CN113584597A - Monocrystalline silicon texturing additive with strong dirt-removing power and application thereof - Google Patents
Monocrystalline silicon texturing additive with strong dirt-removing power and application thereof Download PDFInfo
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- CN113584597A CN113584597A CN202110900934.0A CN202110900934A CN113584597A CN 113584597 A CN113584597 A CN 113584597A CN 202110900934 A CN202110900934 A CN 202110900934A CN 113584597 A CN113584597 A CN 113584597A
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- Prior art keywords
- texturing
- additive
- monocrystalline silicon
- surfactant
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- 239000000654 additive Substances 0.000 title claims abstract description 63
- 230000000996 additive effect Effects 0.000 title claims abstract description 63
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 33
- 239000004094 surface-active agent Substances 0.000 claims abstract description 44
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000008367 deionised water Substances 0.000 claims abstract description 22
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 22
- 239000002518 antifoaming agent Substances 0.000 claims abstract description 12
- 239000002738 chelating agent Substances 0.000 claims abstract description 12
- 239000006184 cosolvent Substances 0.000 claims abstract description 12
- 239000002667 nucleating agent Substances 0.000 claims abstract description 12
- 239000000243 solution Substances 0.000 claims description 34
- 239000000178 monomer Substances 0.000 claims description 29
- 239000003513 alkali Substances 0.000 claims description 20
- 238000002156 mixing Methods 0.000 claims description 20
- -1 octyl dimethyl allyl ammonium chloride Chemical compound 0.000 claims description 14
- 239000012670 alkaline solution Substances 0.000 claims description 13
- 230000002209 hydrophobic effect Effects 0.000 claims description 13
- 239000007864 aqueous solution Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 claims description 12
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 9
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 9
- 239000003638 chemical reducing agent Substances 0.000 claims description 8
- 239000007800 oxidant agent Substances 0.000 claims description 8
- 229920002401 polyacrylamide Polymers 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 6
- AOMUHOFOVNGZAN-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)dodecanamide Chemical compound CCCCCCCCCCCC(=O)N(CCO)CCO AOMUHOFOVNGZAN-UHFFFAOYSA-N 0.000 claims description 6
- 238000007334 copolymerization reaction Methods 0.000 claims description 6
- 229940031957 lauric acid diethanolamide Drugs 0.000 claims description 6
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 6
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 6
- USHAGKDGDHPEEY-UHFFFAOYSA-L potassium persulfate Chemical compound [K+].[K+].[O-]S(=O)(=O)OOS([O-])(=O)=O USHAGKDGDHPEEY-UHFFFAOYSA-L 0.000 claims description 6
- 235000010265 sodium sulphite Nutrition 0.000 claims description 6
- KVCGISUBCHHTDD-UHFFFAOYSA-M sodium;4-methylbenzenesulfonate Chemical compound [Na+].CC1=CC=C(S([O-])(=O)=O)C=C1 KVCGISUBCHHTDD-UHFFFAOYSA-M 0.000 claims description 6
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 5
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 4
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 claims description 4
- ACWKAVFAONSRKJ-UHFFFAOYSA-M hexadecyl-dimethyl-prop-2-enylazanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)CC=C ACWKAVFAONSRKJ-UHFFFAOYSA-M 0.000 claims description 4
- 239000003999 initiator Substances 0.000 claims description 4
- LPMBTLLQQJBUOO-KTKRTIGZSA-N (z)-n,n-bis(2-hydroxyethyl)octadec-9-enamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)N(CCO)CCO LPMBTLLQQJBUOO-KTKRTIGZSA-N 0.000 claims description 3
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 3
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims description 2
- DZSVIVLGBJKQAP-UHFFFAOYSA-N 1-(2-methyl-5-propan-2-ylcyclohex-2-en-1-yl)propan-1-one Chemical compound CCC(=O)C1CC(C(C)C)CC=C1C DZSVIVLGBJKQAP-UHFFFAOYSA-N 0.000 claims description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 2
- ZUAURMBNZUCEAF-UHFFFAOYSA-N 2-(2-phenoxyethoxy)ethanol Chemical compound OCCOCCOC1=CC=CC=C1 ZUAURMBNZUCEAF-UHFFFAOYSA-N 0.000 claims description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 claims description 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims description 2
