SG11201506379XA - Composition for forming fine resist pattern, and pattern formation method using same - Google Patents

Composition for forming fine resist pattern, and pattern formation method using same

Info

Publication number
SG11201506379XA
SG11201506379XA SG11201506379XA SG11201506379XA SG11201506379XA SG 11201506379X A SG11201506379X A SG 11201506379XA SG 11201506379X A SG11201506379X A SG 11201506379XA SG 11201506379X A SG11201506379X A SG 11201506379XA SG 11201506379X A SG11201506379X A SG 11201506379XA
Authority
SG
Singapore
Prior art keywords
composition
same
formation method
forming fine
pattern
Prior art date
Application number
SG11201506379XA
Other languages
English (en)
Inventor
Nagahara Tatsuro
Sekito Takashi
Yamamoto Kazuma
Kobayashi Masakazu
Satake Noboru
Ishii Masahiro
Original Assignee
Az Electronic Materials Luxembourg Sarl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Luxembourg Sarl filed Critical Az Electronic Materials Luxembourg Sarl
Publication of SG11201506379XA publication Critical patent/SG11201506379XA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L39/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
    • C08L39/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/02—Polyamines
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D139/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Coating compositions based on derivatives of such polymers
    • C09D139/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Materials Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
SG11201506379XA 2013-03-05 2014-03-14 Composition for forming fine resist pattern, and pattern formation method using same SG11201506379XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013043177A JP6157151B2 (ja) 2013-03-05 2013-03-05 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
PCT/JP2014/056983 WO2014136991A1 (ja) 2013-03-05 2014-03-14 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法

Publications (1)

Publication Number Publication Date
SG11201506379XA true SG11201506379XA (en) 2015-09-29

Family

ID=51491497

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201506379XA SG11201506379XA (en) 2013-03-05 2014-03-14 Composition for forming fine resist pattern, and pattern formation method using same

Country Status (8)

Country Link
US (1) US9411232B2 (https=)
EP (1) EP2975462B1 (https=)
JP (1) JP6157151B2 (https=)
KR (1) KR101873727B1 (https=)
CN (1) CN105103053B (https=)
IL (1) IL240732B (https=)
SG (1) SG11201506379XA (https=)
WO (1) WO2014136991A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6180212B2 (ja) * 2013-07-12 2017-08-16 東京応化工業株式会社 パターン微細化用被覆剤
JP6278670B2 (ja) * 2013-11-25 2018-02-14 東京応化工業株式会社 パターン微細化用被覆剤
JP6309802B2 (ja) * 2014-03-26 2018-04-11 東京応化工業株式会社 パターン微細化用被覆剤
TW201627781A (zh) * 2014-10-14 2016-08-01 Ａｚ電子材料盧森堡有限公司 光阻圖案處理用組成物及使用其之圖案形成方法
JP6722433B2 (ja) * 2015-09-30 2020-07-15 東京応化工業株式会社 レジストパターン形成方法及びパターン厚肉化用ポリマー組成物
JP6503206B2 (ja) 2015-03-19 2019-04-17 東京応化工業株式会社 レジストパターン修復方法
US10162265B2 (en) * 2015-12-09 2018-12-25 Rohm And Haas Electronic Materials Llc Pattern treatment methods
JP2017129774A (ja) * 2016-01-21 2017-07-27 凸版印刷株式会社 緑色感光性着色組成物、それを用いたカラーフィルタ及びカラー表示装置
US10340206B2 (en) * 2016-08-05 2019-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Dense redistribution layers in semiconductor packages and methods of forming the same
KR102158579B1 (ko) * 2019-01-25 2020-09-22 (주)화백엔지니어링 Pcb 현상공정에서 스컴 방지를 위한 반응성 계면활성제가 함유된 현상 조성물 및 이의 제어시스템
JP2022096214A (ja) 2020-12-17 2022-06-29 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング 厚膜化されたレジストパターンの製造方法、厚膜化溶液、および加工基板の製造方法
EP4684249A1 (en) 2023-03-20 2026-01-28 Merck Patent GmbH Thickening composition, method for manufacturing thickened resist pattern, and method for manufacturing processed substrate

