SG11201609463SA - Pellicle membrane, pellicle, original plate for exposure, exposure apparatus, and method of producing semiconductor device - Google Patents

Pellicle membrane, pellicle, original plate for exposure, exposure apparatus, and method of producing semiconductor device

Info

Publication number
SG11201609463SA
SG11201609463SA SG11201609463SA SG11201609463SA SG11201609463SA SG 11201609463S A SG11201609463S A SG 11201609463SA SG 11201609463S A SG11201609463S A SG 11201609463SA SG 11201609463S A SG11201609463S A SG 11201609463SA SG 11201609463S A SG11201609463S A SG 11201609463SA
Authority
SG
Singapore
Prior art keywords
pellicle
exposure
semiconductor device
original plate
producing semiconductor
Prior art date
Application number
SG11201609463SA
Other languages
English (en)
Inventor
Yosuke Ono
Kazuo Kohmura
Original Assignee
Mitsui Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemicals Inc filed Critical Mitsui Chemicals Inc
Publication of SG11201609463SA publication Critical patent/SG11201609463SA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
SG11201609463SA 2014-05-19 2015-05-12 Pellicle membrane, pellicle, original plate for exposure, exposure apparatus, and method of producing semiconductor device SG11201609463SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014103411 2014-05-19
PCT/JP2015/063634 WO2015178250A1 (ja) 2014-05-19 2015-05-12 ペリクル膜、ペリクル、露光原版、露光装置及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
SG11201609463SA true SG11201609463SA (en) 2016-12-29

Family

ID=54553923

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201609463SA SG11201609463SA (en) 2014-05-19 2015-05-12 Pellicle membrane, pellicle, original plate for exposure, exposure apparatus, and method of producing semiconductor device

Country Status (8)

Country Link
US (1) US10108084B2 (ko)
EP (1) EP3133442B1 (ko)
JP (1) JP6279722B2 (ko)
KR (2) KR102047588B1 (ko)
CN (1) CN106462052B (ko)
SG (1) SG11201609463SA (ko)
TW (1) TWI655497B (ko)
WO (1) WO2015178250A1 (ko)

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GB2534404A (en) * 2015-01-23 2016-07-27 Cnm Tech Gmbh Pellicle
US9835940B2 (en) * 2015-09-18 2017-12-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method to fabricate mask-pellicle system
WO2017179199A1 (ja) * 2016-04-15 2017-10-19 凸版印刷株式会社 ペリクル
KR102408195B1 (ko) * 2016-04-25 2022-06-13 에이에스엠엘 네델란즈 비.브이. Euv 리소그래피를 위한 멤브레인
JP6634601B2 (ja) * 2016-05-09 2020-01-22 パナソニックＩｐマネジメント株式会社 グラファイトプレートとその製造方法
KR102189172B1 (ko) * 2016-06-28 2020-12-09 미쯔이가가꾸가부시끼가이샤 펠리클막, 펠리클 프레임체, 펠리클 및 그 제조 방법
CN116594258A (zh) 2016-07-05 2023-08-15 三井化学株式会社 防护膜及其组件和组件框体、组件制造方法、曝光原版、曝光装置、半导体装置的制造方法
KR102649129B1 (ko) * 2016-11-16 2024-03-19 삼성전자주식회사 반도체 장치의 제조 방법
KR101813186B1 (ko) * 2016-11-30 2017-12-28 삼성전자주식회사 포토마스크용 펠리클과 이를 포함하는 레티클 및 리소그래피용 노광 장치
JP6978210B2 (ja) * 2017-03-02 2021-12-08 旭化成株式会社 ペリクル膜、及びペリクル膜の製造方法
JP6844443B2 (ja) * 2017-06-23 2021-03-17 信越化学工業株式会社 フォトリソグラフィ用ペリクル膜、ペリクル及びフォトマスク、露光方法並びに半導体デバイス又は液晶ディスプレイの製造方法
JP7451442B2 (ja) * 2017-10-10 2024-03-18 信越化学工業株式会社 Ｅｕｖ用ペリクルフレームの通気構造、ｅｕｖ用ペリクル、ｅｕｖ用ペリクル付露光原版、露光方法及び半導体の製造方法
EP3764160A4 (en) * 2018-03-09 2021-12-01 Kaneka Corporation FILM INCLUDING A GRAPHITE FILM
JP2021076620A (ja) * 2018-03-14 2021-05-20 株式会社カネカ 炭素質膜を含むペリクル及び炭素質膜を含むペリクルの製造方法
JP7213248B2 (ja) * 2018-07-06 2023-01-26 株式会社カネカ ペリクル複合体及びその製造方法
KR20200059061A (ko) 2018-11-20 2020-05-28 삼성전자주식회사 극자외선 리소그래피용 펠리클 및 그 제조방법
US11314169B2 (en) 2019-10-30 2022-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Robust, high transmission pellicle for extreme ultraviolet lithography systems
DE102020115130A1 (de) * 2019-10-30 2021-05-06 Taiwan Semiconductor Manufacturing Co., Ltd. Robuste membran mit hoher durchlässigkeit für lithografische extremes-ultraviolett-anlagen
JP7464384B2 (ja) 2019-12-11 2024-04-09 Ｄｉｃグラフィックス株式会社 金属印刷用インキ
DE102020210857A1 (de) 2020-08-27 2021-08-26 Carl Zeiss Smt Gmbh Lithographie-system mit pellikel und verfahren zum betrieb desselben
NL2036344A (en) * 2020-09-03 2023-12-11 Asml Netherlands Bv Pellicle membrane for a lithographic apparatus
KR20230016970A (ko) * 2021-07-27 2023-02-03 (주)휴넷플러스 요철 구조가 형성된 펠리클의 제조방법
KR20230016968A (ko) * 2021-07-27 2023-02-03 (주)휴넷플러스 관통홀 구조가 형성된 펠리클의 제조방법

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Also Published As

Publication number Publication date
JP6279722B2 (ja) 2018-02-14
US20170090279A1 (en) 2017-03-30
TWI655497B (zh) 2019-04-01
CN106462052A (zh) 2017-02-22
KR20180072844A (ko) 2018-06-29
EP3133442A4 (en) 2017-12-13
JPWO2015178250A1 (ja) 2017-04-20
KR102047588B1 (ko) 2019-11-21
WO2015178250A1 (ja) 2015-11-26
EP3133442B1 (en) 2019-02-13
CN106462052B (zh) 2019-08-16
US10108084B2 (en) 2018-10-23
EP3133442A1 (en) 2017-02-22
TW201610562A (zh) 2016-03-16
KR20160145073A (ko) 2016-12-19

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