SG11201610501PA - Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor - Google Patents

Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor

Info

Publication number
SG11201610501PA
SG11201610501PA SG11201610501PA SG11201610501PA SG11201610501PA SG 11201610501P A SG11201610501P A SG 11201610501PA SG 11201610501P A SG11201610501P A SG 11201610501PA SG 11201610501P A SG11201610501P A SG 11201610501PA SG 11201610501P A SG11201610501P A SG 11201610501PA
Authority
SG
Singapore
Prior art keywords
absorber
manufacturing system
extreme ultraviolet
system therefor
ultraviolet lithography
Prior art date
Application number
SG11201610501PA
Other languages
English (en)
Inventor
Vinayak Vishwanath Hassan
Majeed A Foad
Cara Beasley
Ralf Hofmann
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201610501PA publication Critical patent/SG11201610501PA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
SG11201610501PA 2014-07-11 2015-07-08 Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor SG11201610501PA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462023507P 2014-07-11 2014-07-11
US14/620,123 US9581889B2 (en) 2014-07-11 2015-02-11 Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor
PCT/US2015/039533 WO2016007613A1 (en) 2014-07-11 2015-07-08 Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor

Publications (1)

Publication Number Publication Date
SG11201610501PA true SG11201610501PA (en) 2017-01-27

Family

ID=55064823

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201610501PA SG11201610501PA (en) 2014-07-11 2015-07-08 Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor

Country Status (9)

Country Link
US (2) US9581889B2 (zh)
EP (1) EP3167475B1 (zh)
JP (2) JP6626878B2 (zh)
KR (3) KR101831347B1 (zh)
CN (1) CN106663602B (zh)
MY (1) MY180479A (zh)
SG (1) SG11201610501PA (zh)
TW (2) TWI599672B (zh)
WO (1) WO2016007613A1 (zh)

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Also Published As

Publication number Publication date
TWI599672B (zh) 2017-09-21
KR20170032379A (ko) 2017-03-22
JP2017525998A (ja) 2017-09-07
MY180479A (en) 2020-11-30
US9581889B2 (en) 2017-02-28
JP2020064307A (ja) 2020-04-23
US20160011500A1 (en) 2016-01-14
KR20180019775A (ko) 2018-02-26
KR102252228B1 (ko) 2021-05-13
WO2016007613A1 (en) 2016-01-14
US20170131627A1 (en) 2017-05-11
JP6626878B2 (ja) 2019-12-25
TWI658165B (zh) 2019-05-01
KR20210055805A (ko) 2021-05-17
CN106663602B (zh) 2019-11-26
TW201742944A (zh) 2017-12-16
US10012897B2 (en) 2018-07-03
KR102291647B1 (ko) 2021-08-18
EP3167475A1 (en) 2017-05-17
TW201614093A (en) 2016-04-16
EP3167475A4 (en) 2018-04-18
JP6855556B2 (ja) 2021-04-07
EP3167475B1 (en) 2021-03-17
CN106663602A (zh) 2017-05-10
KR101831347B1 (ko) 2018-02-22

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