違いになった積層と、
前記積層を貫通する開口部であって、前記メモリ柱状部が配置された開口部と
を備える装置。 - 前記リング形状のメモリセルは、前記メモリ柱状部の長さにわたって延在するメモリ材料に含まれる、請求項10に記載の装置。
- 前記複数の電極面は複数の薄膜を含む、請求項10に記載の装置。
- 前記複数の誘電体材料は酸化物を含む、請求項10に記載の装置。
- 前記メモリ材料はカルコゲニドを含む、請求項11に記載の装置。
- 前記電極材料はバリア材を含む、請求項10に記載の装置。
- 電極面と、
2次元アレイとして前記電極面に整列した複数のリング形状のメモリセルであって、セレクタデバイスおよびメモリ素子の役割を果たすように構成された複数のリング形状のメモリセルと
を備える装置。 - 前記複数のリング形状のメモリセルの中に、複数の導電性ピラーを更に備える、請求項16に記載の装置。
- 前記複数のリング形状のメモリセルの中に、複数のリング形状の電極円筒部を更に備える、請求項16に記載の装置。
- 第2の電極面と、
前記第2の電極面に整列した第2の複数のリング形状のメモリセルと
を更に備える、請求項16に記載の装置。 - 前記第2の複数のリング形状のメモリセルは、前記複数のリング形状のメモリセルと垂直方向に整列する、請求項19に記載の装置。
- 前記複数のメモリセルは、第1の極性を有する電圧でのプログラミングに応じて、第1の論理状態を表す第1のしきい電圧を示すように、第2の極性を有する電圧でのプログラミングに応じて、第2の論理状態を表す第2のしきい電圧を示すように構成される、請求項16に記載の装置。
- 電極面と、
前記電極面を通って配置された導電性ピラーのアレイと、
前記導電性ピラーのアレイに含まれる前記導電性ピラーの周りに同心環として形成されたメモリセルのアレイであって、前記電極面と同一平面に整列し、セレクタデバイスおよびメモリ素子の役割を果たすように構成されたメモリセルのアレイと
を備える装置。 - 前記メモリセルのアレイに含まれる前記メモリセルは、閾値切り替えタイプの2端子デバイスの役割を果たすように構成される、請求項22に記載の装置。
- 前記電極面、前記導電性ピラーのアレイ、及び前記メモリセルのアレイは、3次元メモリアレイに含まれる、請求項22に記載の装置。
- 前記メモリセルのアレイに含まれる前記メモリセルはカルコゲニドを含む、請求項22に記載の装置。
- 前記メモリセルのアレイに含まれる前記メモリセルの厚さは前記電極面の厚さと同じである、請求項22に記載の装置。
- 導電性ピラーのアレイのうちの1つの導電性ピラーに対応する第1のアドレスを受信することと、
電極面の積層のうちの1つの電極面に対応する第2のアドレスを受信することと、
前記導電性ピラーを第1の電圧につなぐことと、
前記電極面を第2の電圧につなぐことと、
前記導電性ピラーと前記電極面との間に結合されたメモリセルであって、セレクタデバイスおよびメモリ素子の役割を果たすように構成されたメモリセルを、前記第1の電圧と前記第2の電圧との差でバイアスすることと
を含む方法。 - 前記第1のアドレスに対応していない、前記導電性ピラーのアレイに含まれる導電性ピラーを、共通電圧につなぐことと、
前記第2のアドレスに対応していない、前記電極面の積層に含まれる電極面を、前記共通電圧につなぐことと、
を更に含む、請求項27に記載の方法。 - 前記第1の電圧は前記第2の電圧よりも大きく、かつ、前記バイアスすることに応じて第1の論理状態が前記メモリセルに書き込まれる、または、前記第1の電圧は前記第2の電圧よりも小さく、かつ、前記バイアスすることに応じて第2の論理状態が前記メモリセルに書き込まれる、請求項27に記載の方法。
- 前記第1の論理状態は前記メモリセルの第1のしきい電圧に対応し、前記第2の論理状態は前記メモリセルの第2のしきい電圧に対応する、請求項29に記載の方法。
- 前記導電性ピラーを第3の電圧につなぐことと、
前記電極面を第4の電圧につなぐことと、
前記導電性ピラーと前記電極面との間に結合された前記メモリセルを、前記第3の電圧と前記第4の電圧との差でバイアスすることであって、前記第3の電圧は前記第4の電圧よりも大きい、前記メモリセルをバイアスすることと、
前記バイアスすることに応じて、前記メモリセルの論理状態を決定することと
を含む、請求項30に記載の方法。 - 前記第1のアドレスはロウアドレスデコーダおよびカラムアドレスデコーダで受信され、前記第2のアドレスは電極面アドレスデコーダで受信される、請求項27に記載の方法。
- 複数の電極面と複数の誘電体層が互い違いになった積層を形成することと、
前記積層に開口部を形成することと、
前記開口部の中にメモリ材料のコンフォーマル層を形成することと、
導電性ピラーで前記開口部の前記コンフォーマル層の上を一杯にして塞ぐことと
を含む方法。 - 前記導電性ピラーで前記開口部を一杯にして塞ぐ前に、前記メモリ材料の上にバリア材のコンフォーマル層を形成することを更に含む、請求項33に記載の方法。
- 前記開口部を形成することは、マスクを適用すること、及び前記積層中に前記開口部をエッチングすることを含む、請求項33に記載の方法。
- 前記電極面を第1の複数の対応するメモリアクセス線に接続することと、
前記導電性ピラーを第2のメモリアクセス線に接続することと
を更に含む、請求項33に記載の方法。 - 前記開口部に前記メモリ材料のコンフォーマル層を形成することは、前記電極面をくぼませること、及び前記電極面に形成したくぼみにメモリ材料を選択的に形成することを含む、請求項33に記載の方法。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020532121A (ja) * | 2017-08-25 | 2020-11-05 | マイクロン テクノロジー,インク. | 誘電バリアを有する自己選択型メモリ・セル |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9978810B2 (en) | 2015-11-04 | 2018-05-22 | Micron Technology, Inc. | Three-dimensional memory apparatuses and methods of use |
US10134470B2 (en) | 2015-11-04 | 2018-11-20 | Micron Technology, Inc. | Apparatuses and methods including memory and operation of same |
US10446226B2 (en) | 2016-08-08 | 2019-10-15 | Micron Technology, Inc. | Apparatuses including multi-level memory cells and methods of operation of same |
US10157670B2 (en) | 2016-10-28 | 2018-12-18 | Micron Technology, Inc. | Apparatuses including memory cells and methods of operation of same |
