CN111593413A - Additive for monocrystalline silicon wafer chain type machine texturing and application thereof - Google Patents

Additive for monocrystalline silicon wafer chain type machine texturing and application thereof Download PDF

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Publication number
CN111593413A
CN111593413A CN202010609707.8A CN202010609707A CN111593413A CN 111593413 A CN111593413 A CN 111593413A CN 202010609707 A CN202010609707 A CN 202010609707A CN 111593413 A CN111593413 A CN 111593413A
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texturing
additive
chain type
silicon wafer
monocrystalline silicon
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CN202010609707.8A
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Inventor
张丽娟
周树伟
陈培良
贺婷婷
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Changzhou Shichuang Energy Co Ltd
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Changzhou Shichuang Energy Co Ltd
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Priority to CN202010609707.8A priority Critical patent/CN111593413A/en
Publication of CN111593413A publication Critical patent/CN111593413A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)

Abstract

The invention discloses an additive for monocrystalline silicon wafer chain type machine texturing, which comprises the following components in percentage by mass: 0.1 to 0.8 percent of polyethylene glycol, 2 to 6 percent of butyl ether, 0.05 to 0.2 percent of sodium salicylate, 1.5 to 3.5 percent of sodium pyruvate and the balance of water. The additive can be applied to the texture surface making of a single crystal silicon wafer chain type machine, the texture surface making time is shortened by more than 50 percent compared with the conventional process, the shortest texture surface making time can reach 240s, the reaction time is short, the unit consumption of each silicon wafer calculated by the texture surface making additive is small, the size of the pyramid texture surface is uniform, and the production cost of an enterprise is reduced; the additive adopts environment-friendly raw materials, is non-toxic and non-corrosive, and has no harm to human bodies and the environment.