- 239000004342 Benzoyl peroxide Substances 0.000 claims description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N Methyl ethyl ketone Natural products CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 2
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 claims description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 2
- DWAQJAXMDSEUJJ-UHFFFAOYSA-M Sodium bisulfite Chemical compound [Na+].OS([O-])=O DWAQJAXMDSEUJJ-UHFFFAOYSA-M 0.000 claims description 2
- VBIIFPGSPJYLRR-UHFFFAOYSA-M Stearyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[N+](C)(C)C VBIIFPGSPJYLRR-UHFFFAOYSA-M 0.000 claims description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 claims description 2
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 claims description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 claims description 2
- 238000005202 decontamination Methods 0.000 claims description 2
- 230000003588 decontaminative effect Effects 0.000 claims description 2
- IMBKASBLAKCLEM-UHFFFAOYSA-L ferrous ammonium sulfate (anhydrous) Chemical compound [NH4+].[NH4+].[Fe+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O IMBKASBLAKCLEM-UHFFFAOYSA-L 0.000 claims description 2
- 229960002089 ferrous chloride Drugs 0.000 claims description 2
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims description 2
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 229960003330 pentetic acid Drugs 0.000 claims description 2
- 229940077386 sodium benzenesulfonate Drugs 0.000 claims description 2
- 229940001607 sodium bisulfite Drugs 0.000 claims description 2
- HRZFUMHJMZEROT-UHFFFAOYSA-L sodium disulfite Chemical compound [Na+].[Na+].[O-]S(=O)S([O-])(=O)=O HRZFUMHJMZEROT-UHFFFAOYSA-L 0.000 claims description 2
- 235000010267 sodium hydrogen sulphite Nutrition 0.000 claims description 2
- 229940001584 sodium metabisulfite Drugs 0.000 claims description 2
- 235000010262 sodium metabisulphite Nutrition 0.000 claims description 2
- 159000000000 sodium salts Chemical class 0.000 claims description 2
- 229940001482 sodium sulfite Drugs 0.000 claims description 2
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 claims description 2
- 229940001474 sodium thiosulfate Drugs 0.000 claims description 2
- 235000019345 sodium thiosulphate Nutrition 0.000 claims description 2
- 229940048842 sodium xylenesulfonate Drugs 0.000 claims description 2
- QUCDWLYKDRVKMI-UHFFFAOYSA-M sodium;3,4-dimethylbenzenesulfonate Chemical compound [Na+].CC1=CC=C(S([O-])(=O)=O)C=C1C QUCDWLYKDRVKMI-UHFFFAOYSA-M 0.000 claims description 2
- MZSDGDXXBZSFTG-UHFFFAOYSA-M sodium;benzenesulfonate Chemical compound [Na+].[O-]S(=O)(=O)C1=CC=CC=C1 MZSDGDXXBZSFTG-UHFFFAOYSA-M 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- 230000002194 synthesizing effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 239000000693 micelle Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 230000003749 cleanliness Effects 0.000 abstract description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 24
- 239000000843 powder Substances 0.000 description 9
- 238000005303 weighing Methods 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229930182470 glycoside Natural products 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 125000004442 acylamino group Chemical group 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- AVWKSSYTZYDQFG-UHFFFAOYSA-M dimethyl-octadecyl-prop-2-enylazanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCCCC[N+](C)(C)CC=C AVWKSSYTZYDQFG-UHFFFAOYSA-M 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a monocrystalline silicon texturing additive with strong dirt-removing power and application thereof, wherein the texturing additive comprises the following components in percentage by mass: 1-6% of first surfactant, 2-5% of second surfactant, 3-5% of ether defoaming agent, 0.5-3% of nucleating agent, 1-2% of cosolvent, 0-0.1% of chelating agent and the balance of deionized water. The invention develops a novel monocrystalline silicon texturing additive with strong dirt-removing power, which is not a conventional surfactant which can have a wrapping effect only when reaching a certain concentration and is not limited by the critical micelle concentration, thereby greatly improving the dirt-removing effect of the texturing additive and improving the cleanliness of the surface of a silicon wafer after texturing.
Description
Technical Field
The invention relates to a monocrystalline silicon piece texturing additive, in particular to a monocrystalline silicon piece texturing additive with strong dirt-removing capacity and application thereof.
