SG11201602922RA - Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof - Google Patents

Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof

Info

Publication number
SG11201602922RA
SG11201602922RA SG11201602922RA SG11201602922RA SG11201602922RA SG 11201602922R A SG11201602922R A SG 11201602922RA SG 11201602922R A SG11201602922R A SG 11201602922RA SG 11201602922R A SG11201602922R A SG 11201602922RA SG 11201602922R A SG11201602922R A SG 11201602922RA
Authority
SG
Singapore
Prior art keywords
manufacturing
extreme ultraviolet
lithography system
chuck assembly
ultraviolet lithography
Prior art date
Application number
SG11201602922RA
Other languages
English (en)
Inventor
Majeed A Foad
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201602922RA publication Critical patent/SG11201602922RA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG11201602922RA 2013-12-22 2014-12-19 Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof SG11201602922RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361919781P 2013-12-22 2013-12-22
PCT/US2014/071698 WO2015095808A1 (en) 2013-12-22 2014-12-19 Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof

Publications (1)

Publication Number Publication Date
SG11201602922RA true SG11201602922RA (en) 2016-07-28

Family

ID=53403784

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201602922RA SG11201602922RA (en) 2013-12-22 2014-12-19 Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof
SG10201805252RA SG10201805252RA (en) 2013-12-22 2014-12-19 Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201805252RA SG10201805252RA (en) 2013-12-22 2014-12-19 Extreme ultraviolet lithography system having chuck assembly and method of manufacturing thereof

Country Status (7)

Country Link
US (1) US10691013B2 (ko)
JP (1) JP6647198B2 (ko)
KR (1) KR102340280B1 (ko)
CN (1) CN105684128A (ko)
SG (2) SG11201602922RA (ko)
TW (1) TWI646576B (ko)
WO (1) WO2015095808A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8192484B2 (en) * 2000-12-12 2012-06-05 Cardiatis S.A. Stent for blood flow improvement
US6897940B2 (en) * 2002-06-21 2005-05-24 Nikon Corporation System for correcting aberrations and distortions in EUV lithography
KR100566152B1 (ko) * 2002-08-30 2006-03-31 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스 제조방법
JP4311711B2 (ja) * 2003-02-24 2009-08-12 キヤノン株式会社 露光装置及びデバイス製造方法
JP4262031B2 (ja) * 2003-08-19 2009-05-13 キヤノン株式会社 露光装置及びデバイスの製造方法
JP3894562B2 (ja) 2003-10-01 2007-03-22 キヤノン株式会社 基板吸着装置、露光装置およびデバイス製造方法
JP3814598B2 (ja) * 2003-10-02 2006-08-30 キヤノン株式会社 温度調整装置、露光装置及びデバイス製造方法
JP2005150527A (ja) * 2003-11-18 2005-06-09 Canon Inc 保持装置、それを用いた露光装置およびデバイス製造方法
US7081956B1 (en) 2003-12-04 2006-07-25 Advanced Micro Devices, Inc. Method and device for determining reflection lens pupil transmission distribution and illumination intensity distribution in reflective imaging system
US7407729B2 (en) 2004-08-05 2008-08-05 Infineon Technologies Ag EUV magnetic contrast lithography mask and manufacture thereof
US7678511B2 (en) * 2006-01-12 2010-03-16 Asahi Glass Company, Limited Reflective-type mask blank for EUV lithography
DE202006007122U1 (de) 2006-05-03 2006-09-07 Retzlaff, Udo, Dr. Mobiler, transportabler, elektrostatischer Substrathalter aus Halbleitermaterial
US7817252B2 (en) 2006-09-29 2010-10-19 Intel Corporation Holder for carrying a photolithography mask in a flattened condition
JP2009194204A (ja) * 2008-02-15 2009-08-27 Nikon Corp 露光装置、露光システムおよびデバイス製造方法
JP2010122304A (ja) * 2008-11-17 2010-06-03 Dainippon Printing Co Ltd 反射型マスクブランクス、反射型マスク、反射型マスクブランクスの製造方法、および、反射型マスクの製造方法
JP5073835B2 (ja) * 2008-11-26 2012-11-14 Ｈｏｙａ株式会社 マスクブランク用基板
WO2011018295A1 (en) * 2009-08-14 2011-02-17 Asml Netherlands B.V. Euv radiation system and lithographic apparatus
JP5732257B2 (ja) * 2010-01-15 2015-06-10 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、デバイス製造方法およびコンピュータ読取可能媒体
JP2012043992A (ja) * 2010-08-19 2012-03-01 Nikon Corp 清掃装置、清掃方法、露光装置、露光方法及びデバイスの製造方法
US8426085B2 (en) * 2010-12-02 2013-04-23 Intermolecular, Inc. Method and apparatus for EUV mask having diffusion barrier
US8520360B2 (en) 2011-07-19 2013-08-27 Lam Research Corporation Electrostatic chuck with wafer backside plasma assisted dechuck
WO2013062104A1 (ja) * 2011-10-28 2013-05-02 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランクの製造方法
US9383637B2 (en) * 2012-03-23 2016-07-05 Hoya Corporation Substrate with multilayer reflective film, reflective mask blank for EUV lithography, method of manufacturing reflective mask for EUV lithography and method of manufacturing semiconductor device
JP3199713U (ja) * 2012-09-07 2015-09-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 薄型基板のための携帯用静電チャックキャリア
JP2014127630A (ja) 2012-12-27 2014-07-07 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクおよびその製造方法
US9612521B2 (en) * 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
NL2012452A (en) * 2013-04-09 2014-10-13 Asml Netherlands Bv Support structure, associated apparatusses and methods.
US9405204B2 (en) * 2013-09-18 2016-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of overlay in extreme ultra-violet (EUV) lithography

