SG10201509797RA - Mask blank, transfer mask, and methods of manufacturing the same - Google Patents

Mask blank, transfer mask, and methods of manufacturing the same

Info

Publication number
SG10201509797RA
SG10201509797RA SG10201509797RA SG10201509797RA SG10201509797RA SG 10201509797R A SG10201509797R A SG 10201509797RA SG 10201509797R A SG10201509797R A SG 10201509797RA SG 10201509797R A SG10201509797R A SG 10201509797RA SG 10201509797R A SG10201509797R A SG 10201509797RA
Authority
SG
Singapore
Prior art keywords
mask
manufacturing
methods
same
transfer
Prior art date
Application number
SG10201509797RA
Inventor
Toshiyuki Suzuki
Shigenori Ishihara
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG10201509797RA publication Critical patent/SG10201509797RA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG10201509797RA 2012-03-23 2013-02-08 Mask blank, transfer mask, and methods of manufacturing the same SG10201509797RA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012066742 2012-03-23

Publications (1)

Publication Number Publication Date
SG10201509797RA true SG10201509797RA (en) 2015-12-30

Family

ID=49222352

Family Applications (3)

Application Number Title Priority Date Filing Date
SG11201405526UA SG11201405526UA (en) 2012-03-23 2013-02-08 Mask blank, transfer mask, and method for manufacturing mask blank and transfer mask
SG10201605431QA SG10201605431QA (en) 2012-03-23 2013-02-08 Mask blank, transfer mask, and methods of manufacturing the same
SG10201509797RA SG10201509797RA (en) 2012-03-23 2013-02-08 Mask blank, transfer mask, and methods of manufacturing the same

Family Applications Before (2)

Application Number Title Priority Date Filing Date
SG11201405526UA SG11201405526UA (en) 2012-03-23 2013-02-08 Mask blank, transfer mask, and method for manufacturing mask blank and transfer mask
SG10201605431QA SG10201605431QA (en) 2012-03-23 2013-02-08 Mask blank, transfer mask, and methods of manufacturing the same

Country Status (6)