US10559752B2 (en) * | 2016-12-05 | 2020-02-11 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
US10096655B1 (en) | 2017-04-07 | 2018-10-09 | Micron Technology, Inc. | Three dimensional memory array |
US10263039B2 (en) | 2017-06-26 | 2019-04-16 | Micron Technology, Inc. | Memory cells having resistors and formation of the same |
US10461125B2 (en) | 2017-08-29 | 2019-10-29 | Micron Technology, Inc. | Three dimensional memory arrays |
US10573362B2 (en) | 2017-08-29 | 2020-02-25 | Micron Technology, Inc. | Decode circuitry coupled to a memory array |
US10490602B2 (en) | 2017-09-21 | 2019-11-26 | Micron Technology, Inc. | Three dimensional memory arrays |
US10686129B2 (en) | 2017-11-29 | 2020-06-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Resistive random access memory device |
US10797107B2 (en) * | 2018-02-27 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor memory device including phase change material layers and method for manufacturing thereof |
US10593399B2 (en) | 2018-03-19 | 2020-03-17 | Micron Technology, Inc. | Self-selecting memory array with horizontal bit lines |
US10803939B2 (en) * | 2018-08-22 | 2020-10-13 | Micron Technology, Inc. | Techniques for programming a memory cell |
JP2020047339A (ja) * | 2018-09-18 | 2020-03-26 | キオクシア株式会社 | メモリシステム |
US11631717B2 (en) * | 2018-09-28 | 2023-04-18 | Intel Corporation | 3D memory array with memory cells having a 3D selector and a storage component |
US10593730B1 (en) | 2018-10-10 | 2020-03-17 | Micron Technology, Inc. | Three-dimensional memory array |
US11444243B2 (en) | 2019-10-28 | 2022-09-13 | Micron Technology, Inc. | Electronic devices comprising metal oxide materials and related methods and systems |
WO2021111158A1 (en) * | 2019-12-03 | 2021-06-10 | Micron Technology, Inc. | Methods and systems for accessing memory cells |
TWI760924B (zh) | 2019-12-03 | 2022-04-11 | 美商美光科技公司 | 用於存取記憶體單元之方法及系統 |
KR102254032B1 (ko) * | 2019-12-26 | 2021-05-20 | 한양대학교 산학협력단 | 정공 주입 소거 방식을 지원하는 3차원 플래시 메모리 및 그 제조 방법 |
US11538862B2 (en) * | 2020-06-18 | 2022-12-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three-dimensional memory device and manufacturing method thereof |
KR20220014144A (ko) * | 2020-07-28 | 2022-02-04 | 삼성전자주식회사 | 저항성 메모리 소자 |
WO2022101655A1 (en) * | 2020-11-11 | 2022-05-19 | Micron Technology, Inc. | Method and system for accessing memory cells |
US11342382B1 (en) * | 2020-12-11 | 2022-05-24 | Micron Technology, Inc. | Capacitive pillar architecture for a memory array |
KR102526214B1 (ko) * | 2021-11-23 | 2023-04-26 | 경북대학교 산학협력단 | 전이금속 산화물 기반 3차원 구조 뉴로모픽 소자 및 그 제조 방법 |
US11887661B2 (en) * | 2021-12-29 | 2024-01-30 | Micron Technology, Inc. | Cross-point pillar architecture for memory arrays |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010287872A (ja) * | 2009-02-27 | 2010-12-24 | Sharp Corp | 不揮発性半導体記憶装置及びその製造方法 |
WO2014103577A1 (ja) * | 2012-12-26 | 2014-07-03 | ソニー株式会社 | 記憶装置およびその製造方法 |
US20150044849A1 (en) * | 2012-08-31 | 2015-02-12 | Micron Technology, Inc. | Three dimensional memory array architecture |
