CN107021644B - A kind of preparation method of photovoltaic glass - Google Patents
A kind of preparation method of photovoltaic glass Download PDFInfo
- Publication number
- CN107021644B CN107021644B CN201710241134.6A CN201710241134A CN107021644B CN 107021644 B CN107021644 B CN 107021644B CN 201710241134 A CN201710241134 A CN 201710241134A CN 107021644 B CN107021644 B CN 107021644B
- Authority
- CN
- China
- Prior art keywords
- glass
- template
- preparation
- silicon dioxide
- photovoltaic glass
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- 239000011521 glass Substances 0.000 title claims abstract description 124
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 183
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 85
- 238000000034 method Methods 0.000 claims abstract description 53
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 50
- 238000009415 formwork Methods 0.000 claims abstract description 39
- 239000012815 thermoplastic material Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000012546 transfer Methods 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 45
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000003795 chemical substances by application Substances 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 17
- 239000011259 mixed solution Substances 0.000 claims description 15
- -1 polyethylene terephthalate Polymers 0.000 claims description 15
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 claims description 13
- 238000002156 mixing Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 239000004210 ether based solvent Substances 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 238000010023 transfer printing Methods 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 8
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 8
- 238000005266 casting Methods 0.000 claims description 7
- 230000002378 acidificating effect Effects 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 6
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Chemical group 0.000 claims description 6
- 239000002184 metal Chemical group 0.000 claims description 6
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 6
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 claims description 5
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 2
- 229910003978 SiClx Inorganic materials 0.000 claims description 2
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- WOZVHXUHUFLZGK-UHFFFAOYSA-N dimethyl terephthalate Chemical group COC(=O)C1=CC=C(C(=O)OC)C=C1 WOZVHXUHUFLZGK-UHFFFAOYSA-N 0.000 claims 1
- 239000000499 gel Substances 0.000 description 25
- 239000012528 membrane Substances 0.000 description 18
- 239000002086 nanomaterial Substances 0.000 description 15
- 235000019441 ethanol Nutrition 0.000 description 13
- QPJVMBTYPHYUOC-UHFFFAOYSA-N methyl benzoate Chemical compound COC(=O)C1=CC=CC=C1 QPJVMBTYPHYUOC-UHFFFAOYSA-N 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 230000003667 anti-reflective effect Effects 0.000 description 7
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000003292 glue Substances 0.000 description 7
- 239000005038 ethylene vinyl acetate Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229940095102 methyl benzoate Drugs 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 229920000768 polyamine Polymers 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 3
- AGGKEGLBGGJEBZ-UHFFFAOYSA-N tetramethylenedisulfotetramine Chemical compound C1N(S2(=O)=O)CN3S(=O)(=O)N1CN2C3 AGGKEGLBGGJEBZ-UHFFFAOYSA-N 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000001464 adherent effect Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 239000000017 hydrogel Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000005070 ripening Effects 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- OTEKOJQFKOIXMU-UHFFFAOYSA-N 1,4-bis(trichloromethyl)benzene Chemical compound ClC(Cl)(Cl)C1=CC=C(C(Cl)(Cl)Cl)C=C1 OTEKOJQFKOIXMU-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 239000003377 acid catalyst Substances 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000005815 base catalysis Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000005779 cell damage Effects 0.000 description 1
- 208000037887 cell injury Diseases 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZXPDYFSTVHQQOI-UHFFFAOYSA-N diethoxysilane Chemical compound CCO[SiH2]OCC ZXPDYFSTVHQQOI-UHFFFAOYSA-N 0.000 description 1
- 239000002552 dosage form Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229920001038 ethylene copolymer Polymers 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 108010025899 gelatin film Proteins 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Polymers C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002103 nanocoating Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001028 reflection method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000013083 solar photovoltaic technology Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229960001124 trientine Drugs 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
- C01B33/145—Preparation of hydroorganosols, organosols or dispersions in an organic medium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
This application discloses a kind of preparation methods of photovoltaic glass, comprising: by transfer method, obtains the Flexible formwork assembly of thermoplastic material composition, Flexible formwork assembly surface has pattern；Silicon dioxide gel and substrate of glass are obtained respectively, and form film in glass surface using silicon dioxide gel；The pattern of Flexible formwork assembly is transferred on the film of glass surface by method for stamping, forms photovoltaic glass.The application method can get the photovoltaic glass with antireflection structure of large area, low cost.
Description
Technical field
This application involves solar cell photovoltaic technical fields, more particularly, to a kind of preparation method of photovoltaic glass.
Background technique
It is well known that energy and environmental problem has become an important factor for restricting development of all countries economy.Solar energy is because of it
It is resourceful, widely distributed, it has also become one of the renewable and clean energy resource with development potentiality.Using solar-photovoltaic technology as generation
The new energy technology of table has many advantages, such as cleaning, safe and convenient, efficient, it has also become countries in the world common concern and give priority to
New industry.
In photovoltaic industry, the promotion of solar battery efficiency is always the emphasis that people are concerned about.The energy master of sunlight
Concentrate on the wave band less than 2 μm.Therefore, battery material is concentrated mainly on for improving the research of cell photoelectric transfer efficiency at present
Optimization and optical texture design two aspects.The main absorbed layer for optimizing semiconductor by material technology, regulates and controls material in terms of material
Expect interface, energy band, improves the photoelectric conversion efficiency and spectrum utilization factor of sunlight.Optical texture design is then to utilize optical technology
Incident light is regulated and controled, battery surface and interface reflection are reduced, improves battery to the capture ability and the efficiency of light energy utilization of light.Often
It include chemical corrosion method, magnetron sputtering method, sol-gal process etc. with the preparation method for reducing reflection.