Background
At present, a diamond wire cutting process is mainly adopted in the cutting process of the monocrystalline silicon piece, silicon carbide micro powder is usually used as an abrasive material in mortar used for cutting, but micro powder with silicon carbide particles smaller than 2 microns does not have cutting capacity, in addition, a large amount of micro powder such as silicon powder and iron powder is generated in the cutting process and mixed into the mortar to form a layer of film, the content of the micro powder in the mortar is higher and higher along with the cutting, and when the amount of the micro powder is large enough, the micro powder is adhered to the surface of the silicon piece and is difficult to clean. With the continuous development of the cutting technology towards the thinning and the flaking, the risk of the single crystal silicon wafer being polluted by the micro powder is correspondingly increased, particularly the micro powder dirt embedded in the areas such as the line marks, the cracks and the like is difficult to remove in the cleaning process, and the micro powder dirt is released along with the corrosion of the surface of the silicon wafer in the silicon wafer texturing process, so that the dirt removing capability of the texturing additive is a very important index.
In the preparation process of the monocrystalline silicon solar cell, in order to improve the performance and efficiency of the solar cell, a texture surface needs to be manufactured on the surface of the monocrystalline silicon wafer to form a pyramid structure, so that the optical path of incident light is increased, the absorption of light is increased, the reflection of light is reduced, and the conversion efficiency of the solar cell is improved, wherein the texture surface is a texturing process. The texturing process comprises three steps of rough polishing, oxidation and texturing, however, the rough polishing and the oxidation are usually combined into one step in actual production, which puts higher requirements on the dirt-removing capability of the texturing additive.
The concentration of a surfactant contained in a formula of an existing texturing additive product is too low, for example, Chinese patent CN110528086A discloses that the concentration of sodium dodecyl benzene sulfonate in the texturing additive is only 0.01-2%, and the concentration of the sodium dodecyl benzene sulfonate in a final texturing solution can be only 0.003-0.06 g/L and is lower by one order of magnitude than the critical micelle concentration of 0.4g/L after the texturing additive and an alkaline solution are diluted according to the proportion of 0.25-5: 100 of a using method of the texturing additive; chinese patent CN110644057A discloses that the weight ratio of alkyl glycoside with different carbon chain lengths to water in the texturing additive is 0.5-1.5: 100, 10-20 mL of the texturing additive is added into each liter of deionized water during the preparation of the texturing solution, and the concentration of the alkyl glycoside with different carbon chain lengths in the final texturing solution is only about 0.05-0.3 g/L and is 0.3-0.7 g/L lower than the critical micelle concentration of the alkyl glycoside; chinese patent CN102888656A discloses that the mass concentration of sodium dodecyl sulfate in the texturing additive is 0.001% -1%, the ratio of the texturing additive to an alkali solution is 0.1-5: 100, and the concentration of the sodium dodecyl sulfate in the final texturing solution is only 0.5g/L at most and is 2.3g/L lower than the critical micelle concentration of the sodium dodecyl sulfate. The concentration of the surfactant in the wool making additive is lower than the critical micelle concentration, so that solubilized micelles cannot be formed on dirt, the dirt can be deposited again, and the dirt removing capability of the wool making additive is greatly limited. In the actual production process, if the decontamination capability of the texturing additive is improved by simply increasing the concentration of the surfactant, the surface of the silicon wafer is adsorbed with excessive surfactant, and the texturing reaction is slowed down, the alkali dosage is increased, and other adverse effects are caused.
Therefore, the invention aims to design a single crystal texturing additive product with strong dirt dispersing and removing capability.
Disclosure of Invention
The invention aims to provide a monocrystalline silicon texturing additive with strong dirt-removing power, which can improve the dirt-removing power and improve the cleanliness of the surface of a textured silicon wafer.
In order to achieve the purpose, the invention adopts the following technical scheme:
a monocrystalline silicon texturing additive with strong dirt-removing power comprises the following components in percentage by mass: 1-6% of first surfactant, 2-5% of second surfactant, 3-5% of ether defoaming agent, 0.5-3% of nucleating agent, 1-2% of cosolvent, 0-0.1% of chelating agent and the balance of deionized water.
Preferably, the first surfactant is synthesized by free radical copolymerization of 3-20% of hydrophobic monomer and 80-97% of hydrophilic monomer by mass percentage.
Preferably, the hydrophobic monomer is one or more of octyl dimethyl allyl ammonium chloride, decyl dimethyl allyl ammonium chloride, dodecyl dimethyl allyl ammonium chloride, hexadecyl dimethyl allyl ammonium chloride and octadecyl trimethyl ammonium chloride.