US20150074326A1 (en) * | 2013-09-10 | 2015-03-12 | Micron Technology, Inc. | Accessing memory cells in parallel in a cross-point array |
Family Cites Families (90)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2514582C2 (de) | 1975-04-03 | 1977-05-26 | Siemens Ag | Schaltung zur erzeugung von leseimpulsen |
JP3647736B2 (ja) * | 2000-09-29 | 2005-05-18 | 株式会社東芝 | 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置 |
US6873538B2 (en) | 2001-12-20 | 2005-03-29 | Micron Technology, Inc. | Programmable conductor random access memory and a method for writing thereto |
US6867996B2 (en) | 2002-08-29 | 2005-03-15 | Micron Technology, Inc. | Single-polarity programmable resistance-variable memory element |
US6856534B2 (en) | 2002-09-30 | 2005-02-15 | Texas Instruments Incorporated | Ferroelectric memory with wide operating voltage and multi-bit storage per cell |
EP1609154B1 (en) | 2003-03-18 | 2013-12-25 | Kabushiki Kaisha Toshiba | Phase change memory device |
US7394680B2 (en) | 2003-03-18 | 2008-07-01 | Kabushiki Kaisha Toshiba | Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode |
US7606059B2 (en) | 2003-03-18 | 2009-10-20 | Kabushiki Kaisha Toshiba | Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array |
US7499315B2 (en) | 2003-06-11 | 2009-03-03 | Ovonyx, Inc. | Programmable matrix array with chalcogenide material |
US7180767B2 (en) | 2003-06-18 | 2007-02-20 | Macronix International Co., Ltd. | Multi-level memory device and methods for programming and reading the same |
US7106625B2 (en) | 2004-07-06 | 2006-09-12 | Macronix International Co, Td | Charge trapping non-volatile memory with two trapping locations per gate, and method for operating same |
TWI313863B (en) * | 2004-09-24 | 2009-08-21 | Macronix Int Co Ltd | Chalcogenide memory and operating method thereof |
US7324377B2 (en) | 2004-10-29 | 2008-01-29 | Macronix International Co., Ltd. | Apparatus and method for programming and erasing virtual ground EEPROM without disturbing adjacent cells |
US7200045B2 (en) | 2004-12-30 | 2007-04-03 | Macronix International Company, Ltd. | Method for programming a charge-trapping nonvolatile memory cell by raised-Vs channel initialed secondary electron injection (CHISEL) |
US7280390B2 (en) | 2005-04-14 | 2007-10-09 | Ovonyx, Inc. | Reading phase change memories without triggering reset cell threshold devices |
JP5049483B2 (ja) | 2005-04-22 | 2012-10-17 | パナソニック株式会社 | 電気素子,メモリ装置,および半導体集積回路 |
KR100729357B1 (ko) | 2005-08-25 | 2007-06-15 | 삼성전자주식회사 | 읽기 속도를 향상시킬 수 있는 플래시 메모리 장치 |
US7289359B2 (en) | 2005-09-09 | 2007-10-30 | Macronix International Co., Ltd. | Systems and methods for using a single reference cell in a dual bit flash memory |
US7626859B2 (en) | 2006-02-16 | 2009-12-01 | Samsung Electronics Co., Ltd. | Phase-change random access memory and programming method |
US7414883B2 (en) | 2006-04-20 | 2008-08-19 | Intel Corporation | Programming a normally single phase chalcogenide material for use as a memory or FPLA |
WO2008016946A2 (en) | 2006-07-31 | 2008-02-07 | Sandisk 3D Llc | Method and apparatus for reading a multi-level passive element memory cell array |