In practical applications, there is good light transmittance, the resistance to height under a variety of different weather conditions in view of ultra-clear glasses
Temperature is ageing-resistant, meets standard required for solar cell module.Solar-electricity is encapsulated using the less ultra-clear glasses of iron-content
Pond can reduce cell damage caused by external environment, slow down the decaying of battery performance.But due to air and glass interface it
Between there are the difference of refractive index, lead to the capacity usage ratio that battery component is reduced there are part reflection loss.
In order to reduce the reflection loss at interface, one of method is based on optical coherence cancellation antireflective technology, typical are as follows:
The lower porous structure silica (SiO of one layer of refractive index is coated in glass surface2) antireflection film, such as patent No. CN
The Chinese patent literature of 105776886 A discloses a kind of preparation method of low-refraction silica antireflective film, using base catalysis
Method is prepared for low-refraction silicon oxide film, and simple process, cost is relatively low；103420619 A of patent No. CN discloses a kind of folding
The method for penetrating the controllable poriness silicon oxide antireflective film of rate is prepared for having three-dimensional knot using the method for acidic catalyst after first alkalinity
The composite Nano coating liquid of structure coats porous silica film in substrate surface by spray coating method, finally moves back by high temperature
Fire obtains pure inorganic porous silica coating.This anti-reflection technology is optimized generally directed to specific wavelength, and it is a certain enter
Angular range is penetrated with preferable anti-reflection effect.However, be based on optical coherence principle, the coating technique can not to wide range,
Wide-angle anti-reflection demand is realized and is further promoted.Another more common anti-reflection method is based on geometry and falls into light technology, typical
Are as follows: the substrate of glass of periodical micro-nano structure, such as publication number are obtained using ion beam etch process etching glass substrate
The Chinese patent literature of CN103943716 A discloses the preparation of a kind of micro-nano structure solar battery and its back side light trapping structure
Method receives the substrate of glass of no corner angle periodicity micro-nano structure using ion beam etch process etching glass substrate, or utilizes
Metal form nano impression organic resin prepares micro-nano anti-reflection structure in glass basic surface, utilizes surface micro-nano structure
Multiple reflections, incident realization anti-reflection effect, and spectrum and incident angle are further widened, but the direct usual ruler of making herbs into wool structure of glass
Degree is more difficult to control, and etching difficulty is larger.The Chinese patent literature of 105924935 A of publication number CN discloses a kind of using ultraviolet
It is thin that modified organic nano anti-reflection is prepared using ultraviolet nanometer imprint process in the method that nano impression prepares antireflection film
Film.However, organic matter weatherability is poor, anti-reflection is easy failure.
In consideration of it, it is necessary to improve to the anti-reflection structure preparation method for being currently used for solar battery.
Summary of the invention
The application technology to be solved is to propose a kind of anti-reflection structure preparation method for solar battery, the preparation
Method realizes that anti-reflection structure that is simple, being easy to control, and prepared using this method is realized in the main energy wave of solar spectrum simultaneously
The anti-reflection of section falls into light effect.
In order to solve the above technical problems, the application proposes that a kind of preparation method of photovoltaic glass, the preparation method include
Following steps:
By transfer method, the Flexible formwork assembly of thermoplastic material composition is obtained, the Flexible formwork assembly surface has pattern；
Silicon dioxide gel and substrate of glass are obtained respectively, and using the silicon dioxide gel in the glass surface shape
At film；
The pattern of the Flexible formwork assembly is transferred on the film of the glass surface by method for stamping, forms photovoltaic glass
Glass.
Further, the film thickness of the glass surface is 1-30 μm.
Further, the Flexible formwork assembly is secondary transfer printing template, and the secondary transfer printing template obtains as follows
:
Liquefied thermoplastic material is uniformly mixed with curing agent, obtains mixed solution A；
Has figuratum rigid template as original template using surface, the mixing described in the original template surface casting is molten
Liquid A；
To the original template row curing process of casting mixed solution A, hybrid template B is obtained；
The original template is removed from the hybrid template B, obtains cured thermoplastic material, the cured thermoplasticity
Material is secondary transfer printing template.
Further, the original template be silicon wafer, silicon nitride, silicon carbide, quartz glass or metal form at least
It is a kind of.
The pattern on the original template surface includes at least one of pyramid, dimpling shape, honeycombed, and affiliated figure
Case is distributed in periodicity or quasi periodic.
Further, the thermoplastic material is polymethyl methacrylate, polyethylene terephthalate, poly- diformazan
At least one of radical siloxane, epoxy resin, and the thermoplastic material and the curing agent are according to mass ratio 5:1-20:1
Mixing.
Further, the Flexible formwork assembly is by the way that at least transfer obtains three times.
Further, the silicon dioxide gel obtains by the following method:
Silicon source, water and organic solvent are mixed under the action of acidic catalyst respectively, reaction generates acid silicon dioxide
The hydrosol；
Alcohol ether solvents are mixed with the acid silicon dioxide hydrosol, obtain silicon dioxide gel.