Also Published As

Publication number Publication date
CN105684128A (zh) 2016-06-15
US10691013B2 (en) 2020-06-23
JP6647198B2 (ja) 2020-02-14
US20160342096A1 (en) 2016-11-24
JP2017502321A (ja) 2017-01-19
TWI646576B (zh) 2019-01-01
KR102340280B1 (ko) 2021-12-15
SG10201805252RA (en) 2018-08-30
WO2015095808A1 (en) 2015-06-25
TW201535472A (zh) 2015-09-16
KR20160100915A (ko) 2016-08-24

Similar Documents

Publication Publication Date Title
SG10201707081YA (en) Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
SG11201610504QA (en) Extreme ultraviolet capping layer and method of manufacturing and lithography thereof
SG11201604722WA (en) Glass ceramic for ultraviolet lithography and method of manufacturing thereof
SG11201610501PA (en) Planarized extreme ultraviolet lithography blank with absorber and manufacturing system therefor
GB2513214B (en) Systems and methods for turbinate reduction
SG11201506465QA (en) Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
EP3025565A4 (en) System and method for generation of extreme ultraviolet light
EP2967771A4 (en) SYSTEM AND METHOD FOR PRODUCING DENTIERS
GB201401248D0 (en) Method of manufacture
EP3010024A4 (en) Tubular body and method for manufacturing tubular body
EP3088093A4 (en) Method of manufacturing component having hat-shaped cross section
EP3039993A4 (en) Cushion having embedded automatically-charging air tubes and method for manufacturing same
SG11201602967SA (en) Extreme ultraviolet (euv) substrate inspection system with simplified optics and method of manufacturing thereof
SG11201506511PA (en) Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
GB201406038D0 (en) Autotroph-based deodorizer and method for manufacturing the same
EP3052064A4 (en) Method of forming an absorbent structure
SG11201508847WA (en) Electroformed component and method for manufacturing same
SG11201503368TA (en) Method of fabricating semiconductor devices
GB201413054D0 (en) Semiconductor assembly and method of manufacture
EP2985541A4 (en) DUCT AND METHOD FOR MANUFACTURING THE SAME
EP3035972A4 (en) Scented wafer
EP2983017A4 (en) OPTICAL FILM AND METHOD FOR THE PRODUCTION THEREOF
FI3036293T3 (fi) Menetelmä orgaanisten onttojen hiukkasten valmistamiseksi
GB201322931D0 (en) Method of etching
GB201305231D0 (en) Method of Manufacture