US7542338B2 (en) | 2006-07-31 | 2009-06-02 | Sandisk 3D Llc | Method for reading a multi-level passive element memory cell array |
US7697316B2 (en) | 2006-12-07 | 2010-04-13 | Macronix International Co., Ltd. | Multi-level cell resistance random access memory with metal oxides |
US7515461B2 (en) | 2007-01-05 | 2009-04-07 | Macronix International Co., Ltd. | Current compliant sensing architecture for multilevel phase change memory |
US7609559B2 (en) | 2007-01-12 | 2009-10-27 | Micron Technology, Inc. | Word line drivers having a low pass filter circuit in non-volatile memory device |
ITRM20070107A1 (it) | 2007-02-27 | 2008-08-28 | Micron Technology Inc | Sistema di inibizione di autoboost locale con linea di parole schermata |
JP5539610B2 (ja) | 2007-03-02 | 2014-07-02 | ピーエスフォー ルクスコ エスエイアールエル | 相変化メモリのプログラム方法と読み出し方法 |
US7960224B2 (en) | 2007-04-03 | 2011-06-14 | Macronix International Co., Ltd. | Operation method for multi-level switching of metal-oxide based RRAM |
KR101219774B1 (ko) | 2007-07-20 | 2013-01-18 | 삼성전자주식회사 | 전이금속 산화막을 갖는 반도체소자의 제조방법 및 관련된소자 |
KR20090016199A (ko) | 2007-08-10 | 2009-02-13 | 주식회사 하이닉스반도체 | 상 변화 메모리 장치 및 그 동작방법 |
US8098517B2 (en) | 2007-10-31 | 2012-01-17 | Ovonyx, Inc. | Method of restoring variable resistance memory device |
DE102008003637B4 (de) | 2008-01-09 | 2010-05-12 | Qimonda Ag | Integrierter Schaltkreis, Verfahren zum Programmieren einer Speicherzellen-Anordnung eines Integrierten Schaltkreises, und Speichermodul |
US8077505B2 (en) | 2008-05-07 | 2011-12-13 | Macronix International Co., Ltd. | Bipolar switching of phase change device |
JP5227133B2 (ja) | 2008-10-06 | 2013-07-03 | 株式会社日立製作所 | 半導体記憶装置 |
US8009455B2 (en) | 2009-01-20 | 2011-08-30 | Ovonyx, Inc. | Programmable resistance memory |
KR101519363B1 (ko) | 2009-02-16 | 2015-05-13 | 삼성전자 주식회사 | 저항체를 이용한 멀티 레벨 비휘발성 메모리 장치 |
US20100226163A1 (en) | 2009-03-04 | 2010-09-09 | Savransky Semyon D | Method of resistive memory programming and associated devices and materials |
JP2010244607A (ja) | 2009-04-03 | 2010-10-28 | Elpida Memory Inc | 半導体記憶装置 |
US8829646B2 (en) * | 2009-04-27 | 2014-09-09 | Macronix International Co., Ltd. | Integrated circuit 3D memory array and manufacturing method |
US20100284211A1 (en) | 2009-05-05 | 2010-11-11 | Michael Hennessey | Multilevel Nonvolatile Memory via Dual Polarity Programming |
US8248836B2 (en) | 2009-07-13 | 2012-08-21 | Seagate Technology Llc | Non-volatile memory cell stack with dual resistive elements |
JP5558090B2 (ja) | 2009-12-16 | 2014-07-23 | 株式会社東芝 | 抵抗変化型メモリセルアレイ |
WO2011087038A1 (ja) | 2010-01-13 | 2011-07-21 | 株式会社日立製作所 | 磁気メモリ、磁気メモリの製造方法、及び、磁気メモリの駆動方法 |
KR20110088906A (ko) | 2010-01-29 | 2011-08-04 | 삼성전자주식회사 | 가변 저항 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
US8848421B2 (en) | 2010-03-30 | 2014-09-30 | Panasonic Corporation | Forming method of performing forming on variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device |
KR101623546B1 (ko) | 2010-05-28 | 2016-05-23 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 및 그 제조 방법 |
