CN115478327B

CN115478327B - Monocrystalline silicon etching texturing additive, monocrystalline silicon etching texturing liquid containing monocrystalline silicon etching texturing additive, preparation method and application of monocrystalline silicon etching texturing additive

Info

Publication number: CN115478327B
Application number: CN202211161128.7A
Authority: CN
Inventors: 侯军; 吕晶; 任浩楠; 刘海燕; 李思琦; 张洁
Original assignee: Zhejiang Aoshou Material Technology Co ltd
Current assignee: Zhejiang Aoshou Material Technology Co ltd
Priority date: 2022-09-23
Filing date: 2022-09-23
Publication date: 2024-02-27
Anticipated expiration: 2042-09-23
Also published as: CN115478327A

Abstract

The invention provides a monocrystalline silicon etching texturing additive, monocrystalline silicon etching texturing liquid containing the same, and a preparation method and application of the monocrystalline silicon etching texturing additive. The monocrystalline silicon etching texturing additive comprises the following components in parts by weight: 0.003-8 parts of main nucleating agent; 0.005-10 parts of nucleation assisting agent; 0.5-10 parts of foam removing agent; 0.001-0.1 part of surfactant; 3-10 parts of cosolvent; 74-97 parts of ultrapure water. The invention also discloses a texturing solution added with the monocrystalline silicon etching texturing additive. The texture-making liquid can obtain the pyramid morphology which is closely distributed on the surface of the monocrystalline silicon, so that the silicon wafer has good light trapping property and photoelectric conversion efficiency, extremely high texture-making performance and good stability, and has wide industrial application prospect and development potential in the field of monocrystalline silicon treatment.

Description

Monocrystalline silicon etching texturing additive, monocrystalline silicon etching texturing liquid containing monocrystalline silicon etching texturing additive, preparation method and application of monocrystalline silicon etching texturing additive

Technical Field

The invention relates to a monocrystalline silicon etching technology, in particular to a monocrystalline silicon etching and texturing additive, monocrystalline silicon etching and texturing liquid containing the monocrystalline silicon etching and texturing additive, a preparation method and application of the monocrystalline silicon etching and texturing additive.

Background

In the environment background of greenhouse effect and climate warming, it is expected to reduce CO ₂ The emission of gases and the reliance on non-renewable energy sources such as fossil fuels, new energy sources are being increasingly listed as important industrial development directions in various countries. Solar energy is a renewable clean energy source and has the advantages of infinity, universality, cleanliness, economy and the like. In recent years, new energy development represented by photovoltaic power generation in China is effectiveThe energy structure adjustment and the carbon reduction effect are developed gradually. Solar cells are devices that convert solar energy into electrical energy, and through the photovoltaic effect, the cells absorb photons, creating electrons or hole minority carriers, which drive electrodes that diffuse to the cell surface through drift of a built-in electric field at the p-n junction and concentration differences, leading out the formation current from the electrodes.

Monocrystalline silicon solar cells are dominant in photovoltaic large-scale applications and industrial production by virtue of their high conversion efficiency. In the single crystal silicon battery manufacturing process, the texturing is the most basic and important process. The texturing is also called surface texturing, and is a process for forming random regular pyramid structure textured surfaces on the surface of monocrystalline silicon by utilizing the anisotropic etching characteristic of alkali liquor on the surfaces (100) and (111). Under the illumination condition, the pyramid can realize secondary or repeated reflection of sunlight, so that the light absorption and the number of photogenerated carriers on the surface are effectively increased, and further the photoelectric conversion efficiency is improved.

CN112144122a discloses a texturing additive suitable for large-size monocrystalline silicon wafers, the additive comprising: 0.5 to 10 percent of main nucleating agent, 0.2 to 5 percent of supplementary nucleating agent, 0.01 to 0.1 percent of branched dispersing agent, 0.05 to 0.5 percent of deaerating agent and the balance of water. The hydrolyzed polyacrylonitrile sodium salt is used as a main nucleating agent, and the polyamino acid is used as a supplementary nucleating agent, so that the problem of non-uniformity in the large-size silicon wafer after texturing is solved; the texture-making reflectivity is low and the texture-making time is short.

CN112226819a discloses a texturing additive suitable for thin monocrystalline silicon wafers, which consists of the following components in percentage by mass: 0.5 to 5.0 percent of suede nucleating agent, 0.02 to 0.5 percent of suede corrosion inhibitor, 0.001 to 0.01 percent of suede size regulator and the balance of deionized water. The water-soluble polymers such as sodium carboxymethyl cellulose and the like are used as nucleating agents, so that the problem of fragmentation caused by stress warping after the thin monocrystalline silicon wafer is textured is solved; the short-circuit current of the manufactured battery piece is stable and has small fluctuation.

