SG11201405971YA - Additive for preparing suede on monocrystalline silicon chip anduse method thereof - Google Patents

Additive for preparing suede on monocrystalline silicon chip anduse method thereof

Info

Publication number
SG11201405971YA
SG11201405971YA SG11201405971YA SG11201405971YA SG11201405971YA SG 11201405971Y A SG11201405971Y A SG 11201405971YA SG 11201405971Y A SG11201405971Y A SG 11201405971YA SG 11201405971Y A SG11201405971Y A SG 11201405971YA SG 11201405971Y A SG11201405971Y A SG 11201405971YA
Authority
SG
Singapore
Prior art keywords
anduse
additive
silicon chip
monocrystalline silicon
preparing suede
Prior art date
Application number
SG11201405971YA
Inventor
Liming Fu
Peiliang Chen
Original Assignee
Changzhou Shichuang Energy Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou Shichuang Energy Technology Co Ltd filed Critical Changzhou Shichuang Energy Technology Co Ltd
Publication of SG11201405971YA publication Critical patent/SG11201405971YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
SG11201405971YA 2013-09-04 2013-12-17 Additive for preparing suede on monocrystalline silicon chip anduse method thereof SG11201405971YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201310394735.2A CN103451739B (en) 2013-09-04 2013-09-04 Fine-hair maring using monocrystalline silicon slice additive and using method thereof
PCT/CN2013/089672 WO2015032153A1 (en) 2013-09-04 2013-12-17 Monocrystalline silicon wafer texturizing additive and use thereof

Publications (1)

Publication Number Publication Date
SG11201405971YA true SG11201405971YA (en) 2015-04-29

Family

ID=49734557

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201405971YA SG11201405971YA (en) 2013-09-04 2013-12-17 Additive for preparing suede on monocrystalline silicon chip anduse method thereof

Country Status (11)