Description

Additive for monocrystalline silicon wafer chain type machine texturing and application thereof
Technical Field
The invention relates to the field of photovoltaics, in particular to an additive for monocrystalline silicon wafer chain type machine texturing and application thereof.
Background
The texturing is an important link in the production process flow of the solar cell, a pyramid-like tetrahedral structure is formed on the surface of the monocrystalline silicon through the texturing process, and the textured structure can enable incident light to be reflected and refracted on the surface of the silicon wafer for multiple times, so that the reflectivity of the surface of the silicon wafer is reduced, and the photoelectric conversion efficiency is improved.
The mainstream monocrystal texture etching process mainly adopts groove type texture etching, and the texture etching additive also mainly adopts a groove type additive. Compared with a groove type machine table, the chained texturing machine table has the advantages of high continuous production and stronger batch stability. The additive of this patent of making herbs into wool can make the making herbs into wool piece of low reflectivity on the basis of shorter making herbs into wool time, and high photoelectric conversion efficiency means high-quality battery piece product, and production efficiency improves and can reduction in production cost, and this will realize dual gain.
Disclosure of Invention
The invention aims to provide an additive for monocrystalline silicon piece chain type machine texturing and application thereof, the additive can be applied to monocrystalline silicon piece chain type machine texturing, the texturing time is shortened by more than 50% compared with the conventional process, the shortest texturing time can reach 240s, the reaction time is short, the unit consumption calculated by the texturing additive to each silicon piece is small, the pyramid texturing size is uniform, and the production cost of an enterprise is reduced; the additive adopts environment-friendly raw materials, is non-toxic and non-corrosive, and has no harm to human bodies and the environment.
In order to achieve the purpose, the invention provides an additive for texture surface making of a monocrystalline silicon wafer chain type machine, which comprises the following components in percentage by mass: 0.1 to 0.8 percent of polyethylene glycol, 2 to 6 percent of butyl ether, 0.05 to 0.2 percent of sodium salicylate, 1.5 to 3.5 percent of sodium pyruvate and the balance of water.
Preferably, the polyethylene glycol is selected from one or more of polyethylene glycol 200, polyethylene glycol 400, polyethylene glycol 600 and polyethylene glycol 800.
Preferably, the butyl ethers are selected from one or two of ethylene glycol butyl ether and diethylene glycol butyl ether.
Preferably, the water is deionized water.
The invention also provides a texturing solution for texturing the monocrystalline silicon wafer chain type machine table, which contains the alkali solution and the additive, wherein the mass ratio of the additive to the alkali solution is 0.5-1.5: 100, and the alkali solution is an inorganic alkali aqueous solution.
Preferably, the alkali solution is 1.0-3.0 wt% of sodium hydroxide or potassium hydroxide aqueous solution.
The invention also provides a monocrystalline silicon piece chain type machine texturing method, which utilizes the texturing liquid to carry out chain type texturing on the monocrystalline silicon piece.
Preferably, the method for texture surface making of the monocrystalline silicon wafer by using the chain type machine comprises the following specific steps:
1) preparing an additive: adding 0.1-0.8% of polyethylene glycol, 2-6% of butyl ether, 0.05-0.2% of sodium salicylate and 1.5-3.5% of sodium pyruvate into the balance of water, and uniformly mixing to prepare an additive;
2) preparing a texturing solution: adding the additive prepared in the step 1) into an alkali solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the additive to the alkali solution is 0.5-1.5: 100; the alkali solution is an inorganic alkali aqueous solution;
3) chain type texturing: heating the texturing solution prepared in the step 2) to 85-95 ℃, flatly paving the monocrystalline silicon piece on a roller to pass through the texturing solution at a constant speed below the output end of the texturing solution, dripping the texturing solution on the silicon piece from top to bottom at a constant speed, and controlling the passing time of the silicon piece by controlling the speed of the roller to complete texturing; the reflectivity of the obtained flocking sheet is 12.0-13.0%.
The invention has the advantages and beneficial effects that: the additive can be applied to the texture surface making of the monocrystalline silicon chip chain type machine, the texture surface making time is shortened by more than 50% compared with the conventional process, the shortest texture surface making time can reach 240s, the reaction time is short, the unit consumption of each silicon chip calculated by the texture surface making additive is small, the size of the pyramid texture surface is uniform, and the production cost of an enterprise is reduced; the additive adopts environment-friendly raw materials, is non-toxic and non-corrosive, and has no harm to human bodies and the environment.
The polyethylene glycol chain segment contains a large number of ether bonds, is very easy to adsorb with a silicon wafer interface, can be used as a nucleating agent when the surface of the silicon wafer reacts with alkali, silicon reacts with inorganic alkali to generate a large number of hydrogen bubbles, butyl ether is added into a system to reduce the surface tension of the system and facilitate the removal of the hydrogen bubbles, and sodium salicylate and sodium pyruvate are used as nucleation modifiers in the system to assist the polyethylene glycol to react to form a textured surface.
The appearance of the wool making piece after short-time wool making by the chain type machine can reach a hydrophobic state after acid washing, compared with the existing single crystal groove type quick wool making additive, the appearance of the wool making piece can be hydrophobic only after post-cleaning and acid washing processes, the process is simplified, chemicals are saved, and the cost of an enterprise is reduced.
If the surface of the flocking sheet is still hydrophilic after acid washing, namely the surface of the flocking sheet contains a thin water film, then at a diffusion stage of a subsequent process, substances remained after the surface water film is dried can generate adverse effects on the diffusion process, and the final performance of the whole flocking sheet is further influenced.
In the existing single crystal groove type rapid texturing additive, system components contain a large amount of water-soluble high molecular substances, the surface of a silicon wafer is combined by Si-O bonds after texturing is finished, meanwhile, residual additive components are remained on the surface of the silicon wafer, a very thin layer of silicon dioxide is formed by oxidizing the surface of the silicon wafer under the action of hydrogen peroxide through a post-cleaning process, for example, the layer of silicon dioxide is removed through an HF process, the residual additive components are stripped along with the oxide layer, the surface of the silicon wafer is provided with Si-H bonds, and the surface of the silicon wafer is in a completely hydrophobic state.
In the additive, the polyethylene glycol 200, 400, 600 or 800 has lower molecular weight, is generally defined as oligomer in the range, and can not reach the category of high molecular substances, and other butyl ethers, sodium salicylate and sodium pyruvate are all small molecular substances, so that no high molecular substances are left after the flocking of the invention.
After the additive is used for texturing, no macromolecular substance additive is left, and the silicon wafer surface is completely bonded by Si-H bonds through an HF process, so that a hydrophobic state can be achieved.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The invention provides a monocrystalline silicon wafer chain type machine texturing method, which comprises the following steps:
1) preparing an additive: adding 0.1-0.8% of polyethylene glycol, 2-6% of butyl ether, 0.05-0.2% of sodium salicylate and 1.5-3.5% of sodium pyruvate into the balance of water, and uniformly mixing to prepare an additive;
the polyethylene glycol is selected from one or more of polyethylene glycol 200, polyethylene glycol 400, polyethylene glycol 600 and polyethylene glycol 800;
the butyl ethers are selected from one or two of ethylene glycol butyl ether and diethylene glycol butyl ether;
the water is preferably deionized water;
2) preparing a texturing solution: adding the additive prepared in the step 1) into an alkali solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the additive to the alkali solution is 0.5-1.5: 100; the alkali solution is 1.0-3.0 wt% of sodium hydroxide or potassium hydroxide aqueous solution;
3) chain type texturing: heating the texturing solution prepared in the step 2) to 85-95 ℃, flatly paving the monocrystalline silicon piece on a roller to pass through the texturing solution at a constant speed below the output end of the texturing solution, dripping the texturing solution on the silicon piece from top to bottom at a constant speed, and controlling the passing time of the silicon piece by controlling the speed of the roller to complete texturing; the reflectivity of the obtained flocking sheet is 12.0-13.0%.
The specific embodiment of the invention is as follows:
example 1
A monocrystalline silicon piece chain type machine texturing method comprises the following steps:
1) preparing an additive: adding 0.3 mass percent of polyethylene glycol 200, 3 mass percent of diethylene glycol monobutyl ether, 0.05 mass percent of sodium salicylate and 2.0 mass percent of sodium pyruvate into the balance of water, and uniformly mixing to prepare an additive;
2) preparing a texturing solution: adding the additive prepared in the step 1) into an alkali solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the additive to the alkali solution is 1.5: 100; the alkali solution is 1.8wt% sodium hydroxide solution;
3) chain type texturing: heating the texturing liquid prepared in the step 2) to 88 ℃, flatly paving the monocrystalline silicon piece on a roller to pass through the lower part of the output end of the texturing liquid at a constant speed, dripping the texturing liquid on the silicon piece from top to bottom at a constant speed, and controlling the speed of the silicon piece to pass through a chain type machine for 240s to finish texturing.
The reflection rate of the pile sheet obtained in example 1 was 12.2%.
Example 2
A monocrystalline silicon piece chain type machine texturing method comprises the following steps:
1) preparing an additive: adding 0.5 mass percent of polyethylene glycol 400, 2.1 mass percent of ethylene glycol monobutyl ether, 0.15 mass percent of sodium salicylate and 2.5 mass percent of sodium pyruvate into the balance of deionized water, and uniformly mixing to prepare an additive;
2) preparing a texturing solution: adding the additive prepared in the step 1) into an alkali solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the additive to the alkali solution is 2: 100; the alkali solution is 2.0wt% sodium hydroxide solution;
3) chain type texturing: heating the texturing liquid prepared in the step 2) to 90 ℃, flatly paving the monocrystalline silicon piece on a roller to pass through the lower part of the output end of the texturing liquid at a constant speed, dripping the texturing liquid on the silicon piece from top to bottom at a constant speed, and controlling the speed of the silicon piece to pass through a chain type machine for 240s to finish texturing.
The reflection rate of the flocked sheet obtained in example 2 was 12.5%.
Example 3
A monocrystalline silicon piece chain type machine texturing method comprises the following steps:
1) preparing an additive: adding 0.8 mass percent of polyethylene glycol 800, 3 mass percent of diethylene glycol monobutyl ether, 0.1 mass percent of sodium salicylate and 1 mass percent of sodium pyruvate into the balance of water, and uniformly mixing to prepare an additive;
2) preparing a texturing solution: adding the additive prepared in the step 1) into an alkali solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the additive to the alkali solution is 2: 100; the alkali solution is 2.5wt% potassium hydroxide solution;
3) chain type texturing: heating the texturing liquid prepared in the step 2) to 92 ℃, flatly paving the monocrystalline silicon piece on a roller to pass through the lower part of the output end of the texturing liquid at a constant speed, dripping the texturing liquid on the silicon piece from top to bottom at a constant speed, and controlling the speed of the silicon piece to pass through a chain type machine for 240s to finish texturing.
The reflection rate of the flocked sheet obtained in example 3 was 12.8%.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (8)

