SG11201701477QA - Voltage generation circuit - Google Patents
Voltage generation circuitInfo
- Publication number
- SG11201701477QA SG11201701477QA SG11201701477QA SG11201701477QA SG11201701477QA SG 11201701477Q A SG11201701477Q A SG 11201701477QA SG 11201701477Q A SG11201701477Q A SG 11201701477QA SG 11201701477Q A SG11201701477Q A SG 11201701477QA SG 11201701477Q A SG11201701477Q A SG 11201701477QA
- Authority
- SG
- Singapore
- Prior art keywords
- generation circuit
- voltage generation
- voltage
- circuit
- generation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2014/072282 WO2016030962A1 (ja) | 2014-08-26 | 2014-08-26 | 電圧発生回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201701477QA true SG11201701477QA (en) | 2017-03-30 |
Family
ID=55398906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201701477QA SG11201701477QA (en) | 2014-08-26 | 2014-08-26 | Voltage generation circuit |
Country Status (4)
Country | Link |
---|---|
US (1) | US9985519B2 (ja) |
CN (1) | CN106664011B (ja) |
SG (1) | SG11201701477QA (ja) |
WO (1) | WO2016030962A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107294376B (zh) * | 2016-03-30 | 2020-08-07 | 中芯国际集成电路制造(上海)有限公司 | 电荷泵稳压器及存储器、物联网设备 |
CN109842292A (zh) * | 2017-11-24 | 2019-06-04 | 北京兆易创新科技股份有限公司 | 一种电荷泵电路及nor flash |
CN107992151B (zh) * | 2017-12-12 | 2020-07-31 | 鄂尔多斯市源盛光电有限责任公司 | 电压控制电路及其方法、面板和显示装置 |
WO2020056725A1 (en) | 2018-09-21 | 2020-03-26 | Yangtze Memory Technologies Co., Ltd. | Voltage detection system |
CN108877696B (zh) * | 2018-09-28 | 2020-05-01 | 京东方科技集团股份有限公司 | 像素电路及其驱动方法、显示面板及显示装置 |
CN109272962B (zh) * | 2018-11-16 | 2021-04-27 | 京东方科技集团股份有限公司 | 像素内存储单元、像素内数据存储方法以及像素阵列 |
KR102611781B1 (ko) * | 2019-06-19 | 2023-12-08 | 에스케이하이닉스 주식회사 | 차지 펌프 회로를 포함하는 반도체 장치 |
CN112037828A (zh) * | 2020-11-09 | 2020-12-04 | 深圳市芯天下技术有限公司 | 电荷泵输出电压稳定检测方法、电路及非易失型存储器 |
IT202100002798A1 (it) * | 2021-02-09 | 2022-08-09 | St Microelectronics Srl | Circuito regolatore, sistema e procedimento corrispondenti |
KR20230020797A (ko) | 2021-08-04 | 2023-02-13 | 에스케이하이닉스 주식회사 | 차지 펌프 회로를 포함하는 반도체 장치 |
CN116382409B (zh) * | 2023-06-06 | 2023-08-15 | 上海灵动微电子股份有限公司 | 一种线性稳压电路系统及其控制方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3705842B2 (ja) | 1994-08-04 | 2005-10-12 | 株式会社ルネサステクノロジ | 半導体装置 |
US6617832B1 (en) * | 2002-06-03 | 2003-09-09 | Texas Instruments Incorporated | Low ripple scalable DC-to-DC converter circuit |
JP3733122B2 (ja) * | 2003-03-27 | 2006-01-11 | 株式会社ディーブイイー | 安定化電源回路 |
US7142040B2 (en) * | 2003-03-27 | 2006-11-28 | Device Engineering Co., Ltd. | Stabilized power supply circuit |