Further, the silicon source includes tetraethoxysilane, methyltriethoxysilane, dimethyl diethoxy silicon
Alkane, diphenyl diethoxy silane, vinyltriethoxysilane, propyl trimethoxy silicane, γ-glycidyl ether propyl
Trimethoxy silane, gamma-methyl allyl acyloxypropyl trimethoxysilane, methyltriethoxy silane, in hexamethyl siloxane
At least one, and the silicon source, water and organic solvent are mixed according to molar ratio 1:5:5-4:10:15.
Further, the alcohol ether solvents be butyl acetate, 1,2-PD, in methyl benzoate extremely
Few one kind, and the alcohol ether solvents are mixed with the acid silicon dioxide hydrosol 0.5%-10% in mass ratio.
Compared with prior art, the silicon dioxide gel that alcohol ether solvents obtain is added in having the beneficial effect that for the application, to two
Silica sol plays certain bating effect, and is conducive to subsequent coining manipulation by the silicon dioxide gel that this method obtains；
The Flexible formwork assembly of thermoplastic material preparation is obtained using transfer method, the surface of Flexible formwork assembly has patterning, and utilizing should
Flexible formwork assembly prepares the photovoltaic glass with micro-nano structure, usually will not be with since thermoplastic material surface itself can be lower
Oxide sol phase adhesion can prepare the Flexible formwork assembly of size in proportion according to the size of primary template, easily controllable；In addition,
Thermoplastic material short texture itself is porous, convenient for the volatilization of organic solvent in colloidal sol, easy demoulding；Further, transfer obtains
Flexible formwork assembly can accurate replicating original template pattern, graphic structure shrinkage is smaller, there is good anti-aliasing,
Primary preparation, can repeatedly use.
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other features of the application,
Objects and advantages will become more apparent upon.
Fig. 1 is the crystal silicon solar energy battery structural schematic diagram of one embodiment of the application；
Fig. 2 is the photovoltaic glass preparation method flow chart for crystal silicon solar energy battery as shown in Figure 1；
Fig. 3 is the silica membrane surface topography map spectrogram that one embodiment of the application is formed in photovoltaic glass surface；
Fig. 4 is the photovoltaic glass transmission measurement result schematic diagram of the embodiment of the present application；
Fig. 5 is the photovoltaic glass reflectance test result schematic diagram of inventive embodiments；
Fig. 6 is the photovoltaic glass mist degree spectral results schematic diagram of the embodiment of the present application.
Specific embodiment
Illustrate presently filed embodiment below by way of particular specific embodiment, those skilled in the art can be by this explanation
Content disclosed by book will readily appreciate that the further advantage and effect of the application.The application can also pass through in addition different specific realities
The mode of applying is embodied or practiced, and every details can also be based on different viewpoints and application, without departing from this in this specification
Various modifications or alterations are carried out under the spirit of application.
Please refer to attached drawing, it should be noted that diagram provided in the present embodiment only illustrates the application in a schematic way
Basic conception.Therefore, crystal silicon solar energy battery structure related with the application is only shown in diagram rather than according to practical reality
Shape and size when applying are drawn, and crystal silicon solar energy battery is not limited only in actual implementation, also include the film-type sun
Energy battery, battery structure are likely more complexity.
Illustratively, illustrate by taking crystal silicon solar energy battery as an example.As shown in Fig. 1, in one embodiment of the application, crystal
Silicon solar battery assembly from top to bottom successively include photovoltaic glass (Window layer) 11, crystal-silicon battery slice 12, back reflection layer 13,
Middle 11 surface of photovoltaic glass includes the silica membrane 111 of pattern, and photovoltaic glass 11 and crystal-silicon battery slice 12 pass through ethylene-vinegar
Sour ethylene copolymer (ethylene-vinyl acetate copolymer, EVA) adhesive connection, crystal-silicon battery slice 12 and back
Reflecting layer 13 is equally connected by EVA adhesive, and pyramid structure is arranged in aperiodic array-like.Optionally, silica
The pattern of film surface can be pyramid, reverse pyramid, triangular pyramidal, the square bodily form, spherical shape, dimpling, honeycomb etc. its
He is regular or irregular pattern, the size range of pattern are about 1-20 μm, and pattern can be in periodicity or quasi periodic (non-week
Phase property) distribution.It is also can be used between the different components of above-mentioned crystal silicon solar energy battery including addition type silicone adhesive, condensation
The silicone rubber adhesive of the types such as type silicone rubber adhesive connects.
Antireflection structure anti-reflection effect to solve existing solar battery is limited, making herbs into wool structure size is more rambunctious asks
Topic, the application disclose a kind of method for preparing photovoltaic glass as shown in Figure 1, include the following steps: as shown in Figure 2
S201. by transfer method, the Flexible formwork assembly of thermoplastic material composition is obtained, the Flexible formwork assembly surface has figure
Case, the pattern may include pyramid, cone, dimpling, honeycomb etc. other without corner angle micro-nano structure, or the square bodily form, terrace with edge
Equal micro-nano structures.Optionally, which can also be in cyclic array distribution or quasi periodic distribution.