Country Link
US (1) US9705016B2 (en)
EP (1) EP2891637B1 (en)
JP (1) JP2016532305A (en)
KR (1) KR101613541B1 (en)
CN (1) CN103451739B (en)
ES (1) ES2584983T3 (en)
LT (1) LT2891637T (en)
MY (1) MY170623A (en)
SG (1) SG11201405971YA (en)
TW (1) TWI532824B (en)
WO (1) WO2015032153A1 (en)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103710705B (en) * 2013-12-23 2016-01-20 北京合德丰材料科技有限公司 A kind of additive of polycrystalline silicon wafer acidity texture preparation liquid and application thereof
CN104576831B (en) * 2014-12-31 2016-10-12 江苏顺风光电科技有限公司 A kind of monocrystalline silicon piece is without alcohol process for etching and flocking additive thereof
CN104651949B (en) * 2015-02-11 2017-09-29 常州君合科技股份有限公司 A kind of polycrystalline silicon texturing additive
CN104988581A (en) * 2015-08-04 2015-10-21 绍兴拓邦电子科技有限公司 Monocrystalline silicon piece spraying and texturing additive with high boiling point
CN105133027A (en) * 2015-08-21 2015-12-09 合肥中南光电有限公司 Small-textured-face monocrystalline silicon slice texturing solution and preparation method thereof
CN105113009A (en) * 2015-08-21 2015-12-02 合肥中南光电有限公司 Environment-friendly monocrystalline silicon piece texturing liquid and preparation method thereof
CN105154984A (en) * 2015-08-21 2015-12-16 合肥中南光电有限公司 Easy-to-clean monocrystalline silicon wafer texturing solution and preparation method thereof
CN105113016A (en) * 2015-08-21 2015-12-02 合肥中南光电有限公司 Deoiling and dewaxing monocrystalline silicon wafer texturing liquid and preparing method thereof
CN105113014A (en) * 2015-08-21 2015-12-02 合肥中南光电有限公司 Monocrystalline silicon wafer texturization liquid capable of removing peculiar smells and preparation method thereof
CN105113013A (en) * 2015-08-21 2015-12-02 合肥中南光电有限公司 Efficient and environment-friendly monocrystalline silicon piece texture surface making liquid and preparation method thereof
CN105133023A (en) * 2015-08-21 2015-12-09 合肥中南光电有限公司 Low-volatility monocrystalline silicon slice texturing solution and preparation method thereof
CN105133026A (en) * 2015-08-21 2015-12-09 合肥中南光电有限公司 Low-damage monocrystalline silicon slice texturing solution and preparation method thereof
CN105040108B (en) * 2015-08-21 2017-11-17 浙江启鑫新能源科技股份有限公司 The etching method of polysilicon solar cell
CN105133025A (en) * 2015-08-21 2015-12-09 合肥中南光电有限公司 High-efficiency monocrystalline silicon slice texturing solution and preparation method thereof
CN105113015A (en) * 2015-08-21 2015-12-02 合肥中南光电有限公司 Low-reflectivity monocrystalline silicon piece texture surface making liquid and preparation method thereof
CN105133030A (en) * 2015-08-25 2015-12-09 合肥中南光电有限公司 Long-acting silicon wafer texture-etchant and preparation method therefor
CN105133031A (en) * 2015-08-25 2015-12-09 合肥中南光电有限公司 Bamboo extraction solution silicon wafer texture-etchant and preparation method therefor
CN105133028A (en) * 2015-08-25 2015-12-09 合肥中南光电有限公司 Antibacterial mildewproof silicon wafer texture-etchant and preparation method therefor
CN108630786A (en) * 2016-06-27 2018-10-09 苏州阿特斯阳光电力科技有限公司 A kind of preparation method of crystal silicon solar energy battery suede structure
CN106835288A (en) * 2016-12-30 2017-06-13 德清丽晶能源科技有限公司 A kind of etching method of monocrystalline silicon piece
CN106521636A (en) * 2016-12-30 2017-03-22 德清丽晶能源科技有限公司 Single crystal wafer texturing additive
CN106833954B (en) * 2017-01-23 2020-08-11 常州时创能源股份有限公司 Additive of monocrystalline silicon piece texturing pre-cleaning liquid and application thereof
CN109427930B (en) * 2017-09-04 2022-02-25 苏州易益新能源科技有限公司 Method for selectively preparing suede on surface of crystal silicon wafer
CN107805845B (en) * 2017-10-23 2020-06-09 常州时创能源股份有限公司 Reaming process of polycrystalline black silicon
CN107964684A (en) * 2017-10-27 2018-04-27 德清丽晶能源科技有限公司 A kind of etching method of monocrystalline silicon piece used for solar batteries
CN107955973A (en) * 2017-10-27 2018-04-24 德清丽晶能源科技有限公司 A kind of etching method of battery monocrystalline silicon piece
CN107964685A (en) * 2017-10-27 2018-04-27 德清丽晶能源科技有限公司 A kind of etching method of monocrystalline silicon piece
CN107964686A (en) * 2017-10-27 2018-04-27 德清丽晶能源科技有限公司 A kind of Woolen-making liquid for fine-hair maring using monocrystalline silicon slice
CN107747131A (en) * 2017-10-27 2018-03-02 德清丽晶能源科技有限公司 A kind of fine-hair maring using monocrystalline silicon slice additive
CN107747132A (en) * 2017-10-27 2018-03-02 德清丽晶能源科技有限公司 A kind of etching method of monocrystalline silicon chip of solar cell
CN107747126A (en) * 2017-11-03 2018-03-02 通威太阳能（安徽）有限公司 A kind of monocrystalline silicon is without alcohol flocking additive, Woolen-making liquid and its application method
CN107955974B (en) * 2018-01-09 2020-06-09 常州时创能源股份有限公司 Texturing additive for inverted pyramid textured monocrystalline silicon wafer and application thereof
CN108221057B (en) * 2018-01-18 2020-05-08 西安润威光电科技有限公司 Method for preparing silicon solar cell texture by using graphene oxide-based crystalline silicon texture making additive
CN108221050B (en) * 2018-01-19 2019-12-31 温岭汉德高分子科技有限公司 Monocrystalline silicon piece with double-peak pyramid suede structure
