SG11201405526UA - Mask blank, transfer mask, and method for manufacturing mask blank and transfer mask - Google Patents

Mask blank, transfer mask, and method for manufacturing mask blank and transfer mask

Info

Publication number
SG11201405526UA
SG11201405526UA SG11201405526UA SG11201405526UA SG11201405526UA SG 11201405526U A SG11201405526U A SG 11201405526UA SG 11201405526U A SG11201405526U A SG 11201405526UA SG 11201405526U A SG11201405526U A SG 11201405526UA SG 11201405526U A SG11201405526U A SG 11201405526UA
Authority
SG
Singapore
Prior art keywords
mask
transfer
blank
manufacturing
mask blank
Prior art date
Application number
SG11201405526UA
Other languages
English (en)
Inventor
Toshiyuki Suzuki
Shigenori Ishihara
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201405526UA publication Critical patent/SG11201405526UA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11201405526UA 2012-03-23 2013-02-08 Mask blank, transfer mask, and method for manufacturing mask blank and transfer mask SG11201405526UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012066742 2012-03-23
PCT/JP2013/053053 WO2013140887A1 (ja) 2012-03-23 2013-02-08 マスクブランク、転写用マスクおよびこれらの製造方法

Publications (1)

Publication Number Publication Date
SG11201405526UA true SG11201405526UA (en) 2014-11-27

Family

ID=49222352

Family Applications (3)

Application Number Title Priority Date Filing Date
SG11201405526UA SG11201405526UA (en) 2012-03-23 2013-02-08 Mask blank, transfer mask, and method for manufacturing mask blank and transfer mask
SG10201509797RA SG10201509797RA (en) 2012-03-23 2013-02-08 Mask blank, transfer mask, and methods of manufacturing the same
SG10201605431QA SG10201605431QA (en) 2012-03-23 2013-02-08 Mask blank, transfer mask, and methods of manufacturing the same

Family Applications After (2)

Application Number Title Priority Date Filing Date
SG10201509797RA SG10201509797RA (en) 2012-03-23 2013-02-08 Mask blank, transfer mask, and methods of manufacturing the same
SG10201605431QA SG10201605431QA (en) 2012-03-23 2013-02-08 Mask blank, transfer mask, and methods of manufacturing the same

Country Status (6)

Country Link
US (2) US9470970B2 (enrdf_load_stackoverflow)
JP (3) JP5286455B1 (enrdf_load_stackoverflow)
KR (3) KR101922309B1 (enrdf_load_stackoverflow)
SG (3) SG11201405526UA (enrdf_load_stackoverflow)
TW (2) TWI585515B (enrdf_load_stackoverflow)
WO (1) WO2013140887A1 (enrdf_load_stackoverflow)

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JP6266322B2 (ja) * 2013-11-22 2018-01-24 Hoya株式会社 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク及びその製造方法、並びに表示装置の製造方法
JP6138676B2 (ja) * 2013-12-27 2017-05-31 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
JP6292581B2 (ja) * 2014-03-30 2018-03-14 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体装置の製造方法
JP6313678B2 (ja) * 2014-07-14 2018-04-18 Hoya株式会社 マスクブランクの製造方法、位相シフトマスクの製造方法および半導体デバイスの製造方法
JP6104852B2 (ja) * 2014-07-14 2017-03-29 Hoya株式会社 マスクブランクの製造方法、位相シフトマスクの製造方法および半導体デバイスの製造方法
US10018905B2 (en) * 2015-04-06 2018-07-10 S & S Tech Co., Ltd Phase shift blankmask and photomask
KR101617727B1 (ko) 2015-07-24 2016-05-03 주식회사 에스앤에스텍 블랭크 마스크 및 이를 이용한 포토마스크
JP6621626B2 (ja) * 2015-09-18 2019-12-18 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6742184B2 (ja) * 2016-07-26 2020-08-19 アルバック成膜株式会社 位相シフタ膜の製造方法、位相シフトマスクブランクの製造方法、及び、位相シフトマスクの製造方法
JP6677139B2 (ja) * 2016-09-28 2020-04-08 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランクの製造方法
JP6772037B2 (ja) * 2016-11-11 2020-10-21 Hoya株式会社 マスクブランク、転写用マスク、転写用マスクの製造方法および半導体デバイスの製造方法
JP6532919B2 (ja) * 2017-09-07 2019-06-19 Hoya株式会社 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク、及び表示装置の製造方法
US20200285144A1 (en) * 2017-09-21 2020-09-10 Hoya Corporation Mask blank, transfer mask, and method for manufacturing semiconductor device
SG11202005137VA (en) * 2017-12-26 2020-07-29 Hoya Corp Mask blank, phase shift mask, and method of manufacturing semiconductor device
CN110184655B (zh) * 2019-04-25 2022-01-11 上海新傲科技股份有限公司 晶圆的表面氧化方法
KR102444967B1 (ko) * 2021-04-29 2022-09-16 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102465982B1 (ko) * 2021-07-13 2022-11-09 에스케이씨솔믹스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
KR102503790B1 (ko) * 2021-10-07 2023-02-23 에스케이엔펄스 주식회사 블랭크 마스크 및 이를 이용한 포토마스크
JP7346527B2 (ja) * 2021-11-25 2023-09-19 Hoya株式会社 マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法
TWI796907B (zh) * 2021-12-28 2023-03-21 宏碁股份有限公司 光固化設備以及顯示裝置的製造方法