Preferably, the hydrophilic monomer is one or more of acrylic acid, methacrylic acid, itaconic acid, maleic acid, acrylamide, 2-acrylamide-2-methylpropanesulfonic acid and allyl polyoxyethylene ether 350-2000.
Preferably, the second surfactant is one or more of lauric acid diethanolamide, oleic acid diethanolamide and sodium dodecyl benzene sulfonate. Further preferably, the second surfactant is a mixture of lauric acid diethanolamide and sodium dodecyl benzene sulfonate in a mass ratio of 1: 3-1: 8.
Preferably, the ether defoaming agent is one or more of ethylene glycol butyl ether, diethylene glycol butyl ether, ethylene glycol phenyl ether and diethylene glycol phenyl ether.
Preferably, the nucleating agent is nonionic polyacrylamide with the molecular weight of not more than 100000.
Preferably, the cosolvent is one or more of sodium benzene sulfonate, sodium p-toluenesulfonate and sodium xylene sulfonate.
Preferably, the chelating agent is one or more of ethylenediamine tetraacetic acid, diethylenetriamine pentaacetic acid or sodium salt thereof.
The invention also provides a texturing method of the monocrystalline silicon texturing additive, which comprises the following steps:
(1) preparing a texturing additive: adding 1-6% of a first surfactant, 2-5% of a second surfactant, 3-5% of an ether defoaming agent, 0.5-3% of a nucleating agent, 1-2% of a cosolvent and 0-0.1% of a chelating agent into the balance of deionized water, mixing and stirring uniformly to prepare a texturing additive;
(2) preparing an alkali solution: mixing inorganic alkali and deionized water to prepare an alkali solution with the mass percent concentration of 1-3%;
(3) preparing a texturing solution: adding the texturing additive obtained in the step (1) into the alkaline solution obtained in the step (2), and uniformly mixing to obtain a texturing solution, wherein the mass ratio of the texturing additive to the alkaline solution is 0.5: 100-1.5: 100;
(4) texturing: and (4) immersing the monocrystalline silicon wafer into the texturing liquid in the step (3) for surface texturing, wherein the texturing temperature is 75-85 ℃, and the texturing time is 300-480 s.
Preferably, in the step (1), the preparation method of the first surfactant comprises the following steps:
uniformly mixing 3-20% by mass of hydrophobic monomer and 80-97% by mass of hydrophilic monomer, and preparing an aqueous solution with the mass percentage concentration of 10-40% by mass with deionized water;
adjusting the pH value of the aqueous solution to 6-8;
adding an initiator with the mass of 1/1000-1/100 of monomers, and copolymerizing for 1-3 h at room temperature.
Preferably, the initiator consists of an oxidizing agent and a reducing agent;
the oxidant is one or more of potassium persulfate, ammonium persulfate, hydrogen peroxide, peroxyacetic acid, benzoyl peroxide and butanone peroxide;
the reducing agent is one or more of sodium sulfite, sodium bisulfite, sodium thiosulfate, sodium metabisulfite, ferrous chloride, ferrous ammonium sulfate and hydrazine hydrate.
According to the monocrystalline silicon texturing additive, the amphiphilic polymer surfactant is introduced to serve as the first surfactant, and the additive can effectively wrap and disperse dirty substances at an extremely low concentration. The monomer composition of the polymer surfactant comprises three parts of a long carbon chain hydrophobic monomer, an anionic monomer and a monomer with a polyether long chain, and a water-soluble high molecular product embedded with a certain length of hydrophobic chain segment is formed through micelle polymer reaction. The hydrophobic chain segment part can form strong adhesive force on the surface of a dirty substance, the hydrophilic chain segment part is dissolved in a water phase to ensure the hydrophilicity of a wrapped object, and the hydrophilic chain segment part simultaneously has a molecular structure of a polyether side chain with negative charges and larger steric hindrance, so that the aggregation and sedimentation of the wrapped object can be effectively prevented.