In some embodiments, by transfer method, the Flexible formwork assembly for obtaining thermoplastic material composition includes:
Liquefied thermoplastic material's (monomer) is uniformly mixed with curing agent according to mass ratio 5:1-20:1, mixed solution is obtained
A；It provides and has figuratum original template, in original template surface casting mixed solution A；To the introductory die of casting mixed solution A
Plate row curing process obtains hybrid template B；The original template is removed from hybrid template B, obtains cured thermoplastic material
(monomer-polymer).The above process is secondary transfer printing or transfer process, cured thermoplastic material are secondary transfer printing template again.
Certainly, in order to improve transfer template reliability, Flexible formwork assembly can by transferring three times, four times transfer, five times transfer etc. repeatedly
Transfer method obtains, i.e., to the number of transfer and is not specifically limited in the application.
In some embodiments, thermoplastic material can be polymethyl methacrylate (PMMA), polypropylene (PP), poly- second
Alkene (PE), polyvinyl chloride (PVC), polystyrene (PS), polyethylene terephthalate (PET), epoxy resin or poly- diformazan
Radical siloxane (PDMS) etc..In further embodiments, liquefied thermoplastic material's (monomer) and curing agent can be according to mass ratioes 5:
1-20:1 mixing.
Curing agent, which may be selected, in curing agent may be selected fat polyamine, ethylenediamine (EDA), diethylenetriamine (DETA), three second
SYLGARD184 also may be selected in alkene tetramine (TETA), tetraethylenepentamine (TEPA), polyethylene polyamine (PEPA), diethylamine (DEA)
One of silica gel curing agent or KH-570 silane coupling agent etc. or a variety of combinations.Certainly, at room temperature being in solid-state
Thermoplastic material, can be without being added curing agent in the solidification process of thermoplastic material, i.e. curing agent is involved in the application
It is non-necessary in technical solution.Silicon wafer, silicon nitride, silicon carbide, quartz glass with target pattern may be selected in original template
Or metal form etc..The micro-nano structure on original template surface can be periodically or quasi-periodically pyramid structure, honeycomb
Or micro-convex structure, the size range of micro-nano structure may be selected to be 1-20 μm.
S202. silicon dioxide gel and substrate of glass are obtained respectively, and are formed using silicon dioxide gel in glass surface
Film.
In some embodiments, silicon dioxide gel obtains by the following method: silicon source, water and organic solvent existing respectively
It is mixed under the action of acidic catalyst, reaction generates the acid silicon dioxide hydrosol；By alcohol ether solvents and the acid titanium dioxide
The mixing of the silicon hydrosol, obtains silicon dioxide gel.
Optionally, silicon source includes tetraethoxysilane, methyltriethoxysilane, dimethyl diethoxysilane, hexichol
Base diethoxy silane, vinyltriethoxysilane, propyl trimethoxy silicane, γ-glycidyl ether propyl trimethoxy
One of base silane, gamma-methyl allyl acyloxypropyl trimethoxysilane, methyltriethoxy silane, hexamethyl siloxane or
A variety of combinations, and silicon source, water and organic solvent are mixed according to arbitrary value between molar ratio 1:5:5-4:10:15.In some realities
It applies in example, silicon source may be selected methyltriethoxysilane (MTEOS), dimethyl diethoxysilane (DDS), ethyl orthosilicate and press
Silicon dioxide gel is prepared according to molar ratio 1:1:1 mixed acid catalyst.In another embodiment, dimethyl diethoxy may be selected
Silane (DDS), hexamethyl siloxane (HMDS), methyltriethoxysilane (MTEOS) are urged according to molar ratio 1:1:1 mixed acid
Change prepares silicon dioxide gel.
Optionally, alcohol ether solvents (can be commonly called as methyl second two for butyl acetate (BEEA), 1,2-PD
Alcohol), the higher boilings alcohol ether solvents such as methyl benzoate (MBZ).Alcohol ether solvents and the acid silicon dioxide hydrosol are in mass ratio
0.5%-10% mixing.
In some embodiments, acidic catalyst is that nitric acid, hydrochloric acid, sulfuric acid are medium, and acidic catalyst adjusts acidity two
The pH of silica hydrogel is the arbitrary value in 1.0-5.0.
Based on the silicon dioxide gel that the above method obtains, using hot nano impression technology in silicon solar cell Window layer
The silica membrane with micro-nano structure can be prepared, so that silicon solar cell can be achieved at the same time antireflective, fall into light
Function effectively promotes the photoelectric conversion efficiency of battery.
In some embodiments, Commercial photovoltaic glass or ultra-clear glasses may be selected in substrate of glass.In further embodiments,
Film is formed in glass surface using silicon dioxide gel, comprising:
Using the methods of in lifting, be coated with or spraying by silicon dioxide gel plated film in glass surface, form film, film layer
Thickness range can be 1~30 μm.
S203. the pattern of Flexible formwork assembly is transferred on the film of glass surface by method for stamping, forms photovoltaic glass.
In some embodiments, the pattern of Flexible formwork assembly is transferred on the film of photovoltaic glass surface by method for stamping
Include: that Flexible formwork assembly is covered on coated photovoltaic glass surface, hot padding processing is carried out to template and photovoltaic glass；Room temperature moves down
Removing template, and by photovoltaic glass in 250-500 DEG C of annealing 0.1-1h, to obtain the photovoltaic glass with micro-nano structure.It is optional
Ground, the pressure of hot padding may be selected 0.08~0.24 bar (bar), and temperature may be selected 60~250 DEG C, and the time of hot padding may be selected
5~60 minutes (min).