JP4181441B2 (ja) * | 2003-04-14 | 2008-11-12 | 株式会社リコー | Dc−dcコンバータ |
JP4257196B2 (ja) * | 2003-12-25 | 2009-04-22 | 株式会社東芝 | 半導体装置および半導体装置の駆動方法 |
JP4717458B2 (ja) * | 2004-03-30 | 2011-07-06 | ローム株式会社 | 電圧生成装置 |
JP4704099B2 (ja) | 2004-05-21 | 2011-06-15 | ローム株式会社 | 電源装置およびそれを用いた電子機器 |
JP4199706B2 (ja) * | 2004-07-13 | 2008-12-17 | 富士通マイクロエレクトロニクス株式会社 | 降圧回路 |
JP2006054959A (ja) * | 2004-08-11 | 2006-02-23 | Sony Corp | 電圧変換回路 |
KR100748553B1 (ko) | 2004-12-20 | 2007-08-10 | 삼성전자주식회사 | 리플-프리 고전압 발생회로 및 방법, 그리고 이를 구비한반도체 메모리 장치 |
KR100680441B1 (ko) | 2005-06-07 | 2007-02-08 | 주식회사 하이닉스반도체 | 안정적인 승압 전압을 발생하는 승압 전압 발생기 |
JP4791094B2 (ja) * | 2005-07-05 | 2011-10-12 | ルネサスエレクトロニクス株式会社 | 電源回路 |
US7710193B2 (en) | 2005-09-29 | 2010-05-04 | Hynix Semiconductor, Inc. | High voltage generator and word line driving high voltage generator of memory device |
KR100764740B1 (ko) | 2006-05-16 | 2007-10-08 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것을 위한 고전압 발생회로 |
KR100733953B1 (ko) | 2006-06-15 | 2007-06-29 | 삼성전자주식회사 | 플래시 메모리 장치의 전압 레귤레이터 |
JP4855153B2 (ja) | 2006-06-16 | 2012-01-18 | ローム株式会社 | 電源装置、レギュレータ回路、チャージポンプ回路およびそれらを用いた電子機器 |
KR100809071B1 (ko) | 2006-09-25 | 2008-03-03 | 삼성전자주식회사 | 고전압 발생 회로를 구비하는 반도체 장치 및 그 전압 발생방법 |
JP2008086165A (ja) | 2006-09-28 | 2008-04-10 | Toshiba Corp | 電源装置 |
TWI357543B (en) * | 2008-03-24 | 2012-02-01 | Novatek Microelectronics Corp | Apparatus of dynamic feed-back control charge pump |
JP5072731B2 (ja) | 2008-06-23 | 2012-11-14 | 株式会社東芝 | 定電圧昇圧電源 |
KR101511160B1 (ko) | 2009-01-06 | 2015-04-13 | 삼성전자주식회사 | 차지 펌프 회로 및 이를 이용한 전압 변환 장치 |
JP2011253217A (ja) * | 2010-05-31 | 2011-12-15 | Renesas Electronics Corp | 電源装置及び液晶パネルドライバic |
KR101080208B1 (ko) | 2010-09-30 | 2011-11-07 | 주식회사 하이닉스반도체 | 내부전압 발생회로 및 그를 이용한 반도체 장치 |
JP5087670B2 (ja) | 2010-11-01 | 2012-12-05 | 株式会社東芝 | 電圧発生回路 |
US9154027B2 (en) * | 2013-12-09 | 2015-10-06 | Sandisk Technologies Inc. | Dynamic load matching charge pump for reduced current consumption |
-
2014
- 2014-08-26 SG SG11201701477QA patent/SG11201701477QA/en unknown
- 2014-08-26 WO PCT/JP2014/072282 patent/WO2016030962A1/ja active Application Filing
- 2014-08-26 CN CN201480081451.0A patent/CN106664011B/zh active Active
-
2017
- 2017-02-23 US US15/440,255 patent/US9985519B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN106664011B (zh) | 2019-06-11 |
CN106664011A (zh) | 2017-05-10 |
WO2016030962A1 (ja) | 2016-03-03 |
US20170163146A1 (en) | 2017-06-08 |
US9985519B2 (en) | 2018-05-29 |
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