CN111139531A - Texturing additive for monocrystalline silicon wafer and application thereof - Google Patents
Texturing additive for monocrystalline silicon wafer and application thereof Download PDFInfo
- Publication number
- CN111139531A CN111139531A CN202010191090.2A CN202010191090A CN111139531A CN 111139531 A CN111139531 A CN 111139531A CN 202010191090 A CN202010191090 A CN 202010191090A CN 111139531 A CN111139531 A CN 111139531A
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- Prior art keywords
- texturing
- additive
- silicon wafer
- solution
- gum
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a texturing additive for monocrystalline silicon wafers, which comprises the following components in percentage by mass: 0.2 to 4 percent of water-soluble polymer, 0.15 to 0.5 percent of sodium humate, 1 to 2 percent of potassium sorbate, 1.5 to 3.5 percent of sodium acetate and the balance of water. The addition of the additive of the invention into the texturing solution of the monocrystalline silicon piece can shorten the texturing time and obtain a low-reflectivity texturing piece.
Description
Technical Field
The invention relates to the field of photovoltaics, in particular to a texturing additive for monocrystalline silicon wafers and application thereof.
Background
The texturing is an important link in the production process flow of the solar cell, a pyramid-like tetrahedral structure is formed on the surface of the silicon wafer through the texturing process, and the textured structure can enable incident light to be reflected and refracted on the surface of the silicon wafer for multiple times, so that the reflectivity of the surface of the silicon wafer is reduced, and the photoelectric conversion efficiency is improved. The reflectivity of a texturing sheet under the existing single-crystal texturing process is 11-12%, and the texturing time generally needs 600-900 s.
With the continuous increase of the single crystal share in the market of the crystalline silicon solar cell in recent years, the requirement of the energy production of the single crystal silicon slice in unit time is higher and higher. In order to improve the productivity, it is necessary to reduce the texturing time as much as possible, but if the texturing time is simply shortened, it is likely that the texturing effect is greatly reduced, and the reflectivity of the texturing sheet is increased, and the increased reflectivity lowers the photoelectric conversion efficiency of the cell sheet.
The object of the present invention is to shorten the texturing time and to obtain a low-reflectance texturing sheet.
Disclosure of Invention
The invention aims to provide a texturing additive for a monocrystalline silicon wafer and application thereof.
In order to achieve the aim, the invention provides a texturing additive for a monocrystalline silicon wafer, which comprises the following components in percentage by mass: 0.2 to 4 percent of water-soluble polymer, 0.15 to 0.5 percent of sodium humate, 1 to 2 percent of potassium sorbate, 1.5 to 3.5 percent of sodium acetate and the balance of water.
Preferably, the water-soluble polymer is a natural water-soluble polymer.
Preferably, the natural water-soluble polymer is selected from one or more of vegetable gum, animal gum and seaweed gum.
Preferably, the vegetable gum is selected from one or more of abelmoschus manihot gum, locust bean gum, soybean gum and guar gum.
Preferably, the animal glue is selected from one or two of bone glue and gelatin.
Preferably, the seaweed gel is selected from one or two of algin and sodium alginate.
The invention also provides a texturing solution for the monocrystalline silicon wafer, which contains an alkali solution and the texturing additive, wherein the mass ratio of the texturing additive to the alkali solution is 0.5-1.5: 100, and the alkali solution is an inorganic alkali aqueous solution.
Preferably, the alkali solution is 1.0-3.0 wt% of sodium hydroxide or potassium hydroxide aqueous solution.
The invention also provides a texturing method of the monocrystalline silicon wafer, which is used for texturing the surface of the monocrystalline silicon wafer by using the texturing liquid.
The texture surface making method of the monocrystalline silicon wafer comprises the following specific steps:
1) preparing a texturing additive: adding 0.2-4% of water-soluble polymer, 0.15-0.5% of sodium humate, 1-2% of potassium sorbate and 1.5-3.5% of sodium acetate into the balance of water by mass percent, and uniformly mixing to prepare a texturing additive;
2) preparing a texturing solution: adding the texturing additive prepared in the step 1) into an alkaline solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the texturing additive to the aqueous alkali is 0.5-1.5: 100; the alkali solution is an inorganic alkali aqueous solution;
3) immersing a monocrystalline silicon wafer into the texturing solution prepared in the step 2) for surface texturing, wherein the texturing temperature is 75-85 ℃, and the texturing time is 270-360 s; the reflectivity of the obtained flocking sheet is 10.0-11.0%.