It should be noted that the preparation method of above-mentioned photovoltaic glass, not stringent between the corresponding label of each step
Chronological order limitation.Those skilled in the art can convert said sequence and and without departing from the protection model of the application
It encloses.In some implementations, the Flexible formwork assembly for nano impression can be obtained first；Then it executes and forms two in glass basic surface
Silicon oxide film.In other implementations, obtaining can be before obtaining silicon dioxide gel for the Flexible formwork assembly of nano impression
Or carry out later, execution can also be synchronized.In yet other embodiments, for the Flexible formwork assembly of nano impression and in substrate of glass table
Face, which forms silica membrane, can synchronize execution.
According to the another aspect of the application, solar battery group can be prepared using the photovoltaic glass that the application method obtains
Part, comprising: encapsulated the photovoltaic glass with patterning as photovoltaic glass window layer, which is set as solar energy
Battery component front end；Crystal-silicon battery slice, back reflection layer are provided respectively, and the centre of solar cell module is arranged in crystal-silicon battery slice
The rear end of solar cell module, and above-mentioned each portion is arranged in position or the middle layer for being set as solar battery, back reflection layer
/ connected by EVA adhesive.
It should be noted that in this application, " substrate of glass " is referred to as together with having figuratum silica dioxide antireflection film
For " photovoltaic glass window layer ".Optionally, the Window layer of photovoltaic glass may also include CdO transparent conductive film, In2O3It is transparent to lead
Conductive film, SnO2The combination of one of transparent conductive film or ZnO transparent conductive thin film or multiple material, too for film-type
Positive energy battery.Magnetically controlled sputter method, chemical gas can be used in the preparation method for preparing above-mentioned transparent conductive film on the glass substrate
Mutually deposition, electron beam evaporation, pulse laser deposition, sol-gel, spray-wall interaction or successive ionic layer adsorption and reaction method
One of or a variety of combinations.Certainly, it should be noted that the photovoltaic glass of the application can also make directly as anti-reflection film
With.
Embodiment 1
In this embodiment, the preparation method of solar cell module, includes the following steps:
The Flexible formwork assembly of thermoplastic material composition is obtained by secondary transfer printing method.In this embodiment, Flexible formwork assembly
Prepare material selection dimethyl silicone polymer (polydimethylsiloxane, PDMS).Illustratively,
Firstly, dimethyl siloxane (monomer) is uniformly mixed with curing agent 8:1 in mass ratio, preparation liquid PDMS mixing
Solution, optionally, by liquid PDMS mixed solution in be placed under room temperature in vacuum oven can remove mixed solution in
Bubble.In this embodiment, the quality of dimethyl siloxane used is 12g, and the quality of curing agent is 1.5g.It is understood that
, PDMS and curing agent may also be configured to other Reasonable Parameters such as 10:1 or 15:1, the quality of PDMS and curing agent in mass ratio
Than there is no stringent limitations.In this embodiment, curing agent selection such as YLGARD184 silica gel curing agent or KH-570 silane is even
Join agent.Those skilled in the art are attempted by limited times, to the improvement that the application is done, should belong to the model that the application is included
It encloses.
Then, using business making herbs into wool polysilicon chip as initial template, which, which forms, has pyramid
Above-mentioned uniformly mixed PDMS is cast in the surface of original template by structure plan.Optionally, the pyramid knot of polysilicon surface
Structure can be in periodical or aperiodic arrangement.
Then, the original template of above-mentioned surface casting mixing PDMS is put into insulating box to solidify, the temperature in insulating box
Degree is positively retained in 80 DEG C of (degree Celsius) left and right, soaking time about 4h (hour)；Hybrid template is formed after the completion of processing to be solidified
Original template is removed from hybrid template B, obtains cured dimethyl silicone polymer, which is by B
Flexible formwork assembly.Further, using vacuum deposition method, with 1H, 1H, 2H, 2H- n-perfluoro-octyl trichlorosilane is to PDMS template
It is modified, is formed on its surface the unimolecule silicon fluoride adherent layer of one layer of self assembly, which facilitates subsequent coining
The separation of PDMS template and silica membrane.
The application uses PDMS for the target template of material, has lower surface energy compared to conventional rigid template, more
Suitable for the coining processing to silica, the demoulding of subsequent silica easy to accomplish guarantees the completion of pattern；Using this
Intermediate die plate can reduce cost compared with the rigid templates such as existing quartz, silicon wafer.Further, PDMS itself is loose porous,
Convenient for the volatilization of organic solvent in colloidal sol, easy mold release.
Prepare modified hybrid inorganic-organic silica precursor collosol and gel: at room temperature, by methyltriethoxy silane
Alkane, tetraethoxysilane are dissolved in the in the mixed solvent of 20mL ethyl alcohol and water composition according to molar ratio 2:1, and magnetic agitation 3h is used simultaneously
It is 3.0 that concentrated hydrochloric acid, which adjusts mixed solution pH, is aged 48h, obtains the acid silicon dioxide hydrosol, and the acid silicon dioxide hydrosol
The mole percent of middle silica is 5% or so；Then, by butyl acetate and the acid silicon dioxide hydrosol
In mass ratio 5% mixing (i.e. butyl acetate account for Primary silica colloidal sol quality 5% or so), obtains dioxy
SiClx colloidal sol.It should be pointed out that the application prepares micro-nano structure using silica, can overcome existing using titanium oxide sol
Gel prepare micro-nano graphic structure < 1.1 mu m waveband refractive index it is larger, be not easy to realize the defect of ideal antireflective, less than 2 μm
Wave band has better optical transmitance and stability.