CN114351257a discloses an additive for rapid texturing of HIT solar cells and a texturing process, which comprises a nucleating agent, a surfactant, an accelerator, a defoaming agent, an organic acid and the balance of deionized water. The chitosan derivative is used as a nucleating agent, and the accelerator is added, so that the reaction rate is accelerated, and the production capacity of the HIT solar cell is further improved.

The nucleating agent widely used in the current formula is a water-soluble polymer substance, but has the problems of short effective time, low texturing efficiency, low photoelectric conversion efficiency and the like.

Disclosure of Invention

Aiming at the problems of short effective time, low texturing efficiency and low photoelectric conversion efficiency of the traditional monocrystalline silicon texturing additive, the invention provides the monocrystalline silicon etching texturing additive, and the texturing solution added with the monocrystalline silicon etching texturing additive can obtain a pyramid shape which is closely distributed on the surface of monocrystalline silicon, so that the silicon wafer has good light trapping property and photoelectric conversion efficiency, extremely high texturing performance and good stability, and has wide industrial application prospect and development potential in the monocrystalline silicon processing field.

In order to achieve the above purpose, the invention adopts the following technical scheme: the monocrystalline silicon etching texturing additive comprises the following components in parts by weight:

further, the primary nucleating agent is an alkoxy-containing silane in which Si is linked to three alkoxy groups.

Further, the main nucleating agent is any one or more of Si-to-three methoxy-linked silanes, si-to-three ethoxy-linked silanes or Si-to-three isopropoxy-linked silanes.

Further, the primary nucleating agent is preferably Si silane with three ethoxy groups attached.

Further, the main nucleating agent is any one or more of 3-aminopropyl methyl dimethoxy silane, trimethoxy silane, 1, 2-bis trimethoxy silicon-based ethane, triethoxy silane, 3-chloropropyl triethoxy silane, 3-aminopropyl triethoxy silane, triisopropoxy silane, methyl triisopropoxy silane and chloromethyl triisopropoxy silane.

Further, the main nucleating agent is preferably any one or more of trimethoxysilane, 1, 2-bis trimethoxysilylethane, triethoxysilane, triisopropoxysilane, methyltrisopropoxysilane and chloromethyltriisopropoxysilane.

Further, the primary nucleating agent is most preferably triethoxysilane and/or 1, 2-bis (triethoxysilyl) ethane.

Further, the weight ratio of the triethoxysilane to the 1, 2-bis (triethoxysilyl) ethane is 10:1-2:1.

Further, the weight ratio of triethoxysilane to 1, 2-bis (triethoxysilyl) ethane is preferably 7:1 to 3:1.

Further, the weight ratio of triethoxysilane to 1, 2-bis (triethoxysilyl) ethane is most preferably 4:1.

Further, the main nucleating agent is 1-5 parts.

The invention introduces alkoxy-containing silane as main nucleating agent, and the alkoxy of the material is broken under alkaline texturing condition to generate active silicon-oxygen groups and corresponding alcohol. The silicon oxide group has high activity, is easy to form hydrogen bonds on the surface of the silicon wafer, promotes the exertion of nucleation, and the alcohol substances also have the effect of bubble removal, and promotes the desorption and discharge of hydrogen products.

Further, the nucleation assisting agent is gas phase Al ₂ O ₃ And/or gas phase SiO ₂ 。

Further, the nucleation agent is preferably gas phase SiO ₂ 。

Further, the auxiliary nucleating agent is 0.2-1.5 parts.

The gas-phase oxide is introduced as the nucleation assisting agent for the first time, the surface energy is high, the hydrophilicity is strong, the energy required for hydrogen bonding with Si is low, and the masking effect can be cooperatively exerted with the main nucleation agent.

Further, the foam removing agent is a small molecule containing trifluoromethyl.

Further, the foam removing agent is any one or more of benzotrifluoride, para-methyltrifluorotoluene, ortho-methyltrifluorotoluene and 3-methyltrifluorotoluene.

Further, the foam removing agent is preferably benzotrifluoride.

Further, the foam removing agent is 2-5 parts.