The monocrystalline silicon texturing additive disclosed by the invention has the capabilities of removing dirt and promoting texturing, fatty acid diethanolamide is introduced as a second surfactant, and the molecular structure of the additive contains strong-polarity structural bis-hydroxyethyl amine, so that hydrogen bond combination can be formed with Si-H bonds and Si-OH bonds on the surface of a silicon wafer to form nucleation points, and the texturing on the surface of the silicon wafer is promoted. The molecular chain of the non-ionic polyacrylamide used as the nucleating agent contains a large amount of strong polar acylamino, so that a good adsorption nucleating effect can be formed. The cosolvent is used for improving the cloud point of the second surfactant, so that the second surfactant is adsorbed on the surface of the silicon wafer more uniformly. The chelating agent is used for capturing metal ions and increasing the surface cleanliness of the silicon wafer. The ether defoaming agent is used for replacing the traditional isopropanol and has the advantages of high boiling point and low concentration.
Detailed Description
The technical solution of the present invention will be further described with reference to the following examples.
Example 1
The embodiment provides a texturing method of a monocrystalline silicon wafer, which comprises the following specific steps:
(1) preparing a first surfactant: weighing 4.5 parts by mass of decyl dimethyl allyl ammonium chloride as a hydrophobic monomer, 3 parts by mass of allyl polyoxyethylene ether 800 and 22.5 parts by mass of methacrylic acid as hydrophilic monomers, and mixing with the balance of deionized water to prepare an aqueous solution with the mass percentage concentration of 30%; then adding sodium hydroxide to adjust the pH value of the aqueous solution to 6-8; and then respectively adding five parts by mass of potassium persulfate serving as an oxidizing agent and five parts by mass of sodium sulfite serving as a reducing agent into the mixture, uniformly stirring the materials, and carrying out copolymerization reaction for synthesis for 3 hours to obtain the first surfactant.
Preparing a texturing additive: weighing 15 parts (containing 4.5 parts of effective components) of the reaction product as a first surfactant, 0.5 part of lauric acid diethanolamide and 3 parts of sodium dodecyl benzene sulfonate as a second surfactant, 5 parts of ethylene glycol phenyl ether as an ether defoaming agent, 2 parts of polyacrylamide with the molecular weight of 80000 as a nucleating agent, 1 part of sodium p-toluenesulfonate as a cosolvent, 0.1 part of disodium ethylenediamine tetraacetic acid as a chelating agent, and adding the balance of deionized water, mixing and stirring uniformly to prepare the texturing additive.
(2) Preparing an alkali solution: adding deionized water and inorganic alkali sodium hydroxide into a texturing groove to prepare an alkali solution with the mass percentage concentration of 1%;
(3) preparing a texturing solution: adding the texturing additive obtained in the step (1) into the alkaline solution obtained in the step (2), and uniformly mixing to prepare a texturing solution, wherein the mass ratio of the texturing additive to the alkaline solution is 1: 100;
(4) texturing: and (4) immersing the monocrystalline silicon wafer into the texturing solution in the step (3) for surface texturing, wherein the texturing temperature is 80 ℃, and the texturing time is 420 s.
Example 2
The embodiment provides a texturing method of a monocrystalline silicon wafer, which comprises the following specific steps:
(1) preparing a first surfactant: weighing 3 parts of dodecyl dimethyl allyl ammonium chloride as a hydrophobic monomer, 3 parts of allyl polyoxyethylene ether 1000 and 24 parts of acrylic acid as a hydrophilic monomer, and mixing with the balance of deionized water to prepare an aqueous solution with the mass percentage concentration of 25%; then adding sodium hydroxide to adjust the pH value of the aqueous solution to 6-8; 5/10000 parts of potassium persulfate serving as an oxidizing agent and 5/10000 parts of sodium sulfite serving as a reducing agent are added into the monomer respectively, and the mixture is stirred uniformly and subjected to copolymerization reaction for 3 hours to obtain the first surfactant.
Preparing a texturing additive: weighing 15 parts (containing 4.5 parts of effective components) of the reaction product as a first surfactant, 0.5 part of lauric acid diethanolamide and 4 parts of sodium dodecyl benzene sulfonate as a second surfactant, 5 parts of ethylene glycol phenyl ether as an ether defoaming agent, 2 parts of polyacrylamide with the molecular weight of 70000 as a nucleating agent, 1 part of sodium p-toluenesulfonate as a cosolvent, 0.1 part of disodium ethylenediamine tetraacetic acid as a chelating agent, and adding the balance of deionized water, mixing and stirring uniformly to prepare the texturing additive.