1. The additive for the monocrystalline silicon piece chain type machine texturing is characterized by comprising the following components in percentage by mass: 0.1 to 0.8 percent of polyethylene glycol, 2 to 6 percent of butyl ether, 0.05 to 0.2 percent of sodium salicylate, 1.5 to 3.5 percent of sodium pyruvate and the balance of water.
2. The additive for the chain type machine texturing of the monocrystalline silicon wafer according to claim 1, wherein the polyethylene glycol is one or more selected from polyethylene glycol 200, polyethylene glycol 400, polyethylene glycol 600 and polyethylene glycol 800.
3. The additive for single crystal silicon wafer chain machine texturing according to claim 1, wherein the butyl ether is one or two selected from butyl cellosolve and butyl cellosolve.
4. The additive for texture surface making of the monocrystalline silicon wafer chain type machine station as claimed in claim 1, wherein the water is deionized water.
5. The texturing solution for single crystal silicon wafer chain type machine texturing is characterized by comprising an alkali solution and the additive as defined in any one of claims 1 to 4, wherein the mass ratio of the additive to the alkali solution is 0.5-1.5: 100, and the alkali solution is an inorganic alkali aqueous solution.
6. The texture etching solution for the chain type machine texture etching of the monocrystalline silicon piece according to claim 5, wherein the alkali solution is 1.0-3.0 wt% of sodium hydroxide or potassium hydroxide aqueous solution.
7. The method for texturing the monocrystalline silicon wafer by using the chain type machine is characterized in that the texturing liquid of claim 5 or 6 is used for texturing the monocrystalline silicon wafer in a chain manner.
8. The chain type machine texturing method for the monocrystalline silicon wafer according to claim 7, comprising the following steps:
1) preparing an additive: adding 0.1-0.8% of polyethylene glycol, 2-6% of butyl ether, 0.05-0.2% of sodium salicylate and 1.5-3.5% of sodium pyruvate into the balance of water, and uniformly mixing to prepare an additive;
2) preparing a texturing solution: adding the additive prepared in the step 1) into an alkali solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the additive to the alkali solution is 0.5-1.5: 100; the alkali solution is an inorganic alkali aqueous solution;
3) chain type texturing: heating the texturing liquid prepared in the step 2) to 85-95 ℃, flatly paving the monocrystalline silicon piece on a roller to pass through the lower part of the output end of the texturing liquid at a constant speed, dripping the texturing liquid on the silicon piece from top to bottom at a constant speed, and controlling the passing time of the silicon piece by controlling the speed of the roller to finish texturing.
CN202010609707.8A 2020-06-30 2020-06-30 Additive for monocrystalline silicon wafer chain type machine texturing and application thereof Pending CN111593413A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113584597A (en) * 2021-08-06 2021-11-02 常州时创能源股份有限公司 Monocrystalline silicon texturing additive with strong dirt-removing power and application thereof

