SG11201708416PA - Silicon epitaxial wafer and method of producing same - Google Patents
Silicon epitaxial wafer and method of producing sameInfo
- Publication number
- SG11201708416PA SG11201708416PA SG11201708416PA SG11201708416PA SG11201708416PA SG 11201708416P A SG11201708416P A SG 11201708416PA SG 11201708416P A SG11201708416P A SG 11201708416PA SG 11201708416P A SG11201708416P A SG 11201708416PA SG 11201708416P A SG11201708416P A SG 11201708416PA
- Authority
- SG
- Singapore
- Prior art keywords
- epitaxial wafer
- silicon epitaxial
- producing same
- silicon
- producing
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/02—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing
- B28D1/08—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by sawing with saw-blades of endless cutter-type, e.g. chain saws, i.e. saw chains, strap saws
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Thermal Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mining & Mineral Resources (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015095604A JP6447351B2 (ja) | 2015-05-08 | 2015-05-08 | シリコンエピタキシャルウェーハの製造方法およびシリコンエピタキシャルウェーハ |
PCT/JP2016/062662 WO2016181787A1 (ja) | 2015-05-08 | 2016-04-21 | シリコンエピタキシャルウェーハ、その製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201708416PA true SG11201708416PA (en) | 2017-11-29 |
Family
ID=57248936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201708416PA SG11201708416PA (en) | 2015-05-08 | 2016-04-21 | Silicon epitaxial wafer and method of producing same |
Country Status (8)
Country | Link |
---|---|
US (1) | US10211066B2 (ja) |
JP (1) | JP6447351B2 (ja) |
KR (1) | KR101847481B1 (ja) |
CN (1) | CN107532325B (ja) |
DE (1) | DE112016002091B4 (ja) |
SG (1) | SG11201708416PA (ja) |
TW (1) | TWI606155B (ja) |
WO (1) | WO2016181787A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6711320B2 (ja) * | 2017-06-26 | 2020-06-17 | 株式会社Sumco | シリコンウェーハ |
JP7006517B2 (ja) * | 2018-06-12 | 2022-01-24 | 信越半導体株式会社 | シリコン単結晶基板中の欠陥密度の制御方法 |
CN109537045B (zh) * | 2018-12-29 | 2024-05-10 | 徐州晶睿半导体装备科技有限公司 | 用于硅晶锭生长的换热器、硅晶锭的生长炉和制备硅晶锭的方法 |
JP7251517B2 (ja) * | 2020-05-14 | 2023-04-04 | 信越半導体株式会社 | エピタキシャル成長前処理条件の評価方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW589415B (en) | 1998-03-09 | 2004-06-01 | Shinetsu Handotai Kk | Method for producing silicon single crystal wafer and silicon single crystal wafer |
JP3626364B2 (ja) | 1998-05-22 | 2005-03-09 | 信越半導体株式会社 | エピタキシャルシリコン単結晶ウエーハの製造方法及びエピタキシャルシリコン単結晶ウエーハ |
EP0959154B1 (en) | 1998-05-22 | 2010-04-21 | Shin-Etsu Handotai Co., Ltd | A method for producing an epitaxial silicon single crystal wafer and the epitaxial single crystal wafer |
KR100588098B1 (ko) * | 1998-08-31 | 2006-06-09 | 신에쯔 한도타이 가부시키가이샤 | 실리콘 단결정 웨이퍼, 에피택셜 실리콘 웨이퍼와 그제조방법 |
KR100788988B1 (ko) | 1999-10-15 | 2007-12-28 | 신에쯔 한도타이 가부시키가이샤 | 에피텍셜 웨이퍼용 실리콘 단결정 웨이퍼, 에피텍셜웨이퍼 및 이들의 제조방법 그리고 평가방법 |
US6444027B1 (en) * | 2000-05-08 | 2002-09-03 | Memc Electronic Materials, Inc. | Modified susceptor for use in chemical vapor deposition process |
JP4296740B2 (ja) * | 2000-05-17 | 2009-07-15 | 信越半導体株式会社 | シリコン単結晶ウエーハの製造方法およびシリコン単結晶ウエーハならびにエピタキシャルウエーハ |
US6835245B2 (en) | 2000-06-22 | 2004-12-28 | Sumitomo Mitsubishi Silicon Corporation | Method of manufacturing epitaxial wafer and method of producing single crystal as material therefor |
JP4102988B2 (ja) | 2000-06-26 | 2008-06-18 | 信越半導体株式会社 | シリコンウエーハおよびエピタキシャルウエーハの製造方法ならびにエピタキシャルウエーハ |
KR100917087B1 (ko) * | 2000-09-19 | 2009-09-15 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 산화 유발 적층 흠이 거의 없는 질소 도핑 실리콘 |
US6709957B2 (en) | 2001-06-19 | 2004-03-23 | Sumitomo Mitsubishi Silicon Corporation | Method of producing epitaxial wafers |
JP4670224B2 (ja) | 2003-04-01 | 2011-04-13 | 株式会社Sumco | シリコンウェーハの製造方法 |
KR100573473B1 (ko) * | 2004-05-10 | 2006-04-24 | 주식회사 실트론 | 실리콘 웨이퍼 및 그 제조방법 |
JP2006073580A (ja) | 2004-08-31 | 2006-03-16 | Sumco Corp | シリコンエピタキシャルウェーハ及びその製造方法 |
US7902042B2 (en) * | 2004-09-13 | 2011-03-08 | Shin-Etsu Handotai Co., Ltd. | Method of manufacturing SOI wafer and thus-manufactured SOI wafer |
JP4983161B2 (ja) * | 2005-10-24 | 2012-07-25 | 株式会社Sumco | シリコン半導体基板およびその製造方法 |