The invention has the advantages and beneficial effects that: the additive is added into the texturing solution of the monocrystalline silicon wafer, so that the texturing time can be shortened, and a texturing sheet with low reflectivity can be obtained.
When the additive is used for texturing, the texturing time can be reduced to 270s, and the capacity of the texturing sheet can be greatly improved.
The size of the texture pyramid obtained by texturing is controllable, the texture pyramid distribution is narrow, the reflectivity of the texturing sheet to light can be as low as 10.0%, and the photoelectric conversion efficiency of the solar cell sheet obtained by assembly is high.
The invention can prepare the texturing sheet with the reflectivity of 10.2 percent in the texturing time of 300 s.
The texturing additive disclosed by the invention is prepared from environment-friendly raw materials, is non-toxic and non-corrosive, and is harmless to human bodies and the environment.
The additive for making the wool has the advantages of low cost, high efficiency, obvious effect and excellent practical value.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The invention provides a texturing method of a monocrystalline silicon wafer, which comprises the following specific steps:
1) preparing a texturing additive: adding 0.2-4 wt% of natural water-soluble polymer, 0.15-0.5 wt% of sodium humate, 1-2 wt% of potassium sorbate and 1.5-3.5 wt% of sodium acetate into the balance of water, and mixing uniformly to prepare a texturing additive;
the natural water-soluble polymer is selected from one or more of vegetable gum, animal gum and seaweed gum;
the vegetable gum is selected from one or more of Abelmoschus manihot gum, locust bean gum, soybean gum and guar gum;
the animal glue is selected from one or two of bone glue and gelatin;
the seaweed gel is one or two of algin and sodium alginate;
2) preparing a texturing solution: adding the texturing additive prepared in the step 1) into an alkaline solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the texturing additive to the aqueous alkali is 0.5-1.5: 100; the alkali solution is 1.0-3.0 wt% of sodium hydroxide or potassium hydroxide aqueous solution;
3) immersing a monocrystalline silicon wafer into the texturing solution prepared in the step 2) for surface texturing, wherein the texturing temperature is 75-85 ℃, and the texturing time is 270-360 s; the reflectivity of the obtained flocking sheet is 10.0-11.0%.
More specific examples of the invention are as follows:
the invention can prepare the texturing sheet with the reflectivity of 10.2 percent in the texturing time of 300s, and the specific steps comprise:
1) preparing a texturing additive: adding 2% of abelmoschus manihot gum, 0.2% of gelatin, 0.2% of algin, 0.2% of sodium humate, 1.2% of potassium sorbate and 2% of sodium acetate into the balance of water by mass percent, and mixing uniformly to prepare a texturing additive;
2) preparing a texturing solution: adding the texturing additive prepared in the step 1) into an alkaline solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the texturing additive to the alkali solution is 0.6: 100; the alkali solution is 1.5wt% sodium hydroxide aqueous solution;
3) immersing a monocrystalline silicon wafer into the texturing solution prepared in the step 2) for surface texturing, wherein the texturing temperature is 80 ℃, and the texturing time is 300 s; the reflectivity of the resulting texturing sheet was 10.2%.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. The texturing additive for the monocrystalline silicon wafer is characterized by comprising the following components in percentage by mass: 0.2 to 4 percent of water-soluble polymer, 0.15 to 0.5 percent of sodium humate, 1 to 2 percent of potassium sorbate, 1.5 to 3.5 percent of sodium acetate and the balance of water.
2. The additive for texturing a single-crystal silicon wafer according to claim 1, wherein the water-soluble polymer is a natural water-soluble polymer.
3. The additive for texturing a monocrystalline silicon wafer according to claim 2, wherein the natural water-soluble polymer is selected from one or more of vegetable gum, animal gum and seaweed gum.
4. The additive for texturing a monocrystalline silicon wafer according to claim 3, wherein the vegetable gum is one or more selected from the group consisting of abelmoschus manihot gum, locust bean gum, soybean gum and guar gum.
5. The additive for texturing a single-crystal silicon wafer according to claim 3, wherein the animal glue is one or two selected from bone glue and gelatin.
6. The additive for texturing a monocrystalline silicon wafer according to claim 3, wherein the alginate gel is one or two selected from algin and sodium alginate.
7. The texturing solution for the monocrystalline silicon wafer is characterized by comprising an alkali solution and the texturing additive according to any one of claims 1 to 6, wherein the mass ratio of the texturing additive to the alkali solution is 0.5-1.5: 100, and the alkali solution is an inorganic alkali aqueous solution.