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CN103451739A (en) * 2013-09-04 2013-12-18 常州时创能源科技有限公司 Monocrystalline silicon wafer texturizing additive and using method thereof
CN105133027A (en) * 2015-08-21 2015-12-09 合肥中南光电有限公司 Small-textured-face monocrystalline silicon slice texturing solution and preparation method thereof
CN106119977A (en) * 2016-08-29 2016-11-16 常州时创能源科技有限公司 Fine-hair maring using monocrystalline silicon slice additive and application
CN106222756A (en) * 2016-09-30 2016-12-14 杭州飞鹿新能源科技有限公司 Additive and application process thereof for diamond wire cutting fine-hair maring using monocrystalline silicon slice
CN107955974A (en) * 2018-01-09 2018-04-24 常州时创能源科技有限公司 The flocking additive of inverted pyramid textured mono-crystalline silicon piece and its application
CN108193280A (en) * 2017-12-11 2018-06-22 杭州飞鹿新能源科技有限公司 The additive of diamond wire polycrystalline silicon wafer acidity texture preparation liquid and its application
CN110846721A (en) * 2019-10-12 2020-02-28 湖南理工学院 Monocrystalline silicon texturing additive formula containing polyalcohol and PEG

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Publication number Priority date Publication date Assignee Title
CN101962811A (en) * 2010-11-01 2011-02-02 浙江晶科能源有限公司 Monocrystalline silicon piece texturizing liquid and texturizing method thereof
CN103451739A (en) * 2013-09-04 2013-12-18 常州时创能源科技有限公司 Monocrystalline silicon wafer texturizing additive and using method thereof
CN105133027A (en) * 2015-08-21 2015-12-09 合肥中南光电有限公司 Small-textured-face monocrystalline silicon slice texturing solution and preparation method thereof
CN106119977A (en) * 2016-08-29 2016-11-16 常州时创能源科技有限公司 Fine-hair maring using monocrystalline silicon slice additive and application
CN106222756A (en) * 2016-09-30 2016-12-14 杭州飞鹿新能源科技有限公司 Additive and application process thereof for diamond wire cutting fine-hair maring using monocrystalline silicon slice
CN108193280A (en) * 2017-12-11 2018-06-22 杭州飞鹿新能源科技有限公司 The additive of diamond wire polycrystalline silicon wafer acidity texture preparation liquid and its application
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113584597A (en) * 2021-08-06 2021-11-02 常州时创能源股份有限公司 Monocrystalline silicon texturing additive with strong dirt-removing power and application thereof

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