(2) Preparing an alkali solution: adding deionized water and inorganic alkali sodium hydroxide into a texturing groove to prepare an alkali solution with the mass percent concentration of 1.2%;
(3) preparing a texturing solution: adding the texturing additive obtained in the step (1) into the alkaline solution obtained in the step (2), and uniformly mixing to prepare a texturing solution, wherein the mass ratio of the texturing additive to the alkaline solution is 1: 100;
(4) texturing: and (4) immersing the monocrystalline silicon wafer into the texturing solution in the step (3) for surface texturing, wherein the texturing temperature is 80 ℃, and the texturing time is 420 s.
Example 3
(1) Preparing a first surfactant: weighing 3 parts of hexadecyl dimethyl allyl ammonium chloride serving as a hydrophobic monomer, 3 parts of allyl polyoxyethylene ether 1200 and 24 parts of acrylic acid serving as a hydrophilic monomer, and mixing with the balance of deionized water to prepare an aqueous solution with the mass percentage concentration of 20%; then adding sodium hydroxide to adjust the pH value of the aqueous solution to 6-8; 8/10000 parts of potassium persulfate serving as an oxidizing agent and 8/10000 parts of sodium sulfite serving as a reducing agent are added into the monomer respectively, and the mixture is stirred uniformly and subjected to copolymerization reaction for 3 hours to obtain the first surfactant.
Preparing a texturing additive: weighing 12 parts (containing 3.6 parts of effective components) of the reaction product as a first surfactant, 0.2 part of oleic acid diethanolamide and 2 parts of sodium dodecyl benzene sulfonate as a second surfactant, 6 parts of ethylene glycol monobutyl ether as an ether defoaming agent, 1.5 parts of polyacrylamide with the molecular weight of 70000 as a nucleating agent, 1.5 parts of sodium p-toluenesulfonate as a cosolvent, 0.1 part of disodium ethylenediamine tetraacetate as a chelating agent, and adding the balance of deionized water, mixing and stirring uniformly to prepare the texturing additive.
(2) Preparing an alkali solution: adding deionized water and inorganic alkali sodium hydroxide into a texturing groove to prepare an alkali solution with the mass percent concentration of 1.5%;
(3) preparing a texturing solution: adding the texturing additive obtained in the step (1) into the alkaline solution obtained in the step (2), and uniformly mixing to prepare a texturing solution, wherein the mass ratio of the texturing additive to the alkaline solution is 1: 100;
(4) texturing: and (4) immersing the monocrystalline silicon wafer into the texturing solution in the step (3) for surface texturing, wherein the texturing temperature is 75 ℃, and the texturing time is 480 s.
Example 4
(1) Preparing a first surfactant: weighing 1 part of hexadecyl dimethyl allyl ammonium chloride and 1 part of octadecyl dimethyl allyl ammonium chloride as hydrophobic monomers, 3 parts of allyl polyoxyethylene ether 1500 and 26 parts of acrylic acid as hydrophilic monomers, and mixing with the balance of deionized water to prepare an aqueous solution with the mass percentage concentration of 20%; then adding sodium hydroxide to adjust the pH value of the aqueous solution to 6-8; 2/1000 parts of potassium persulfate serving as an oxidizing agent and 2/1000 parts of sodium sulfite serving as a reducing agent are added into the monomer respectively, and the mixture is stirred uniformly and subjected to copolymerization reaction for 3 hours to obtain the first surfactant.
Preparing a texturing additive: weighing 8 parts (containing 2.4 parts of effective components) of the reaction product as a first surfactant, 0.5 part of lauric acid diethanolamide and 3 parts of sodium dodecyl benzene sulfonate as a second surfactant, 6 parts of ethylene glycol monobutyl ether as an ether defoaming agent, 0.5 part of polyacrylamide with the molecular weight of 70000 as a nucleating agent, 2 parts of sodium p-toluenesulfonate as a cosolvent, 0.1 part of disodium ethylenediamine tetraacetate as a chelating agent, and adding the balance of deionized water, mixing and stirring uniformly to prepare the texturing additive.
(2) Preparing an alkali solution: adding deionized water and inorganic alkali sodium hydroxide into a texturing groove to prepare an alkali solution with the mass percentage concentration of 2%;
(3) preparing a texturing solution: adding the texturing additive obtained in the step (1) into the alkaline solution obtained in the step (2), and uniformly mixing to prepare a texturing solution, wherein the mass ratio of the texturing additive to the alkaline solution is 1: 100;
(4) texturing: and (4) immersing the monocrystalline silicon wafer into the texturing solution in the step (3) for surface texturing, wherein the texturing temperature is 85 ℃, and the texturing time is 300 s.