8. The texturing solution for a single-crystal silicon wafer according to claim 7, wherein the alkali solution is a 1.0 to 3.0wt% aqueous solution of sodium hydroxide or potassium hydroxide.
9. A method for texturing a single crystal silicon wafer, characterized in that the texturing solution according to claim 7 or 8 is used to texture the surface of the single crystal silicon wafer.
10. The method for texturing a single crystal silicon wafer according to claim 9, comprising the steps of:
1) preparing a texturing additive: adding 0.2-4% of water-soluble polymer, 0.15-0.5% of sodium humate, 1-2% of potassium sorbate and 1.5-3.5% of sodium acetate into the balance of water by mass percent, and uniformly mixing to prepare a texturing additive;
2) preparing a texturing solution: adding the texturing additive prepared in the step 1) into an alkaline solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the texturing additive to the aqueous alkali is 0.5-1.5: 100; the alkali solution is an inorganic alkali aqueous solution;
3) immersing the monocrystalline silicon wafer into the texturing solution prepared in the step 2) for surface texturing, wherein the texturing temperature is 75-85 ℃, and the texturing time is 270-360 s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202010191090.2A CN111139531A (en) | 2020-03-18 | 2020-03-18 | Texturing additive for monocrystalline silicon wafer and application thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010191090.2A CN111139531A (en) | 2020-03-18 | 2020-03-18 | Texturing additive for monocrystalline silicon wafer and application thereof |
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| CN111139531A true CN111139531A (en) | 2020-05-12 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111663186A (en) * | 2020-06-30 | 2020-09-15 | 常州时创能源股份有限公司 | Additive for texturing of diamond wire cut monocrystalline silicon wafer and application thereof |
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| CN103451739A (en) * | 2013-09-04 | 2013-12-18 | 常州时创能源科技有限公司 | Monocrystalline silicon wafer texturizing additive and using method thereof |
| CN103774239A (en) * | 2013-11-13 | 2014-05-07 | 河南科技学院 | Cleaning and wool making technology for monocrystal silicon chip |
| CN107459417A (en) * | 2017-06-15 | 2017-12-12 | 江苏大学 | A kind of method for preparing liquid silicon fertilizer using monocrystaline silicon solar cell making herbs into wool waste liquid |
| CN109326660A (en) * | 2018-09-16 | 2019-02-12 | 苏州润阳光伏科技有限公司 | Solar cell monocrystalline silicon substrate flannelette generates technique |
| CN110396725A (en) * | 2019-07-10 | 2019-11-01 | 天津爱旭太阳能科技有限公司 | A kind of flocking additive and its application of monocrystalline silicon piece |
| CN110644055A (en) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | Monocrystalline silicon texturing additive formula containing polysaccharide and alcohols |
| CN110846721A (en) * | 2019-10-12 | 2020-02-28 | 湖南理工学院 | Monocrystalline silicon texturing additive formula containing polyalcohol and PEG |
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2020
- 2020-03-18 CN CN202010191090.2A patent/CN111139531A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103451739A (en) * | 2013-09-04 | 2013-12-18 | 常州时创能源科技有限公司 | Monocrystalline silicon wafer texturizing additive and using method thereof |
| CN103774239A (en) * | 2013-11-13 | 2014-05-07 | 河南科技学院 | Cleaning and wool making technology for monocrystal silicon chip |
| CN107459417A (en) * | 2017-06-15 | 2017-12-12 | 江苏大学 | A kind of method for preparing liquid silicon fertilizer using monocrystaline silicon solar cell making herbs into wool waste liquid |
| CN109326660A (en) * | 2018-09-16 | 2019-02-12 | 苏州润阳光伏科技有限公司 | Solar cell monocrystalline silicon substrate flannelette generates technique |
| CN110396725A (en) * | 2019-07-10 | 2019-11-01 | 天津爱旭太阳能科技有限公司 | A kind of flocking additive and its application of monocrystalline silicon piece |
| CN110644055A (en) * | 2019-10-12 | 2020-01-03 | 湖南理工学院 | Monocrystalline silicon texturing additive formula containing polysaccharide and alcohols |
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Non-Patent Citations (1)
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111663186A (en) * | 2020-06-30 | 2020-09-15 | 常州时创能源股份有限公司 | Additive for texturing of diamond wire cut monocrystalline silicon wafer and application thereof |
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Application publication date: 20200512 |
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