The bubble removing agent structure selected by the invention contains trifluoromethyl, phenyl or tolyl, the strong polarity trifluoromethyl tends to form hydrogen bond with Si-OH, thus being enriched on the surface of a silicon wafer, the weak polarity phenyl or tolyl points to hydrogen bubbles, and H is generated under the synergistic effect of two groups ₂ Can be discharged in time.

Further, the surfactant is a fluorine-containing surfactant.

Further, the surfactant is any one or more of potassium perfluorobutyl sulfonate, potassium perfluorohexyl sulfonate, potassium perfluorooctyl sulfonate, ammonium perfluorohexanoate, ammonium perfluorooctanoate, ammonium perfluorooctyl sulfonate and sodium perfluorononenoxybenzenesulfonate.

Further, the surfactant is preferably potassium perfluorobutyl sulfonate and/or potassium perfluorohexyl sulfonate.

Further, the surfactant is 0.005-0.05 part.

F has the characteristic of strong electronegativity, so that F tends to form hydrogen bonds on the surface of the silicon wafer, and therefore, the F can be attracted to the vicinity of the silicon wafer, and the exertion of the surface activity function is promoted from the space position; the advantage of the stable structure of the fluorine surface is that the fluorine surface can keep high decontamination performance in a velvet making environment.

Further, the cosolvent is ethylene glycol and/or glycerol.

Further, the cosolvent is 5-8 parts.

The nucleating agent in the monocrystalline silicon etching texturing additive has low molecular polarity and poor solubility in water, and the cosolvent is introduced into the system to improve the solubility of the nucleating agent in order to ensure that all components are uniformly dispersed and have consistent concentration in the additive.

Further, the ultrapure water is 80-90 parts.

The invention also discloses a preparation method of the monocrystalline silicon etching texturing additive, which comprises the following steps:

step 1: weighing the components according to the weight ratio;

step 2: placing the main nucleating agent, the foam removing agent, the surfactant and the cosolvent into a container, adding 1/4-1/2 of the ultrapure water, and stirring until all materials are completely dissolved;

step 3: adding the rest ultrapure water into the nucleation aiding agent and uniformly dispersing by a high-speed dispersing machine;

step 4: and (3) adding the auxiliary nucleating agent solution obtained by the dispersion in the step (3) into the mixed solution in the step (2), and further uniformly mixing to obtain the wool making additive.

Further, the dispersing condition in the step 3 is that a high-speed dispersing machine disperses the nucleation assisting agent solution for 3-10min at 3000-5000 rpm.

Further, the stirring dispersion condition in step 3 is preferably a high-speed disperser to disperse the nucleation aid solution at 4000rpm for 5min.

Further, when the auxiliary nucleating agent and the ultrapure water are added in the step 3, the auxiliary nucleating agent and the ultrapure water can be excessively added in proportion, so that the loss of raw materials caused by high-speed dispersion of the counter-flushing is ensured, and the auxiliary nucleating agent with one dosage can be obtained.

The invention also discloses application of the monocrystalline silicon etching and texturing additive in the monocrystalline silicon etching and texturing field.

The invention also discloses a monocrystalline silicon etching texturing solution which comprises the monocrystalline silicon etching texturing additive and an alkali solution.

Further, the alkali solution is an aqueous solution of alkali, and the alkali in the alkali solution is NaOH and/or KOH.

Further, the alkali solution has a concentration of 1 to 3wt%.

Further, the alkali solution concentration is preferably 1.5 to 2wt%.

Further, the mass ratio of the monocrystalline silicon wet etching texturing additive to the alkali solution is 0.2-2:100.

Further, the mass ratio of the monocrystalline silicon wet etching texturing additive to the alkali solution is preferably 0.3-1:100.

The invention also discloses a preparation method of the monocrystalline silicon etching and texturing solution, which comprises the following steps: adding the monocrystalline silicon etching texturing additive into the alkali solution, and uniformly stirring to obtain the monocrystalline silicon etching texturing solution.

The invention also discloses application of the monocrystalline silicon etching texturing solution in the texturing field, and the monocrystalline silicon etching texturing solution can obtain pyramid morphology which is closely distributed on the surface of monocrystalline silicon, so that the silicon wafer has good light trapping property and photoelectric conversion efficiency.

The monocrystalline silicon etching and texturing steps are as follows: immersing the monocrystalline silicon wafer into monocrystalline silicon wet etching texturing liquid for surface texturing, wherein the texturing temperature is 75-85 ℃, the texturing time is 360-540s, and after the monocrystalline silicon wafer is taken out, washing with pure water and drying.