CN108219071B (en) * 2018-01-19 2020-03-10 温岭汉德高分子科技有限公司 Preparation method of chondroitin sulfate-poly (vinylpyrrolidone-vinylpyridine) copolymer for texturing monocrystalline silicon wafers
CN108250363B (en) * 2018-01-19 2020-04-10 温岭汉德高分子科技有限公司 Monocrystalline silicon texturing additive
CN108360071B (en) * 2018-02-25 2020-11-20 温岭汉德高分子科技有限公司 Texturing method of low-reflectivity monocrystalline silicon wafer
CN108660510A (en) * 2018-05-10 2018-10-16 天津赤霄科技有限公司 A kind of manufacture of novel fine-hair maring using monocrystalline silicon slice additive and simple etching method
CN110042474A (en) * 2019-05-18 2019-07-23 上海汉遥新材料科技有限公司 A kind of monocrystaline silicon solar cell flocking additive and its application
CN110257072A (en) * 2019-06-13 2019-09-20 常州时创能源科技有限公司 Silicon wafer one texture-etching side and etching edge additive and its application
CN110528086A (en) * 2019-08-31 2019-12-03 绍兴拓邦电子科技有限公司 Flocking additive and its etching method for silicon heterogenous solar battery
CN111139531A (en) * 2020-03-18 2020-05-12 常州时创能源股份有限公司 Texturing additive for monocrystalline silicon wafer and application thereof
CN111455467A (en) * 2020-04-09 2020-07-28 中国科学院微电子研究所 Monocrystalline silicon texturing additive, texturing method and textured monocrystalline silicon piece preparation method
CN111354840B (en) * 2020-04-22 2020-11-03 一道新能源科技(衢州)有限公司 Preparation method of selective emitter double-sided PERC solar cell
CN111593412B (en) * 2020-05-25 2021-03-30 常州时创能源股份有限公司 Additive for chain type texture surface making of monocrystalline silicon piece and application thereof
CN111593413A (en) * 2020-06-30 2020-08-28 常州时创能源股份有限公司 Additive for monocrystalline silicon wafer chain type machine texturing and application thereof
CN112080348A (en) * 2020-09-29 2020-12-15 常州时创能源股份有限公司 Silicon wafer cleaning additive and application thereof
CN113668066A (en) * 2021-08-19 2021-11-19 常州时创能源股份有限公司 Texturing additive for rapid texturing and application
CN114318549A (en) * 2021-11-30 2022-04-12 嘉兴市小辰光伏科技有限公司 Monocrystalline silicon texturing additive for weak rough polishing process and use method
CN114318550A (en) * 2021-12-15 2022-04-12 嘉兴市小辰光伏科技有限公司 Additive for secondary texturing of monocrystalline silicon and texturing process thereof
CN115216301B (en) * 2022-06-23 2023-08-29 嘉兴学院 Texturing solution for monocrystalline silicon and texturing method
CN115478327B (en) * 2022-09-23 2024-02-27 浙江奥首材料科技有限公司 Monocrystalline silicon etching texturing additive, monocrystalline silicon etching texturing liquid containing monocrystalline silicon etching texturing additive, preparation method and application of monocrystalline silicon etching texturing additive
CN115820256A (en) * 2022-11-25 2023-03-21 嘉兴市小辰光伏科技有限公司 Additive for improving uniformity of texture of solar cell and application process thereof
CN116004233A (en) * 2022-12-12 2023-04-25 嘉兴市小辰光伏科技有限公司 Etching additive for improving uniformity of textured surface of silicon wafer and use method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3901565B2 (en) * 2002-04-15 2007-04-04 富士フイルム株式会社 Heat sensitive planographic printing plate
DE102007058829A1 (en) * 2007-12-06 2009-06-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Texture and cleaning medium for surface treatment of wafers and their use
CN102017176A (en) * 2008-03-25 2011-04-13 应用材料股份有限公司 Surface cleaning and texturing process for crystalline solar cells
US8329046B2 (en) 2009-02-05 2012-12-11 Asia Union Electronic Chemical Corporation Methods for damage etch and texturing of silicon single crystal substrates
US20120295447A1 (en) 2010-11-24 2012-11-22 Air Products And Chemicals, Inc. Compositions and Methods for Texturing of Silicon Wafers
CN102010796B (en) * 2010-12-25 2012-02-15 江西旭阳雷迪高科技股份有限公司 Cleaning liquid for solar polycrystalline silicon wafer
WO2013100318A1 (en) * 2011-12-26 2013-07-04 동우화인켐 주식회사 Texture etchant composition for crystalline silicon wafer, and texture etching method
US8986559B2 (en) * 2012-02-29 2015-03-24 Avantor Performance Materials, Inc. Compositions and methods for texturing polycrystalline silicon wafers
CN102586888A (en) * 2012-03-15 2012-07-18 苏州先拓光伏科技有限公司 Non-alcoholic monocrystalline silicon flock making additive
CN102978710A (en) * 2012-08-13 2013-03-20 杭州道乐太阳能技术有限公司 Silicon solar cell surface light trapping structure and preparation method thereof
CN102839427B (en) * 2012-08-28 2015-01-21 揭阳中诚集团有限公司 Mono-crystalline silicon piece texturing alcohol-free additives and using method thereof
CN102888657B (en) * 2012-10-22 2015-04-15 江苏荣马新能源有限公司 Additive for fluffing agent of crystalline silicon solar cell
CN102952650B (en) * 2012-11-16 2014-07-02 绍兴拓邦电子科技有限公司 Washing agent and washing process for solar cell silicon wafer washing agent and washing process thereof
CN102912451B (en) * 2012-11-21 2016-01-20 贵州威顿晶磷电子材料股份有限公司 A kind of fine-hair maring using monocrystalline silicon slice additive
CN103132079B (en) * 2013-02-07 2015-07-08 睿纳能源科技（上海）有限公司 Additive for acid texturing of diamond-wire-cutting polycrystalline silicon slices and application method thereof