Prepare pyramid (micro-nano) structural silica dioxide film: by silicon dioxide gel with 500~1000 revs/min of spin coatings
In glass basic surface, glass size is set as 2.5 × 2.5cm in this embodiment2；Then, by spin-on silicon dioxide colloidal sol
Substrate of glass be placed in warm table surface, warm table surface initial temperature is 30 DEG C, will contain poly dimethyl with patterning
The template of siloxanes covers the glass basic surface for being coated with silicon dioxide gel；Then in the template containing dimethyl silicone polymer
Surface applies the pressure that certain pressure forms about 0.15bar, keeps the pressure constant, heating platen temperature is increased to 120 DEG C simultaneously
It is kept for 30 minutes；Finally, there is the substrate of glass of silicon dioxide gel to be cooled to room temperature spin coating, it will be containing dimethyl silicone polymer
Template is removed with the substrate of glass with film, and the silicon dioxide gel of spin coating will form pyramid knot in such substrate of glass
Structure, the pyramid structure are corresponding with the flannelette of primary template.
Fig. 3 is the silica membrane surface topography map spectrogram that one embodiment of the application is formed in photovoltaic glass surface.
Photovoltaic glass surface has silica membrane, and film thickness is about 20 μm (microns), and the surface of silica membrane has
The pyramid structure of aperiodic random array.Average at 10 μm or so in the film thickness of Pyramid, adjacent pyramid is flat
About 2.3 μm of distance.
Further, using the above-mentioned photovoltaic glass with pyramid structure as a part of Window layer, it is encapsulated in the sun
The front end of energy battery is arranged crystal-silicon battery slice in the lower end of Window layer, and is connected between the two by EVA adhesive；In crystal silicon
Back reflection layer is arranged in the lower end of cell piece, is connected between the two by EVA adhesive, can form solar-electricity as shown in Figure 1
Pond component.The pyramid structure on silica membrane surface makes incident light in surface multiple reflections, reduces reflectivity, simultaneously
The presence of micro-nano structure makes total internal reflection occurrence probability higher, and the light in battery is difficult to escape, thus plays anti-reflection and sunken light
Effect.
Embodiment 2
In glass basic surface spin-on silicon dioxide colloidal sol.Illustratively: (25 DEG C) under room temperature, by dimethyl diethyl
Oxysilane (DDS), hexamethyl siloxane (HMDS), methyltriethoxysilane (MTEOS) are dissolved in 40mL ethyl alcohol according to 1:1:1
With the mixed solvent of water composition, dimethyl diethoxysilane, hexamethyl siloxane, methyltriethoxy silane in practical application
Alkane, deionized water, alcohol solvent according to molar ratio 1:1:1:10:15 mixing (silicon source, deionized water, alcohol solvent mole
Than for 3:10:15), and mixed solution pH=4.0, uniform stirring 1h are adjusted with concentrated nitric acid, reaction generates acid silicon dioxide water
Colloidal sol, the mole percent of silica is 10% in the acid silicon dioxide hydrosol；It is then water-soluble to acid silicon dioxide
Glue ripening 48h；The acid silicon dioxide hydrosol after taking ripening is uniformly mixed with methyl benzoate, methyl benzoate
Ratio be silica hydrosol weight ratio 10% (methyl benzoate account for silica hydrosol quality 10%), formed
Silicon dioxide gel；2.5 × 2.5cm is provided2Sheet glass successively uses deionized water, ethyl alcohol, and acetone solvent cleans up, finally
Using being dried with nitrogen；The silicon dioxide gel of preparation is coated in ultra-clear glasses base surface with 1000 revs/min of rotations, when spin coating
Between be 10s.
Flexible formwork assembly (comprising transfer process twice) is prepared by transfer method three times:
At 90-110 DEG C, 20g liquid methyl methacrylate (monomer PMMA) is taken to be uniformly mixed with 1g polymerization inhibitor, and
Bubble removing is removed in vacuum oven, obtains the mixed solution of homogeneous transparent；With metal form made of copper product for initial template,
The original template surface has micro-convex structure, and mixed solution is cast in initial reticle surface, is put into vacuum oven and solidifies,
Solidifying (softening) temperature is 70 DEG C, curing time 8h；Curing operation completion is placed on forms hybrid template at room temperature, by original mould
Version is removed from hybrid template, obtains cured PMMA, which obtains the pattern of primary template.Further
Ground, with the template containing PMMA for original template as described in example 1 above, and with liquid dimethyl silicone polymer and solidification dosage form
At mixed solution transfer again, obtain Flexible formwork assembly.
It should be noted that in this embodiment, the material for the Flexible formwork assembly that above-mentioned preliminary secondary transfer printing obtains can also be adopted
With epoxy resin, ethylenediamine (EDA), diethylenetriamine (DETA), triethylene tetramine (TETA), four ethylene five are may be selected in curing agent
Amine (TEPA), polyethylene polyamine (PEPA), diethylamine (DEA) etc., i.e., the application does not do the type of thermoplastic material and has
Body limitation.