Further, the texturing temperature is 78-82 ℃, preferably 82 ℃.

Further, the texturing time is 400-480s, preferably 420s.

Further, the pure water is rinsed for 2-6min, preferably 5min, and dried at 95℃for 6-10min, preferably 10min.

The working principle of the invention is to promote the anisotropic etching of alkali liquor to the surface of monocrystalline silicon and the desorption of products, and clean dirt on the silicon wafer. Alkoxy-containing silane is introduced as a main nucleating agent and nano oxide particles are introduced as auxiliary nucleating agents, and the nano oxide particles and the main nucleating agent promote suede formation through the cooperation of hydrogen bonds and Van der Waals forces of the nano oxide particles and the silicon wafer surface. The alkoxy in the silane can be broken when meeting alkali, and a silicon oxygen active group and alcohol are generated. The Si-O polar bond in the active silicon group tends to form a hydrogen bond with Si-OH on the surface of the silicon wafer, and the reactivity of the silicon atom is reduced by means of space blocking and active site protection, so that the silicon atom becomes a nucleation point of pyramid suede. Meanwhile, the alcohol generated after the alkoxy is broken can play a role in eliminating bubbles, so that on one hand, the surface tension of the solution can be reduced, and on the other hand, partial hydrogen products can be taken away when methanol, ethanol and isopropanol with low boiling point volatilize. Both texturing actions make alkoxy-containing silanes good nucleating agents with a dual function. The nucleation assisting agent is a gas-phase oxide, si-OH or Al-OH bonds rich in the surface of the oxide endow the silicon wafer with high reactivity and good hydrophilicity, and hydrogen bonds can be formed on the surface of the silicon wafer in a flocking environment, so that the anisotropic etching factor is improved. The gas-phase oxide has the advantages of simple structure and small molecular volume, and low energy required by the gas-phase oxide when the gas-phase oxide reacts with Si to realize directional arrangement, so that the gas-phase oxide can be used as a nucleation assisting agent to cooperatively play a masking role with a main nucleation agent. It should be noted that the gas phase oxides have high surface energy, are very easy to agglomerate, require attention to the limitation of the addition amount during application and must be properly dispersed.

The foam removing agent introduced by the invention contains trifluoromethyl and phenyl or tolyl, and F atoms with strong electronegativity tend to generate hydrogen bond action with Si-OH groups on the surface of the silicon wafer, so that the directional arrangement of the foam removing agent molecules is realized. While the lipophilic phenyl or tolyl in the foam removing agent structure points to H attached to the surface of the flake ₂ The bubbles and the two groups promote the dissolution and desorption of hydrogen and prevent the bubble dipping phenomenon, thereby avoiding the uneven problem of the floating sheet and the suede. The fluorine-containing substance is selected because F is the element with the strongest electronegativity, and even if a large amount of nucleating agents are distributed on the surface of the silicon wafer, the oriented arrangement can be realized through the hydrogen bond action so as to play a foam discharging function. To increase the solubility of the foam removing agent in water, ethylene glycol and glycerol are selected as co-solvents.

The surfactant is also fluorine-containing substances, and the tendency of F to form hydrogen bonds with Si-OH enables the surfactant to be enriched near the silicon wafer, so that the surfactant has excellent cleaning capability on attachments and dirt on the surface of the silicon wafer. The perfluoro surface activity has the characteristics of high ionization energy and large C-F bond energy, so the perfluoro surface activity has the advantages of stable structure and strong dispersibility, and can keep high decontamination performance under alkaline texturing conditions.

Compared with the prior art, the monocrystalline silicon etching and texturing additive and the monocrystalline silicon etching and texturing liquid containing the same have the following advantages:

1. the invention introduces alkoxy-containing silane as main nucleating agent, and the alkoxy of the material is broken under alkaline texturing condition to generate active silicon-oxygen groups and corresponding alcohol. The silicon oxide group has high activity, is easy to form hydrogen bonds on the surface of a silicon wafer so as to promote the performance of nucleation, and the alcohol substances also have the effect of bubble removal so as to promote the desorption and discharge of hydrogen products.

2. The gas-phase oxide is introduced as the nucleation assisting agent for the first time, the surface energy is high, the hydrophilicity is strong, the energy required for hydrogen bonding with Si-OH is low, and the masking effect can be cooperatively exerted with the main nucleation agent.