JP4805681B2 (ja) | 2006-01-12 | 2011-11-02 | ジルトロニック アクチエンゲゼルシャフト | エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法 |
JP4853237B2 (ja) | 2006-11-06 | 2012-01-11 | 株式会社Sumco | エピタキシャルウェーハの製造方法 |
EP2722423B1 (en) | 2009-03-25 | 2017-01-11 | Sumco Corporation | Method of manufacturing a silicon wafer |
JP5550180B2 (ja) * | 2010-06-30 | 2014-07-16 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハ及びその製造方法 |
JP5944643B2 (ja) * | 2011-09-28 | 2016-07-05 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
JP2013163598A (ja) * | 2012-01-10 | 2013-08-22 | Globalwafers Japan Co Ltd | シリコンウェーハの製造方法 |
JP2012134517A (ja) * | 2012-02-08 | 2012-07-12 | Sumco Corp | Igbt用のシリコンウェーハ及びその製造方法 |
JP2013206981A (ja) * | 2012-03-27 | 2013-10-07 | Globalwafers Japan Co Ltd | シリコンウェーハ |
JP6260100B2 (ja) * | 2013-04-03 | 2018-01-17 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
JP2015095604A (ja) | 2013-11-13 | 2015-05-18 | キヤノン株式会社 | 半導体装置の製造方法および半導体基板のエッチング装置 |
JP6115651B2 (ja) * | 2014-01-14 | 2017-04-19 | 株式会社Sumco | シリコンウェーハの製造方法 |
JP6100226B2 (ja) * | 2014-11-26 | 2017-03-22 | 信越半導体株式会社 | シリコン単結晶ウェーハの熱処理方法 |
-
2015
- 2015-05-08 JP JP2015095604A patent/JP6447351B2/ja active Active
-
2016
- 2016-04-21 CN CN201680025582.6A patent/CN107532325B/zh active Active
- 2016-04-21 DE DE112016002091.0T patent/DE112016002091B4/de active Active
- 2016-04-21 SG SG11201708416PA patent/SG11201708416PA/en unknown
- 2016-04-21 KR KR1020177031302A patent/KR101847481B1/ko active IP Right Grant
- 2016-04-21 US US15/564,952 patent/US10211066B2/en active Active
- 2016-04-21 WO PCT/JP2016/062662 patent/WO2016181787A1/ja active Application Filing
- 2016-04-29 TW TW105113404A patent/TWI606155B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR20170126004A (ko) | 2017-11-15 |
KR101847481B1 (ko) | 2018-04-10 |
DE112016002091B4 (de) | 2021-08-26 |
JP2016210649A (ja) | 2016-12-15 |
WO2016181787A1 (ja) | 2016-11-17 |
TW201708630A (zh) | 2017-03-01 |
JP6447351B2 (ja) | 2019-01-09 |
DE112016002091T5 (de) | 2018-03-01 |
US20180108538A1 (en) | 2018-04-19 |
TWI606155B (zh) | 2017-11-21 |
CN107532325A (zh) | 2018-01-02 |
CN107532325B (zh) | 2019-01-11 |
US10211066B2 (en) | 2019-02-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG10201610962SA (en) | SiC WAFER PRODUCING METHOD | |
SG10201707176SA (en) | SiC WAFER PRODUCING METHOD | |
SG10201706480TA (en) | METHOD OF PRODUCING SiC WAFER | |
SG10201605089XA (en) | POLYCRYSTALLINE SiC WAFER PRODUCING METHOD | |
SG10201602619YA (en) | Method of dividing wafer | |
TWI563547B (en) | Method of forming semiconductor structure | |
EP3352200A4 (en) | SiC EPITAXIAL WAFER, SiC EPITAXIAL WAFER PRODUCTION DEVICE, SiC EPITAXIAL WATER PRODUCTION METHOD, AND SEMICONDUCTOR DEVICE | |
HK1208957A1 (en) | Manufacturing method of semiconductor device and semiconductor device | |
TWI560817B (en) | Semiconductor device having recessed edges and method of manufacture | |
EP3123521A4 (en) | Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions | |
SG10201605337UA (en) | Manufacturing method of semiconductor device | |
HK1245999A1 (zh) | 半導體器件及半導體器件的製造方法 | |
EP3026147A4 (en) | SILICON CARBIDE MONOCRYSTAL WAFER AND PROCESS FOR PRODUCING MONOCRYSTAL SILICON CARBIDE INGOT | |
SG11201700608XA (en) | Final polishing method of silicon wafer and silicon wafer | |
GB2551732B (en) | Method of processing wafer | |
HK1216358A1 (zh) | 半導體裝置以及半導體裝置的製造方法 | |
SG11201507962XA (en) | Method for polishing silicon wafer and method for producing epitaxial wafer | |
SG10201602315RA (en) | Method of dividing wafer | |
SG11201803021YA (en) | Monocrystalline semiconductor wafer and method for producing a semiconductor wafer | |
SG11201506429SA (en) | Epitaxial silicon wafer and method for manufacturing same | |
EP3266907A4 (en) | Sic epitaxial wafer and method for manufacturing sic epitaxial wafer | |
PT2974822T (pt) | Método de divisão de substratos semicondutores finos | |
EP3260581C0 (en) | METHOD FOR PRODUCING A SINGLE-CRYSTALLINE EPITAXIAL SILICON CARBIDE WAFER AND SINGLE-CRYSTALLINE EPITAXIAL SILICON CARBIDE WAFER | |
SG10201601405QA (en) | Method of processing single-crystal substrate | |
PL3245158T3 (pl) | Urządzenie i sposób produkcji węglika krzemu |