Further, using vacuum deposition method, Flexible formwork assembly is modified, it is anti-to be formed on its surface one layer of self assembly
Adhesion coating, the adherent layer facilitate the separation of subsequent coining Flexible formwork assembly and silica membrane.
Nano impression processing is carried out using substrate of glass of the Flexible formwork assembly to surface spin-on silicon dioxide sol pellicle.Herein
In embodiment, selects hot padding processing method: the substrate of glass of surface spin-on silicon dioxide colloidal sol being placed in warm table surface, is added
Thermal station surface initial temperature is 30 DEG C, will have figuratum Flexible formwork assembly and covers and is coated with the glass table of silicon dioxide gel film
Face；Then template surface applies the pressure that certain pressure generates about 0.2bar or so, under the situation for keeping pressure constant, will add
Thermal station temperature is increased to 120 DEG C and is kept for 30 minutes, removes soft template and substrate of glass after being finally cooled to room temperature, in titanium dioxide
Silicon face will form the structure with Flexible formwork assembly opposite pattern pattern.
It should be pointed out that the optional ultra-thin glass of the substrate of glass of the application, surface coating glass and iron-content are low
One of ultra-clear glasses etc. or a variety of.In this implementation, substrate of glass selects ultra-clear glasses, and the glass of this type is not only
Light transmittance is high, and high temperature resistant is ageing-resistant under a variety of different weather conditions, meets mark required for solar cell module
It is quasi-.And the pyramid structure silicon dioxide antireflective film of glass basic surface can effectively reduce the reflection at interface between air and glass
Loss improves the utilization rate to solar energy.
By the silica membrane with patterning of preparation, 400 DEG C of high annealings 30 divide in Rapid high temperature annealing furnace
Clock, removes organic matter remained on surface, and further cured film makes film become the silica that pure Si-O-Si bond is closed
Film, and crystal silicon solar energy battery is assembled using method as shown in the Examples.
Further, in this embodiment simple glass, the ultraviolet glue film glass with pyramid structure are also obtained, with
This is to good performance using the application photovoltaic glass obtained as directed.If Fig. 4 is prepared by the embodiment of the present application
The total transmission measurement result schematic diagram of photovoltaic glass.Wherein: abscissa indicates that wavelength X, unit are nm (nanometer), and 250nm≤λ
≤1100nm；Ordinate indicates the transmitance of light, unit %；1. curve corresponds to total transmission measurement result of simple glass；
2. curve corresponds to total transmission measurement result of the ultraviolet glue film glass of pyramid structure；Curve is 3. corresponding to use the application institute
Total transmission measurement result of the silica membrane photovoltaic glass of acquisition.When light passes through completely, transmitance is 100% bent
Line, when translucency is better, transmitance is higher；Conversely, transmitance is lower.It can be seen that from figure, using the application obtained two
Silicon oxide film photovoltaic glass highest transmitance, up to 96.1%, can be tieed up at 356nm wavelength in 350-850nm wave-length coverage
95 or more transmitance is held, and in 350-850nm wave-length coverage, the transmitance of silica membrane photovoltaic glass is higher than common
Glass or ultraviolet glue film glass.
The photovoltaic glass reflectance test result schematic diagram prepared such as Fig. 5 the embodiment of the present application.Wherein: abscissa indicates wave
Long λ, unit nm, and 250nm≤λ≤1100nm；Ordinate indicates the reflectivity to light, unit %；4. curve corresponds to general
The reflectance test result of logical glass；5. curve corresponds to total transmission measurement knot of the ultraviolet glue film glass of pyramid structure
Fruit；6. curve corresponds to the total transmission measurement result for using the application silica membrane photovoltaic glass obtained.It can from figure
Find out, using the application silica membrane photovoltaic glass obtained in 250-1100nm wave-length coverage, silica is thin
The average reflectance of film photovoltaic glass is minimum, and in 250-850nm wave-length coverage, reflectivity maintains 6% or so；Pyramid
For the ultraviolet glue film glass of structure in 250-850nm wave-length coverage, reflectivity maintains 7% or so；The reflection of simple glass
For rate in 250-850nm wave-length coverage, reflectivity maintains 8% or so.Using the silica membrane photovoltaic glass of the application
Be conducive to inhibit the reflection of incident light.
If Fig. 6 is photovoltaic glass mist degree spectral results schematic diagram prepared by the embodiment of the present application.Wherein: abscissa indicates wave
Long λ, unit nm, and 250nm≤λ≤1100nm；Ordinate indicates mist degree, unit %；7. curve corresponds to pyramid structure
Ultraviolet glue film glass total transmission measurement result；Curve is 8. corresponding to use the application silica membrane light obtained
Lie prostrate total transmission measurement result of glass.Use the silica membrane photovoltaic glass average haze of the application reach 80% with
On, be conducive to the scattering of incident light, improve the flux of incident light.