Country Link
US (2) US9470970B2 (en)
JP (3) JP5286455B1 (en)
KR (3) KR101430395B1 (en)
SG (3) SG11201405526UA (en)
TW (2) TWI610125B (en)
WO (1) WO2013140887A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6266322B2 (en) * 2013-11-22 2018-01-24 Hoya株式会社 Phase shift mask blank for manufacturing display device, phase shift mask for manufacturing display device, method for manufacturing the same, and method for manufacturing display device
JP6138676B2 (en) * 2013-12-27 2017-05-31 Hoya株式会社 Phase shift mask blank, method for manufacturing the same, and method for manufacturing the phase shift mask
JP6292581B2 (en) * 2014-03-30 2018-03-14 Hoya株式会社 Mask blank, transfer mask manufacturing method, and semiconductor device manufacturing method
JP6104852B2 (en) * 2014-07-14 2017-03-29 Hoya株式会社 Mask blank manufacturing method, phase shift mask manufacturing method, and semiconductor device manufacturing method
JP6313678B2 (en) * 2014-07-14 2018-04-18 Hoya株式会社 Mask blank manufacturing method, phase shift mask manufacturing method, and semiconductor device manufacturing method
US10018905B2 (en) * 2015-04-06 2018-07-10 S & S Tech Co., Ltd Phase shift blankmask and photomask
KR101617727B1 (en) 2015-07-24 2016-05-03 주식회사 에스앤에스텍 Blankmask and Photomask using the same
JP6621626B2 (en) * 2015-09-18 2019-12-18 Hoya株式会社 Mask blank, phase shift mask, and semiconductor device manufacturing method
JP6742184B2 (en) * 2016-07-26 2020-08-19 アルバック成膜株式会社 Method of manufacturing phase shifter film, method of manufacturing phase shift mask blank, and method of manufacturing phase shift mask
JP6677139B2 (en) * 2016-09-28 2020-04-08 信越化学工業株式会社 Manufacturing method of halftone phase shift type photomask blank
JP6772037B2 (en) * 2016-11-11 2020-10-21 Hoya株式会社 Mask blank, transfer mask, transfer mask manufacturing method and semiconductor device manufacturing method
JP6532919B2 (en) * 2017-09-07 2019-06-19 Hoya株式会社 Phase shift mask blank for manufacturing display device, phase shift mask for manufacturing display device, and method of manufacturing display device
SG11202002544SA (en) * 2017-09-21 2020-04-29 Hoya Corp Mask blank, transfer mask, and method for manufacturing semiconductor device
SG11202005137VA (en) * 2017-12-26 2020-07-29 Hoya Corp Mask blank, phase shift mask, and method of manufacturing semiconductor device
CN110184655B (en) * 2019-04-25 2022-01-11 上海新傲科技股份有限公司 Surface oxidation method of wafer
KR102444967B1 (en) * 2021-04-29 2022-09-16 에스케이씨솔믹스 주식회사 Blank mask and photomask using the same
KR102465982B1 (en) * 2021-07-13 2022-11-09 에스케이씨솔믹스 주식회사 Blank mask and photomask using the same
KR102503790B1 (en) * 2021-10-07 2023-02-23 에스케이엔펄스 주식회사 Blank mask and photomask using the same
TWI796907B (en) * 2021-12-28 2023-03-21 宏碁股份有限公司 Light curing apparatus and method for manufacturing display device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0917712A (en) * 1995-06-28 1997-01-17 Toppan Printing Co Ltd Method for forming x-ray transmission support film of mask blank for x-ray exposure
JPH0980736A (en) * 1995-09-18 1997-03-28 Toshiba Corp Mask for exposure and its production
JP3396431B2 (en) 1998-08-10 2003-04-14 東京エレクトロン株式会社 Oxidation treatment method and oxidation treatment device
AU4291099A (en) * 1998-09-30 2000-04-17 Nikon Corporation Photomask and exposure method
JP2002090978A (en) 2000-09-12 2002-03-27 Hoya Corp Method of manufacturing phase shift mask blank and apparatus for manufacturing phase shift mask blank
JP3608654B2 (en) 2000-09-12 2005-01-12 Hoya株式会社 Phase shift mask blank, phase shift mask
JP2004318184A (en) * 2000-09-12 2004-11-11 Hoya Corp Phase shift mask blank and phase shift mask
JP3722029B2 (en) 2000-09-12 2005-11-30 Hoya株式会社 Phase shift mask blank manufacturing method and phase shift mask manufacturing method
JP3641460B2 (en) * 2002-02-22 2005-04-20 Hoya株式会社 Halftone phase shift mask blank and halftone phase shift mask
DE10307545A1 (en) 2002-02-22 2003-11-06 Hoya Corp Crop for halftone phase shift mask and associated phase shift mask
JP4076989B2 (en) 2004-10-15 2008-04-16 Hoya株式会社 Phase shift mask blanks and phase shift masks
JP4930964B2 (en) 2005-05-20 2012-05-16 Hoya株式会社 Method for manufacturing phase shift mask blank and method for manufacturing phase shift mask
KR100818676B1 (en) * 2006-01-20 2008-04-01 주식회사 에스앤에스텍 Sputtering target for half-tone phase shift blankmask, half-tone phase shift blankmask and photomask and manufacturing method thereof
KR20070096922A (en) * 2006-03-24 2007-10-02 주식회사 에스앤에스텍 Half-tone phase shift blankmask and photomask using the same
JP5702920B2 (en) 2008-06-25 2015-04-15 Hoya株式会社 Phase shift mask blank, phase shift mask, and method of manufacturing phase shift mask blank
KR101656456B1 (en) * 2009-10-30 2016-09-12 삼성전자주식회사 Half-tone phase shift photomask blank and half-tone phase shift photomask and methods of fabricating the same
US8999609B2 (en) * 2010-04-09 2015-04-07 Hoya Corporation Phase shift mask blank, method of manufacturing the same, and phase shift mask
US8535855B2 (en) * 2010-05-19 2013-09-17 Hoya Corporation Mask blank manufacturing method, transfer mask manufacturing method, mask blank, and transfer mask
JP4974194B2 (en) * 2010-06-21 2012-07-11 Hoya株式会社 Photomask blank manufacturing method
SG11201406324PA (en) 2012-05-16 2014-11-27 Hoya Corp Mask blank, transfer mask, and methods of manufacturing the same

Also Published As

Publication number Publication date
TW201346434A (en) 2013-11-16
JP5286455B1 (en) 2013-09-11
KR20140070660A (en) 2014-06-10
JP5530550B2 (en) 2014-06-25
SG11201405526UA (en) 2014-11-27
WO2013140887A1 (en) 2013-09-26
JP2013225139A (en) 2013-10-31
KR101588150B1 (en) 2016-01-25
KR101922309B1 (en) 2018-11-26
KR20160009711A (en) 2016-01-26
JP2014194547A (en) 2014-10-09
KR101430395B1 (en) 2014-08-13
KR20140127203A (en) 2014-11-03
US20170010526A1 (en) 2017-01-12
JP2013225109A (en) 2013-10-31
SG10201605431QA (en) 2016-08-30
TWI610125B (en) 2018-01-01
JP5976715B2 (en) 2016-08-24
US20150072273A1 (en) 2015-03-12
TW201642021A (en) 2016-12-01
US9470970B2 (en) 2016-10-18
US9952498B2 (en) 2018-04-24
TWI585515B (en) 2017-06-01

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