Also Published As

Publication number Publication date
KR101613541B1 (en) 2016-04-19
CN103451739A (en) 2013-12-18
LT2891637T (en) 2016-10-10
EP2891637A4 (en) 2015-08-26
JP2016532305A (en) 2016-10-13
TW201416417A (en) 2014-05-01
KR20150056748A (en) 2015-05-27
ES2584983T3 (en) 2016-09-30
TWI532824B (en) 2016-05-11
MY170623A (en) 2019-08-21
EP2891637B1 (en) 2016-06-01
EP2891637A1 (en) 2015-07-08
US20160284880A1 (en) 2016-09-29
WO2015032153A1 (en) 2015-03-12
US9705016B2 (en) 2017-07-11
CN103451739B (en) 2016-01-20

Similar Documents

Publication Publication Date Title
SG11201405971YA (en) Additive for preparing suede on monocrystalline silicon chip anduse method thereof
SG11201405972TA (en) Additive for preparing suede on polycrystalline silicon chip and use method thereof
EP2863440A4 (en) Silicon carbide semiconductor device and method for producing same
PL2881499T3 (en) Method for growing silicon carbide crystal
EP2863417A4 (en) Silicon carbide semiconductor device and method for producing same
SG10201709859SA (en) Semiconductor device and method for driving semiconductor device
EP2985614A4 (en) Production method for semiconductor device
SG11201508398TA (en) Silicon wafer polishing composition
EP3091567A4 (en) Silicon wafer pre-alignment device and method therefor
GB2514918B (en) Nitride semiconductor substrate
SG11201507962XA (en) Method for polishing silicon wafer and method for producing epitaxial wafer
EP3158582A4 (en) Photopatternable silicones for wafer level z-axis thermal interposer
EP2804215A4 (en) Method for manufacturing silicon carbide semiconductor device
EP3067920A4 (en) Semiconductor device and method for producing same
SG10201404664QA (en) Anneal module for semiconductor wafers
EP2993690A4 (en) Silicon carbide semiconductor device and method for producing silicon carbide semiconductor device
EP3021353A4 (en) Silicon-carbide semiconductor device and method for manufacturing silicon-carbide semiconductor device
EP3010037A4 (en) Silicon carbide semiconductor device manufacturing method
SG11201803021YA (en) Monocrystalline semiconductor wafer and method for producing a semiconductor wafer
SG11201506429SA (en) Epitaxial silicon wafer and method for manufacturing same
EP2955743A4 (en) Method for manufacturing silicon carbide semiconductor substrate and method for manufacturing silicon carbide semiconductor device
EP2889899A4 (en) Method for manufacturing silicon carbide semiconductor device
SG11201601359VA (en) Method for producing mirror-polished wafer
EP2966674A4 (en) Method for manufacturing silicon-carbide semiconductor device
EP2919273A4 (en) Method for manufacturing semiconductor device