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3071401B2 (ja) 1996-07-05 2000-07-31 三菱電機株式会社 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置
TW372337B (en) * 1997-03-31 1999-10-21 Mitsubishi Electric Corp Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus
JP3662870B2 (ja) 2001-07-05 2005-06-22 東京応化工業株式会社 レジストパターン微細化用被覆形成剤及びそれを用いた微細レジストパターン形成方法
US6916594B2 (en) * 2002-12-30 2005-07-12 Hynix Semiconductor Inc. Overcoating composition for photoresist and method for forming photoresist pattern using the same
KR101076623B1 (ko) * 2003-07-17 2011-10-27 에이제토 엘렉토로닉 마티리알즈 가부시키가이샤 미세 패턴 형성 재료 및 이를 사용한 미세 패턴 형성방법
JP4485241B2 (ja) 2004-04-09 2010-06-16 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物およびそれを用いたパターン形成方法
JP2006011054A (ja) * 2004-06-25 2006-01-12 Shin Etsu Chem Co Ltd リンス液及びこれを用いたレジストパターン形成方法
JP4679997B2 (ja) * 2004-08-31 2011-05-11 Ａｚエレクトロニックマテリアルズ株式会社 微細パターン形成方法
US7595141B2 (en) * 2004-10-26 2009-09-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP4566862B2 (ja) * 2005-08-25 2010-10-20 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
JP4657899B2 (ja) * 2005-11-30 2011-03-23 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、半導体装置及びその製造方法
JP5000260B2 (ja) * 2006-10-19 2012-08-15 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液
US8148052B2 (en) * 2006-11-14 2012-04-03 Nxp B.V. Double patterning for lithography to increase feature spatial density
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
US7745077B2 (en) 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP5425514B2 (ja) * 2009-04-16 2014-02-26 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細パターン形成方法
TWI403520B (zh) * 2009-05-25 2013-08-01 信越化學工業股份有限公司 光阻改質用組成物及圖案形成方法
JP5705669B2 (ja) * 2011-07-14 2015-04-22 メルクパフォーマンスマテリアルズＩｐ合同会社 微細パターン形成用組成物およびそれを用いた微細化されたパターン形成方法
JP6239833B2 (ja) * 2013-02-26 2017-11-29 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法

Also Published As

Publication number Publication date
WO2014136991A1 (ja) 2014-09-12
EP2975462A1 (en) 2016-01-20
IL240732B (en) 2018-05-31
IL240732A0 (en) 2015-10-29
EP2975462B1 (en) 2020-12-09
CN105103053A (zh) 2015-11-25
JP2014170190A (ja) 2014-09-18
JP6157151B2 (ja) 2017-07-05
CN105103053B (zh) 2019-12-27
US9411232B2 (en) 2016-08-09
KR20160123217A (ko) 2016-10-25
KR101873727B1 (ko) 2018-07-04
EP2975462A4 (en) 2016-11-23
US20160011508A1 (en) 2016-01-14

Similar Documents

Publication Publication Date Title
EP2980831A4 (en) LAYERED FOIL FORMATION COMPOSITION FOR PRINTING AND STRUCTURAL FORMING METHOD
IL240732A0 (en) Compounds for creating a fine resist pattern, and a method for creating the resist pattern using a compound
EP2955575A4 (en) RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL DERIVATIVE USED IN THIS METHOD
SG11201607443XA (en) Resist composition and method for forming resist pattern
IL240745A0 (en) A composition for creating a fine pattern of resist and a method for creating a pattern using it
SG11201603069RA (en) Ultraviolet-ray-curable organopolysiloxane composition, and method for producing printing material
EP3040777A4 (en) Pattern forming method using resist underlayer film
EP3229075A4 (en) Photoresist composition, method for manufacturing same, and method for forming resist pattern
SG11201400460WA (en) Composition for forming fine resist pattern and pattern forming method using same
SG11201706306SA (en) Compound, resist composition, and method for forming resist pattern using it
TWI561918B (en) Sulfonium salt, resist composition, and patterning process
SG11201501629VA (en) Composition for forming fine resist pattern and pattern formation method using same
EP2982786A4 (en) METHOD FOR KNITTING MESH AND KNITTED FABRIC
SG11201809977QA (en) Self-assembly composition for pattern formation and pattern forming method
SG11201509964UA (en) Retainer, method for producing same and use thereof
TWI563536B (en) Pattern forming method, method of manufacturing electronic device by using the same, and electronic device
EP2958113A4 (en) COMPOSITION FOR FORMING A CONDUCTIVE PATTERN, METHOD FOR FORMING A CONDUCTIVE PATTERN USING THE SAME, AND RESIN STRUCTURE HAVING A CONDUCTIVE PATTERN
EP2980169A4 (en) COMPOSITION FOR FORMING CONDUCTIVE FILM, AND METHOD FOR MANUFACTURING CONDUCTIVE FILM EMPLOYING THE SAME
KR20180084880A (ko) 패턴 형성용 자기 조직화 조성물 및 패턴 형성 방법
SG11201503912WA (en) Composition for forming overlay film, and resist pattern formation method using same
SG11201508969QA (en) Method for producing hybrid substrate, and hybrid substrate
IL242211A0 (en) A method for creating a template, a method for making an electronic device and an electronic device
GB201314978D0 (en) Method for HIP can manufacture, and can
PL2956491T3 (pl) Duroplasty, sposoby wytwarzania, zastosowania i kompozycje składników
SG11201507951SA (en) Method for producing 2,7-octadien-1-ol