3. The bubble removing agent structure selected by the invention contains trifluoromethyl and phenyl or tolyl, the strong polarity trifluoromethyl tends to form hydrogen bond with Si-OH, so that the strong polarity trifluoromethyl is enriched on the surface of a silicon wafer, the weak polarity phenyl or tolyl points to hydrogen bubbles, and H is generated under the synergistic effect of two groups ₂ Can be discharged in time.

4. F has the characteristic of strong electronegativity, and is easy to form hydrogen bonds on the surface of the silicon wafer, so that the F can be attracted to the vicinity of the silicon wafer, and the exertion of the surface activity function is promoted from the perspective of space adsorption; the advantage of stable structure of the fluorosurfactant allows it to maintain high detergency in a pile environment.

Therefore, the wool making additive has high wool making performance and good stability, and has wide industrial application prospect and development potential in the field of monocrystalline silicon treatment.

Drawings

FIG. 1 is a photograph of a metallographic microscope taken by pitching down a textured surface of a monocrystalline silicon wafer obtained by texturing using a texturing solution containing example 1, at a magnification of 1000 times.

Fig. 2 is a photograph of a metallographic microscope taken by pitching a textured surface of a monocrystalline silicon wafer textured with a textured liquid containing the texture-forming liquid of example 1 under a bright field, at a magnification of 1000 times.

Fig. 3 is a metallographic microscope photograph showing a texture of a monocrystalline silicon piece obtained by texturing using a texturing solution containing comparative example 1, taken in a dark field at a magnification of 1000 times.

Fig. 4 is a metallographic microscope photograph showing a texture of a monocrystalline silicon piece obtained by texturing using a texturing solution containing comparative example 1, taken in a downward direction in a bright field, at a magnification of 1000.

FIG. 5 is a scanning electron microscope image of a textured surface of a monocrystalline silicon piece textured with a texturing solution containing example 1, at 5000 times magnification.

Detailed Description

The invention is further illustrated by the following examples:

example 1

Examples 1-14 disclose various monocrystalline silicon etching texturing additives whose components and parts by mass are shown in table 1.

The preparation method of the monocrystalline silicon etching texturing additive in the embodiments 1-14 comprises the following steps:

weighing the components according to the description of the table 1, adding all the components except the nucleation aid and 1/2 ultrapure water into a container, and stirring until all the materials are completely dissolved to obtain a solution 1; dispersing the nucleation aiding agent and the rest 1/2 ultrapure water for 5min at 4000rpm by a high-speed dispersing machine to obtain a solution 2, adding the solution 2 into the solution 1, and uniformly mixing to obtain the monocrystalline silicon etching and texturing additive.

Table 1 examples 1-14 monocrystalline silicon etching texturing additive composition and parts by mass

Comparative examples 1 to 5

Comparative examples 1-5 the components and parts by mass of the texturing additives are shown in table 2 and the preparation method is the same as in example 1.

TABLE 2 Components and parts by weight of comparative examples 1-5 texturing additives

Performance testing

In order to compare the effect of the texturing additive provided by the invention on the battery efficiency, the texturing solution containing the examples 1-14 and the texturing solution of the comparative examples 1-5 are used for texturing, and 1000 single wafers are selected for battery efficiency test. The preparation method of the texturing solution containing the monocrystalline silicon etching texturing additive in the embodiments 1-14 comprises the following steps: the monocrystalline silicon etching texturing additive containing examples 1-14 was added to an alkali solution which was an aqueous solution of 1wt% naoh, and the mass ratio of the monocrystalline silicon etching texturing additive to the alkali solution was 0.7:100. The preparation method of the texturing solution containing the texturing additives of comparative examples 1 to 5 is the same as above.

The steps of the wool making by adopting the wool making liquid are as follows: and (3) keeping the temperature of the texturing solution at 75-85 ℃, immersing the monocrystalline silicon wafer into the texturing solution for 360-540s, taking out the silicon wafer, flushing the silicon wafer with pure water for 5min, and drying the silicon wafer at 95 ℃ for 10min.

The results of the electrical performance test of the texturing solution are shown in table 3: it can be seen that the silicon wafer cell performance of the texturing using the texturing solution containing the monocrystalline silicon etching texturing additive of examples 1 to 14 was significantly superior to that of comparative examples 1 to 5, and the cell parameters of the examples were higher than those of comparative examples in terms of open circuit voltage (Voc), short circuit current (Isc), parallel circuit (Rsh), fill Factor (FF) and efficiency (Eta), and the series resistance (Rs) of the examples was smaller than that of the comparative examples, indicating that the examples can obtain more excellent cell efficiency than the comparative examples.