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JPH0917712A (ja) * 1995-06-28 1997-01-17 Toppan Printing Co Ltd X線露光用マスクブランクのx線透過支持膜形成方法
JPH0980736A (ja) * 1995-09-18 1997-03-28 Toshiba Corp 露光用マスク及びその製造方法
JP3396431B2 (ja) 1998-08-10 2003-04-14 東京エレクトロン株式会社 酸化処理方法および酸化処理装置
AU4291099A (en) * 1998-09-30 2000-04-17 Nikon Corporation Photomask and exposure method
JP2004318184A (ja) * 2000-09-12 2004-11-11 Hoya Corp 位相シフトマスクブランク、位相シフトマスク
JP2002090978A (ja) 2000-09-12 2002-03-27 Hoya Corp 位相シフトマスクブランクの製造方法、及び位相シフトマスクブランクの製造装置
JP3608654B2 (ja) 2000-09-12 2005-01-12 Hoya株式会社 位相シフトマスクブランク、位相シフトマスク
JP3722029B2 (ja) 2000-09-12 2005-11-30 Hoya株式会社 位相シフトマスクブランクの製造方法、及び位相シフトマスクの製造方法
DE10307545A1 (de) 2002-02-22 2003-11-06 Hoya Corp Zuschnitt für halbtonartige Phasenverschiebungsmaske und zugehörige Phasenverschiebungsmaske
JP3641460B2 (ja) * 2002-02-22 2005-04-20 Hoya株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP4076989B2 (ja) 2004-10-15 2008-04-16 Hoya株式会社 位相シフトマスクブランクス及び位相シフトマスク
JP4930964B2 (ja) 2005-05-20 2012-05-16 Hoya株式会社 位相シフトマスクブランクの製造方法及び位相シフトマスクの製造方法
KR100818676B1 (ko) * 2006-01-20 2008-04-01 주식회사 에스앤에스텍 하프톤형 위상반전 블랭크 마스크용 스퍼터링 타겟, 이를이용한 하프톤형 위상반전 블랭크 마스크 및 포토마스크,그리고 그 제조방법
KR20070096922A (ko) * 2006-03-24 2007-10-02 주식회사 에스앤에스텍 하프톤형 위상반전 블랭크 마스크 및 이를 이용한 포토마스크
JP5702920B2 (ja) * 2008-06-25 2015-04-15 Hoya株式会社 位相シフトマスクブランク、位相シフトマスクおよび位相シフトマスクブランクの製造方法
KR101656456B1 (ko) * 2009-10-30 2016-09-12 삼성전자주식회사 하프톤형 위상반전 블랭크 포토마스크와 하프톤형 위상반전 포토마스크 및 그의 제조방법
KR102071721B1 (ko) * 2010-04-09 2020-01-30 호야 가부시키가이샤 위상 시프트 마스크 블랭크 및 그 제조 방법, 및 위상 시프트 마스크
US8535855B2 (en) * 2010-05-19 2013-09-17 Hoya Corporation Mask blank manufacturing method, transfer mask manufacturing method, mask blank, and transfer mask
JP4974194B2 (ja) * 2010-06-21 2012-07-11 Hoya株式会社 フォトマスクブランクの製造方法
WO2013172248A1 (ja) 2012-05-16 2013-11-21 Hoya株式会社 マスクブランク、転写用マスクおよびこれらの製造方法

Also Published As

Publication number Publication date
JP5976715B2 (ja) 2016-08-24
KR101430395B1 (ko) 2014-08-13
KR20160009711A (ko) 2016-01-26
JP5530550B2 (ja) 2014-06-25
JP2013225139A (ja) 2013-10-31
KR20140127203A (ko) 2014-11-03
JP2013225109A (ja) 2013-10-31
JP5286455B1 (ja) 2013-09-11
KR101922309B1 (ko) 2018-11-26
US20170010526A1 (en) 2017-01-12
WO2013140887A1 (ja) 2013-09-26
US9470970B2 (en) 2016-10-18
SG10201509797RA (en) 2015-12-30
TW201346434A (zh) 2013-11-16
US20150072273A1 (en) 2015-03-12
KR101588150B1 (ko) 2016-01-25
TW201642021A (zh) 2016-12-01
US9952498B2 (en) 2018-04-24
SG10201605431QA (en) 2016-08-30
TWI610125B (zh) 2018-01-01
KR20140070660A (ko) 2014-06-10
JP2014194547A (ja) 2014-10-09
TWI585515B (zh) 2017-06-01

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