US8547720B2 (en) | 2010-06-08 | 2013-10-01 | Sandisk 3D Llc | Non-volatile memory having 3D array of read/write elements with efficient decoding of vertical bit lines and word lines |
TW201212319A (en) | 2010-06-18 | 2012-03-16 | Sandisk 3D Llc | Composition of memory cell with resistance-switching layers |
US8803214B2 (en) | 2010-06-28 | 2014-08-12 | Micron Technology, Inc. | Three dimensional memory and methods of forming the same |
US9227456B2 (en) | 2010-12-14 | 2016-01-05 | Sandisk 3D Llc | Memories with cylindrical read/write stacks |
KR20120073086A (ko) | 2010-12-24 | 2012-07-04 | 삼성전자주식회사 | 가변 저항 소자, 상기 가변 저항 소자를 포함하는 반도체 장치 및 상기 반도체 장치의 동작 방법 |
US8487293B2 (en) | 2010-12-30 | 2013-07-16 | Micron Technology, Inc. | Bipolar switching memory cell with built-in “on ”state rectifying current-voltage characteristics |
JP2012174766A (ja) | 2011-02-18 | 2012-09-10 | Toshiba Corp | 不揮発性抵抗変化素子 |
US8891293B2 (en) | 2011-06-23 | 2014-11-18 | Macronix International Co., Ltd. | High-endurance phase change memory devices and methods for operating the same |
US9305644B2 (en) | 2011-06-24 | 2016-04-05 | Rambus Inc. | Resistance memory cell |
US8866121B2 (en) | 2011-07-29 | 2014-10-21 | Sandisk 3D Llc | Current-limiting layer and a current-reducing layer in a memory device |
KR101807247B1 (ko) | 2011-09-23 | 2017-12-11 | 삼성전자주식회사 | 3차원 반도체 장치의 제조 방법 |
US8958233B2 (en) | 2011-10-18 | 2015-02-17 | Micron Technology, Inc. | Stabilization of resistive memory |
JP2013114737A (ja) | 2011-11-28 | 2013-06-10 | Internatl Business Mach Corp <Ibm> | 相変化メモリ・セルをプログラミングするための方法、コンピュータ・プログラム、および装置、ならびに相変化メモリ・デバイス(相変化メモリ・セルのプログラミング) |
JP5915121B2 (ja) | 2011-11-30 | 2016-05-11 | 凸版印刷株式会社 | 抵抗変化型不揮発性メモリ |
KR20130091146A (ko) * | 2012-02-07 | 2013-08-16 | 삼성전자주식회사 | 비휘발성 메모리 셀 및 이를 포함하는 비휘발성 메모리 장치 |
KR101929530B1 (ko) | 2012-02-21 | 2019-03-15 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그것의 구동 방법 |
GB2502569A (en) | 2012-05-31 | 2013-12-04 | Ibm | Programming of gated phase-change memory cells |
US9183929B2 (en) | 2012-08-29 | 2015-11-10 | Micron Technology, Inc. | Systems, methods and devices for programming a multilevel resistive memory cell |
US8729523B2 (en) | 2012-08-31 | 2014-05-20 | Micron Technology, Inc. | Three dimensional memory array architecture |
JP2014049745A (ja) | 2012-08-31 | 2014-03-17 | Toshiba Corp | 半導体記憶装置、及びその製造方法 |
KR101956794B1 (ko) | 2012-09-20 | 2019-03-13 | 에스케이하이닉스 주식회사 | 가변 저항 메모리 장치 및 그 제조 방법 |
US8913422B2 (en) | 2012-09-28 | 2014-12-16 | Intel Corporation | Decreased switching current in spin-transfer torque memory |
US9437266B2 (en) | 2012-11-13 | 2016-09-06 | Macronix International Co., Ltd. | Unipolar programmable metallization cell |
US9001554B2 (en) | 2013-01-10 | 2015-04-07 | Intermolecular, Inc. | Resistive random access memory cell having three or more resistive states |
US8964442B2 (en) * | 2013-01-14 | 2015-02-24 | Macronix International Co., Ltd. | Integrated circuit 3D phase change memory array and manufacturing method |
US10546998B2 (en) | 2013-02-05 | 2020-01-28 | Micron Technology, Inc. | Methods of forming memory and methods of forming vertically-stacked structures |
US9118007B2 (en) | 2013-03-14 | 2015-08-25 | Crossbar, Inc. | RRAM with dual mode operation |