To sum up, this application discloses a kind of silica sol Process for preparing hydrogels of suitable nano impression, and are received using heat
Rice stamping technique has the silicon oxide film of micro-nano structure in the preparation of silicon solar cell Window layer, enables silicon solar cell
Enough while realization falls into light antireflective function, effectively promotes the photoelectric conversion efficiency of battery.Using inventive method in battery Window layer
Surface preparation has the SiO of micro-meter scale2Micro-nano structure film, the wherein SiO of micro-meter scale2Micro-structure is greater than silica-based solar
SPECTRAL REGION (< 1.1 μm) wavelength that battery absorbs, can by multiple reflections, incident effect, realize fall into light, anti-reflection and reduce this
The reflectivity of wave band promotes the solar energy utilization efficiency of battery component.
The merely exemplary principles and effects for illustrating the application of above-described embodiment, not for limitation the application.Additional
Embodiment also falls into the range of claims.In addition, although the application is described for particular implementation, originally
Field technical staff is it should be appreciated that can be changed form and details, without departing from spirit and scope.
Any of the above is incorporated herein by reference interior file and is restricted, so as not to include to run counter to disclosure clear in text
Subject content.
Claims (8)
1. a kind of preparation method of photovoltaic glass, the preparation method include the following steps:
By transfer method, the Flexible formwork assembly of thermoplastic material composition is obtained, the Flexible formwork assembly surface has pattern；
Silicon dioxide gel and substrate of glass are obtained respectively, and are formed in the glass surface using the silicon dioxide gel thin
Film；
The pattern of the Flexible formwork assembly is transferred on the film of the glass surface by thermal marking method, forms photovoltaic glass
Glass；
The silicon dioxide gel obtains by the following method: respectively by silicon source, water and organic solvent acidic catalyst work
With lower mixing, reaction generates the acid silicon dioxide hydrosol；Alcohol ether solvents are mixed with the acid silicon dioxide hydrosol, are obtained
Take silicon dioxide gel；
The alcohol ether solvents are butyl acetate, and the alcohol ether solvents are pressed with the acid silicon dioxide hydrosol
Mass ratio 0.5%-10% mixing.
2. the preparation method of photovoltaic glass according to claim 1, which is characterized in that the film thickness of the glass surface
It is 1-30 μm.
3. the preparation method of photovoltaic glass according to claim 1, which is characterized in that the Flexible formwork assembly is secondary transfer printing
Template, and the secondary transfer printing template obtains as follows:
Liquefied thermoplastic material is uniformly mixed with curing agent, obtains mixed solution A；
Using the surface figuratum rigid template of tool as original template, the mixed solution A described in the original template surface casting；
To the original template row curing process of casting mixed solution A, hybrid template B is obtained；Described in hybrid template B removing
Original template, obtains cured thermoplastic material, and the cured thermoplastic material is secondary transfer printing template.
4. the preparation method of photovoltaic glass according to claim 3, which is characterized in that the original template is silicon wafer, nitrogen
At least one of SiClx, silicon carbide, quartz glass or metal form.
5. the preparation method of photovoltaic glass according to claim 4, which is characterized in that the pattern on the original template surface
Including at least one of pyramid, dimpling shape, honeycombed, and institute's metal patterns are distributed in periodicity or quasi periodic.
6. the preparation method of photovoltaic glass according to claim 1 or 3, which is characterized in that the thermoplastic material is poly-
At least one of methyl methacrylate, polyethylene terephthalate, dimethyl silicone polymer, epoxy resin.
7. the preparation method of photovoltaic glass according to claim 1, which is characterized in that the Flexible formwork assembly passes through at least three
Secondary transfer obtains.
8. the preparation method of photovoltaic glass according to claim 1, which is characterized in that the silicon source includes tetraethoxy-silicane
Alkane, methyltriethoxysilane, dimethyl diethoxysilane, diphenyl diethoxy silane, vinyltriethoxysilane,
Propyl trimethoxy silicane, γ-glycidoxypropyltrimethoxysilane alkane, gamma-methyl allyl acyloxypropyl trimethoxy
At least one of silane, methyltriethoxy silane, hexamethyl siloxane, and the silicon source, water and organic solvent mixing rub
You are than between 1:5:5 and 4:10:15.
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| CN102964067A (en) * | 2012-12-11 | 2013-03-13 | 天津耀皮工程玻璃有限公司 | SiO2 antireflection film for solar photovoltaic glass and preparation method thereof |
| CN104870198A (en) * | 2012-12-21 | 2015-08-26 | 3M创新有限公司 | Patterned structured transfer tape |
| CN105926014A (en) * | 2016-05-05 | 2016-09-07 | 中国科学院上海高等研究院 | Preparation method of large-area highly-ordered porous oxide films based on nano soft embossing |
| CN106414057A (en) * | 2014-01-22 | 2017-02-15 | 3M创新有限公司 | Microoptics for glazing |
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| CN102964067A (en) * | 2012-12-11 | 2013-03-13 | 天津耀皮工程玻璃有限公司 | SiO2 antireflection film for solar photovoltaic glass and preparation method thereof |
| CN104870198A (en) * | 2012-12-21 | 2015-08-26 | 3M创新有限公司 | Patterned structured transfer tape |
| CN106414057A (en) * | 2014-01-22 | 2017-02-15 | 3M创新有限公司 | Microoptics for glazing |
| CN105926014A (en) * | 2016-05-05 | 2016-09-07 | 中国科学院上海高等研究院 | Preparation method of large-area highly-ordered porous oxide films based on nano soft embossing |
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