SG11201701477QA - Voltage generation circuit - Google Patents

Voltage generation circuit

Info

Publication number
SG11201701477QA
SG11201701477QA SG11201701477QA SG11201701477QA SG11201701477QA SG 11201701477Q A SG11201701477Q A SG 11201701477QA SG 11201701477Q A SG11201701477Q A SG 11201701477QA SG 11201701477Q A SG11201701477Q A SG 11201701477QA SG 11201701477Q A SG11201701477Q A SG 11201701477QA
Authority
SG
Singapore
Prior art keywords
generation circuit
voltage generation
voltage
circuit
generation
Prior art date
Application number
SG11201701477QA
Other languages
English (en)
Inventor
Yoshinao Suzuki
Michio Nakagawa
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of SG11201701477QA publication Critical patent/SG11201701477QA/en

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Read Only Memory (AREA)
SG11201701477QA 2014-08-26 2014-08-26 Voltage generation circuit SG11201701477QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2014/072282 WO2016030962A1 (ja) 2014-08-26 2014-08-26 電圧発生回路

Publications (1)

Publication Number Publication Date
SG11201701477QA true SG11201701477QA (en) 2017-03-30

Family

ID=55398906

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201701477QA SG11201701477QA (en) 2014-08-26 2014-08-26 Voltage generation circuit

Country Status (4)

Country Link
US (1) US9985519B2 (ja)
CN (1) CN106664011B (ja)
SG (1) SG11201701477QA (ja)
WO (1) WO2016030962A1 (ja)

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CN107294376B (zh) * 2016-03-30 2020-08-07 中芯国际集成电路制造(上海)有限公司 电荷泵稳压器及存储器、物联网设备
CN109842292A (zh) * 2017-11-24 2019-06-04 北京兆易创新科技股份有限公司 一种电荷泵电路及nor flash
CN107992151B (zh) * 2017-12-12 2020-07-31 鄂尔多斯市源盛光电有限责任公司 电压控制电路及其方法、面板和显示装置
WO2020056725A1 (en) 2018-09-21 2020-03-26 Yangtze Memory Technologies Co., Ltd. Voltage detection system
CN108877696B (zh) * 2018-09-28 2020-05-01 京东方科技集团股份有限公司 像素电路及其驱动方法、显示面板及显示装置
CN109272962B (zh) * 2018-11-16 2021-04-27 京东方科技集团股份有限公司 像素内存储单元、像素内数据存储方法以及像素阵列
KR102611781B1 (ko) * 2019-06-19 2023-12-08 에스케이하이닉스 주식회사 차지 펌프 회로를 포함하는 반도체 장치
CN112037828A (zh) * 2020-11-09 2020-12-04 深圳市芯天下技术有限公司 电荷泵输出电压稳定检测方法、电路及非易失型存储器
IT202100002798A1 (it) * 2021-02-09 2022-08-09 St Microelectronics Srl Circuito regolatore, sistema e procedimento corrispondenti
KR20230020797A (ko) 2021-08-04 2023-02-13 에스케이하이닉스 주식회사 차지 펌프 회로를 포함하는 반도체 장치
CN116382409B (zh) * 2023-06-06 2023-08-15 上海灵动微电子股份有限公司 一种线性稳压电路系统及其控制方法

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US6617832B1 (en) * 2002-06-03 2003-09-09 Texas Instruments Incorporated Low ripple scalable DC-to-DC converter circuit
JP3733122B2 (ja) * 2003-03-27 2006-01-11 株式会社ディーブイイー 安定化電源回路
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JP4181441B2 (ja) * 2003-04-14 2008-11-12 株式会社リコー Dc−dcコンバータ
JP4257196B2 (ja) * 2003-12-25 2009-04-22 株式会社東芝 半導体装置および半導体装置の駆動方法
JP4717458B2 (ja) * 2004-03-30 2011-07-06 ローム株式会社 電圧生成装置
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JP4199706B2 (ja) * 2004-07-13 2008-12-17 富士通マイクロエレクトロニクス株式会社 降圧回路
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KR100748553B1 (ko) 2004-12-20 2007-08-10 삼성전자주식회사 리플-프리 고전압 발생회로 및 방법, 그리고 이를 구비한반도체 메모리 장치
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JP4855153B2 (ja) 2006-06-16 2012-01-18 ローム株式会社 電源装置、レギュレータ回路、チャージポンプ回路およびそれらを用いた電子機器
KR100809071B1 (ko) 2006-09-25 2008-03-03 삼성전자주식회사 고전압 발생 회로를 구비하는 반도체 장치 및 그 전압 발생방법
JP2008086165A (ja) 2006-09-28 2008-04-10 Toshiba Corp 電源装置
TWI357543B (en) * 2008-03-24 2012-02-01 Novatek Microelectronics Corp Apparatus of dynamic feed-back control charge pump
JP5072731B2 (ja) 2008-06-23 2012-11-14 株式会社東芝 定電圧昇圧電源
KR101511160B1 (ko) 2009-01-06 2015-04-13 삼성전자주식회사 차지 펌프 회로 및 이를 이용한 전압 변환 장치
JP2011253217A (ja) * 2010-05-31 2011-12-15 Renesas Electronics Corp 電源装置及び液晶パネルドライバic
KR101080208B1 (ko) 2010-09-30 2011-11-07 주식회사 하이닉스반도체 내부전압 발생회로 및 그를 이용한 반도체 장치
JP5087670B2 (ja) 2010-11-01 2012-12-05 株式会社東芝 電圧発生回路
US9154027B2 (en) * 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption

Also Published As

Publication number Publication date
CN106664011B (zh) 2019-06-11
CN106664011A (zh) 2017-05-10
WO2016030962A1 (ja) 2016-03-03
US20170163146A1 (en) 2017-06-08
US9985519B2 (en) 2018-05-29

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