Claims (12)
1. A monocrystalline silicon texturing additive with strong decontamination capability is characterized by comprising the following components in percentage by mass: 1-6% of first surfactant, 2-5% of second surfactant, 3-5% of ether defoaming agent, 0.5-3% of nucleating agent, 1-2% of cosolvent, 0-0.1% of chelating agent and the balance of deionized water.
2. The monocrystalline silicon texturing additive of claim 1, wherein the first surfactant is synthesized by radical copolymerization of 3-20% by mass of hydrophobic monomers and 80-97% by mass of hydrophilic monomers.
3. The additive for texturing monocrystalline silicon according to claim 2, wherein the hydrophobic monomer is one or more of octyl dimethyl allyl ammonium chloride, decyl dimethyl allyl ammonium chloride, dodecyl dimethyl allyl ammonium chloride, hexadecyl dimethyl allyl ammonium chloride and octadecyl trimethyl ammonium chloride.
4. The additive for texturing monocrystalline silicon according to claim 3, wherein the hydrophilic monomer is one or more of acrylic acid, methacrylic acid, itaconic acid, maleic acid, acrylamide, 2-acrylamide-2-methylpropanesulfonic acid, and allyl polyoxyethylene ether 350-2000.
5. The additive for texturing monocrystalline silicon, according to claim 1, wherein the second surfactant is one or more of lauric acid diethanolamide, oleic acid diethanolamide and sodium dodecyl benzene sulfonate.
6. The monocrystalline silicon texturing additive according to claim 1, wherein the ether-type defoaming agent is one or more of ethylene glycol butyl ether, diethylene glycol butyl ether, ethylene glycol phenyl ether and diethylene glycol phenyl ether.
7. The monocrystalline silicon texturing additive of claim 1 wherein the nucleating agent is a non-ionic polyacrylamide having a molecular weight of no more than 10 million.
8. The additive for texturing monocrystalline silicon according to claim 1, wherein the cosolvent is one or more of sodium benzene sulfonate, sodium p-toluene sulfonate and sodium xylene sulfonate.
9. The additive for texturing monocrystalline silicon according to claim 1, wherein the chelating agent is one or more of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid or sodium salt thereof.
10. A method of texturing a single crystal silicon texturing additive as claimed in any one of claims 1 to 9 comprising the steps of:
(1) preparing a texturing additive: adding 1-6% of a first surfactant, 2-5% of a second surfactant, 3-5% of an ether defoaming agent, 0.5-3% of a nucleating agent, 1-2% of a cosolvent and 0-0.1% of a chelating agent into the balance of deionized water, mixing and stirring uniformly to prepare a texturing additive;
(2) preparing an alkali solution: mixing inorganic alkali and deionized water to prepare an alkali solution with the mass percent concentration of 1-3%;
(3) preparing a texturing solution: adding the texturing additive obtained in the step (1) into the alkaline solution obtained in the step (2), and uniformly mixing to obtain a texturing solution, wherein the mass ratio of the texturing additive to the alkaline solution is 0.5: 100-1.5: 100;
(4) texturing: and (4) immersing the monocrystalline silicon wafer into the texturing liquid in the step (3) for surface texturing, wherein the texturing temperature is 75-85 ℃, and the texturing time is 300-480 s.
11. The method of claim 10, wherein in step (1), the method of synthesizing the first surfactant comprises the steps of:
uniformly mixing 3-20% by mass of hydrophobic monomer and 80-97% by mass of hydrophilic monomer, and preparing an aqueous solution with the mass percentage concentration of 10-40% by mass with deionized water;
adjusting the pH value of the aqueous solution to 6-8;
adding an initiator with the mass of 1/1000-1/100 of monomers, and copolymerizing for 1-3 h at room temperature.
12. The method of claim 11, wherein the initiator is comprised of an oxidizing agent and a reducing agent;
the oxidant is one or more of potassium persulfate, ammonium persulfate, hydrogen peroxide, peroxyacetic acid, benzoyl peroxide and butanone peroxide;
the reducing agent is one or more of sodium sulfite, sodium bisulfite, sodium thiosulfate, sodium metabisulfite, ferrous chloride, ferrous ammonium sulfate and hydrazine hydrate.
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