Table 3 results of electrical performance testing of the texturing solution containing the additives of examples 1-14 and comparative examples 1-5

Voc and Isc are the maximum voltage and current values that can be achieved by a solar cell. When the external circuit of the solar cell is open, the effective maximum voltage of the solar cell, namely the open-circuit voltage Voc, can be obtained. When the output voltage of the solar cell is 0, namely the external circuit is short-circuited, the current flowing through the solar cell is short-circuit current Isc. In the open state, the net current through the solar cell is 0. The fill factor FF represents the ratio of power to Voc x Isc at the maximum power point. A high open circuit voltage can result in a high fill factor. The solar cell conversion efficiency Eta is an amount representing how much electric energy the irradiation energy is converted into per unit area. The higher the conversion efficiency, the more electrical energy can be generated per unit irradiation intensity per unit area. The size of which is closely related to Voc, isc, FF. Rs is the series resistance of the solar cell and mainly consists of four parts, namely the bulk resistance of a substrate material, the contact resistance between metal and the substrate, the transverse resistance of a diffusion layer and the resistance of a metal electrode, and the rising of Rs can consume the power of the solar cell and reduce the filling factor and the conversion efficiency. Rsh is a parallel resistor of the solar cell, and is mainly related to the quality of crystalline silicon materials and defects and impurities introduced in the manufacturing process of the solar cell, and the parallel resistor can reduce photo-generated current to generate reverse shunt, reduce working voltage and seriously affect FF.

The results of the silicon wafer morphology detection after texturing are shown in figures 1-5.

As can be seen from fig. 1, the surface of the silicon wafer obtained by texturing in example 1 is uniformly covered by textured surfaces with uniform sizes; the bright field image of fig. 2 further proves that the texturing solution containing embodiment 1 can form a tightly-formed pyramid textured surface on the surface of the silicon wafer, and the surface morphology can effectively improve the light receiving area and the incident light utilization rate of the silicon wafer, and increase the number of photo-generated carriers, so that the photoelectric conversion efficiency is improved. The scanning electron microscope image shown in fig. 5 clearly shows that the texture of example 1 gives a uniform and ordered surface pyramid morphology.

Comparing the pile sizes of fig. 3 and fig. 1, the pile size of the silicon wafer obtained by the pile making of comparative example 1 is larger than that of example 1, which indicates that the pyramid of comparative example 1 is sparse; as can be seen from the bright field picture of fig. 4, there are many white areas on the wafer surface where the pyramids are not etched, and these areas are still smooth planes of the wafer, indicating that the pyramid texture obtained in example 1 cannot completely cover the surface, and cannot form a light trapping structure that effectively reduces optical loss.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.

Claims

1. The monocrystalline silicon etching texturing additive is characterized by comprising the following components in parts by weight:

0.003-8 parts of main nucleating agent;

0.005-10 parts of nucleation assisting agent;

0.5-10 parts of foam removing agent;

0.001-0.1 part of surfactant;

3-10 parts of cosolvent;

74-97 parts of ultrapure water;

the main nucleating agent is silane containing alkoxy, wherein Si is connected with three alkoxy groups;

the nucleation promoter is gas phase Al ₂ O ₃ And/or gas phase SiO ₂ ；

The foam removing agent is a small molecule containing trifluoromethyl;

the surfactant is a fluorine-containing surfactant.

2. The monocrystalline silicon etching texturing additive according to claim 1, wherein the cosolvent is ethylene glycol and/or glycerol.

3. A method of preparing the monocrystalline silicon etching texturing additive of claim 1 or 2, comprising the steps of:

step 1: weighing the components according to the weight ratio;

4. A monocrystalline silicon etching texturing solution comprising the monocrystalline silicon etching texturing additive and an alkali solution according to claim 1.

5. A method for preparing the monocrystalline silicon etching texturing solution according to claim 4, comprising the following steps: adding the monocrystalline silicon etching texturing additive into the alkali solution, and uniformly stirring to obtain the monocrystalline silicon etching texturing solution.

6. An application of the monocrystalline silicon etching texturing solution according to claim 4 in the texturing field, which is characterized in that: immersing the monocrystalline silicon wafer into monocrystalline silicon wet etching texturing liquid for surface texturing, wherein the texturing temperature is 75-85 ℃, the texturing time is 360-540 and s, taking out the monocrystalline silicon wafer, and washing and drying the monocrystalline silicon wafer by pure water.