US9047944B2 (en) | 2013-04-24 | 2015-06-02 | Micron Technology, Inc. | Resistance variable memory sensing |
US9728584B2 (en) | 2013-06-11 | 2017-08-08 | Micron Technology, Inc. | Three dimensional memory array with select device |
US9105468B2 (en) | 2013-09-06 | 2015-08-11 | Sandisk 3D Llc | Vertical bit line wide band gap TFT decoder |
US9019754B1 (en) | 2013-12-17 | 2015-04-28 | Micron Technology, Inc. | State determination in resistance variable memory |
KR102159258B1 (ko) | 2014-04-04 | 2020-09-23 | 삼성전자 주식회사 | 메모리 장치 및 상기 메모리 장치의 동작 방법 |
EP2937888B1 (en) | 2014-04-25 | 2019-02-20 | IMS Nanofabrication GmbH | Multi-beam tool for cutting patterns |
KR101646365B1 (ko) * | 2014-10-27 | 2016-08-08 | 한양대학교 산학협력단 | 3차원 크로스바-포인트 수직 다층 구조의 상보적 저항 스위칭 메모리 소자 |
US9620712B2 (en) * | 2014-10-31 | 2017-04-11 | Sandisk Technologies Llc | Concave word line and convex interlayer dielectric for protecting a read/write layer |
US9990990B2 (en) | 2014-11-06 | 2018-06-05 | Micron Technology, Inc. | Apparatuses and methods for accessing variable resistance memory device |
US20160225459A1 (en) | 2015-01-30 | 2016-08-04 | Micron Technology, Inc. | Apparatuses operable in multiple power modes and methods of operating the same |
US9514815B1 (en) | 2015-05-13 | 2016-12-06 | Macronix International Co., Ltd. | Verify scheme for ReRAM |
US9805794B1 (en) | 2015-05-19 | 2017-10-31 | Crossbar, Inc. | Enhanced erasing of two-terminal memory |
US9978810B2 (en) | 2015-11-04 | 2018-05-22 | Micron Technology, Inc. | Three-dimensional memory apparatuses and methods of use |
US10134470B2 (en) | 2015-11-04 | 2018-11-20 | Micron Technology, Inc. | Apparatuses and methods including memory and operation of same |
US10446226B2 (en) | 2016-08-08 | 2019-10-15 | Micron Technology, Inc. | Apparatuses including multi-level memory cells and methods of operation of same |
US9799381B1 (en) | 2016-09-28 | 2017-10-24 | Intel Corporation | Double-polarity memory read |
US10157670B2 (en) | 2016-10-28 | 2018-12-18 | Micron Technology, Inc. | Apparatuses including memory cells and methods of operation of same |
-
2015
- 2015-11-04 US US14/932,707 patent/US9978810B2/en active Active
-
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010287872A (ja) * | 2009-02-27 | 2010-12-24 | Sharp Corp | 不揮発性半導体記憶装置及びその製造方法 |
US20150044849A1 (en) * | 2012-08-31 | 2015-02-12 | Micron Technology, Inc. | Three dimensional memory array architecture |
WO2014103577A1 (ja) * | 2012-12-26 | 2014-07-03 | ソニー株式会社 | 記憶装置およびその製造方法 |
US20150074326A1 (en) * | 2013-09-10 | 2015-03-12 | Micron Technology, Inc. | Accessing memory cells in parallel in a cross-point array |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020532121A (ja) * | 2017-08-25 | 2020-11-05 | マイクロン テクノロジー,インク. | 誘電バリアを有する自己選択型メモリ・セル |
JP7116156B2 (ja) | 2017-08-25 | 2022-08-09 | マイクロン テクノロジー,インク. | 誘電バリアを有する自己選択型メモリ・セル |
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KR20180063357A (ko) | 2018-06-11 |
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US10629651B2 (en) | 2020-04-21 |
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